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June / July 2017
Indium gallium nitride solar cells on non-polar and semi-polar substrates
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Toward visible & ultraviolet III-nitride lasers on silicon
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Gallium nitride fin transistor with high linearity and output power
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Fluorinated graphene passivation for AlGaN transistors
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Optimizing trench profiles for power gallium nitride electronic devices
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Building up vertical GaN for high-power technology
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RF power semiconductor market growing at 9.8% CAGR to $2.5bn in 2022
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Gallium oxide transistor radio-frequency measurements
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Indium gallium arsenide quantum well transistors on 300mm silicon
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May / June 2017
Direct growth of III-V laser structures on silicon substrates
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Alcohol-based digital etch on arsenide and antimonide III-V semiconductors
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Epitaxial lift-off and wafer bonding for III-V photodetectors on silicon
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Ultraviolet photodetection with gallium nitride nanoflowers on silicon
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Non-polar gallium nitride ultraviolet photodetector on sapphire
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Direct hole injection plugs for InGaN LEDs
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Monolithic amber-green-blue nanopillar LEDs
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Monolithic gallium nitride vertical transistor and light-emitting diode
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Imec develops 200V & 650V dispersion-free normally-off/ E-mode GaN power devices on 200mm silicon
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Apr / May 2017
Getting the best cost and performance out of GaN-on-silicon devices
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Benefits and advantages of silicon carbide power devices over their silicon counterparts
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Towards polarized white light with tunnel junctions and hybrid growth
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Semi-polar InGaN laser diode/ waveguide photodiode combination
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Monolithic III-V transistors and laser diodes integrated on germanium
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Graphene phototransistor promises high-performance optoelectronics
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Mar / Apr 2017
Vertical gallium nitride moves for power electronics
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Gallium nitride on silicon on insulator metalorganic vapor phase epitaxy
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N-polar gallium nitride gives record power density and efficiency at 94GHz
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Bulk aluminium nitride platform for gallium nitride high voltage and power
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Silicon and III-nitride high-voltage monolithic cascode diode
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Bulk GaN substrate market growing at 10% CAGR to $100m in 2022, from 60,000 wafers in 2016
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Gallium nitride quantum dot emission at 232nm deep ultraviolet
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Aluminium indium gallium nitride electron-blocking layers
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Increasing light output power from gallium nitride LEDs with p-trenches
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Improving indium arsenide antimonide nanowire optical quality on silicon
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Feb 2017
Back-reflector for gallium indium nitride arsenide solar cells
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Avalanche photodiode with photomultiplier-like performance
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Light transmission from co-integrated laser and modulator on silicon
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Interface engineering for green indium gallium nitride laser diodes
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Gallium nitride thin-film transistors produced in 200°C process
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Non-polar aluminium gallium nitride from two-way pulsed precursor flow
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Metal-organic vapor phase epitaxy of nitrogen-polar gallium nitride
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Korea’s UNIST fabricates thinnest oxide semiconductor
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Atomic scaling of future electronic materials to lower dimensions
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Understanding graphene–semiconductor Schottky contacts
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Dec / Jan 2017
Persistent photoconductivity in nitride semiconductor UV photodetectors
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Continuous-wave roomtemperature broad-area quantum cascade lasers
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Multi-functional metamorphic buffer for InAs QW laser diodes on indium phosphide
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Heterogeneous integration of 2.3μm DFB laser diodes on silicon photonics
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High-quality AlN grown on nano-patterned sapphire substrates prepared by nano-imprint lithography
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Technical innovations in LEDs and power electronics converging to handle modulelevel thermal management
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Driving deployment of wide-bandgap power devices on 200mm
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GaN – A truly revolutionary semiconductor technology matures
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Normally-off gallium nitride power transistor on (110) silicon
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Crystal orientation and gallium nitride trench MOSFET performance
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Advancing high-frequency and high-power electron device technology
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Single III-V channel structure for complementary MOS transistors
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Black polycrystalline diamond transistors with high breakdown
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November 2016
Three-prong attack to improve quaternary solar cell MBE
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South Korea's Institute for Basic Science develops thinnest photodetector
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Indium phosphide on silicon template for optoelectronics
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Extending interband cascade VCSEL wavelengths to 3.4μm
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China: the future of world trade and the semiconductor industry
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Seeking source of green gap in InGaN light-emitting diodes
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Photo-electro-chemical lift-off of free-standing gallium nitride
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Low-resistance tunnel junction boosts InGaN nanowire LED performance
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Integrating gallium nitride LED with silicon drive transistor
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Silicon carbide technology preferred over traditional silicon technology
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October 2016
InGaN solar cells with positive temperature coefficient
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Two-dimensional GaN with graphene encapsulation
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Electrically driven single-photon emission from atomically thin diodes
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Combatting droop with thick single quantum wells on semi-polar GaN
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Reducing laser diode optical leakage with indium gallium nitride waveguides
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Flip-chip hybrid external-cavity laser array on silicon platform
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Germanium and silicon photonics
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Silicon monoxide passivation for gallium nitride transistors
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GaN power devices market growing at 86% CAGR to $280m in 2021
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Reducing subthreshold swing of gallium arsenide transistors
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Berkeley Lab-led team fabricates transistor with record 1nm-long gate
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September 2016
MIT and Masdar develop photovoltaic 'step cell'
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GaAsP solar cells on silicon with record 12% efficiency
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(590kb)
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Wafer reclaim for InGaAlP light emission
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Chemical lift-off of full-wafer gallium nitride with zinc oxide interlayer
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Reducing misfit dislocations in green semi-polar LEDs
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Monolithic band-engineered semi-polar white LED
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InGaN laser diode directly integrated with silicon
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InGaAs laser diode on exact germanium-on-silicon substrate
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Silicon photonics and III-V integration
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Continuous-wave room-temperature InAs quantum cascade laser
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Boosting transconductance in InGaAs finFETs
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Carbon nanotube transistors outperform silicon
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