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Honeywell
9 October 2025
Electrochemical III-nitride device lift-off
Plotting a route to damage-free integration with diverse optoelectronic platforms.
9 October 2025

JX making further investment to increase InP substrate production

Total investment of ¥3.3bn to boost capacity by about 50%

8 October 2025

NOVOSENSE, UAES and Innoscience cooperating on power electronics for EVs

Analog and mixed-signal IC design to combine with GaN device technology and automotive system integration

7 October 2025

NUBURU to acquire Orbit, expanding defense & security hub with operational resilience solutions

Acquisition positions Nuburu Defense in defense-grade SaaS platforms

7 October 2025

Imec launches 300mm GaN program to develop low- and high-voltage power devices and reduce manufacturing costs

AIXTRON, GlobalFoundries, KLA, Synopsys and Veeco join as first partners

7 October 2025

Veeco launches Lumina+ MOCVD system

Rocket Lab places multi-tool order to double production of space-grade solar cells

6 October 2025

POET and Semtech launch 1.6T optical receivers for AI networks

Optical Interposer platform integrates FiberEdge technology to boost sensitivity and power efficiency at 200G per lane

6 October 2025

POET and Sivers collaborate on external light sources for co-packaged optics and next-gen AI market

Sivers’ high-power DFB laser technology to combines with POET’s Optical Interposer platform

3 October 2025

Blue Laser Fusion wins US DOE 2025 INFUSE project award

Colorado State University to collaborate on high-energy pulsed laser optics to advance fusion energy commercialization

2 October 2025
Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices achieve 180K T0, comparable to state-of-the-art devices on native III-V substrates.
2 October 2025

Axcelis and Veeco to merge, forming fourth largest US wafer fabrication equipment supplier

Balance sheet to support investment in organic growth initiatives and share repurchase program

1 October 2025

Riber’s first-half 2025 revenue and earnings impacted by deliveries being concentrated into second-half

End-June order book of €27.7m supplemented by €14m in later orders

Bruker
CS Clean
Vistec
News Features
25 September 2025
MOCVD–MBE hybrid growth for green laser diodes
Lower growth temperature enabled by MBE eases thermal budget constraints.
11 September 2025
Boron nitride as a buffer and gate dielectric
GaN HEMTs demonstrate ultra-high ~1011 on/off current ratio.
4 September 2025
Laser transfer of blue micro-LED arrays
Rubber tape used as device carrier before thermo-compression bonding.
28 August 2025
E-mode GaN HEMT breakdown beyond 10kV
Optimized RESURF structure enables improved breakdown voltage–on-resistance trade-off.
21 August 2025
Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors
20 August 2025
D-band GaN power HEMTs on silicon
Researchers report highest-frequency device performance so far.
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Feature Downloads
22 September 2025

1200V fully vertical GaN-on-silicon MOSFETs
Fluorine-ion implant termination enables high breakdown.

22 September 2025

E-mode GaN HEMT breakdown beyond 10kV
An optimized RESURF structure enables an improved breakdown voltage–on-resistance trade-off.

22 September 2025

D-band GaN power HEMTs on silicon
Researchers report the highest-frequency device performance so far.

22 September 2025

Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors.

22 September 2025

Laser transfer of blue micro-LED arrays
Researchers in Shanghai have used rubber tape as a device carrier before thermo-compression bonding of the flipped chip array to the target substrate.

22 September 2025

University of Glasgow reports single-chip laser system with 983Hz linewidth
A topological interface state extended laser with optical injection locking has been integrated on an indium phosphide substrate.

1 September 2025

N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.

1 September 2025

Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift in wavelength constrained to 6.2nm between 1mA and 100mA injection current.

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