AES Semigas

HoribaHoriba
21 June 2024

Navitas’ GaNFast power ICs used in Lenovo’s Xiaoxin 105W and Legion C170W fast chargers

New high-speed GaN chargers designed for daily travel and gaming

21 June 2024

TI and Delta collaborating on EV on-board charging

Joint innovation lab to enable Delta to leverage TI’s digital control and GaN technology to enhance power density and performance of EV power systems

21 June 2024

Teledyne e2v HiRel releases enhanced plastic UHF to S-band ultra-low-power LNA for space applications

150nm E-mode pHEMT process available in 16-pin QFN 3mm x 3mm x 0.90mm plastic surface-mount package

21 June 2024

BAE and GlobalFoundries collaborate on supply of essential semiconductors for US national security programs

Focus on US chip manufacturing and joint R&D for advanced chip technologies including GaN-on-Si

21 June 2024

Guerrilla samples broadband gain block, extending amp core from 8GHz to 11GHz

New GaAs pHEMT amplifier provides 17dB gain, 21.8dBm OP1dB compression, 35.3dBm OIP3 linearity over multiple octaves, including L-, C- and X-band

21 June 2024

Infineon launches CoolGaN 700V G4 power transistor product family

13 devices with RDS(on) spanning 20–315mΩ in various packages enable power systems from 20W to 25,000W

20 June 2024

Renesas completes acquisition of Transphorm

Renesas introduces 15 new GaN-based reference designs

20 June 2024
GaN HEMTs on 8-inch sapphire
Researchers seek to reduce production costs for devices with blocking voltages beyond 1200V.
Bruker
Aixtron
K-Space
LayTec

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