28 July 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
28 July 2025
AlYN-barrier GaN HEMTs for next generation devices
Researchers demonstrate low subthreshold swing and high on/off current ratio.
28 July 2025
Low-cost, scalable process for integrating GaN transistors onto silicon CMOS chips
An MIT-led team shows how Intel 16 22nm FinFET metallization and passive options enable the incorporation of components such as neutralization capacitors.
28 July 2025
Singapore opens NSTIC (GaN) as first national facility for gallium nitride
A*STAR, DSO and NTU Singapore partner on the National Semiconductor Translation and Innovation Centre for Gallium Nitride.
28 July 2025
Mass production QF-HVPE of GaN-on-GaN system
Researchers claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
28 July 2025
Monolithic HEMT– micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
28 July 2025
Tracking down sources of efficiency droop
Researchers at UIUC have modified the ABC model to extract the impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
31 May 2025
Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.
