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Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.

May / June 2017

Direct growth of III-V laser structures on silicon substrates

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Alcohol-based digital etch on arsenide and antimonide III-V semiconductors

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Epitaxial lift-off and wafer bonding for III-V photodetectors on silicon

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Ultraviolet photodetection with gallium nitride nanoflowers on silicon

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Non-polar gallium nitride ultraviolet photodetector on sapphire

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Direct hole injection plugs for InGaN LEDs

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Monolithic amber-green-blue nanopillar LEDs

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Monolithic gallium nitride vertical transistor and light-emitting diode

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Imec develops 200V & 650V dispersion-free normally-off/ E-mode GaN power devices on 200mm silicon

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Apr / May 2017

Getting the best cost and performance out of GaN-on-silicon devices

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Benefits and advantages of silicon carbide power devices over their silicon counterparts

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Towards polarized white light with tunnel junctions and hybrid growth

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Semi-polar InGaN laser diode/ waveguide photodiode combination

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Monolithic III-V transistors and laser diodes integrated on germanium

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Graphene phototransistor promises high-performance optoelectronics

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Mar / Apr 2017

Vertical gallium nitride moves for power electronics

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Gallium nitride on silicon on insulator metalorganic vapor phase epitaxy

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N-polar gallium nitride gives record power density and efficiency at 94GHz

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Bulk aluminium nitride platform for gallium nitride high voltage and power

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Silicon and III-nitride high-voltage monolithic cascode diode

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Bulk GaN substrate market growing at 10% CAGR to $100m in 2022, from 60,000 wafers in 2016

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Gallium nitride quantum dot emission at 232nm deep ultraviolet

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Aluminium indium gallium nitride electron-blocking layers

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Increasing light output power from gallium nitride LEDs with p-trenches

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Improving indium arsenide antimonide nanowire optical quality on silicon

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Feb 2017

Back-reflector for gallium indium nitride arsenide solar cells

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Avalanche photodiode with photomultiplier-like performance

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Light transmission from co-integrated laser and modulator on silicon

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Interface engineering for green indium gallium nitride laser diodes

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Gallium nitride thin-film transistors produced in 200°C process

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Non-polar aluminium gallium nitride from two-way pulsed precursor flow

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Metal-organic vapor phase epitaxy of nitrogen-polar gallium nitride

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Korea’s UNIST fabricates thinnest oxide semiconductor

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Atomic scaling of future electronic materials to lower dimensions

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Understanding graphene–semiconductor Schottky contacts

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Dec / Jan 2017

Persistent photoconductivity in nitride semiconductor UV photodetectors

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Continuous-wave roomtemperature broad-area quantum cascade lasers

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Multi-functional metamorphic buffer for InAs QW laser diodes on indium phosphide

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Heterogeneous integration of 2.3μm DFB laser diodes on silicon photonics

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High-quality AlN grown on nano-patterned sapphire substrates prepared by nano-imprint lithography

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Technical innovations in LEDs and power electronics converging to handle modulelevel thermal management

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Driving deployment of wide-bandgap power devices on 200mm

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GaN – A truly revolutionary semiconductor technology matures

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Normally-off gallium nitride power transistor on (110) silicon

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Crystal orientation and gallium nitride trench MOSFET performance

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Advancing high-frequency and high-power electron device technology

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Single III-V channel structure for complementary MOS transistors

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Black polycrystalline diamond transistors with high breakdown

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November 2016

Three-prong attack to improve quaternary solar cell MBE

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South Korea's Institute for Basic Science develops thinnest photodetector

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Indium phosphide on silicon template for optoelectronics

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Extending interband cascade VCSEL wavelengths to 3.4μm

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China: the future of world trade and the semiconductor industry

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Seeking source of green gap in InGaN light-emitting diodes

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Photo-electro-chemical lift-off of free-standing gallium nitride

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Low-resistance tunnel junction boosts InGaN nanowire LED performance

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Integrating gallium nitride LED with silicon drive transistor

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Silicon carbide technology preferred over traditional silicon technology

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October 2016

InGaN solar cells with positive temperature coefficient

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Two-dimensional GaN with graphene encapsulation

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Electrically driven single-photon emission from atomically thin diodes

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Combatting droop with thick single quantum wells on semi-polar GaN

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Reducing laser diode optical leakage with indium gallium nitride waveguides

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Flip-chip hybrid external-cavity laser array on silicon platform

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Germanium and silicon photonics

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Silicon monoxide passivation for gallium nitride transistors

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GaN power devices market growing at 86% CAGR to $280m in 2021

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Reducing subthreshold swing of gallium arsenide transistors

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Berkeley Lab-led team fabricates transistor with record 1nm-long gate

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September 2016

MIT and Masdar develop photovoltaic 'step cell'

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GaAsP solar cells on silicon with record 12% efficiency

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Wafer reclaim for InGaAlP light emission

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Chemical lift-off of full-wafer gallium nitride with zinc oxide interlayer

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Reducing misfit dislocations in green semi-polar LEDs

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Monolithic band-engineered semi-polar white LED

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InGaN laser diode directly integrated with silicon

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InGaAs laser diode on exact germanium-on-silicon substrate

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Silicon photonics and III-V integration

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Continuous-wave room-temperature InAs quantum cascade laser

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Boosting transconductance in InGaAs finFETs

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Carbon nanotube transistors outperform silicon

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