News Subsites

29 October 2026

Red GaN LED external quantum efficiency at 20.8%

UCSB claims highest-performing device to date.

29 October 2026

Seoul Viosys begins mass production of rare-earth-free white light emitter, with chips as small as 10µm

WICOP 3 targeted at AR glasses and AI datacoms applications

29 October 2026

First Solar inaugurates first phase of South Carolina production facility

Staffing of 500 to rise to nearly 700 by mid-2027 when second phase completed

29 October 2026

Wolfspeed agrees multi-year deal to supply 1200V silicon carbide devices to BorgWarner

Long-term agreement supports 800V SiC-based inverter platform

28 October 2026

AXT raises private equity financing of up to $545m in Tongmei

Funding to expand manufacturing capacity for InP substrates and raw materials

27 October 2026

Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe

Austrian state funding of €319m under European Chips Act part of €1.1bn investment in Villach

26 October 2026

Infineon supplying world’s first 900V GaN monolithic BDS devices to Enphase

CoolGaN 900V monolithic BDS to be used in IQ Solid-State Transformer for AI data centers

26 October 2026

UIUC achieves record modulation bandwidth of 2.75GHz for GaN blue micro-LEDs

Team outlines micro-LED roadmap for massively parallel optical data links in AI computing and data centers

26 October 2026

Palomino gains first commercial purchase order from strategic hyperscaler customer

PO includes statement of work for delivery of GaN micro-LED communication chips for AI optical interconnects

23 October 2026

Vertical Semiconductor gains $73m in US CHIPS Act funding

Incentives to accelerate R&D on vertical GaN power transistors, unlock domestic production, and strengthen US in power infrastructure for AI and HPC

23 October 2026

Atomera signs JDA with IQE to bring high-performance, cost-effective RF GaN-on-Si to volume markets

Firms to co-optimize MST-enabled GaN-on-Si wafers, manufactured by IQE

22 October 2026

Thermal benefit of GaN-on-W power

Laser lift-off and transfer reduces thermal resistance by factor of 3.

13 October 2026

InGaN amber nano-LED with 10% external quantum efficiency

Device benefits from enhanced light extraction at 840nm diameter.

7 October 2026

Monolithic III-N complementary logic

Researchers claim record 154.1V/V maximum voltage gain, 10.4ns/stage RO delay, and first 6T-SRAM.

1 October 2026

Intrinsic polarization superjunctions

Lateral iPSJ diodes and transistors achieve highest V_BR among reported GaN-on-Si devices.

18 September 2026

In-situ dry repair and passivation

ICP mesa treatment reverses size-dependence of blue and green micro-LED EQEs

10 September 2026

TMAH and passivation to boost external quantum efficiency

Efficiency of 1μm LED increased 363% after treatment.

3 September 2026

Towards full-color GaN micro-cavity LEDs

Monolithic device demonstrates 260nm wavelength range, covering almost 70% of visible spectrum