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Fraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes
Single-gate AlGaN/GaN HEMT used as a bidirectional switch in low-voltage 3-level T-type converter
Infineon launches CoolSiC MOSFET 750V G2 technology
Ultra-low RDS(on) suit automotive and industrial power electronics applications
Semikron Danfoss’ module with ROHM’s latest 2kV SiC MOSFETs integrated into SMA’s large-scale solar system
SEMITRANS 20 module targeted at 1500VDC applications
Novel Crystal Technology boosts gallium oxide MOSFET power figure of merit record by 3.2-fold
Mg-implanted guard ring reduces electric field concentration at gate electrode, boosting breakdown voltage from 1.6kV to 5.15kV
Navitas strengthens corporate governance
Board member Hendrix made chair; executive steering committee formed to advance growth strategy
Northeast Microelectronics Coalition awards $1.43m to 19 firms through PROPEL Operations Program
Funding to reduce operational costs and accelerate commercialization of AI, quantum and radar technologies
ROHM adds high-power-density 4-in-1 and 6-in-1 SiC power modules in HSDIP20 package
Compact high-heat-dissipation design miniaturizes power conversion circuits in EV OBCs
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