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Honeywell
9 June 2025

Imec and Ghent University present fully integrated, single-chip microwave photonics system for compact and versatile signal processing

Programmable solution for higher-speed wireless communication networks and low-cost microwave sensing

6 June 2025

BluGlass to supply Indian Department of Defence with GaN lasers

Firm secures first order from Solid State Physics Laboratory

5 June 2025
Monolithic HEMT-micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
5 June 2025

Renesas abandoning SiC production plans amid Chinese price war and Wolfspeed uncertainty

Silicon carbide team at Takasaki plant disbanded

5 June 2025

Micro-gravity manufacturing firm Space Forge to be CISM’s first incubation client

Swansea University’s Centre for Integrative Semiconductor Materials to enable terrestrial scale-up

4 June 2025

WIN launches linearity optimized 0.12µm GaN power process

NP12-1B technology provides 28V operation for high-power applications across K-band to V-band

4 June 2025

Fraunhofer IAF develops semi-automated manufacturing process for cost-efficient resonantly tunable quantum cascade laser modules

Flexible and scalable method efficiently combines laser sources into a multi-core system

4 June 2025

Indium Corp joins Virginia Tech’s Center for Power Electronics Systems consortium

Firm to leverage innovations in materials science and align R&D initiatives to address future power device requirements

3 June 2025

UK Electronics Skills Foundation launches Government-funded Semiconductor Skills, Talent and Education Programme

STEP to enable young people to pursue Electronics Engineering careers

3 June 2025

NUBURU accelerates M&A strategy with $100m flexible growth capital

Strategic growth potential enhanced through access to capital and key acquisition targets

2 June 2025

Sumitomo Electric and Osaka Metropolitan fabricate GaN HEMT on 2-inch polycrystalline diamond

Enhancing capacity and reducing power consumption for core communication devices

31 May 2025

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month

Bruker
CS Clean
Vistec
News Features
22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
17 April 2025
RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in 32-bit device.
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Feature Downloads
31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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