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onsemi releases EliteSiC MOSFETs in T2PAK top-cool package
Enhanced thermal performance, reliability and design flexibility for automotive and industrial applications
X-FAB’s XbloX accelerates time-to-market for scalable, high-performance SiC MOSFETs
Improved on-state resistance enables 30% area reduction
ROHM launches 13–65mΩ SiC MOSFETs in TOLL package
About 39% improved thermal performance enables high-power handling despite 26% smaller footprint and low 2.3mm profile
Infineon enhances Electreon’s wireless in-road EV charging with silicon carbide technology
Customized SiC modules maximize power density, enabling EV to operate 24 hours a day with smaller batteries
Filtronic awarded £1.2m funding to develop 550W Ka-band solid-state power amplifiers
UK Space Agency’s National Space Innovation Programme targets replacement of TWTAs
Vishay launches 1200V SiC MOSFET power modules in MAACPAK PressFit package
38mΩ and 75mΩ VS-MPY038P120 and VS-MPX075P120 combine silicon carbide with rugged transfer mold construction
US ITC preliminary determination finds violation of Infineon patent by Innoscience
Final determination could lead to import ban of products into USA
onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio
onsemi’s system integration, drivers and packaging to combine with Innoscience’s GaN wafers and high-volume manufacturing
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