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Honeywell
30 April 2025

UV-C LED disinfection system maker AquiSense closes Series A investment round

Funds to accelerate growth in water treatment applications

30 April 2025

Fraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes

Single-gate AlGaN/GaN HEMT used as a bidirectional switch in low-voltage 3-level T-type converter

29 April 2025

Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue.

29 April 2025

Seoul Semi’s micro-LED patents infringed by Laser Components, judges Unified Patent Court

Court orders sales ban and recall and destruction of infringing products

28 April 2025

Semikron Danfoss’ module with ROHM’s latest 2kV SiC MOSFETs integrated into SMA’s large-scale solar system

SEMITRANS 20 module targeted at 1500VDC applications

28 April 2025

Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold

Mg-implanted guard ring reduces electric field concentration at gate electrode, boosting breakdown voltage from 1.6kV to 5.15kV

25 April 2025

Navitas strengthens corporate governance

Board member Hendrix made chair; executive steering committee formed to advance growth strategy

25 April 2025
Atomic layer etch surface treatment for AlGaN Schottky barrier diodes
Process significantly increases breakdown voltage and reduces current leaks.
24 April 2025

Northeast Microelectronics Coalition awards $1.43m to 19 firms through PROPEL Operations Program

Funding to reduce operational costs and accelerate commercialization of AI, quantum and radar technologies

24 April 2025

SemiLEDs’ quarterly revenue growth boosted by buy-sell purchase orders of equipment

Shift to fabless business model to reduce idle capacity charges and minimize R&D associated with chip manufacturing

22 April 2025

NUBURU secures funding to eliminate $3.4m in outstanding accounts payables

Financial flexibility paves way for strategic acquisitions in defense & security market

17 April 2025
RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in 32-bit device.
Bruker
CS Clean
Vistec
News Features
10 April 2025
GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces Si and C contamination on free-standing substrate surface and in channel layer.
3 April 2025
Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO delivers low on-resistance and high breakdown voltages.
26 March 2025
Reducing energy costs for AI and data processing
Chinese–German research reduces SM-VCSEL energy per bit to 168fJ at 60Gbits/s.
20 March 2025
Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.
13 March 2025
Full-color monolithic micro-LED displays
Pixels combine RGB sub-pixels via stacking and selective material etch and regrowth
6 March 2025
Aluminium nitride template strategies for brighter UVC LEDs
Up to 90% efficiency boost from nanolayer modification, growth-mode modulation, and indium-doping methods
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Feature Downloads
29 April 2025

Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Mg-implanted guard ring reduces electric field concentration at gate electrode, boosting breakdown voltage from 1.6kV to 5.15kV

29 April 2025

Imec identifies stable operating range for GaN MISHEMTs in RF power amplifiers
Findings support GaN-Si’s potential for high-reliability 5G+/6G communication systems.

29 April 2025

AlScN-barrier GaN HEMT with record high on-current
Epitaxial high-k insulator enhancement enables 4A/mm on-current density.

29 April 2025

AlN template strategies for brighter UVC LEDs
Up to 90% efficiency boost from nanolayer modification, growth-mode modulation, and indium-doping methods

29 April 2025

Full-color monolithic micro-LED displays
Pixels combine RGB sub-pixels via stacking and selective material etch and regrowth.

29 April 2025

Reducing energy costs for AI and data processing
Chinese–German research has reduced SM-VCSEL energy per bit to 168fJ at 60Gbits/s.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

31 March 2025

Gallium arsenide nano-ridge laser diodes on 300mm silicon
Researchers achieve record-low 6x104/cm2 misfit defect density.

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