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News Subsites

LEDs Markets Micro Opto PV Suppliers

1 June 2026

Wolfspeed launches data-center solutions team in Silicon Valley

Ganesh Srinivasan hired as senior VP to lead team, joined by Yogesh Ramadass as VP, Power Systems Solutions & Fellow

1 June 2026

BluGlass executes $1m option shortfall agreement, plus potential extra $500,000

Funds to support new and existing GaN laser contracts and working capital

31 May 2026

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month

29 May 2026

Infineon joins NVIDIA’s MGX AI Factory ecosystem

Infineon supporting complete 800VDC power conversion flow down to intermediate bus voltage and core voltage

29 May 2026

Infineon introduces first silicon carbide power module operating at 205°C

Higher output power from existing EV inverter designs, or reduced system complexity and overall cost in new designs

29 May 2026

IQE’s full-year 2025 revenue falls 17.6%, as 40% drop in wireless outweighs 15% growth in photonics

Improved second-half 2025 business carrying into 2026

28 May 2026

Purdue and Taiwan’s GCCS partner to scale silicon carbide substrates to 8- and 12-inches

Joint initiative targets thermal, power and 6G bottlenecks in AI infrastructure, while securing US supply chain

28 May 2026

RFMW to distribution RFHIC’s GaN RF and microwave solutions worldwide

Vertically integrated GaN portfolio spans discrete devices to complete RF subsystems, enabling scalable high-power solutions

28 May 2026

IQE completes £81m fundraising

MACOM’s chief operating officer Robert Dennehy and vice president David O’Carroll to become non-executive directors

22 May 2026

Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D

Three-year project to develop UWBG semiconductors for high-power/high-frequency electronics and optoelectronics

22 May 2026

Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints

High-power half-bridge baseplate and scalable full-bridge baseplate-less modules target AI data centers and energy infrastructure

22 May 2026

Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers

QDPAK top-side-cooled package supports high power density and low power loss in 800V HVDC architectures

Honeywell On-demand Webcast

News Features

21 May 2026

Sidewall gating of GaN HEMTs

Structure gives highest enhancement-mode threshold of +4V.

21 May 2026

Nanopillar GaN LED arrays for VR and AR

Researchers fabricate 6336PPI devices with view to future near-eye applications

14 May 2026

Red InGaN micro-LEDs with narrow FWHM and high EQE

Researchers use photonic crystal structure to achieve 5nm linewidth and 12% efficiency.

17 April 2026

Silicon aluminium nitride on GaN MISHEMTs for 6G and X-band

Fujitsu device achieves 74.3% power-added efficiency and 10.4W/mm P_out.

17 April 2026

Nano-ridge surface-emitting lasers on 300mm silicon

First demonstration uses one-dimensional photonic crystal concept.

26 March 2026

Single- and multi-channel AlScN barriers

GaN channel heterostructures achieve a record 45Ω/□ sheet resistance.

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Feature Downloads

1 June 2026

Monolithic bidirectional diamond switch
Researchers achieve an on-resistance of 8.2mΩ-cm² and a breakdown voltage of 290V for devices based on two-dimensional hole gas structures.

1 June 2026

Smartphone shipments grow 1% year-on-year in Q1/2026 to 298.5 million units
…but correction expected in Q2 and second-half 2026, says omdia.

1 June 2026

Taking heat off AlGaNchannel HEMTs
Researchers report record thermal performance.

1 June 2026

Sidewall gating of GaN HEMTs
Structure gives highest enhancement-mode threshold of +4V.

1 June 2026

Tunnel-junction micro-LEDs with 45% wall-plug efficiency
Researchers avoid post-growth thermal p-GaN activation.

1 June 2026

Nanopillar GaN LED arrays for VR and AR
Researchers fabricate 6336PPI devices with a view to future near-eye applications.

1 May 2026

Micro-LED transfer via electrochemical etch
UCSB researchers transfer arrays of devices down to 3μm onto silicon.

1 May 2026

Nano-ridge surface-emitting lasers on 300mm silicon
First demonstration uses one-dimensional photonic crystal concept.

Features Archive >