AES Semigas

Honeywell
1 September 2025

Nagoya University produces gallium oxide pn diodes with double current-handling capacity

New method uses standard industrial processes to achieve higher voltage, increased stability, and energy efficiency

28 August 2025
E-mode GaN HEMT breakdown beyond 10kV
Optimized RESURF structure enables improved breakdown voltage–on-resistance trade-off.
28 August 2025

Toshiba launches 650V third-generation SiC MOSFETs in TOLL package

Three new devices boost efficiency and power density for industrial equipment

28 August 2025

SweGaN, Ericsson, Saab and Chalmers collaborate on 6G GaN power amplifier project

Vinnova-funded GaN6G+ to develop high-efficiency GaN-based PAs for 6G

26 August 2025

CGD appoints Robin Lyle as VP R&D

Experience of higher-power systems, modules and gate drivers to aid extension of product portfolio

26 August 2025

Toshiba and SICC sign MOU on silicon carbide power semi wafer collaboration

SICC to improve wafer quality and reliability for SiC power semi manufacturers

26 August 2025

Infineon introduces 75mΩ industrial CoolSiC MOSFETs 650V G2 for medium-power applications with high power density

Package options include TOLL, ThinTOLL 8x8, TOLT, D2PAK, TO247-3 and TO247-4

26 August 2025

Filtronic secures record order from SpaceX

First order for E-band GaN SSPAs

Bruker
LayTec

Microelectronics UK

Book This Space