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Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.

Jul/Aug 2018

Plasmon-enhanced mid-IR photodetection at room temperature

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Hole gas boost for deep UV diode wall-plug efficiency

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Monolithic InP on silicon growth for optoelectronics

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Undoped gallium nitride upper waveguide for reduced laser threshold

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High-material-yield halogenfree vapor phase epitaxy of GaN

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Improving AlGaN transistor channel performance

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Fujitsu triples output power of gallium nitride HEMTs

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Agnitron develops MOCVD capability for 10kV+ β-phase gallium oxide switches

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Speeding oscillation of double heterojunction bipolar transistors

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Jun/Jul 2018

Tokyo Institute of Technology develops n- and p-type copper nitride semiconductor for environmentally friendly thin-film photovoltaics

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NREL develops dual-chamber dynamic HVPE, targeting III–Vs solar cells at $0.20–0.80 per watt

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Room-temperature PL from III-IV-V semiconductor alloys

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Monolithic InP on silicon growth for optoelectronics

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Mechanism unveiled for strain relaxation in (0001)-oriented III-nitride thin films & heterostructures

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Strain engineering higher hole density in N-polar aluminium gallium nitride

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AlInN as interlayer for greenemitting multi-quantum wells

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UCLA develops defect-free boron arsenide as most efficient semiconductor material for thermal management

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GaAs wafer market growing at 15% CAGR to 2023, driven by photonics applications growing at 37%

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NTT and Tokyo Institute of Technology develop IC allowing 100Gbps wireless transmission in 300GHz band

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Expanding the potential of hydride vapor phase epitaxy

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Schottky diodes integrated in vertical GaN transistors on silicon

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SiC power semiconductor market growing at 29% CAGR to $1.4bn in 2023, aided by automotive adoption

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May/Jun 2018

Improving magnesium doping of aluminium gallium nitride

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Near-UV optoelectronic transmitter/receiver system

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Electro-absorption modulators for VCSELs

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Indium arsenide quantum dot laser on silicon from molecular beam epitaxy

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Platform for fully vertical GaN-on-silicon power devices

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Normally-on gallium nitride nanowire transistors with inverted p-channel

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Silicon carbide superjunction Schottky junction diodes

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Ohio State uses modulation doping to demonstrate high electron mobility in gallium oxide

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High-voltage gallium oxide transistors with more than 1kV breakdown

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ZTE denial and the semiconductor supply chain

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Apr/May 2018

Widening the prospects for gallium oxide power electronics

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InAs-channel transistors for millimeter-wave and high-speed applications

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Tunneling to green light emission with improved efficiency performance

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Silicon hole injector for deep ultraviolet AlGaN diodes

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Near-ultraviolet AlGaN laser diode on silicon

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Silicon photonics reaches tipping point, with transceivers shipping in volume

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