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May/June 2020

Excitonic complexes in 2D semiconductors exploited to achieve optical gain

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Green VCSEL enabled by curved mirror process

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High-index-contrast gratings for III-nitride vertical-cavity surface-emitting laser diodes

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Seeking lower-cost non- and semi-polar gallium nitride light-emitters

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Eta Research demonstrates GaN-on-GaN epitaxy of vertical power device structures

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GaN RF market growing at 12% CAGR to $2bn in 2025

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Dual-layer silicon nitride for threshold engineering gallium nitride transistors

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Smartphone production falls 10% year-on-year in Q1 and to fall a record 16.5% in Q2

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April/May 2020

Direct-bandgap emission achieved from hexagonal Ge and SiGe alloys

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Indium tin oxide as cladding for more efficient green laser diodes

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Micro-scaling of indium gallium nitride blue and green light-emitting diodes

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Enabling cost-competitive mass production of micro-LED displays

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Room-temperature bonded GaN/diamond interface improves cooling of HEMTs

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Magnesium thermal diffusion for normally-on gallium nitride transistors

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Boosting output power in aluminium gallium nitridechannel transistors

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Barium titanate and aluminium gallium nitride power electronics

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March 2020

Monolithic indium arsenide quantum dot avalanche photodiode on silicon

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III-V photodetectors integrated with SOI transistors

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3D imaging and sensing market growing at 20% CAGR to $15bn in 2025

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Indium phosphide buffers on silicon for III–V laser diodes and data photonics

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Aluminium gallium nitride on silicon carbide for UV light-emitting diodes

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GaN-on-silicon platform for low-cost high-power electronics

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TSMC’s GaN-on-Si patents supporting ST’s strategic move towards power GaN adoption in automotive use

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Growing ε polytype gallium oxide with gallium nitride

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PiTrans project results in AlScN-based SAW resonators for smartphones

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February 2020

Adding indium selenide to prospects for 2D electronics

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Wide-bandgap nextgeneration semiconductor performance moving beyond standard technology

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Developing complementary p-channel transistors for GaN-on-silicon power

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Imec demos scalable III–V and III–N devices on silicon, targeting beyond-5G RF front-end modules

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Epitaxy equipment market to grow from $940m to over $6bn by 2025, driven by VCSEL and disruptive LED devices

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Thermal droop in InGaN LEDs

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Monolithic InGaN white LED

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Enhancing AlGaN hole injection with germaniumdoped tunnel junctions

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Patterned sapphire silica substrate for ultraviolet LEDs

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Dec/Jan 2020

Trends toward low-cost, high-power, high-frequency devices on silicon and more

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Self-aligned-gate gallium oxide metal-oxide-semiconductor transistors

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Hydrogen-terminated diamond transistors on gallium nitride/silicon

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Fujitsu grows diamond film to boost heat dissipation efficiency of GaN HEMT

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Record power-density AlGaN barrier transistors

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Monolithic optoelectronic integration of gallium nitride transistor

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Toward photodetector arrays based on indium gallium nitride micro-LEDs

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GaAs photodetector on thin germanium-on-silicon virtual substrate

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NREL demos first growth of AlInP and AlGaInP by HVPE

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Nov/Dec 2019

Aluminium gallium nitride enables deep ultraviolet laser diodes

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Indium phosphide template for laser and silicon-on-insulator integration

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SiC 600V transistors comparable to silicon

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Fraunhofer IAF claims first MOCVD production of AlScN layers for transistors

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High-carrier-density two-dimensional hole gas in strained gallium nitride

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Boost to magnesium doping of GaN on freestanding substrates

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InGaN surface-emitting superluminescent LEDs

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October 2019

Monolithic AC InGaN light-emitting chips

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Improving white LED luminous efficiency CRI

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Micro-LED technologies make significant progress over last 18 months

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Implementing III–nitride light-emitting devices on silicon substrates

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High-frequency InAlN barrier transistors on silicon

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Gadolinium oxide gate insulation for gallium nitride channel transistors

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Indium gallium arsenide one-transistor dynamic random access memory

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Vertical gallium oxide Schottky barrier diodes with improved performance

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SEPTEMBER 2019

III-nitride superluminescent diodes on silicon for displays and communications

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Metal nanoparticle plasmon push for III-nitride light-emitting diodes

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Reduced contact resistance aluminium gallium nitride channel power devices

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Ferroelectric gate stack for normally-off gallium nitride power transistors

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Increasing on-current in III–V transistors on silicon

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Thermal atomic layer etching of III-arsenide semiconductors

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Wafer-level backside processing of high-frequency indium phosphide chips

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