Nitrogen/oxygen plasma improves p-type MgZnO for zinc oxide UV LEDs

LEDs produced with 35x the intensity of devices produced with nitrogen-only plasma at 20mA.

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Metal-nitride semiconductor avalanche for UV detection

Chinese group produces first MSM APDs on free-standing GaN with 400μm x 400μm effective area.

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Record output for single-chip 262nm mid-UV LED

Crystal IS and US ARL approach power needed for specialized use.

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Deep ultraviolet goes deeper on silicon

Epitaxial lateral overgrowth used to improve the quality of aluminum nitride templates for deep UV LEDs.

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Patterned sapphire for nitride enhancements

In the past few years, patterned sapphire substrates have been used to improve performance of nitride semiconductor light-emitting devices. Mike Cooke reports on some recent developments.

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Wet versus dry etching for sapphire wafers

Imtec Acculine’s Derek Mendes discusses how wet etching of patterned sapphire substrates for GaN LED manufacturing can present cost savings over dry etching that multiply dramatically as throughput and wafer size scales up, even if polishing touch-up work is subsequently performed to increase light extraction efficiency.

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More positive threshold with Al2O3 and m-plane nitride semiconductors

UCSB/Rohm produce HFETs with +3V threshold voltage and on/off ratio of 4 million.

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First Chinese Ka-band nitride semiconductor MMIC

Researchers look to higher frequency of ~30GHz for microwave device construction.

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InGaN/GaN DHBTs achieve cut-off of more than 5GHz

Georgia Tech researchers use graded emitter–base and base–collector to reduce V-defects and band discontinuity.

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Passivated AlInN/GaN HEMT pushes past 200GHz cut-offs

Switzerland-based research characterizes 30nm-gate-length high-electron-mobility transistor with cut-off frequency of 205GHz.

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First room-temperature blue/‘green’ VCSELs with current injection

Nichia has made a VCSEL laser emitting blue light in continuous-wave mode with power output of 0.7mW at an injection current of 11mA.

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Driving forward microLED video displays

Micron-size light-emitting diode arrays based on nitride semiconductors have been developed for displays and light sources for more than a decade. By combining such arrays with silicon CMOS active drive circuits, US researchers have now created microdisplays capable of delivering video images. Mike Cooke reports.

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Reducing LED droop at high current with nitrides

UCSB and Mitsubishi Chemical produce first blue-violet LEDs on (2021) GaN.

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China developing supply chain after its LED sector grows 33.8% in 2010

GaN epi output to surpass AlGaInP epi in 2011, says China’s CCID Consulting.

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Kyoto University makes record current-gain SiC BJTs

Surface recombination and deep-level reduction more than doubles performance of silicon carbide bipolar junction transistors.

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Hot electrons in nitride semiconductors

UCSB demonstrates the first hot-electron transistor in the III-nitride system, promising faster operation through near-ballistic transport.

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Quaternary nitride HEMT with record cut-off frequency

University of Notre Dame and epiwafer maker Kopin have produced an InAlGaN/AlN/GaN transistor with an fT cut-off frequency of 220GHz.

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High-performance 150nm mHEMT on GaAs grown using MOCVD

Highest fT value for 150nm device sets stage for potential high-volume production.

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Si implant enhances AlN spacer HEMT drain current

Japanese researchers achieve maximum current density of 1.3A/mm “competitive with other reported values for AlGaN/AlN/GaN HEMTs”.

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Built-in charge boosts quantum dot solar cell efficiency

US researchers show how delta doping between layers can increase the performance of quantum dot solar cells by up to 50%.

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Short-wavelength quantum cascade lasing without antimony

ETH-Zürich researchers achieve antimony-free Watt-level emission at room temperature at sub-3.6μm wavelengths.

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ZnO particle enhancement to nitride LED light extraction

Spin-coated zinc oxide nanoparticles have been used to boost nitride LED light power output by 39% without raising the forward voltage.

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Nitrogen-polar advantages for longer-wavelength nitride LEDs

Ohio State University uses new N-polar growth model to create 540nm green emitters.

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Piranha gobbles up hysteresis of aluminium oxide–nitride semiconductor interface

The Naval Research Laboratory shows how nitride surface pre-treatment can cut charge traps to almost a quarter for Al2O3 gate insulator.

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Nitride HEMTs grown on CMOS-compatible silicon

Swiss/French collaboration makes devices with cut-off/maximum oscillation frequencies of 70/93GHz.

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AlN barrier enhancements to nitride HEMTs on silicon

France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has published three reports of record performance for nitride semiconductor high-electron-mobility transistors (HEMTs) on silicon just in the last few months. Mike Cooke reports.

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Compound semiconductor industry continues growth

This year’s CS MANTECH event evidenced the continued economic recovery and technical progress in the compound semiconductor manufacturing industry. Mark Telford reports.

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Indirect Auger impact on nitride LED droop

Mike Cooke reports on the theory and experimental support from European research. Meanwhile, a US-Korean collaboration has made some observations on real-life internal quantum efficiency dependence on carrier density that does not fit the simple models generally used.

