AES Semigas

HoribaHoriba
24 April 2024

Transphorm and Weltrend add 150mΩ and 480mΩ 650V integrated GaN system-in-packages

SuperGaN-based SiP family now spans three devices, expanding power level support for wider range of adapters and chargers

23 April 2024

UK’s CSA Catapult and Sarawak’s SMD sign MoU

Collaborations targeted at chip design and manufacturing for automotive and space industries

19 April 2024

Virtual Forest adopts Navitas’ GaNFast for 2250W solar-powered irrigation pump

GaNSense half-bridge power ICs monolithically integrate two GaN power FETs with GaN drivers, level-shifters, protection features and high-efficiency loss-less current sensing

18 April 2024

EU-funded Chips JU selects four new pilot lines to be implemented in Europe

Wide-bandgap pilot line for system-in-package fabrication at Finland’s Tampere University

17 April 2024

Infineon provides Shanghai-based FOXESS with power semiconductors

CoolSiC MOSFETs 1200V plus EiceDRIVER gate drivers to be used in industrial energy storage; IGBT7 H7 1200V devices to be used in string PV inverters

15 April 2024

Infineon receives ‘GaN Strategic Partner of the Year’ award from Chicony

Taiwan-based power supply maker acknowledges “product selection, application expertise, reliability and cost-effectiveness”

12 April 2024

Coherent secures $15m in CHIPS Act funding via CLAWS Hub

Funding to accelerate commercialization of wide- and ultrawide-bandgap semiconductors, including SiC and single-crystal diamond

11 April 2024
HEMTs with 3C-SiC on 4H-SiC interfaces
Researchers claim first device on little-studied structure.
Bruker
Aixtron
K-Space
LayTec

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