CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

RSS feeds Headline News
20 June 2019

CSC participates in £9.8m APC-funded UK project ESCAPE

Project to develop end-to-end supply chain for silicon carbide automotive power electronics
20 June 2019

Aixtron partners in UltimateGaN project to make power semiconductors available for broad applications at competitive cost

€48m funding from ECSEL Joint Undertaking supported by EU’s Horizon 2020 program
19 June 2019

MACOM cuts June-quarter revenue guidance from $120-124m to $107-109m

Restructuring to save $50m annually by cutting 20% of workforce and closing seven product development facilities
19 June 2019

Riber licenses LAAS-CNRS’ reflective surface defect and curvature measurement technology

EZ-Curve in-situ control device launched for vacuum thin-film deposition
19 June 2019

Palomar partners with UK’s Electronics and Photonics Innovation Centre

Investing $1m in equipment for demo lab for photonics packaging
13 June 2019
Developing III-nitride-on-silicon optoelectronic platform
Researchers demonstrate a light-emitting diode and photodiode on-chip power monitoring system with the potential for gas and liquid analysis
12 June 2019

Imec demonstrates optimized process flows for high-performance Ge-based devices

GmSAT/SSSAT benchmark improved in n-type FinFETs and p-type gate-all-around devices
12 June 2019

UK’s CSC-led GaNTT consortium awarded £1.3m via the Office for Low Emission Vehicles

Project targets realisation of voltage-scalable 200-600V mass-manufacturable vertical GaN trench FETs
11 June 2019

Cree cuts June-quarter revenue guidance from $263-271m to $245-252m

Soft demand for LED Products plus Huawei export ban also cut EPS guidance from $0.12-0.16 to $0.08-0.12
10 June 2019

Okmetic to double SOI wafer production capacity by second-half 2020 as part of €100m investment program

Expansion a response to rising demand for MEMS and power components
7 June 2019

Newport Wafer Fab completes multi-million-pound refinancing deal to new fund equipment and plant

Restructuring of Welsh Government loans and new asset financing from HSBC
6 June 2019
Split gate improves octagonal-cell silicon carbide MOSFET performance
Reduced capacitance and charge storage figures of merit show first 1.2kV silicon carbide devices with better performance than 600V silicon-based power transistors.
6 June 2019

GlobalFoundries sign long-term agreements for high-volume supply of Soitec’s 300mm SOI wafer

Demand for GF’s RF-SOI, FD-SOI and silicon photonics technology growing for 5G, IoT and data-center applications
5 June 2019

DISCO completes construction of new US head office in Silicon Valley

Relocation from Santa Clara to San Jose to be completed in early July
5 June 2019

Sofradir and ULIS merge as Lynred

Combined cooled and uncooled IR detector firm aims to shorten time-to-market for new products
News Archive
RSS feeds News Features
14 June 2019
Achieving nitrogen-polar performance from gallium-polar growth
Researchers flip light-emitting diode structure using buried tunnel junctions for hole injection.
RSS feeds Other News & Products
19 June 2019

GlobalFoundries’ board gains independent director Dorchak to support pivot to more customer-centric and differentiated technology firm

19 June 2019

II-VI launches high-power collimated laser bars and collimated semi-framed stacks for direct-diode and DPSS lasers

19 June 2019

Lockheed Martin demos LTAMDS radar technology during US Army’s Sense-Off

18 June 2019

Emcore appoints Bruce Grooms to board

13 June 2019

First installation of Midsummer’s new improved integrated solar cell roof

13 June 2019

Seoul Semiconductor files patent lawsuit against second Philips TV display distributor

13 June 2019

Northrop Grumman awarded $958m contract to provide US Marines full-rate production of GaN-based G/ATOR radar systems

12 June 2019

Transphorm awarded $15.9m contract modification to develop US-based production of GaN epi for high-performance RF and mmW electronics

12 June 2019

AquiSense’s PearlAqua Micro UV LED system validated to US-EPA protocols across all five models

11 June 2019

GaN Systems giving presentations and customer demonstrations at Wireless Power Week

11 June 2019

EVG launches HERCULES NIL 300mm fully integrated lithography track system

11 June 2019

Lumileds’ LUXEON IR Domed Asymmetric emitter matches field-of-view to surveillance camera sensors

11 June 2019

EPC and Spirit to provide lot-specific data services for eGaN power devices

10 June 2019

Integra Technologies wins US Air Force contract to accelerate thermally enhanced GaN/SiC readiness

10 June 2019

FBH presenting custom diode lasers and UV LEDs and demonstrating systems for LiDAR & SERDS

10 June 2019

POET cuts losses as revenue grows 17% in Q1

10 June 2019

Luminus launches Pico-COB LEDs with 3.5mm or 4.5mm LES and 675lm or 1255lm output

7 June 2019

Ascent Solar’s Q1/2019 revenue down 43% year-on-year, but losses halved through focusing on high-margin tier-1 specialty PV markets

7 June 2019

Northrop Grumman demonstrates LTAMDS capability to US Army

6 June 2019

II-VI launches 120W pump laser modules with wavelength-stabilized output for ultrafast fiber lasers

News Archive
Advert
RSS feeds Features
4 June 2019

Aluminium scandium nitride exhibits ferroelectric behavior
Researchers claim first demonstration for III–V based semiconductor material.
4 June 2019

InGaAs quantum well transistors on silicon
Researchers claim highest combined radio frequency cut-off parameters on silicon that also outperform silicon CMOS.
4 June 2019

Fraunhofer IAF enhances functionality of GaN power ICs with integrated sensors
Monolithic integration of power components with sensors and control circuit saves space, reduces assembly and improves reliability.
4 June 2019

Yellow light-emitting diodes with high wall-plug efficiency
Researchers use device to create color-mixing module with a 2941K correlated color temperature and a 97.5Ra color-rendering index.
4 June 2019

Gallium-doped zinc oxide transparent conductor for gallium nitride LEDs
Reduced strain in active region increases light output power and reduces forward voltage, improving efficiency.
4 June 2019

Distributed Bragg reflectors for III-nitride VCSEL structures
Mike Cooke reports on recent research in Japan and USA.
Features Archive

Aixtron

Arm Purification

III/V Reclaim advert

AXT advert

LayTec advert

University Wafer

AXT advert

Quantum Clean