Microelectronics

20 August 2026

EPC announces mass production of EPC2370 18V GaN FET for next-gen AI power architectures

Ultra-low 0.28mΩ eGaN FET has transient voltage rating of 22V, enabling higher-efficiency 1MHz-or-higher switching and increased power density for high-current DC–DC converters

19 August 2026

EPC Space launches 15V, 25V and 40V rad-hard eGaN FETs

Ultra-low on-resistance, high current capability, and exceptional radiation immunity for high-density space computing power conversion

17 August 2026

NoMIS demos 6.5kV large-die SiC MOSFET

Progress made on high-voltage roadmap to 10kV SiC MOSFETs and 20kV SiC IGBTs

13 August 2026

Electrochemical GaN HEMT exfoliation

Silicon substrate release method results in less than 2nm roughness of etched surfaces.

13 August 2026

BAE Systems advances to Phase 2 of DARPA’s THREADS program

Technologies for Heat Removal in Electronics at the Device Scale addressing temperature limitations in advanced RF electronics

11 August 2026

Soctera raises $4m in seed funding round

Funds to aid development of thermally optimized III-nitride millimeter-wave power amplifiers

11 August 2026

Navitas files patent infringement lawsuit against Renesas

Renesas’ major GaN product lines alleged to infringe four Navitas patents

7 August 2026

GaN HEMT short-circuit performance

Device achieves record 629μs withstanding time.