Honeywell
28 September 2026

Wolfspeed adds Premium power substrates to 200mm silicon carbide portfolio

Multi-metric leap in quality enables better device yield

28 September 2026

Fraunhofer IAF develops broadband distributed amplifier MMIC for data centers, measurement systems and sensors

InGaAs-on-silicon HEMT with gate-length of 20nm enables 11 ± 2dB gain at 4–420GHz

28 September 2026

Riber’s first-half revenue grows 19% year-on-year to €12.7m

Growth returns firm to profitability

28 September 2026

Wise Integration’s digital control technology to combine with Navitas’ wide-bandgap technologies

Collaboration to advance performance computing applications for AI PCs, high-end workstations, gaming desktops and industrial systems

25 September 2026

Toshiba launches 3300V SiC MOSFET module

High-surge-current capability helps to improve industrial equipment reliability

25 September 2026

PicoJool raises $27.5m in Series A round led by Socratic Partners, joined by HRT

Funding to accelerate commercialization of 200G, 50G micro-VCSELs, and optical connectivity products for AI infrastructure

24 September 2026

Qorvo achieves key X-band GaN milestone in DARPA THREADS program

Results at end of DARPA THREADS program’s Phase I precedes follow-on work in Phase 2

23 September 2026

VLC Photonics completes transfer of PIC testing and assembly operations to new facility

Phased relocation began with transfer of non-technical teams in November 2025

23 September 2026

BluGlass secures new AUS$8m R&D loan facility, replacing existing AUS$2.27m facility

Extra AUS$5.5m to be used for scaling production and developing lasers for quantum sensing, advanced manufacturing, and defence markets

22 September 2026

Ingantec unveils 20% EQE, 5µm red InGaN micro-LEDs at 625nm

Native c-plane devices demonstrate high luminance and spectral stability at elevated current operations, advancing monolithic RGB technology

22 September 2026

5N+ to expand production facility in St. George, Utah by 50%

Construction to begin in Q3/2026 and complete by second-half 2027

22 September 2026

ams OSRAM unveils 850nm thin-film micro-VCSEL arrays for AI scale-up

ECOC showcasing connectorized multi-core fiber solution and expanding ecosystem network with partner BizLink

Bruker
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News Features
18 September 2026
In-situ dry repair and passivation

ICP mesa treatment reverses size-dependence of blue and green micro-LED EQEs

10 September 2026
TMAH and passivation to boost external quantum efficiency

Efficiency of 1μm LED increased 363% after treatment.

3 September 2026
Towards full-color GaN micro-cavity LEDs

Monolithic device demonstrates 260nm wavelength range, covering almost 70% of visible spectrum

27 August 2026
Thin p-GaN ohmic contact formation

Researchers propose ultrathin magnesium deposition and brief thermal annealing to reduce resistance.

20 August 2026
Weak polarization electric-field c-plane GaN LEDs

Researchers achieve 15% EQE in manufacturable structure.

13 August 2026
Electrochemical GaN HEMT exfoliation

Silicon substrate release method results in less than 2nm roughness of etched surfaces.

Feature Downloads
31 August 2026

Smartphone market falls 4% year-on-year in Q2, driven by memory shortage
Apple and Samsung have grown shipments and market share, while massmarket suppliers shrank, says omdia.

31 August 2026

First experimental demonstration of S-band large-signal performance for GaN HBTs
Selective-area emitter technology and device scaling yield record 30.5GHz fT and 7.01GHz fmax in GaN HBTs, with a first-reported S-band output power density of 16.5kW/cm2

31 August 2026

Power electronics market to grow at 10% CAGR from $25.5bn to $65.2bn by 2036
Silicon carbide will become the dominant power semiconductor material by 2036, reckons IDTechEx.

31 August 2026

KnowMade highlights scaling of GaN-based architectures for strategic markets
Gallium nitride adoption is spanning AI infrastructure, advanced photonics and next-generation power electronics.

31 August 2026

Blue photonic crystal surface-emitting laser
Regrowth-free device achieves 0.066° divergence beam.

31 August 2026

UV LED reaches 19% wall-plug efficiency at 298nm
Researchers at UCSB use p-GaN islands to enhance light extraction.

31 August 2026

Gate-all-around InGaN nano-LED
Vertical integration of an FET with a nanopillar LED enables electrical modulation of sidewall recombination and transistor operation.

31 August 2026

Why the UK Government reshuffle matters for compound semiconductor manufacturers
Howard Rupprecht, managing director of CSconnected, on what July’s UK Cabinet reshuffle means for compound semiconductor manufacturers across the UK and beyond, and why South Wales is a central global asset to UK sovereign capability in this critical sector.