Partnership to accelerate global photonics innovation by giving firms access to programs for technology development, production, coaching, funding and go-to-market strategies

24 June 2025

CSA Catapult to mobilize new UK Semiconductor Centre

Centre backed by £19m in government funding and to have office site accessible to UK’s semiconductor clusters and international visitors

News Features

12 June 2025

Tracking down sources of efficiency droop

Researchers modify ABC model to extract impacts of Auger–Meitner recombination, charge polarization, and junction temperature.

5 June 2025

Monolithic HEMT-micro-LED integration

Researchers reduce on-resistance by using a simplified fabrication process.

22 May 2025

High-breakdown normally-off gallium oxide transistors

Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.

15 May 2025

Mass production QF-HVPE of GaN-on-GaN system

Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.

8 May 2025

Reducing thresholds for L-band quantum dot laser diodes

Researchers claim record low 69A/cm2 threshold per QD layer

2 May 2025

First post-process diamond on GaN HEMT

Top-side heat extraction an alternate path for thermal management.

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31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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