News: Microelectronics
17 March 2026
Navitas debuts 800V–6V DC–DC power delivery board at NVIDIA GTC
Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has announced its latest DC–DC power delivery board (PDB) powered by GaNFast technology, enabling direct conversion from 800V to 6V in one power stage. This eliminates the traditional 48V intermediate bus converter (IBC) stage within the compute server trays, maximizing system efficiency, reliability and valuable real-estate, to deliver a simple power delivery solution to support advanced NVIDIA AI infrastructure.
Traditional enterprise and cloud architectures built around legacy 54V in-rack power distribution are increasingly unable to support the megawatt rack densities demanded by future accelerated computing platforms. Addressing these escalating power requirements requires a fundamental shift in data-center power architecture, says Navitas.
NVIDIA is leading the transition to 800VDC data-center power infrastructure, and Navitas is delivering the technologies to support this shift. Navitas says that its 800V–50V DC–DC platform introduction was a breakthrough in efficiency and power density; however, 800V to 50V conversion still required one more power conversion stage to deliver to voltage regulator modules (VRM), which typically operated at 12V or below.
As NVIDIA MGX architecture evolves with the future rack design for high compute and power-density systems for greater AI performance, they will require direct 800V-to-6V (or 12V) conversion to maximize rack power density and overall efficiency. Converting directly from 800V eliminates the 50V IBC stage, reducing conversion losses, freeing valuable board space, and improving end-to-end system efficiency. Navitas’s 6V output architecture improves system performance versus other already released PDBs by cutting the VRM conversion ratio in half.
Navitas’s 800V–6V DC–DC PDB aims to deliver up to 96.5% peak efficiency at full load with 1MHz switching frequency, enabling a power density of 2100W/in3. About 20% thinner than a mobile phone, its ultra-low profile allows for extremely close integration with the GPU board, maximizing transient performance and enhancing power distribution efficiency.
Next-gen 800V–6V DC–DC PDB eliminates the 48V IBC stage, increasing system efficiency, reliability and saving PCB area
The primary side employs 16 x 650V GaNFast FETs in the latest DFN8x8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25V silicon MOSFETs. 1MHz switching enables the use of the smallest passives and planar magnetics, delivering maximum power density.
“With our industry-leading 800V-to-6V DC–DC PDB, Navitas is setting a new benchmark for data-center power architectures,” says president & CEO Chris Allexandre. “By eliminating an entire conversion stage, we lower system cost and power losses while freeing up valuable board space, enabling customers to dedicate more real-estate to compute, memory and GPUs and to unlock maximum performance for AI workloads,” he adds. “Our latest GaNFast-based solution shows how Navitas is pushing the boundaries of AI data-center power.”
The PDB is being showcased at NVIDIA’s GPU Technology Conference (GTC 2026) in San Jose, CA, USA (16–19 March) and also in booth #2027 at the IEEE Applied Power Electronics Conference (APEC 2026) in San Antonio, Texas (22–26 March).
Navitas supporting 800VDC power architecture for NVIDIA’s next-gen AI factory computing platforms
