Samsung Foundry Forum & Safe Forum
2 December 2022
Monolithic GaN optoelectronics on silicon
Fabricated device includes transmitter, modulator, waveguide, beam splitter, receivers and monitor
1 December 2022

Transphorm opens GaN application lab in Shenzhen

Greater China as new location increases regional capabilities for APAC power electronics customers

1 December 2022

ROHM and BASiC partner on silicon carbide power devices for automotive applications

Aim is to develop more efficient and reliable SiC power module for new energy vehicles

1 December 2022

ST to qualify Soitec’s silicon carbide substrate technology over next 18 months

ST targets adoption of SmartSiC for future 200mm substrate manufacturing

1 December 2022

Midsummer signs four new LOIs for delivery of extra 224MW of solar panels

Convertible bond issue to fund 20MW new factory in Järfälla then expansion to 200MW

30 November 2022

Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

30 November 2022

Invitalia and Midsummer agree final terms for Italian CIGS PV factory start-up

Grants for €22m to contribute to €57.5m project

25 November 2022

OpenLight makes available PDK for first unified electronic and photonic design platform

Fast, accurate and reliable photonic IC designs with on-chip lasers

24 November 2022
Continuous-wave InGaN microdisk laser diodes on (100)-oriented silicon
Thermal resistance reduced by 32.5% relative to reference on Si(111)
24 November 2022

Kyocera develops smallest GaN laser chip mass produced from silicon substrate

New process creates functioning 100μm-long micro-light sources with higher yield, lower cost

24 November 2022

Ganvix partners with BluGlass to develop green GaN VCSELs

BluGlass’ RPCVD complements Ganvix’s DBR technology

24 November 2022

Scantinel raises €10m in Series A funding from PhotonDelta, Scania and ZEISS

Funds to be used to roll out FMCW LiDAR devices to customers for AVs and industry

Bruker
AFC Industries
Vistec
Pfeiffer Vacuum
Aixtron
News Features
17 November 2022
Ethylene route to semi-insulating free-standing GaN
Researchers claim record high resistivities.
10 November 2022
Very-near-infrared InP QD laser diodes on silicon
Pulsed lasing at ~750nm wavelength up to 95°C.
3 November 2022
Ultra-stable emission from green micro-LEDs on silicon
AlGaN barriers reduce QCSE-related blue-shift
27 October 2022
Pocketing benefits for QD lasers on 300mm silicon
Researchers claim first electrically pumped in-pocket MBE 1300nm laser diodes with CW operation to 60°C.
20 October 2022
RF detection with InGaAs and GaN HEMTs
InGaAs device could probe beyond 1THz, researchers believe.
12 October 2022
Multi-wavelength emission from 3D structured InGaN
Research find spreads up to 90nm with convex microlens shaping.
Feature Downloads
30 November 2022

GeSn resonant-cavity LEDs
Mid-infrared-emitting devices with lateral p-i-n structure could enhance optoelectronic silicon-on-insulator platform.

30 November 2022

Indium phosphide industry moving into consumer applications
Ali Jaffal of Yole Intelligence outlines how the indium phosphide market is evolving, including challenging gallium arsenide.

30 November 2022

Room-temperature CW InGaAs 980nm laser diodes on on-axis silicon
Progress towards light emitters directly integrated on a silicon OEIC platform.

30 November 2022

Pocketing benefits for QD lasers on 300mm silicon
Researchers at UCSB claim the first electrically pumped in-pocket MBE 1300nm laser diodes with continuous-wave operation to 60°C.

30 November 2022

Optically pumped yellow InGaN edge-emitting laser
A stepping stone towards electrical pumping shows material quality that is competent for future development.

30 November 2022

Boron nitride pulsed laser deposition
Ultrawide bandgap could lead to optoelectronic and high-power applications.

30 November 2022

First inverted gallium oxide DI-MOS transistor
Novel Crystal Technology has reported a β-Ga2O3 inverted double-implanted MOS transistor that achieves 1kV breakdown voltage and 6V threshold voltage.

30 November 2022

InGaAs biristor for high-density DRAM
Researchers demonstrate device with high reliability, scalability and endurance with 3D prospects.