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GaN Systems launches Gen4 GaN power platform
Efficiency and power density improvements unlock extra total system cost savings
Indian Institute of Science develops fully indigenous GaN power switch
Centre for Nano Science and Engineering and Department of Electrical Engineering produce 8A, 200V normally-off cascode GaN-on-Si HEMT
Guerrilla RF updates revenue guidance, targeting 30% growth in 2023 and 40% in 2024
Strategy refocused to achieve profitability by Q2/2024
Cambridge GaN Devices incorporates individual 2D barcode on GaN ICs
Manufacturing position on wafer identified using commercial code reader
Infineon providing 1200V CoolSiC MOSFETs for Infypower’s EV charger stations
Infypower’s 30kW DC EV charging module efficiency boosted by 1%
Teledyne e2v HiRel releases rad-tolerant L- and S-band RF LNA for space & radar applications
Gain of 21dB for 1–6GHz with sub-0.37dB noise figure and 19dBm output
IQE and VisIC to co-develop D-Mode GaN power devices for EVs
200mm GaN power epiwafers to be developed at IQE’s UK facilities
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