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CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration
Wafer-level assembly of SiGe HBT, RF SOI and passive technologies allows dense co-integration of best-in class functions
Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap
Collaboration with TSMC yields Imax up to 690µA/µm; partnership with Intel yields improved fab-compatible modules for source/drain contact formation and gate stack integration, with reduced EOT
NTT reports first RF operation of AlGaN transistors with Al-content over 0.75
Expanding applications of AlN from power conversion to post-5G wireless communications
CHIPX to establish 8-inch GaN-on-SiC wafer fab in Malaysia
Front-end manufacturing to span infrastructure, R&D, engineering, talent development, and technology transfer
Navitas expands global distribution network with Avnet
Building on existing Avnet Silica (Europe) relationship to support high-growth high-power markets
Wise Integration, Powernet and KEC sign MoU to co-develop SMPS solutions for AI server power supplies in Korea
Powernet to lead development of new SMPS designs using Wise’s WiseGan and WiseWare technologies; KEC to manage back-end manufacturing
Cornell develops HEMTs on single-crystal AlN substrate for RF power amplifiers
Usage of gallium reduced by several orders of magnitude
SemiQ launches Gen3 1200V S3 modules for high-power industrial and EV applications
Family includes 608A half-bridge module with 2.4mΩ RDSon and best-in-class thermal resistance
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