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Honeywell
1 September 2025

Nagoya University produces gallium oxide pn diodes with double current-handling capacity

New method uses standard industrial processes to achieve higher voltage, increased stability, and energy efficiency

1 September 2025

University of Wisconsin-Madison opens Ultra-Wide Bandgap Semiconductor MOCVD Lab

Lab to be cornerstone UW-Madison’s focus on III–nitrides

29 August 2025

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, see latest issue.

28 August 2025
E-mode GaN HEMT breakdown beyond 10kV
Optimized RESURF structure enables improved breakdown voltage–on-resistance trade-off.
28 August 2025

SweGaN, Ericsson, Saab and Chalmers collaborate on 6G GaN power amplifier project

Vinnova-funded GaN6G+ to develop high-efficiency GaN-based PAs for 6G

27 August 2025

Korea’s Supreme Court upholds ruling on Everlight stealing Seoul Semi’s LED technology

Lower court convicted Everlight of bribing former Seoul Semi staff

27 August 2025

Xscape and Tower unveil first optically pumped on-chip multi-wavelength laser platform for AI data-center fabrics

Monolithically integrated programmable laser on Tower’s PH18 platform enables scalable CWDM/DWDM optical fabrics for disaggregated AI clusters

27 August 2025

OpenLight raises $34m in Series A funding round to scale integrated photonics for AI data centers

Firm to expand PDK library and ramp up standard-based reference PICs at 1.6Tb/s and 3.2Tb/s

26 August 2025

Toshiba and SICC sign MOU on silicon carbide power semi wafer collaboration

SICC to improve wafer quality and reliability for SiC power semi manufacturers

26 August 2025

Skyworks names Phil Carter as CFO

Former corporate controller & principal accounting officer rejoins from AMD

26 August 2025

Navitas names Chris Allexandre as president & CEO and board member

Veteran of Renesas, IDT, NXP, Fairchild and TI succeeds Gene Sheridan

25 August 2025

Plessey Semiconductors acquired by Haylo Labs

Over £100m to be invested over next five years to scale manufacturing capacity

Bruker
CS Clean
Vistec
News Features
21 August 2025
Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors
20 August 2025
D-band GaN power HEMTs on silicon
Researchers report highest-frequency device performance so far.
12 August 2025
1200V fully vertical GaN-on-silicon MOSFETs
Fluorine-ion implant termination enables high breakdown.
7 August 2025
N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.
24 July 2025
Gallium oxide HFET combines polytypes
First ε-/α-Ga2O3 transistor achieves promising breakdown and on-resistance performance.
17 July 2025
ScAlN ferroelectric AlGaN HEMT opportunities
Potential for future reconfigurable multi-function, memory, and high-temperature applications.
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Feature Downloads
1 September 2025

Gallium oxide HFET combines polytypes
First ε-/α-Ga2O3 transistor achieves promising breakdown and on-resistance performance.

1 September 2025

Improving mobility in InAs quantum wells on GaAs substrate
Surface smoothing to reduce step bunching could enable less expensive, superior alternative for quantum information and other applications.

1 September 2025

ScAlN ferroelectric AlGaN HEMT opportunities
Potential for future reconfigurable multi-function, memory, and high-temperature applications.

1 September 2025

N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.

1 September 2025

Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift in wavelength constrained to 6.2nm between 1mA and 100mA injection current.

28 July 2025

Mass production QF-HVPE of GaN-on-GaN system
Researchers claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.

28 July 2025

Monolithic HEMT– micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.

28 July 2025

Tracking down sources of efficiency droop
Researchers at UIUC have modified the ABC model to extract the impacts of Auger–Meitner recombination, charge polarization, and junction temperature.

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