AES Semigas

Honeywell
26 January 2026
Increasing 2DEG density with aluminium nitride barriers
Researchers claim 1.3x1014cm2 record for AlN/GaN structures.
16 January 2026
Reducing wafer bow in GaN-on-QST growth
Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.
14 January 2026

Mitsubishi Electric shipping samples of four new trench SiC MOSFET bare dies for power semiconductors

Advanced bare dies for diverse embedding needs, enabling lower power consumption in power electronics equipment

13 January 2026

Altum RF renews ISO 9001:2015 certification

Quality management system certification extended through 2029

12 January 2026

Enphase Energy starts shipping IQ9 Commercial Microinverters in USA

Firm’s first GaN-powered microinverter supports domestic content requirements and Foreign Entity of Concern compliance

6 January 2026

Cambridge GaN Devices appoints Fabio Necco as new CEO

Co-founder & former CEO Giorgia Longobardi continues as chief marketing officer and board member

5 January 2026

Mission Microwave to design and deliver solid-state power block upconverters for Telesat Lightspeed

Compact GaN amplifiers to be integrated into Landing Station infrastructure at gateway sites worldwide

29 December 2025

Fraunhofer IAF and Max Planck Institute for Radio Astronomy provide low-noise amplifiers for ALMA radio telescope array

MPIfR assembles and qualifies modules incorporating IAF’s InGaAs mHEMT-based MMICs

Bruker
LayTec

Microelectronics UK

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