30 November 2022
GeSn resonant-cavity LEDs
Mid-infrared-emitting devices with lateral p-i-n structure could enhance optoelectronic silicon-on-insulator platform.
30 November 2022
Indium phosphide industry moving into consumer applications
Ali Jaffal of Yole Intelligence outlines how the indium phosphide market is evolving, including challenging gallium arsenide.
30 November 2022
Room-temperature CW InGaAs 980nm laser diodes on on-axis silicon
Progress towards light emitters directly integrated on a silicon OEIC platform.
30 November 2022
Pocketing benefits for QD lasers on 300mm silicon
Researchers at UCSB claim the first electrically pumped in-pocket MBE 1300nm laser diodes with continuous-wave operation to 60°C.
30 November 2022
Optically pumped yellow InGaN edge-emitting laser
A stepping stone towards electrical pumping shows material quality that is competent for future development.
30 November 2022
Boron nitride pulsed laser deposition
Ultrawide bandgap could lead to optoelectronic and high-power applications.
30 November 2022
First inverted gallium oxide DI-MOS transistor
Novel Crystal Technology has reported a β-Ga2O3 inverted double-implanted MOS transistor that achieves 1kV breakdown voltage and 6V threshold voltage.
30 November 2022
InGaAs biristor for high-density DRAM
Researchers demonstrate device with high reliability, scalability and endurance with 3D prospects.
