30 April 2024
First true ternary near-IR III–V nanowire-lasers
Silicon-transparent wavelengths have been achieved at near to room temperature.
30 April 2024
Triple-lattice photonic crystal laser
Surface-emitting device achieves low threshold and high output power.
30 April 2024
Cascading VCSELs to boost power efficiency
Room-temperature performance comparable with edge-emitting devices.
30 April 2024
Recycling GaN for vertical power device performance
Researchers see potential cost savings for key electric vehicle markets.
30 April 2024
Layer transfer of III–N MEMS via 2D hexagonal boron nitride
Researchers fabricate free-standing structures on silicon micro-cavities.
1 April 2024
UCSB reports first N-polar InAlGaN HEMT
Researchers demonstrate devices with very low 179Ω/square sheet resistance channel.
1 April 2024
Probing InGaN RGB micro-LEDs on silicon
Researchers seek to guide future improvements.
1 April 2024
Green photonic-crystal surface-emitting lasers
Using 2D lattice structures of different refractive index materials to control optical behavior allows greater single-mode, low-divergent beam quality at higher power.