Honeywell
20 August 2026

Micross acquiring AEMtec, expanding reach into Europe

Acquisition broadens advanced packaging, optoelectronics and test capabilities

20 August 2026

GaN epilayers grown on TekSiC’s semi-insulating silicon carbide wafers

Key milestones toward Europe’s first domestic commercially available semi-insulating SiC wafer supply

19 August 2026

HexSeed raises over £600,000 in early-stage funding

Funding to be used to demonstrate diamond coating process on commercial GaN power devices and support engagement with pilot customers

19 August 2026

Clas-SiC gains £1.9m Scottish Enterprise Capital Grant as part of £12m investment

Funding to enable upgrade of technology and equipment, and training for production staff and apprentices

19 August 2026

Lumentum’s quarterly revenue more than doubles year-on-year to over $1bn

September-quarter revenue guidance raised by $250m, reaching target model a quarter early

18 August 2026

Ascent Solar broadens thin-film space PV testing beyond NASA’s low Earth orbit results

Interest increases in solutions spanning multiple orbital environments

18 August 2026

Coherent sampling 300mm high-thermal-conductivity silicon carbide

Substrates target thermal management requirements of AI and HPC systems

17 August 2026

NoMIS demos 6.5kV large-die SiC MOSFET

Progress made on high-voltage roadmap to 10kV SiC MOSFETs and 20kV SiC IGBTs

17 August 2026

Space Forge selects Texas A&M University System as manufacturing base

Agreement sets framework for firm’s first US facility for semiconductor materials manufacturing and processing

17 August 2026

SweGaN raises $14m in Series B financing to accelerate global growth

Funding to boost production capacity and development of GaN-on-SiC materials

17 August 2026

xEV power chip market to more than double to $14.5bn by 2031

SiC displacing silicon in powertrain as batteries move from 400V to 800/1000V

13 August 2026
Electrochemical GaN HEMT exfoliation

Silicon substrate release method results in less than 2nm roughness of etched surfaces.

Bruker
CS Clean
Vistec
Honeywell On-demand Webcast
News Features
7 August 2026
GaN HEMT short-circuit performance

Device achieves record 629μs withstanding time.

7 August 2026
Reducing micro-LED sidewall impact

Neutral reactive N/H treatment increases EQE in 5μm GaN device by 34%.

6 August 2026
More thermally stable indium phosphide quantum dot near-infrared laser diodes
Researchers achieve a high T0 of 125K at 780nm.
6 August 2026
Taking heat off AlGaN-channel HEMTs
Researchers report record thermal performance
5 August 2026
First continuous-wave UV VCSEL operation at room temperature
Device benefits from reduced optical losses and improved thermal dissipation.
5 August 2026
Gate-all-around InGaN nano-LED
Structure enables electrical modulation of sidewall recombination and transistor operation.
Feature Downloads
20 July 2026

From road to rack: 800V EV innovations redefining AI data-center power architecture
The power electronics market for data centers will grow 2.5-fold by 2036, forecasts IDTechEx.

20 July 2026

Silicon carbide technology patent activity remained strong in Q1, says KnowMade
New patent publications in Q1/2026 exceed 460 for SiC power devices & modules and 320 for substrates & epiwafers.

20 July 2026

E-mode gallium nitride quantum well in aluminium nitride XHEMTs
The structure could also enable a combination of n-channel with p-channel HFETs for CMOS-type circuit designs.

20 July 2026

Increasing passivated AlGaN power
Researchers report a 1.7x enhancement in the Baliga figure-of-merit for a passivated AlGaN MISHEMT transistor on sapphire substrate.

20 July 2026

Purifying red InGaN micro-LED spectra
Researchers have reduced compositional pulling to achieve a single, symmetric peak in emission from red indium gallium nitride multi-quantum well micro-LEDs.

20 July 2026

Monolithic all-GaN 2T1C-μLED–photodetector integration
Researchers at Shandong University look forward to next-generation portable and wearable intelligent terminals.

1 June 2026

Tunnel-junction micro-LEDs with 45% wall-plug efficiency
Researchers avoid post-growth thermal p-GaN activation.

1 June 2026

Nanopillar GaN LED arrays for VR and AR
Researchers fabricate 6336PPI devices with a view to future near-eye applications.