News: Microelectronics
22 May 2026
Navitas showcasing GaN and SiC-based solutions for AI data-center, energy and grid infrastructure, and industrial electrification at PCIM
In booth#544 (Hall 9) at PCIM 2026 (Expo & Conference on Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) in Nuremberg, Germany (9–11 June), Navitas Semiconductor Corp of Torrance, CA, USA is showcasing its latest gallium nitride (GaN) and silicon carbide (SiC) products for AI data-center, energy and grid infrastructure, and industrial electrification.
Highlights include the latest in Navitas’ GaNFast FETs, starting from 0.8mΩ at 100V to 11mΩ at 650V, along with expanded offerings across the GaNSafe, GaNSlim and bi-directional GaN IC product families.
Navitas is showcasing 3300V, 2300V and 1200V Trench-Assisted Planar (TAP) SiC devices using advanced reliability SiCPAK press-fit modules, alongside recently announced 5th-generation GeneSiC TAP MOSFETs for AI data centers in QDPAK and TO247-LP.
For the AI data center, Navitas is exhibiting two solutions that enable a swifter transition to the 800VDC standard using GaN:
- 20kW 800V-to-6V power delivery board targeting 97.5% peak efficiency, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency, reliability, cost-effectiveness and power density; and
- 10kW 800V-to-50V DC–DC platform featuring 2.1kW/in3 power density and 98.5% peak efficiency, leveraging the latest 650V and 100V GaNFast FETs to deliver what is claimed to be industry-leading efficiency, power density and performance for 800VDC and ±400V power architectures.
For grid and energy infrastructure, Navitas is showcasing two SST topologies enabled by Navitas’ GeneSiC UHV and HV technology:
- an EPFL-developed full SST cell integrating the primary converter stage, transformer, and secondary conversion stage using a novel single-stage topology, leveraging Navitas’ 3300V and 1200V SiC technology; and
- 50kVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300V SiCPAK MOSFET modules, using Texas Instruments’ C2000 real-time microcontrollers and UCC218915-Q1 gate driver.
Navitas is also showcasing industrial electrification and motor control inverter solutions based on GaNSense Motor Drive ICs, integrating lossless current sensing, voltage sensing and temperature protection for improved performance and robustness. In addition, GaNSlim power ICs are showcasing simplified development of high-efficiency, high-power-density solutions with what is claimed to be industry-leading integration for performance computing applications.
Navitas is also presenting in the following panel discussions on the Technology Stage (Hall 4):
- 9 June (1:25-2:25pm CET): Componeers Panel Session: ‘Automotive, AI, Humanoid Robots — the future of GaN’, by Llew Vaughan-Edmunds, VP & general manager, GaN business unit;
- 10 June (11:45am–12:45pm CET): Power Electronics News Panel Session: ‘The Evolution in Data Center Power Distribution’, by Llew Vaughan-Edmunds, VP & general manager, GaN business unit;
- 10 June (2:30–3:30pm CET): Bodo’s Panel Session: ‘Riding the SiC Wave Efficiently’, by Paul Wheeler, VP & general manager, High Voltage SiC business unit; and
- 11 June (11:45am–12:45pm CET): Bodo’s Panel Session: ‘What’s up, what’s next for GaN?’, by Llew Vaughan-Edmunds, VP & general manager, GaN business unit.
Navitas debuts 800V–6V DC–DC power delivery board at NVIDIA GTC
Navitas unveils 10kW DC–DC platform delivering 98.5% efficiency for 800VDC next-gen AI data centers
