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Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.

Oct 2018

Bragg reflector structures combined within graded buffer for lower-cost, higher-efficiency multi-junction solar cells

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Argon-ion-enhanced room-temperature bonding with low resistance

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Mid-to-long wavelength IR emitters and detectors

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IR light source market to grow at 29% CAGR from $1.8bn in 2018 to $6.5bn in 2023

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Magnetic sensing with GaN high-electron-mobility transistors

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Silicon monoxide gate dielectric for gallium nitride transistors

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Thin gallium nitride on silicon carbide high-power and high-frequency electronics

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Activating buried p-type GaN for power electronics

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Photo-electro-chemical deep trench etching in GaN

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Sep 2018

III-nitride solar cells on h-BN separation layer

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Technology advances paving way for micro-LED cost reduction in high-volume applications

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Atomic-layer sidewall passivation of InGaN μLEDs

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Amber light for zinc tin nitride boost from InGaN wells

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Structures to enhance light extraction in InGaN LEDs

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Advancing InGaN VCSELs

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Integrating capacitors into p-GaN gate transistors on silicon

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Gallium oxide transistors increase breakdown to 1.8kV

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Jul/Aug 2018

Plasmon-enhanced mid-IR photodetection at room temperature

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Hole gas boost for deep UV diode wall-plug efficiency

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Monolithic InP on silicon growth for optoelectronics

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Undoped gallium nitride upper waveguide for reduced laser threshold

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High-material-yield halogenfree vapor phase epitaxy of GaN

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Improving AlGaN transistor channel performance

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Fujitsu triples output power of gallium nitride HEMTs

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Agnitron develops MOCVD capability for 10kV+ β-phase gallium oxide switches

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Speeding oscillation of double heterojunction bipolar transistors

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Jun/Jul 2018

Tokyo Institute of Technology develops n- and p-type copper nitride semiconductor for environmentally friendly thin-film photovoltaics

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NREL develops dual-chamber dynamic HVPE, targeting III–Vs solar cells at $0.20–0.80 per watt

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Room-temperature PL from III-IV-V semiconductor alloys

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Monolithic InP on silicon growth for optoelectronics

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Mechanism unveiled for strain relaxation in (0001)-oriented III-nitride thin films & heterostructures

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Strain engineering higher hole density in N-polar aluminium gallium nitride

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AlInN as interlayer for greenemitting multi-quantum wells

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UCLA develops defect-free boron arsenide as most efficient semiconductor material for thermal management

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GaAs wafer market growing at 15% CAGR to 2023, driven by photonics applications growing at 37%

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NTT and Tokyo Institute of Technology develop IC allowing 100Gbps wireless transmission in 300GHz band

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Expanding the potential of hydride vapor phase epitaxy

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Schottky diodes integrated in vertical GaN transistors on silicon

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SiC power semiconductor market growing at 29% CAGR to $1.4bn in 2023, aided by automotive adoption

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May/Jun 2018

Improving magnesium doping of aluminium gallium nitride

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Near-UV optoelectronic transmitter/receiver system

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Electro-absorption modulators for VCSELs

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Indium arsenide quantum dot laser on silicon from molecular beam epitaxy

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Platform for fully vertical GaN-on-silicon power devices

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Normally-on gallium nitride nanowire transistors with inverted p-channel

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Silicon carbide superjunction Schottky junction diodes

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Ohio State uses modulation doping to demonstrate high electron mobility in gallium oxide

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High-voltage gallium oxide transistors with more than 1kV breakdown

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ZTE denial and the semiconductor supply chain

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Apr/May 2018

Widening the prospects for gallium oxide power electronics

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InAs-channel transistors for millimeter-wave and high-speed applications

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Tunneling to green light emission with improved efficiency performance

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Silicon hole injector for deep ultraviolet AlGaN diodes

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Near-ultraviolet AlGaN laser diode on silicon

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Silicon photonics reaches tipping point, with transceivers shipping in volume

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