Honeywell
12 February 2026

UK–Bulgaria collaboration developing Green Silicon Carbide wafer factory

Co-operation boosting innovation, investment and skills, strengthening supply chains, and supporting Bulgaria’s tech sector

11 February 2026

HexaTech launches 3”-diameter aluminium nitride substrate

Expansion from 2-inch a step towards high-volume production of high-voltage and high-frequency electronic devices on 100mm AlN

11 February 2026

Renesas licenses EPC’s low-voltage eGaN technology to complement its 650V+ portfolio

Renesas to second-source EPC GaN devices, as firms collaborate on internal wafer fabrication capabilities

10 February 2026
Continuous-wave AlGaN UV-A laser diode
OSU researchers report record-low 6kA/cm2 threshold current density at 360nm wavelength.
9 February 2026

Lumentum’s quarterly revenue grows 65% year-on-year to $665.5m

Record pump laser, EML chip and transceiver revenues drive growth

9 February 2026

Veeco stockholders approve merger with Axcelis

Merger expected to be completed in second-half 2026

9 February 2026

Texas Semiconductor Innovation Fund grants Coherent $14m to accelerate scaled production of InP wafers

Firm’s $154m investment establishing first 6-inch indium phosphide fab

6 February 2026

KAIST-led team develops high-efficiency, ultra-high-resolution red micro-LED display

Monolithic 3D-integrated red micro-LED display on silicon uses AlInP/GaInP epilayers to achieve 1700PPI

6 February 2026

Vexlum raises €10m to scale VECSEL laser manufacturing

Funding to accelerate adoption in quantum, semiconductor and space sectors

5 February 2026

Ascent Solar developing CIGS PV modules generating multiple times more power for space beaming

Firm to present program results at space industry conferences later this year

5 February 2026

Skyworks’ continuing revenue growth in Broad Markets counteracts seasonal decline in Mobile

December-quarter revenue, gross margin and non-GAAP earnings all exceed forecast

4 February 2026

Supra launches to secure US supply of gallium, scandium and other critical minerals

UT Austin spinout developing proprietary platform to recover critical minerals from waste streams

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News Features
2 February 2026
Distributed polarization-doped green laser diodes
Including a doped electron-blocking layer reduces laser threshold and increases slope efficiency.
26 January 2026
Increasing 2DEG density with aluminium nitride barriers
Researchers claim 1.3x1014cm2 record for AlN/GaN structures.
16 January 2026
Reducing wafer bow in GaN-on-QST growth
Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.
8 January 2026
Metal-modulated cubic GaN epitaxy
Process enables improved morphology and phase purity in red-light-emitting samples.
18 December 2025
Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.
11 December 2025
Patterning GaN for improved red LEDs
Square 300µm template region enhances LED external quantum efficiency by 57%.
Feature Downloads
19 January 2026

IDTechEx assesses the status of 800V for EV power electronics
IDTechEx analyses the adoption of silicon carbide and gallium nitride.

19 January 2026

Power SiC faces overcapacity downturn until 2027–2028, before device market grows to nearly $10bn by 2030
In 2025, utilization rates in the silicon carbide supply chain are down to about 50% for upstream processing and 70% for device processing, reckons Yole.

19 January 2026

Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.

19 January 2026

Far-UVC LEDs on c-plane sapphire
Devices with a 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.

19 January 2026

Patterning gallium nitride for improved red LEDs
A square 300μm-square patterned template region is found to enhance red LED external quantum efficiency by 57%.

19 January 2026

Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report benefits for both efficiency and power.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.