14 July 2020

Mitsubishi Electric develops GaN PA module for 5G base-stations

Surface-mount matching circuit shrinks size and boosts power efficiency

13 July 2020

Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

9 July 2020

SweGaN expands to larger HQ

150mm GaN-on-SiC epi added for RF & high-power switching devices

9 July 2020

GaN-on-Si firm ALLOS sells high-power electronics and RF business to AZUR

ALLOS focusing opto business on micro-LED display market

9 July 2020
Room-temperature continuous-wave 1.55μm quantum dash laser diodes on silicon
Researchers claim first such devices grown by metal-organic chemical vapor deposition.
8 July 2020

ROHM and LEADRIVE open joint lab in Shanghai

SiC-based EV power modules and inverters to be co-developed

8 July 2020

BluGlass wins AMGC grant to develop large-scale plasma deposition source

Collaborations with AKELA Laser and Objective 3D to complete project

8 July 2020

SMART Photonics’ Series C round raises €35m

Funds to expand fab capacity and speed photonic integration development

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News Features
3 July 2020
Improving aluminium nitride nucleation and regrowth on sapphire
Researchers use ultra-high-temperature annealing to boost crystal quality with a view to power switching electronics.
26 June 2020
Carrier-localization engineering for deep-ultraviolet light-emitting diodes
Researchers use self-assembled sidewall quantum well structures to boost light output power and quantum efficiency of III-nitride material on sapphire.
19 June 2020
Boosting mobility in indium aluminium gallium nitride barrier heterostructure
Researchers claim first high-electron-mobility transistor performance, using gallium nitride interlayer to improve material quality.
12 June 2020
Baking and plasma-enhanced low-temperature gallium nitride atomic layer deposition
Sapphire substrate pretreatment enables single-crystal nucleation at 350°C with reduced impact of thermal expansion mismatch.
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Feature Downloads
14 July 2020

II-VI relying on GE’s IP to conquer power SiC markets
The patent deal should promote the adoption of planar SiC MOSFET technology, reckons patent and technology intelligence firm Knowmade.

14 July 2020

GaN and SiC power semiconductor markets to surpass $1bn in 2021
The gallium nitride & silicon carbide power semiconductor market is being energized by demand from electric vehicles, power supplies and PV inverters, says Omdia.

14 July 2020

Increasing wet etch rate in gallium nitride by thermal enhancement
Researchers have achieved 25nm/minute etching speed using contactless photo-electrochemical etch with sulfate radical oxidation and UV exposure.

14 July 2020

GaAs wafer market growing at 10% CAGR to more than $348m by 2025
VCSELs and micro-LEDs will drive the gallium arsenide wafer market for the next five years, forecasts Yole Développement.

14 July 2020

Continuous-wave lasing from InGaN microdisk laser diodes on silicon
Researchers in China have reduced the serial resistance and optical loss in a p-type cladding superlattice by lowering the carbon concentration.

14 July 2020

Optical transceiver market to more than double to $17.7bn by 2025
The COVID-19 pandemic is affecting telecoms globally, negatively impacting transceiver module sales in 2020, says Yole Développement.

14 July 2020

Room-temperature continuous-wave 1.55μm quantum dash laser diodes on silicon
HKUST has claimed the first electrically pumped room-temperature CW lasing of 1.55μm QDash lasers grown on patterned on-axis (001) silicon by MOCVD.

14 July 2020

Lower thresholds for InAs quantum dash laser on silicon
HKUST has used a range of defect reduction strategies to improve the potential for 1.3μm- and 1.5μm-wavelength optoelectronics platforms.