Honeywell
16 October 2026

Power Integrations and Ideal Power collaborate on efficient, always-on solid-state circuit breakers

Combining 1700V InnoMux-2 ICs with B-TRAN switches for protection, control and power conversion in 800VDC AI data center infrastructure

16 October 2026

Smartphone shipments shrink 20% in Q3/2026 as memory crisis reshapes competition

Samsung and Apple collectively rise to 45% share versus mass-market-focused competitors

16 October 2026

GlobalFoundries’ CHIPS Program award amended to support $5bn investment in Malta, NY, and Burlington, VT

$955m reallocated to accelerate investments in silicon photonics, SiGe, and advanced packaging

16 October 2026

Infineon and Wolfspeed expand and extend long-term SiC wafer supply agreement to 200mm

Multi-year deal supports Infineon’s conversion from 150mm to 200mm SiC manufacturing

15 October 2026

XMax to acquire 1200V vertical GaN power semiconductor developer Hexa Creation

Deal gives entry to high-voltage GaN power technology targeting AI data-center power infrastructure

14 October 2026

AVL and VisIC extend collaboration to high-power GaN traction inverter technology

D3GaN power module technology integrated into vehicle demonstrator

14 October 2026

Tower and Semtech expand SiGe partnership to scale power-efficient analog connectivity for data centers

Multi-year deal expands dedicated capacity across Tower’s fab network to support growth in optical and copper interconnects for next-gen AI infrastructure

13 October 2026
InGaN amber nano-LED with 10% external quantum efficiency

Device benefits from enhanced light extraction at 840nm diameter.

13 October 2026

Lumentum, Astera Labs and Corning demo 1060nm VCSEL-based PCIe-over-optics for AI rack-scale connectivity at OCP Global Summit

Smart Fabric Switch, high-density VCSEL optical interconnect platform, and multi-mode fiber connectivity combined

13 October 2026

Navitas collaborates with NVIDIA on 24kW, 800V-to-12V power delivery board for next-gen AI infrastructure

Single stage eliminates 50V IBC power stage, boosting system efficiency and reducing board space

13 October 2026

Polar collaborates with IC-Link by imec on 8-inch manufacturing of e-mode GaN devices

Focus on 40–650V initially, and markets such as 800V-to-12V conversion in data centers in future

8 October 2026

Wolfspeed receives conditional $1.5bn loan commitment from US Department of War

Financing to support domestic development and production of silicon carbide materials and wide-bandgap power devices, with focus on national security

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News Features
7 October 2026
Monolithic III-N complementary logic

Researchers claim record 154.1V/V maximum voltage gain, 10.4ns/stage RO delay, and first 6T-SRAM.

1 October 2026
Intrinsic polarization superjunctions

Lateral iPSJ diodes and transistors achieve highest VBR among reported GaN-on-Si devices.

18 September 2026
In-situ dry repair and passivation

ICP mesa treatment reverses size-dependence of blue and green micro-LED EQEs

10 September 2026
TMAH and passivation to boost external quantum efficiency

Efficiency of 1μm LED increased 363% after treatment.

3 September 2026
Towards full-color GaN micro-cavity LEDs

Monolithic device demonstrates 260nm wavelength range, covering almost 70% of visible spectrum

27 August 2026
Thin p-GaN ohmic contact formation

Researchers propose ultrathin magnesium deposition and brief thermal annealing to reduce resistance.

Feature Downloads
30 September 2026

Power GaN device market growing at 35% CAGR to $3.5bn in 2031, driven by data centers, EVs and industrial systems
From charging to AI: power GaN devices are entering a broader, multi-market adoption cycle, says Yole.

30 September 2026

Jilin University achieves record 2DEG mobility for N-polar GaN/AlGaN heterostructures on SiC
Reducing high-resistance GaN template MOCVD growth temperature increases carbon incorporation and reduces oxygen concentration

30 September 2026

GaN HEMT short-circuit performance
Device achieves record 629μs withstanding time.

30 September 2026

RF GaN patenting activity slowing as technology matures
…but intensifying in selected segments and regions, says KnowMade.

30 September 2026

Weak polarization electricfield c-plane GaN LEDs
Researchers achieve 15% external quantum efficiency in a manufacturable structure.

30 September 2026

Reducing micro-LED sidewall impact
Neutral reactive N/H treatment increases EQE in 5μm GaN device by 34%.

30 September 2026

First continuous-wave UV VCSEL operation at room temperature
A new device design benefits from reduced optical losses and improved thermal dissipation.

30 September 2026

More thermally stable InP quantum dot near-infrared laser diodes
Researchers achieve a high T0 characteristic temperature of 125K at 780nm.