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Re-grown source–drain III-V MOSFETs demonstrate higher drain current

Tokyo Institute of Technology achieves drain current of 1.3mA/μm for InGaAs CMOS field-effect transistors.

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Nitride HEMTs with record 245GHz cut-off frequency

Oxygen plasma treatment reduces gate leakage current more than 100-fold in GaN-based highelectron-mobility transistor.

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Dynamic improvement for nitride semiconductor power switching

HRL Laboratories reduces dynamic degradation of ON-resistance in 1200V normally-off GaN-on-silicon FET to just 1.2x at 350V.

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Developments in the market for UHP hydrogen purifiers

Long treated as the Cinderella material of semiconductor processing, with limited usage in silicon semiconductor, LCD and GaAs manufacture, hydrogen and in particular ultra-high-purity hydrogen is becoming an increasingly important ingredient in new and high-growth areas of semiconductor processing technologies, says Noel Leeson of Power & Energy Inc.

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Simulating way to improved deep ultraviolet LEDs

Taiwan research suggests that thicker barrier layers at p-type end of multi-quantum-well structure could boost DUV LED power by 45%.

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Sapphire patterning boosts green LED light generation and extraction

Effect of reducing total internal reflection and improving crystal quality gives a 3.4x enhancement in external quantum efficiency, says RPI.

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Stepping up EBL in laser diode internal quantum efficiency

‘Simple yet efficient structural design change’ by Georgia Tech yields reduced threshold and increased slope efficiency.

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UCSB reports N-polar HEMT power density record

UCSB has fabricated an N-polar AlGaN/GaN high-electron-mobility transistor that matches the power density of devices using Ga-polar material on sapphire.

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Tellurium doping opens up tunnel junction for GaInP/GaAs solar cells

Korean researchers develop tellurium as an alternative to silicon for doping to high n-type carrier concentrations in GaAs-based PVs.

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Market trends in GaAs RF ICs

Strategy Analytics summarizes how the gallium arsenide radio-frequency IC market will see $3.7bn of power amplifiers being consumed by 1.7 billion handsets in 2014 as multi-band, multi-mode smartphones drive demand.

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2010: a tremendous year for MOCVD suppliers, but will it continue in 2011?

Ross Young of IMS Research forecasts that, driven by demand from China, emerging solid-state lighting, and continued penetration of LED backlighting, the metal-organic chemical vapor deposition market may exceed 1000 tools in 2011.

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Lateral conduction, substrate-free deep UV nitride semiconductor LEDs

South Carolina demonstrates first lateral-conduction substrate-free flip-chip 276nm LEDs grown on thick-AlN/sapphire templates.

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Liquid phase pushes deep UV LEDs to higher efficiency

Boston University develops MBE process for 273nm LEDs using material with high internal quantum efficiency of 32%.

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NanoLEDs, a new breakthrough for the LED industry

Xavier Hugon and Philippe Gilet of HelioDEL and Patrick Mottier of Leti explain how nanowire-based LEDs can improve LED efficiency and cost reduction for solid-state lighting applications.

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Making III-V contact with silicon substrates

High-speed logic, high-frequency/high-power transistors and photonics systems could benefit from marrying with silicon substrates. One impediment to this is contact formulations that use gold. Researchers are working to find a way to union through gold-free contacts. Mike Cooke reports.

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Back-barrier to InAlN HEMT short-channel effects

MIT and IQE RF have used an AlGaN back-barrier to increase the cut-off frequency of an InAlN HEMT by 8% from 195GHz to 210GHz.

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InGaAs tunnel FET with ON current increased by 61%

University of Texas at Austin uses n-type doping to reduce tunneling width and increase field in InGaAs tunneling field-effect transistors.

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Tantalum-based ohmic contacts for nitride semiconductor transistors

Ohmic contacts developed with resistance as low as 0.06Ω-mm.

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Polarization junctions increase nitride transistor breakdown voltage

University of Sheffield and Japan’s POWDEC demonstrate first polarization junction super HFETs.

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Improving photovoltaic material quality with patterned sapphire

Short-circuit current raised by 26% by growing photovoltaic cells on patterned substrates rather than flat substrates.

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Probing vacuum-deposited copper-zinc-tin-chalcogenide kesterite anneal process

Supplying tin during anneal to block decomposition increases solar cell efficiency.

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Seeking to unlock wide-range potential of nitride photovoltaics

Up to now, nitride semiconductor solar cells have only responded to the high-energy, short-wavelength end of the solar spectrum. Mike Cooke reports on recent attempts to extend this range.

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Exploring droop and wide-well nitride LEDs

Researchers at Taiwan’s Chang Gung University conclude that efficiency droop probably dominated by hole injection problems rather than electron overflow.

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Good grades for reducing nitride LED efficiency droop

Taiwan researchers cut LED efficiency droop from 34% to 4% using graded electron-blocking layer.

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Monolithic InGaAs nanolaser on silicon

University of California at Berkeley is developing a technique that could provide a powerful, new avenue to on-chip nanophotonic devices.

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UCSB demos recordfrequency normally-off nitride transistor

E-mode N-polar GaN MISFETs with 120GHz current-gain cutoff.

