Honeywell
22 May 2026

Texas Tech receives $4.5m TSIF grant for wide/ultrawide-bandgap R&D

Three-year project to develop UWBG semiconductors for high-power/high-frequency electronics and optoelectronics

22 May 2026

Wolfspeed introduces 3.3kV SiC power modules in two industry-standard footprints

High-power half-bridge baseplate and scalable full-bridge baseplate-less modules target AI data centers and energy infrastructure

22 May 2026

Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers

QDPAK top-side-cooled package supports high power density and low power loss in 800V HVDC architectures

22 May 2026

Infineon-led European project Moore4Power launches

‘More than Moore for Disruptive Innovations in Power Electronics’ to combine silicon, SiC and GaN with sensing, control and communication functions in heterogeneously integrated system

22 May 2026

BluGlass achieves record 1.9W peak output for single-mode GaN laser

450nm single-mode GaN laser combined with proprietary gain-chip technology

21 May 2026
Sidewall gating of GaN HEMTs
Structure gives highest enhancement-mode threshold of +4V.
21 May 2026
Nanopillar GaN LED arrays for VR and AR
Researchers fabricate 6336PPI devices with view to future near-eye applications
21 May 2026

Metallium awarded $1m Phase II SBIR contract for recovery of gallium and germanium from electronic waste

Grant to support pilot-scale development and scale-up of Flash Joule Heating technology

21 May 2026

Ocampo family establishes $100m fund to advance university research in RF, microwave and photonics engineering

Donations to support industry innovation, academic excellence, and the next generation of semiconductor pioneers

20 May 2026

Lumentum orders multiple Aixtron G10-AsP MOCVD systems

Systems to support expansion of high-speed optical solutions for AI networks

20 May 2026

EPC and Mouser announce global distribution deal

Mouser to distribute EPC’s latest GaN devices for high-efficiency power designs

19 May 2026

NoMIS Power joins ARPA-E DC-GRIDS consortium

SUNY Poly spin-off supplying 3.3kV SiC MOSFETs for HVDC submodules

Bruker
CS Clean
Vistec
Honeywell On-demand Webcast
News Features
14 May 2026
Red InGaN micro-LEDs with narrow FWHM and high EQE
Researchers use photonic crystal structure to achieve 5nm linewidth and 12% efficiency.
17 April 2026
Silicon aluminium nitride on GaN MISHEMTs for 6G and X-band
Fujitsu device achieves 74.3% power-added efficiency and 10.4W/mm Pout.
17 April 2026
Nano-ridge surface-emitting lasers on 300mm silicon
First demonstration uses one-dimensional photonic crystal concept.
26 March 2026
Single- and multi-channel AlScN barriers
GaN channel heterostructures achieve a record 45Ω/□ sheet resistance.
26 March 2026
Micro-disk and micro-ring blue laser diodes
Continuous wave electrically pumped devices achieve Q factors up to 17,066, a claimed record.
9 March 2026
Induced fit Ga- semiconductor growth
Technique could enable optoelectronics on various rigid and flexible substrates.
Feature Downloads
1 May 2026

Single- and multi-channel AlScN barriers
GaN channel heterostructures achieve a record 45Ω/□ sheet resistance.

1 May 2026

Silicon aluminium nitride on GaN MISHEMTs for 6G and X-band
Fujitsu device achieves 74.3% power-added efficiency and 10.4W/mm Pout.

1 May 2026

Power electronics market to grow at 10% CAGR to over $65bn by 2036
Wide-bandgap semiconductors are supporting higher-voltage operation and new power architectures across data centers, EVs and renewables, notes IDTechEx.

1 May 2026

Red InGaN micro-LEDs with narrow FWHM and high EQE
Researchers use a photonic crystal structure to achieve 5nm linewidth and 12% external quantum efficiency.

1 May 2026

Micro-LED transfer via electrochemical etch
UCSB researchers transfer arrays of devices down to 3μm onto silicon.

1 May 2026

Nano-ridge surface-emitting lasers on 300mm silicon
First demonstration uses one-dimensional photonic crystal concept.

31 March 2026

ALP-4-SiC project focusing on atomic layer processing for silicon carbide-based quantum photonic circuits
Max Planck Institute is designing and characterizing photonic components while Fraunhofer IISB contributes SiC technology.

31 March 2026

Compound semiconductor materials market growing at 14% CAGR to almost $5.2bn by 2031
Yole highlights a sustained structural growth phase as compound semiconductor materials are becoming core to power electronics, photonics and AI infrastructure.