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27 February 2026

UCSB’s James Buckwalter inducted as senior member of the US National Academy of Inventors

Honored for work on high-speed and high-frequency ICs integrating CMOS with III-Vs

27 February 2026

ROHM licenses TSMC’s GaN processs technology for Hamamatsu fab

End-to-end, in-house production from 2027 to meet demand for applications such as AI servers and EVs

26 February 2026
GaN-on-silicon HEMTs for millimeter-wave 5G
Devices at 30GHz reach more than 60% power-added efficiency with 1.1dB NFmin noise figure
26 February 2026

CSconnected announces £1m final call for Supply Chain Development Programme

Online webinar on 11 March precedes application deadline of 17 April

25 February 2026

First Solar licenses Oxford PV’s patents for US markets

Agreement advances First Solar’s next-gen perovskite device development

25 February 2026

Ascent Solar’s PV blankets to power NOVI AI N-1 ATLAS spacecraft

Hyperspectral imaging spacecraft to launch this spring

24 February 2026

UV LED prices rising by 5% in Q1 due to increased material and labor costs

Full-year market to grow by 10% to $215m in 2026

24 February 2026

Compound semiconductor materials market growing at 14% CAGR to almost $5.2bn by 2031

New growth phase as compound semiconductor materials becoming core to power electronics, photonics, and AI infrastructure

24 February 2026

BluGlass secures A$190,000 order from TOPTICA for custom GaN visible lasers

Order supports development of Quantum Ultra-broadband Photonic Integrated Circuits and Systems

19 February 2026
Ultraviolet superluminescent diodes
First device report reaches 8mW optical output and 7.6% EQE in CW operation.
19 February 2026

Luminus leverages APC partnership to enhance energy-efficient LED lighting solutions

LEDs combine with SiC power semiconductors to yield energy savings and system efficiency

19 February 2026

Photon Bridge demos >30mW laser output per color at wafer scale on silicon photonics

Cost-effective wafer-scale manufacturing validated for next-gen CPO architectures

Bruker
CS Clean
Vistec
Honeywell On-demand Webcast
News Features
10 February 2026
Continuous-wave AlGaN UV-A laser diode
OSU researchers report record-low 6kA/cm2 threshold current density at 360nm wavelength.
2 February 2026
Distributed polarization-doped green laser diodes
Including a doped electron-blocking layer reduces laser threshold and increases slope efficiency.
26 January 2026
Increasing 2DEG density with aluminium nitride barriers
Researchers claim 1.3x1014cm2 record for AlN/GaN structures.
16 January 2026
Reducing wafer bow in GaN-on-QST growth
Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.
8 January 2026
Metal-modulated cubic GaN epitaxy
Process enables improved morphology and phase purity in red-light-emitting samples.
18 December 2025
Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.
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Feature Downloads
19 January 2026

IDTechEx assesses the status of 800V for EV power electronics
IDTechEx analyses the adoption of silicon carbide and gallium nitride.

19 January 2026

Power SiC faces overcapacity downturn until 2027–2028, before device market grows to nearly $10bn by 2030
In 2025, utilization rates in the silicon carbide supply chain are down to about 50% for upstream processing and 70% for device processing, reckons Yole.

19 January 2026

Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.

19 January 2026

Far-UVC LEDs on c-plane sapphire
Devices with a 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.

19 January 2026

Patterning gallium nitride for improved red LEDs
A square 300μm-square patterned template region is found to enhance red LED external quantum efficiency by 57%.

19 January 2026

Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report benefits for both efficiency and power.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.

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