News: Microelectronics
10 February 2026
Navitas unveils 10kW DC–DC platform delivering 98.5% efficiency for 800VDC next-gen AI data centers
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has unveiled a 10kW DC–DC power platform delivering up to 98.5% peak efficiency and 1MHz switching frequency, enabling what is claimed to be unprecedented power density to support the rapid, large-scale expansion of next-generation AI data centers.
The all-GaN 10kW 800V–to–50V DC–DC platform employs 650V and 100V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency and 98.1% full load efficiency in a full-brick (61mm x 116mm x 11mm) package, achieving 2.1kW/in3 power density.
The resulting production-oriented platform supports 800V–to–50V and +/–400V–to–50V architectures at 10kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers. See Navitas’ Whitepaper on ‘Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure’.
“The design platform enables the transition to HVDC data-center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1000-times more compute per query,” says president & CEO Chris Allexandre. “Navitas continues to redefine what’s possible in AI data-center power, with the 10kW DC–DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable,” he claims.
The 10kW DC–DC platform is being evaluated by key data-center customers through collaborative development and will make its debut in the Navitas booth (#2027) at the IEEE Applied Power Electronics Conference and Exposition (APEC 2026) in San Antonio, TX, USA (22–26 March).
