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Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.

February 2020

Adding indium selenide to prospects for 2D electronics

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Wide-bandgap nextgeneration semiconductor performance moving beyond standard technology

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Developing complementary p-channel transistors for GaN-on-silicon power

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Imec demos scalable III–V and III–N devices on silicon, targeting beyond-5G RF front-end modules

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Epitaxy equipment market to grow from $940m to over $6bn by 2025, driven by VCSEL and disruptive LED devices

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Thermal droop in InGaN LEDs

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Monolithic InGaN white LED

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Enhancing AlGaN hole injection with germaniumdoped tunnel junctions

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Patterned sapphire silica substrate for ultraviolet LEDs

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Dec/Jan 2020

Trends toward low-cost, high-power, high-frequency devices on silicon and more

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Self-aligned-gate gallium oxide metal-oxide-semiconductor transistors

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Hydrogen-terminated diamond transistors on gallium nitride/silicon

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Fujitsu grows diamond film to boost heat dissipation efficiency of GaN HEMT

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Record power-density AlGaN barrier transistors

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Monolithic optoelectronic integration of gallium nitride transistor

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Toward photodetector arrays based on indium gallium nitride micro-LEDs

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GaAs photodetector on thin germanium-on-silicon virtual substrate

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NREL demos first growth of AlInP and AlGaInP by HVPE

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Nov/Dec 2019

Aluminium gallium nitride enables deep ultraviolet laser diodes

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Indium phosphide template for laser and silicon-on-insulator integration

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SiC 600V transistors comparable to silicon

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Fraunhofer IAF claims first MOCVD production of AlScN layers for transistors

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High-carrier-density two-dimensional hole gas in strained gallium nitride

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Boost to magnesium doping of GaN on freestanding substrates

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InGaN surface-emitting superluminescent LEDs

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October 2019

Monolithic AC InGaN light-emitting chips

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Improving white LED luminous efficiency CRI

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Micro-LED technologies make significant progress over last 18 months

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Implementing III–nitride light-emitting devices on silicon substrates

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High-frequency InAlN barrier transistors on silicon

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Gadolinium oxide gate insulation for gallium nitride channel transistors

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Indium gallium arsenide one-transistor dynamic random access memory

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Vertical gallium oxide Schottky barrier diodes with improved performance

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SEPTEMBER 2019

III-nitride superluminescent diodes on silicon for displays and communications

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Metal nanoparticle plasmon push for III-nitride light-emitting diodes

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Reduced contact resistance aluminium gallium nitride channel power devices

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Ferroelectric gate stack for normally-off gallium nitride power transistors

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Increasing on-current in III–V transistors on silicon

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Thermal atomic layer etching of III-arsenide semiconductors

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Wafer-level backside processing of high-frequency indium phosphide chips

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