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Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.

JULY/AUG 2019

Fraunhofer ISE sets efficiency records for silicon-based monolithic triple-junction solar cells

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UCLA demos first antimonide-based SAM-APDs for x-ray and gamma-ray detection beyond 50keV

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Ultra-low-power LEDs for IoTs and smart dust

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High-power polarized-light vertical-cavity surfaceemitting laser

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Electrically driven germanium-tin verticalcavity surface emitter

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Annealing to tune output wavelength of quantum dot lasers on silicon

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Gallium nitride quantum well HEMTs

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High-electron-mobility III-nitride on 3C SiC template on silicon

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Conductive penetration of aluminium nitride buffers on silicon substrates

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Indium arsenide and gallium antimonide fins on 300mm silicon

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JUNE/JULY 2019

Pushing high-frequency transistor performance above 700GHz

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Split gate improves octagonal-cell silicon carbide MOSFET performance

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Silicon carbide power device market growing at 29% CAGR to $1.93bn in 2024, driven by EV market

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Two-dimensional optoelectronic integration with silicon systems

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Developing a III-nitride-on-Si optoelectronic platform

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Nitrogen-polar GaN current-aperture vertical electron transistor

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Nitrogen-polar performance from gallium-polar growth

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Chromium/aluminium n-electrode for reflection boost of deep-ultraviolet LEDs

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VCSEL market growing at 31% CAGR to $3.7bn in 2024, driven by new smartphone and automotive functionalities

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Laser diode market to grow to $14bn in 2029, with direct-diode lasers contributing $2bn

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MAY/JUNE 2019

InGaN platelets for green and red LEDs

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Boosting near-UV and deep-UV performance of light-emitting diodes

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Distributed feed-back gratings for indium gallium nitride laser diodes

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First demonstration of RF N-polar GaN MISHEMT

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Positive threshold in GaN transistors with p-type aluminium titanium oxide

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GaN transistor power boosted by diamond thermal management

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Imec demos optimized process flows for high-performance Ge-based devices

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APR/MAY 2019

InGaAs quantum well transistors on silicon

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Indium arsenide quantum dot laser diodes on on-axis silicon

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Distributed Bragg reflectors for III-nitride VCSEL structures

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Eliminating waveguide propagation from III–nitride light-emitting diodes

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Gallium-doped zinc oxide transparent conductor for gallium nitride LEDs

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Yellow light-emitting diodes with high wall-plug efficiency

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Fraunhofer IAF enhances functionality of GaN power ICs with integrated sensors

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Power Electronics 2020+ project to grow lattice-matched ScAlN on GaN for transistors with very high voltages and current-carrying capacity

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Aluminium scandium nitride exhibits ferroelectric behavior

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MAR/APR 2019

Micro-LED display market growing at 86.4% CAGR from $272m in 2018 to $21,129m in 2025

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InP wafer market growing at 14% CAGR from $77m in 2018 to $172m in 2024

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High efficiency rates predicted for GaN devices by 2022

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IGaN’s 200mm GaN-on-Si epi to optimize cost in power switching

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Vertical integration of gallium nitride nanowire transistor and light-emitter

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First demonstration of fully vertical gallium nitride transistors on silicon

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Fin structures for aluminium gallium nitride high-power electronics

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Gallium oxide could have low cost in future, reckons NREL technoeconomic analysis

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FEB/MAR 2019

Gallium oxide prospects for high-voltage and high-power electronics

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Octagonal cell topology for high-frequency SiC transistors

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Diamond thermal management boosts output power of InAlGaN transistor

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Selective-area emitter for gallium nitride bipolar transistors

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Lateral graphene/hexagonal boron nitride heterostructures

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Graphene-enabled AlGaN nanopyramid arrays on silicon

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Monolithic indium arsenide antimonide on silicon mid-IR photodetector

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