AES Semigas

Honeywell
19 December 2025

Leonardo to develop and deliver first four Italian next-gen radars for Michelangelo Dome long-range ballistic defence system

Contract includes supply of Ground Based Radar and Mobile Long Range Radar featuring fully digital AESA GaN technology

19 December 2025

onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si

GF’s 200mm eMode GaN-on-Si process to combine with onsemi’s silicon drivers, controllers and thermally enhanced packaging for smaller, more efficient systems

18 December 2025
Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.
18 December 2025

CGD wins Hyundai Open Innovation challenge

One-chip ICeGaN solution selected for robustness and ease of use when integrated into EV traction inverter power modules

15 December 2025

CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration

Wafer-level assembly of SiGe HBT, RF SOI and passive technologies allows dense co-integration of best-in class functions

15 December 2025

Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap

Collaboration with TSMC yields Imax up to 690µA/µm; partnership with Intel yields improved fab-compatible modules for source/drain contact formation and gate stack integration, with reduced EOT

15 December 2025

NTT reports first RF operation of AlGaN transistors with Al-content over 0.75

Expanding applications of AlN from power conversion to post-5G wireless communications

15 December 2025

CHIPX to establish 8-inch GaN-on-SiC wafer fab in Malaysia

Front-end manufacturing to span infrastructure, R&D, engineering, talent development, and technology transfer

Bruker
LayTec

Microelectronics UK

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