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Normally-off nitride transistor with oxide insulated gate

Electrochemical process used to create native oxide from AlGaN.

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Normally-off nitride semiconductor tunneljunction FET with high drive

Schottky source electrode used to achieve 326mA/mm drive current.

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Other articles in this issue include: Taking the a-plane to higher crystal quality. For this and much more, subscribe for free

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Short- and long-reach of new VCSEL applications

New applications beckon for vertical-cavity surface-emitting lasers.

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Ge doping option for gallium nitride on silicon substrates

Germanium used to create n-type conductivity without cracking.

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Light output boosted 116.7% at 20mA over conventional LED

Substrate removal and reflector layer boost red LED output.

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Self-aligned Ni-InGaAs as source–drain for InGaAs MOSFET

Nickel-InGaAs alloy reduces source–drain resistance by 80%.

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Other articles in this issue include: Two-dimensional hole gas with increased density and mobility, Free-standing GaN from lateral overgrowth and chemical etch, and Use of AlGaAs optical confinement/ cladding with InGaAsN. For this and much more, subscribe for free

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SiN raises nitride HEMT breakdown voltage without current collapse

Bilayer approach uses combinations of different SiN films as passivation.

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Corning probes optical losses in nitride laser at wafer level

Corning researchers finds that holes bound to Mg acceptors dominate waveguide loss in blue–green nitride lasers.

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Other articles in this issue include: AlGaN-channel with more than 50% Al achieves 1800V
breakdown voltage, Modified p-type layer increases light output from nitride LED and Taiwan researchers make steps to improve LED output. For this and much more, subscribe for free

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Polarized LED from RPI and Kyma promises more efficient displays

A record polarization intensity ratio of 0.77 has been achieved for top surface emission from >500nm-wavelength AlGaInN LEDs.

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Other articles in this issue include: Singapore researchers create amber light for nitride LEDs, Developing layer transfer for mixing compounds with silicon and Free-standing GaN substrate
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MOCVD automation and fab integration

The LED industry is at a key inflection point, says Aixtron's Dr. Rainer Beccard.

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Trapezoid wells effect reduce LED droop and lower cross-over point

Korean researchers find trapezoidal-well LEDs emit more light than conventional device at 5A/cm2.

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Other articles in this issue include: BeZnCdSe pure-green 545nm laser with threshold current density of 1.7kA/cm2, UCSB achieves CW operation of AlGaN-cladding free nonpolar lasers and Semi-polar light extraction comparable to conventional LEDs. For this and much more, subscribe for free

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Chinese burn into LED market driving MOCVD

Times are good for the two main MOCVD system makers Aixtron and Veeco, reports Dr. Mike Cooke.

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Simulations cast light on CIGS solar cell efficiency puzzle

German researchers find segregation effects/non-uniformity in CIGS stronger in gallium-rich material.

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Unveiling hot-electron over-spill in nitride LEDs

Staircase injector structures used to thermalize electrons, improving light emission performance in InGaN diodes.

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Quantum wells with AlGaN barriers boost blue-green laser light output

UCSB sees pathway to high internal quantum efficiency in green and yellow wavelengths.

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Other articles in this issue include: Texas Tech 'significantly' improves InGaN solar cell performance and Self-organized quantum dots reduce green efficiency droop. For this and much more, subscribe for free

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Nitride superluminescence expands blue-violet capability

Potential applications for high spatial coherence of superluminescent light-emitting diodes (SLEDs) include optical coherence tomography, fiber-optic gyroscopes and speckle-free displays. Mike Cooke reports.

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AlN substrate used to make 260–240nm UV LEDs

Crystal IS reduces threading dislocations in strained active layers by growth on high-quality bulk aluminum nitride substrates.

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Low threshold for m-plane nitride semiconductor lasing

UCSB grows m-plane violet lasers with comparable characteristics to state-of-the-art c-plane lasers.

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InAlN barrier strain used to shift nitride transistor thresholds

Georgia Tech produces normally-off (E-mode) FETs using piezoelectric fields.

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Tohoku and Sony develop first 100W blue-violet ultra-fast pulsed semiconductor laser

High-capacity optical disc storage and nano-fabrication targeted.

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Intel takes further step toward Terabit/s data transmission

III-V/silicon hybrid demonstrates 50Gb/s transmission over fiber.

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Lattice-matched SiGe on GaAs for triple-junction CPV solar cells

Dr. Andrew Johnson and Mr. Robert Harper explain how IQE has demonstrated the first triple-junction PV device with an epitaxial bottom cell grown lattice-matched on a 6" GaAs substrate.

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MANTECH comes full cycle in Portland

Latest developments reported at this year's CS MANTECH.

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Hopes and fears for high-mobility logic

Dr. Mike Cooke looks at the present state of III-V and germanium MOSFETs as possible future logic devices.

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Deep UV LED efficiency reaches 3%

External quantum efficiency of 5% for 255-280nm single-chip LEDs within reach, says Dr. Mike Cooke.

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Large chip improvements to deep-ultraviolet output

SET characterizes large-area 273nm and 247nm LEDs.

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Other articles in this issue include: Multi-story production of optoelectronics from GaAs release. For this and much more, subscribe for free

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