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Germanium–tin MQW LEDs on 12-inch silicon substrate

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Fabricating 330ppi monolithic GaInN RGB pixels

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GaN:AlN superlattice UVC LEDs boost light extraction

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Next Level Epitaxy for aluminium nitride thin films

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Recessing metal contacts for gallium nitride transistors

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Auger recombination’s impact on InGaN LED efficiency

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Spalling-induced GaN lift-off and transfer

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MOCVD mid-to-long wavelength IR quantum cascade lasers on Si

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Silicon-based InAs QD laser operation above 150°C

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Balancing charge to boost Ga2O3 breakdown beyond 10kV

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Gallium oxide flash memory

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Improving micron-scale AlGaInP red LED performance

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Monolithic integration of III-V lasers & silicon photonics

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Co-doping boost for quantum dot lasers on Si(001)

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GeSn VCSE p-i-n diodes bonded on 200mm silicon

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AlScN ferroelectric FETs for monolithic 3D NVM integration

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NTT achieves 300GHz-band high-speed data transmission with beamforming

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All-MOCVD 980nm laser on (001) silicon

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InAs quantum dot lasers buttcoupled to SOI waveguides

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InAs quantum dot lasers on silicon carbide substrate

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Record sub-micron LED red emission efficiency

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Emerging substrates market growing at 27% CAGR to over $264m by 2028

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Mitsubishi Electric develops SBD-embedded SiC-MOSFET with new structure for power modules

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CEA-Leti proof of concept demonstrates higher electron mobility in GeSn than in silicon or germanium

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Annealing InP quantum dot MBE structures for laser

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Re-assessing assumptions on internal quantum efficiency

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Red InGaN LEDs for visible light communications

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Thick single quantum well InGaN LEDs with high external quantum efficiency and low droop

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QPT’s modules enable GaN to operate at up to 20MHz without overheating or RF issues

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Infineon launches European Union projects for power electronics and artificial intelligence

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Progress towards complementary GaN on silicon

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Indium arsenide quantum dot lasers on silicon with simple GaAs buffer

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First transverse DUV-LEDs without n-AlGaN layers

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MOVPE core–shell AlGaN nanorods for UV emission

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Green exciton emission from nanowire micro-LEDs

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GaN on silicon through surface-activated bonding

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Commercialization of 800V for EVs to play crucial role in growth strategy of OEMs

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CSA Catapult celebrates fifth anniversary

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