News: Microelectronics
5 August 2025
Beijing IP Court denies Innoscience’s appeal against EPC’s compensated-gate patent
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications —says that the Beijing IP Court has denied the appeal filed by China-based gallium nitride-on-silicon (GaN-on-Si) power solutions firm Innoscience (Suzhou) Technology Co Ltd, reaffirming the validity of EPC’s Chinese Patent No. ZL201080015425.X, ‘Compensated gate MISFET and method for fabricating the same’.
Two of EPC’s patents covering enhancement-mode GaN FETs and their fabrication had been challenged by Innoscience in China. The China National Intellectual Property Administration (CNIPA) had previously validated both patents in April and May 2024, but Innoscience requested reconsideration of the decision concerning the compensated-gate patent.
“EPC’s innovations in GaN power devices reflect nearly 20 years of research and development,” notes EPC’s CEO & co-founder Alex Lidow. “We welcome the Beijing IP Court’s decision as confirmation of the strength of our intellectual property.”
EPC says that it continues to benefit from a decision by the US International Trade Commission, which ruled that Innoscience infringed EPC’s intellectual property. That ruling, which remains in full force and effect, led to an exclusion order barring the importation of infringing Innoscience products into the USA.
USPTO gives ruling on EPC patent disputed by Innoscience
