News: Microelectronics
3 June 2026
Navitas collaborates with NVIDIA MGX Ecosystem to accelerate 800VDC AI infrastructure
On 29 May at the Taipei Nangang Exhibition Center, gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA participated in NVIDIA’s Partner Ceremony, which brought together key ecosystem partners supporting the NVIDIA AI Factory MGX platform, highlighting industry collaboration to accelerate the development of next-generation AI data centers powered by emerging 800VDC rack architectures.
Picture: Navitas’ Taiwan country manager Stacey Cho with the NVDIA executive team.
Navitas’ 800V-to-6V DC–DC power delivery board (PDB) is being shown at NVIDIA’s AI Factory MGX Ecosystem Showcase at COMPUTEX 2026 in Taipei, Taiwan (2–5 June). Powered by Navitas GaNFast technology, the PDB eliminates the need for a traditional 48V intermediate bus converter (IBC) stage within the compute server trays, maximizing system efficiency, reliability and valuable real estate.
The PDB features 16 GaNFast FETs rated at 650V, 11mΩ, in the latest DFN8x8 dual-cooled package, aiming 97.5% peak efficiency, operating at 1MHz switching frequency, and enabling a power density of 2100W/in3. About 20% thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximizing transient performance and enhancing power distribution efficiency.
“As AI workloads continue to scale and drive unprecedented demand for compute, power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories,” says Navitas’ president & CEO Chris Allexandre. “Through our collaboration with NVIDIA within the MGX ecosystem, Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density, a smaller system footprint, and improved thermal performance, helping accelerate the transition to more efficient and scalable AI infrastructure.”
Navitas provides a portfolio of wide-bandgap (WBG) power technologies that form the foundation of next-generation AI factory infrastructure. Its GeneSiC silicon carbide solutions enable efficient power delivery from the grid to the AI compute rack, supporting critical applications such as solid-state transformers (SSTs) with ultra-high-voltage 2300V and 3300V SiC power modules, and high-power three-phase power supply units (PSUs), powered by the latest Generation 5 technology 1200V SiC MOSFETs. Together, these technologies help AI data centers achieve higher efficiency, greater power density, and enhanced system reliability at scale.
Navitas' GaNFast technology delivers the high-frequency, high-efficiency DC–DC power conversion required to support the rapidly growing power demands of AI GPUs. Leveraging the superior switching performance of GaN, Navitas solutions enable MHz-frequency operation, higher power density, and faster transient response, allowing power to be delivered more efficiently from the rack level directly to the GPU.
Through its portfolio of GaN and SiC technologies, Navitas continues to collaborate closely with NVIDIA within the MGX ecosystem, helping to enable open, modular AI infrastructure architectures and accelerating the industry's transition toward next-generation AI factories.
Navitas debuts 800V–6V DC–DC power delivery board at NVIDIA GTC
Navitas unveils 10kW DC–DC platform delivering 98.5% efficiency for 800VDC next-gen AI data centers
