Honeywell
7 October 2026

China comprises majority of new RF GaN patent families in Q2/2026, says KnowMade

Latest RF GaN Technology Patent Monitor finds over 30 new entrants, mostly Chinese

7 October 2026
Monolithic III-N complementary logic

Researchers claim record 154.1V/V maximum voltage gain, 10.4ns/stage RO delay, and first 6T-SRAM.

7 October 2026

Power GaN patenting in Q2/2026 led by industrial assignees, reports KnowMade

Chinese universities maintained strong presence in GaN power device innovation

7 October 2026

Mivium demonstrates commercially viable production of phase-pure h-GaN nanoparticles

GaN thin-film deposition from proprietary submicron powder platform also being developed

7 October 2026

Navitas completes acquisition of Claros, extending AI infrastructure power delivery portfolio from grid to xPU

Integrated voltage regulator technology enables vertical and embedded architectures

6 October 2026

Skyworks completes combination with Qorvo

Expanded technology portfolio spans RF, power management, and analog and mixed-signal

6 October 2026

Renesas adds first 100V E-mode FETs to low-voltage GaN portfolio

New power transistor family delivers up to 35% lower hard-switching and 63% lower soft-switching figures-of-merit

6 October 2026

SawStreet joins WIN Alliance Partner Program

Backend specialist provides additional US source for wafer grinding, thinning, dicing, pick-and-place and die inspection

6 October 2026

Greece’s METLEN signs second long-term commercial gallium supply agreement

Japanese chemical customer to take 16% of scheduled annual production starting Q3/2027

5 October 2026

Navitas and Microchip collaborate on 800V reference design for AI data centers

Digital power control, GaN technology and hardware-based security combined to accelerate development of high-efficiency rack power systems based on 800V DC OCP standard

5 October 2026

Cardiff Capital Region’s £160m 10-year Investment Zone program moving into delivery

Program to build on South-East Wales’ compound semiconductor cluster

5 October 2026

Far-UVC LEDs transmit data at record speed of 1.5Gbps

FBH-developed far-UVC LEDs used by universities of Strathclyde and Cambridge to build and test optical wireless communication system

Bruker
CS Clean
Vistec
Honeywell On-demand Webcast
News Features
1 October 2026
Intrinsic polarization superjunctions

Lateral iPSJ diodes and transistors achieve highest VBR among reported GaN-on-Si devices.

18 September 2026
In-situ dry repair and passivation

ICP mesa treatment reverses size-dependence of blue and green micro-LED EQEs

10 September 2026
TMAH and passivation to boost external quantum efficiency

Efficiency of 1μm LED increased 363% after treatment.

3 September 2026
Towards full-color GaN micro-cavity LEDs

Monolithic device demonstrates 260nm wavelength range, covering almost 70% of visible spectrum

27 August 2026
Thin p-GaN ohmic contact formation

Researchers propose ultrathin magnesium deposition and brief thermal annealing to reduce resistance.

20 August 2026
Weak polarization electric-field c-plane GaN LEDs

Researchers achieve 15% EQE in manufacturable structure.

Feature Downloads
30 September 2026

Power GaN device market growing at 35% CAGR to $3.5bn in 2031, driven by data centers, EVs and industrial systems
From charging to AI: power GaN devices are entering a broader, multi-market adoption cycle, says Yole.

30 September 2026

Jilin University achieves record 2DEG mobility for N-polar GaN/AlGaN heterostructures on SiC
Reducing high-resistance GaN template MOCVD growth temperature increases carbon incorporation and reduces oxygen concentration

30 September 2026

GaN HEMT short-circuit performance
Device achieves record 629μs withstanding time.

30 September 2026

RF GaN patenting activity slowing as technology matures
…but intensifying in selected segments and regions, says KnowMade.

30 September 2026

Weak polarization electricfield c-plane GaN LEDs
Researchers achieve 15% external quantum efficiency in a manufacturable structure.

30 September 2026

Reducing micro-LED sidewall impact
Neutral reactive N/H treatment increases EQE in 5μm GaN device by 34%.

30 September 2026

First continuous-wave UV VCSEL operation at room temperature
A new device design benefits from reduced optical losses and improved thermal dissipation.

30 September 2026

More thermally stable InP quantum dot near-infrared laser diodes
Researchers achieve a high T0 characteristic temperature of 125K at 780nm.