For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month...

19 January 2026

PhotonDelta launches Global Photonics Engineering Contest at PIC Summit USA

Prize of up to €2m investment and €100,000 in services to be announced in August

19 January 2026

ALLOS and Ennostar partner on 200mm GaN-on-Si LED epiwafers for micro-LED volume production

Partnership paves way for 300mm GaN-on-Si LED epiwafers, enabling integration with logic

19 January 2026

Snow Lake extends option agreement for Mound Lake Gallium Project

Extension with Canadian Uranium Corp coincides with US proclamation on adjusting imports of processed critical minerals

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16 January 2026

Reducing wafer bow in GaN-on-QST growth

Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.

8 January 2026

Metal-modulated cubic GaN epitaxy

Process enables improved morphology and phase purity in red-light-emitting samples.

18 December 2025

Quasi-vertical selective area growth GaN diode on silicon

Device demonstrates non-destructive avalanche breakdown at 720V.

11 December 2025

Patterning GaN for improved red LEDs

Square 300µm template region enhances LED external quantum efficiency by 57%.

4 December 2025

Semi-polar epitaxial layer overgrowth improves micro-LED performance

Researchers report efficiency and power benefits

27 November 2025

Nitrogen-polar III-N HFETs on 200mm sapphire substrates

Researchers demonstrate MOCVD growth with a view to industrial cost-effective, large-scale production.

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19 January 2026

IDTechEx assesses the status of 800V for EV power electronics
IDTechEx analyses the adoption of silicon carbide and gallium nitride.

19 January 2026

Power SiC faces overcapacity downturn until 2027–2028, before device market grows to nearly $10bn by 2030
In 2025, utilization rates in the silicon carbide supply chain are down to about 50% for upstream processing and 70% for device processing, reckons Yole.

19 January 2026

Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.

19 January 2026

Far-UVC LEDs on c-plane sapphire
Devices with a 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.

19 January 2026

Patterning gallium nitride for improved red LEDs
A square 300μm-square patterned template region is found to enhance red LED external quantum efficiency by 57%.

19 January 2026

Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report benefits for both efficiency and power.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.

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