Honeywell
10 December 2025

UK and Canada collaborate on optical engine for faster, more efficient and more sustainable AI data centers

Trans-Atlantic partnership to accelerate global innovation and build new international supply chain

9 December 2025

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month

9 December 2025

BluGlass appoints CEO Jim Haden as executive director, replacing non-exec director Jean Michel Pelaprat

Continued board refresh brings leadership structure in-line with US best practice

9 December 2025

Ascent Solar closes up to $5.5m private placement

$2m upfront with up to $3.5m of potential proceeds upon full exercise of warrants

8 December 2025

Navitas and Cyient partner to accelerate GaN adoption in India

Firms to co-develop GaN products, digital and mixed-signal ICs, GaN-based system modules and design enablement platforms

8 December 2025

Ascent Solar announces up to $5.5m private placement priced at-the-market under Nasdaq rules

$2m upfront with up to $3.5m of potential proceeds upon full exercise of warrants

8 December 2025

IQE extends multi-year strategic supply agreement with Lumentum

Epiwafers for advanced sensing applications extending to new generation of consumer and automotive products

8 December 2025

Global IP dynamics highlight surging GaN innovation activity in Q3/2025, says KnowMade

Of 599 new patent families, 70% originate from Chinese players

5 December 2025

onsemi releases EliteSiC MOSFETs in T2PAK top-cool package

Enhanced thermal performance, reliability and design flexibility for automotive and industrial applications

5 December 2025

X-FAB’s XbloX accelerates time-to-market for scalable, high-performance SiC MOSFETs

Improved on-state resistance enables 30% area reduction

4 December 2025
Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report efficiency and power benefits
4 December 2025

Coherent expands silicon carbide platform from 200mm to 300mm

Larger-diameter, conductive SiC substrate addresses increasing thermal efficiency demands in AI data-center infrastructure

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News Features
27 November 2025
Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial cost-effective, large-scale production.
20 November 2025
Far-UVC LEDs on c-plane sapphire
Devices with 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.
13 November 2025
Inverting Ga-polar LEDs for N-polar benefit
Structure enables around 1000x light output over comparable N-polar LED.
30 October 2025
P-type layer etch for enhanced deep UV LEDs
Researchers achieve 10.9% increased light output power.
23 October 2025
Benefits of hexagonal mesa for micro-LEDs
Devices demonstrate enhanced current diffusion and uniformity.
16 October 2025
Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.
Feature Downloads
9 December 2025

Global IP dynamics highlight surging GaN innovation activity in Q3/2025
Of 599 new patent families, 70% originate from Chinese players, notes KnowMade.

9 December 2025

Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial costeffective, large-scale production.

9 December 2025

Inverting Ga-polar LEDs for N-polar benefit
Structure enables around 1000x light output over comparable N-polar LED.

9 December 2025

Benefits of hexagonal mesa for micro-LEDs
Devices demonstrate enhanced current diffusion and uniformity.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.

3 October 2025

Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.

3 October 2025

Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices have achieved a T0 characteristic temperature of 180K, comparable to state-of-the-art devices on native III-V substrates.