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31 July 2015
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

31 July 2015
IQE named one of 55 key partners in USA's first Integrated Photonics Institute for Manufacturing Innovation

IQE to provide epitaxy services as part of SUNY-led consortium IP-IMI

30 July 2015
AXT acquires InP substrate maker Crystacomm

LEC-based crystal growth supplements AXT's VGF technique

30 July 2015
HexaTech signs Okaya as sole representative in Japan

Okaya makes direct equity investment in HexaTech

30 July 2015
GigOptix achieves first quarter of GAAP profitability

Q3 revenue to be a record $10.3m, up 21% year-on-year

29 July 2015
RFaxis collaborates with Silicon Labs to support Internet of Things and smart home market initiatives

RFAxis's reference designs support Silicon Labs' IP-based Thread wireless mesh networking solution

28 July 2015
High-pressure anneal for indium gallium arsenide transistors

Process reduces interface and border traps in aluminium oxide/hafnium dioxide gate stacks, improving performance and reliability.

28 July 2015
HexaTech wins continued DoE funding

Demonstrated results lead to $1.2m one-year extension of $2.8m two-year ARPA-E contract.

28 July 2015
NASA awards Ozark $245,000 in phase 1 SBIR grants to design SiC-based ICs for Venus Rover

Awards to develop first monolithic SiC UV pixel sensor array, plus SiC-CMOS microcontroller for lander instruments.

28 July 2015
GaN devices market growing at CAGR of 15.1% from $481.8m in 2014 to $1315m in 2021

Market led by North America 31.1% at share then Europe at 28.9%

27 July 2015
Skyworks' quarterly revenue rises a more-than-expected 38% year-on-year to $810m

Integrated mobile systems revenue grows 120% as power amplifiers fall to 24% of revenue

24 July 2015
University of Delaware awarded $1m Keck Foundation grant to develop upconversion of red light to blue

Solar cell, medical imaging and cancer treatment applications targeted

24 July 2015
Riber reports first-half revenue up 18% year-on-year to €5.7m

Orders boosted by strengthening of sales & marketing for research market

23 July 2015
ORNL makes scalable arrays of heterojunctions within nanometer-thick 2D crystalline monolayer

E-beam litho and pulsed laser vaporization selectively converts MoSe2 into MoS2; other materials and structures to be explored

22 July 2015
Cutting leakage in gallium nitride vertical diodes on silicon

Researchers create devices with more than 2A forward current and 300V soft breakdown, using edge termination process.

22 July 2015
Aluminium indium gallium nitride nanowire LEDs on silicon

Spontaneous core-shell structure presents barrier against efficiency-sapping surface recombination. Devices emit wavelengths between 430nm and 630nm.

22 July 2015
Bridgelux to be acquired by group led by China Electronics Corporation

LED smart-lighting business to be spun off as Xenio

21 July 2015
CIGS firm SoloPower to be acquired by London-based Opera Investments for $220m

Reverse takeover to be finalized by end of Q3

News Archive
RSS feeds News Features
29 July 2015
Lowering threshold currents for m-plane III-nitride VCSELs

Ion implant aperture and planar indium tin oxide design reduces threshold current by factor of five.

RSS feeds Other News & Products
News Archive
RSS feeds Features
1 July 2015

Direct demonstration of 1THz performance in InP HEMTs
Northrop Grumman has used indium phosphide high-electron-mobility transistors to create a 10-stage amplifier with 9dB gain at terahertz frequency.

1 July 2015

InGaAs-on-insulator transistors with buried yttrium oxide
A simple MOS back-gate stack has been used to demonstrate what is claimed to be the first InGaAs-on-insulator transistor with a buried yttrium oxide layer, achieving effective mobility of 2000cm2/V-s.

1 July 2015

Opening windows for silicon carbide junction termination extensions
Mike Cooke reports on attempts to improve the effectiveness of junction termination extensions across a range of parameters.

1 July 2015

Raising GaN Schottky diode breakdown with recessed double-field plate anode
University of Notre Dame claims record breakdown voltage of 1.9kV for lateral AlGaN/GaN Schottky barrier diodes on silicon.

1 July 2015

Stressed out InAlN/GaN fin- HEMT boosts performance
Record transconductance and electron velocity achieved at room temperature.

1 July 2015

Sidewall emissionenhancement for deep UV light-emitting diodes
Techniques have been developed to overcome anisotropic photon emission in high-aluminium-content aluminium gallium nitride.

1 July 2015

Red lasers from III-nitride nanowire forests on silicon
Small-signal modulation for plastic fiber optical communication.

11 May 2015

Long-wavelength room-temperature InAs interband cascade lasers
Record 7μm lasing wavelength achieved with less than 1kA/cm2 threshold current density.

Features Archive
RSS feeds Recruitment
12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara



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