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Microelectronics

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14 July 2020

Mitsubishi Electric develops GaN PA module for 5G base-stations

Surface-mount matching circuit shrinks size and boosts power efficiency

14 July 2020

EPC and Microchip co-develop 300W 16th brick 48V–12V DC-DC converter demonstration board

eGaN FETs plus digital signal controllers enable 730W/in3 power density

9 July 2020

Mitsubishi Electric unveils SiC MOSFET circuit simulation model

Model to contribute to more efficient circuit designs for power converters

8 July 2020

ROHM and LEADRIVE open joint lab in Shanghai

SiC-based EV power modules and inverters to be co-developed

8 July 2020

Infineon’s CoolSiC MOSFETs used in Ingeteam’s 400kW converter

Single EV charging point implements eight Infineon modules

7 July 2020

II-VI relying on GE’s IP to conquer power SiC markets

Patent deal to promote adoption of planar SiC MOSFETs

6 July 2020

Fraunhofer IAF embeds GaN power ICs as half-bridge in PCBs

Integrated 600V-class voltage converter allows modular system design

3 July 2020
Improving aluminium nitride nucleation and regrowth on sapphire
Researchers use ultra-high-temperature annealing to boost crystal quality with a view to power switching electronics.
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