News: Microelectronics
4 June 2026
Mitsubishi Electric to ship 5th-generation trench SiC MOSFET bare die samples
In late June, Tokyo-based Mitsubishi Electric Corp will begin sequentially shipping samples of two types of new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) in bare die form.
The new SiC MOSFETs are designed for use in inverters for drive motors and eAxles (integrating the motor, inverter and gearbox) of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs), and other electrified vehicles (xEVs). They feature Mitsubishi Electric’s proprietary trench structure and achieve what is reckoned to be industry-leading low on-resistance about 25% lower than that of existing 4th-generation trench SiC MOSFET products (with the same rated voltage and threshold voltage adjusted).
The products were displayed at PCIM 2026 (Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) Expo & Conference in Nuremberg, Germany (9–11 May), and are also being displayed at exhibitions in Japan, China and other countries.
Mitsubishi Electric says that its 5th-generation SiC MOSFET bare dies will contribute to the performance and miniaturization of xEV inverters and eAxles, which will extend the range and improve the power efficiency of xEVs. In addition, the firm’s proprietary manufacturing process technology suppresses performance degradation and fluctuations in power loss and on-resistance, ensuring stable quality even after long-term use, and contributing to the durability and performance of xEV inverters and eAxles.
Mitsubishi Electric to ship samples of SiC MOSFET bare die for xEVs
