Sign Up to Our Free Weekly E-Brief
LEDsMarketsMicroOptoPVSuppliers
Nagoya University produces gallium oxide pn diodes with double current-handling capacity
New method uses standard industrial processes to achieve higher voltage, increased stability, and energy efficiency
Toshiba launches 650V third-generation SiC MOSFETs in TOLL package
Three new devices boost efficiency and power density for industrial equipment
SweGaN, Ericsson, Saab and Chalmers collaborate on 6G GaN power amplifier project
Vinnova-funded GaN6G+ to develop high-efficiency GaN-based PAs for 6G
CGD appoints Robin Lyle as VP R&D
Experience of higher-power systems, modules and gate drivers to aid extension of product portfolio
Toshiba and SICC sign MOU on silicon carbide power semi wafer collaboration
SICC to improve wafer quality and reliability for SiC power semi manufacturers
Infineon introduces 75mΩ industrial CoolSiC MOSFETs 650V G2 for medium-power applications with high power density
Package options include TOLL, ThinTOLL 8x8, TOLT, D2PAK, TO247-3 and TO247-4
Filtronic secures record order from SpaceX
First order for E-band GaN SSPAs
Follow us on X (Twitter)
Join our LinkedIn network