2 September 2024
Fraunhofer IAF uses MOCVD to fabricate aluminum yttrium nitride
Alternative to magnetron sputtering of AlYN opens up commercial applications of AlYN/GaN heterostructures.
2 September 2024
Gallium nitride HEMTs on 8-inch sapphire
Researchers seek to reduce production costs for devices with blocking voltages beyond 1200V.
2 September 2024
Etching-free pixel definition for InGaN micro-LEDs
Selective thermal oxidation proposed as viable alternative to plasma etch.
2 September 2024
Red InGaN micro-LED on silicon prospecting
Pioneers reach ultra-high 4232PPI resolution.
2 September 2024
Near size-independent UV-A micro-LED performance
Researchers claim record for on-wafer EQE from sub-10μm device.
2 September 2024
Comparison between MBE and MOCVD technologies
Richard Hogg, III-V Epi chief technology officer and professor of Photonics at Aston Institute of Photonics Technology (AIPT), and Dr Neil Gerrard, III-V Epi director of epitaxy, explore the III-V semiconductor synthesis applications that each epitaxial growth technology best suits.
5 July 2024
InP-on-insulator substrates for 2.1μm lasers on silicon
Ion-slicing technique could enable lower-cost production of optoelectronics.
5 July 2024
PCSEL emits at more than 300mW CW at 1550nm wavelength
Potential applications include communications and eye-safe LiDAR.