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Honeywell
20 May 2025

Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package

Four new devices boost efficiency and power density of industrial equipment

20 May 2025

CEA-Leti reports co-integration of GaN micro-LEDs and organic photodetectors for multi-functional display applications

Presentation at Display Week paves way toward displays that show content and sense the environment

19 May 2025

Viper RF joins WIN Alliance Program

Partnership to provide WIN foundry customers with custom design services, including 1–150GHz MMICs

19 May 2025

Nexperia reports resilient annual performance and positive outlook amid market headwinds

Firm grows market share and increases R&D spending

19 May 2025

POET grows non-recurring engineering revenue in Q1

Product launches at OFC and transition of production from SPX to Malaysian partner Globetronics to boost revenue in second-half 2025

19 May 2025

Gelest opens new production plant

Focus on precursor chemicals for dry resist EUV lithography

16 May 2025

Tawazun Council, RTX and EGA sign MOU to explore gallium production in Abu Dhabi

Initiative would create gallium extraction and refining capabilities at EGA’s alumina refinery

16 May 2025

Sivers renews debt financing with US-headquartered bank to support growth strategy

Firm issuing 3,318,029 five-year warrants to lender at subscription price of SEK4.53 per share

15 May 2025

SPRINTER project gains €6m from EU to develop new networks for ultra-connected smart factories

Hybrid photonic/wireless transceivers to power ultra-fast, energy-efficient industrial internet

15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
15 May 2025

Innoscience wins ruling from China’s Supreme Court after appeal by Infineon

Patent lawsuits to remain jurisdiction of Suzhou Court rather than Wuxi Court

15 May 2025

Space Forge raises £22.6m in Series A funding to accelerate development of ForgeStar-2 and launch of ForgeStar-1

NATO Innovation Fund-led round includes backing from World Fund, NSSIF and British Business Bank

Bruker
CS Clean
Vistec
News Features
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
17 April 2025
RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in 32-bit device.
10 April 2025
GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces Si and C contamination on free-standing substrate surface and in channel layer.
3 April 2025
Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO delivers low on-resistance and high breakdown voltages.
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Feature Downloads
29 April 2025

Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Mg-implanted guard ring reduces electric field concentration at gate electrode, boosting breakdown voltage from 1.6kV to 5.15kV

29 April 2025

Imec identifies stable operating range for GaN MISHEMTs in RF power amplifiers
Findings support GaN-Si’s potential for high-reliability 5G+/6G communication systems.

29 April 2025

AlScN-barrier GaN HEMT with record high on-current
Epitaxial high-k insulator enhancement enables 4A/mm on-current density.

29 April 2025

AlN template strategies for brighter UVC LEDs
Up to 90% efficiency boost from nanolayer modification, growth-mode modulation, and indium-doping methods

29 April 2025

Full-color monolithic micro-LED displays
Pixels combine RGB sub-pixels via stacking and selective material etch and regrowth.

29 April 2025

Reducing energy costs for AI and data processing
Chinese–German research has reduced SM-VCSEL energy per bit to 168fJ at 60Gbits/s.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

31 March 2025

Gallium arsenide nano-ridge laser diodes on 300mm silicon
Researchers achieve record-low 6x104/cm2 misfit defect density.

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