HoribaHoriba
13 December 2024

Bosch allocated $225m in US CHIPS Act funding, plus $350m in loans

Funds to support $1.9bn transformation of Roseville fab for SiC power device production

13 December 2024

AIXTRON Innovation Center opened by North Rhine-Westphalia’s Minister for Economic Affairs

First 300mm GaN prototype systems already integrated into pilot lines at several customers

13 December 2024
Red InGaN LEDs on scandium aluminium magnesium
Alternative substrate could enable future development of full-color displays.
12 December 2024

Penn State gains $3m DARPA grant for GaN-on-silicon project with Northrop Grumman

2D materials to be seed layers for heterogeneous integration of GaN on industry-compatible silicon (001)

12 December 2024

Ayar Labs raises $155m in Series D funding round led by Advent Global Opportunities and Light Street Capital

Funds to accelerate high-volume manufacturing of in-package optical interconnects for AI infrastructure

11 December 2024

Semiconductor laser market growing at 9% CAGR to over $5bn in 2029

Telecom & infrastructure segment growing at 18% to over $2.5bn, as consumer applications grow just 1% to $1.75bn

10 December 2024

ROHM and TSMC collaborating on development and volume production of GaN power devices for EVs

Partnership to integrate ROHM’s device development with TSMC’s GaN-on-Si process technology

10 December 2024

onsemi acquiring Qorvo’s United Silicon Carbide subsidiary and SiC JFET technology for $115m

Acquisition to enhance power portfolio for AI data centers, expanding market opportunity by $1.3bn within five years

9 December 2024

Imec integrates InP chiplet on 300mm RF silicon interposer, yielding 0.1dB insertion loss at 140GHz

RF silicon interposer technology used to combine III–V chiplets with silicon-based wafer-scale packaging for cost-effective mmWave communication and sensing

9 December 2024

Coherent, SkyWater and X-Fab all agree preliminary terms for US CHIPS Act funding

Funding to enhance InP, silicon and SiC production in Minnesota and Texas

6 December 2024

VisIC and AVL partner on GaN inverters for EVs

Test achieves efficiencies of 99.6% at 10kHz and 99.8% at 5kHz

5 December 2024
Graded barriers bandwidth boost for micro-LEDs on silicon
Devices achieve 580MHz f−3dB at 2000A/cm2.
Bruker
AFC Industries
Vistec
Pfeiffer Vacuum
ETA Research
News Features
28 November 2024
Indium phosphide laser on silicon nitride photonic circuit
Micro-transfer printing integration achieves wavelength tuning over 54nm in the C and L bands.
22 November 2024
MESFETs on single crystal aluminium nitride substrate
Devices reach 2kV breakdown performance with short 15µm gate–drain distance.
14 November 2024
Boron enables AlN on silicon growth without cracks
Researchers process AlN layers with low dislocation density.
7 November 2024
Double-heterostructure gallium nitride for 5G FR2 mobile handsets
HEMT achieves record saturated output power for low-voltage handset application.
30 October 2024
Deep UV micro-LED display photolithography
Researchers claim record high 5.7% external quantum efficiency for 270nm wavelength LEDs.
24 October 2024
Ultra-high-brightness green InGaN LEDs on silicon
Low dislocation epilayers enable high-definition micro-displays.
Feature Downloads
31 October 2024

High-current vertical diamond MOSFETs
Researchers achieve drain currents above 1A by connecting two devices.

31 October 2024

Planned 8-inch silicon carbide wafer fabs worldwide reach 14
ST, Onsemi, Infineon, Wolfspeed, ROHM, BOSCH, Fuji Electric, Mitsubishi Electric, VIS/EPISIL, Silan, UNT and FT1 all plan SiC plants, notes TrendForce.

31 October 2024

Transfer-printed lasers on silicon photonics
Ireland’s Tyndall National Institute and Intel have improved alignment by fabricating InP lasers after, rather than before, transfer printing to SOI waveguides.

31 October 2024

DBR-free thin-film InGaN VCSELs
Device achieves lasing without lateral confinement under optical pumping.

31 October 2024

Micro-LEDs on freestanding GaN
An optimized InGaN multi quantum well structure has increased the external quantum efficiency from 7.9% to 14.8% at 10A/cm2 injection current.

31 October 2024

Micro-LEDs maintain momentum despite Apple’s withdrawal
New advances are needed in die technology, transfer equipment and micro-LED manufacturing, says Yole Développement.

31 October 2024

Defect-free AlGaInP native red micro-LEDs by wet chemical etching
Mike (M.C.) Yoo, CEO of Verticle Inc, highlights how undercut-free wet etching is ready for the mass production of phosphide-based micro-LEDs.

9 October 2024

Red/yellow InGaN micro-LED photodetectors for visual light communications
Researchers demonstrate high-data-rate reception from white LED transmitters.