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30 March 2015
Solar Frontier acquiring 280MW US project pipeline from Gestamp Solar

Gestamp's US operation joins Solar Frontier Americas

27 March 2015
Qorvo boosts optical bandwidth with new 90nm GaAs pHEMT process for next-gen high-frequency amplifiers

Qorvo showcases expanding portfolio of flexible and agile solutions for optical applications

27 March 2015
Qorvo launches family of high-speed infrastructure products for next-gen optical networks

High gain and low power dissipation target long-haul, metro and data-center applications

27 March 2015
Kyma launches 2D MoS2 materials and crystal growth tool product lines

Focus on enhanced deposition uniformity and novel source chemistries

26 March 2015
Finisar announces technology roadmap for next-gen multimode fiber interfaces

New suite of VCSEL-based products for 40-100Gb/s data-center links up to 300m

25 March 2015
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode

Notre Dame claims record breakdown voltage of 1.9kV for lateral AlGaN/GaN Schottky barrier diodes on silicon.

25 March 2015
IQE second-half 2014 revenue up 15% on first-half

VCSEL adoption drives 30% full-year growth in lasers & sensors revenue

25 March 2015
UK awards £17.3m for Cardiff University-based Compound Semiconductor Research Foundation

UKRPIF award plus £12m from Welsh Government to boost IQE partnership

25 March 2015
Imec, Intec and Stanford demo 50GHz Ge waveguide electro-absorption modulator

Next-gen silicon integrated optical interconnects targeted

24 March 2015
ClariPhy launches first integrated CFP2-ACO coherent single-board reference design

200G SoC plus CFP2-ACO slot supporting pluggable transceivers enable Terabit line-cards

24 March 2015
SFCE to acquire 51% stake in Lattice Power

Chinese GaN-on-Si LED maker to be added to portfolio of Hong Kong-based solar power firm

24 March 2015
Picosun establishes joint industrial ALD research lab at Taiwan's NCTU

Finnish atomic layer deposition firm up founding of Picosun Taiwan subsidiary

23 March 2015
Flip-chip packaging and gallium nitride power transistors

Parallel devices increase output current, reduce on-resistance and exhibit greater temperature insensibility.

23 March 2015
MACOM and Kaiam demo 400G module

First demonstration of single-mode 16x25G solution

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27 March 2015
InGaN waveguides for increasing optical confinement in laser diodes

Low-temperature plasma-assisted molecular beam epitaxy used to obtain high-quality indium gallium nitride layers.

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RSS feeds Features
27 February 2015

Power & speed highlights for compound semiconductors
Mike Cooke reports on presentations given at the recent IEEE International Electron Devices Meeting.

27 February 2015

Millimeter-wave performance of gallium nitride transistors on silicon substrates
The first large-signal measurements at 94GHz have been reported for AlInN/GaN HEMTs on high-resistance silicon.

27 February 2015

Boron nitride releases GaN transistors from self-heating degradation
Transfer to copper plate improves thermal dissipation and increases drain current at high bias.

27 February 2015

Double heterostructure with InGaN channel demonstrates high mobility
InGaN channels have been developed with better high-temperature performance than double heterostructures with GaN channels.

27 February 2015

Resistance memory with all-nitride structure
Research could lead to monolithic transistor–resistor memory devices using III-nitride high-electron-mobility transistors.

27 February 2015

Staircase quantum barriers to improve LED efficiency at high current
Efficiency droop of only 3.3% at 200A/cm2 current density has been achieved in a 450nm-wavelength InGaN LED.

27 February 2015

Thicker InGaN wells enabled by semi-polar (3031) substrate
UCSB produces device with less efficiency droop at high currents and temperatures.

27 February 2015

First 250nm-wavelength nanowire LEDs claimed
Polarization effects used to improve hole density and injection.

Features Archive
RSS feeds Recruitment
14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)

12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara

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