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20 June 2019

CSC participates in £9.8m APC-funded UK project ESCAPE

Project to develop end-to-end supply chain for silicon carbide automotive power electronics
20 June 2019

Aixtron partners in UltimateGaN project to make power semiconductors available for broad applications at competitive cost

€48m funding from ECSEL Joint Undertaking supported by EU’s Horizon 2020 program
19 June 2019

MACOM cuts June-quarter revenue guidance from $120-124m to $107-109m

Restructuring to save $50m annually by cutting 20% of workforce and closing seven product development facilities
19 June 2019

Riber licenses LAAS-CNRS’ reflective surface defect and curvature measurement technology

EZ-Curve in-situ control device launched for vacuum thin-film deposition
19 June 2019

Palomar partners with UK’s Electronics and Photonics Innovation Centre

Investing $1m in equipment for demo lab for photonics packaging
13 June 2019
Developing III-nitride-on-silicon optoelectronic platform
Researchers demonstrate a light-emitting diode and photodiode on-chip power monitoring system with the potential for gas and liquid analysis
12 June 2019

Imec demonstrates optimized process flows for high-performance Ge-based devices

GmSAT/SSSAT benchmark improved in n-type FinFETs and p-type gate-all-around devices
12 June 2019

UK’s CSC-led GaNTT consortium awarded £1.3m via the Office for Low Emission Vehicles

Project targets realisation of voltage-scalable 200-600V mass-manufacturable vertical GaN trench FETs
11 June 2019

Cree cuts June-quarter revenue guidance from $263-271m to $245-252m

Soft demand for LED Products plus Huawei export ban also cut EPS guidance from $0.12-0.16 to $0.08-0.12
10 June 2019

Okmetic to double SOI wafer production capacity by second-half 2020 as part of €100m investment program

Expansion a response to rising demand for MEMS and power components
7 June 2019

Newport Wafer Fab completes multi-million-pound refinancing deal to new fund equipment and plant

Restructuring of Welsh Government loans and new asset financing from HSBC
6 June 2019
Split gate improves octagonal-cell silicon carbide MOSFET performance
Reduced capacitance and charge storage figures of merit show first 1.2kV silicon carbide devices with better performance than 600V silicon-based power transistors.
6 June 2019

GlobalFoundries sign long-term agreements for high-volume supply of Soitec’s 300mm SOI wafer

Demand for GF’s RF-SOI, FD-SOI and silicon photonics technology growing for 5G, IoT and data-center applications
5 June 2019

DISCO completes construction of new US head office in Silicon Valley

Relocation from Santa Clara to San Jose to be completed in early July
5 June 2019

Sofradir and ULIS merge as Lynred

Combined cooled and uncooled IR detector firm aims to shorten time-to-market for new products
News Archive
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14 June 2019
Achieving nitrogen-polar performance from gallium-polar growth
Researchers flip light-emitting diode structure using buried tunnel junctions for hole injection.
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4 June 2019

Aluminium scandium nitride exhibits ferroelectric behavior
Researchers claim first demonstration for III–V based semiconductor material.

4 June 2019

InGaAs quantum well transistors on silicon
Researchers claim highest combined radio frequency cut-off parameters on silicon that also outperform silicon CMOS.

4 June 2019

Fraunhofer IAF enhances functionality of GaN power ICs with integrated sensors
Monolithic integration of power components with sensors and control circuit saves space, reduces assembly and improves reliability.

4 June 2019

Yellow light-emitting diodes with high wall-plug efficiency
Researchers use device to create color-mixing module with a 2941K correlated color temperature and a 97.5Ra color-rendering index.

4 June 2019

Gallium-doped zinc oxide transparent conductor for gallium nitride LEDs
Reduced strain in active region increases light output power and reduces forward voltage, improving efficiency.

4 June 2019

Distributed Bragg reflectors for III-nitride VCSEL structures
Mike Cooke reports on recent research in Japan and USA.

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