News: Microelectronics
14 January 2026
Mitsubishi Electric shipping samples of four new trench SiC MOSFET bare dies for power semiconductors
On 21 January, Tokyo-based Mitsubishi Electric Corp will starting shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) bare dies designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power. The new power semiconductor bare dies will contribute to efforts to embed advanced bare dies in various power electronics equipment to lower power consumption while maintaining performance.
Mitsubishi Electric is exhibiting the new trench SiC MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo (21–23 January), as well as exhibitions in North America, Europe, China, India and elsewhere.
Picture: (Left) Wafer with trench SiC MOSFETs (rendition). (Right) Layout of trench SiC MOSFET bare die (rendition of shipping sample).
The market for power electronics equipment is expected to expand in line with global efforts targeting decarbonization. As part of this trend, the demand is growing for power semiconductors embedded with highly efficient bare dies that enable EV traction inverters and renewable energy power supply systems to consume less power while maintaining their high performance and quality.
Since 2010, Mitsubishi Electric has been selling SiC power semiconductor modules that significantly reduce the power consumption of air conditioners, industrial equipment and railway vehicle inverter systems. To meet the demand for advanced power semiconductor bare dies, Mitsubishi Electric is now introducing four new trench SiC MOSFET bare dies that are similar to the company’s existing trench SiC MOSFET bare dies (launched on 12 November 2024), but utilize a proprietary trench SiC MOSFET structure to reduce power loss by about 50% compared to planar SiC MOSFETs. Furthermore, manufacturing processes including Mitsubishi Electric’s proprietary gate oxide film manufacturing method suppress variations in power loss and on-resistance to ensure stable quality over a long period of use.
Mitsubishi Electric to ship samples of SiC MOSFET bare die for xEVs
