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30 September 2016
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

30 September 2016
Osram laser achieves new lab record for brilliance of 4.8W/mm*mrad

Output power of pump modules boosted by 10% for material processing applications

28 September 2016
Power amplifier market growing at CAGR of nearly 14% to 2020

Growth driven by increasing wafer size, adoption of CMOS by start-ups, and need for high-speed amplifiers in defense

27 September 2016
Integrating InGaAs well in ridges on 300mm silicon

Researchers expect realization of first nano ridge laser diodes using aspect ratio trapping techniques in near future.

27 September 2016
Stacked perovskite/CIGS solar module hits record 17.8% efficiency

Tandem module exceeds efficiencies of separate perovskite and CIGS modules

26 September 2016
Reducing subthreshold swing of gallium arsenide transistors

Researchers based in Korea claim record low value.

26 September 2016
Riber slashes losses in first-half 2016, driven by 29% growth in MBE system revenue

Order growth of 40% to strengthen turnaround in full-year 2016

26 September 2016
Two-dimensional gallium nitride with graphene encapsulation

Researchers develop migration-enhanced encapsulated growth process.

21 September 2016
Reducing laser diode optical leakage with indium gallium nitride waveguides

Layers with more than 5% indium content can be used to eliminate mode leakage with relatively thin cladding.

21 September 2016
GigPeak hits record shipments of 40G QSFP+ and 100G QSFP28 ICs for data centers

Driver and TIA IC chipsets sampled for 200G SR & LR PAM4 Ethernet applications

20 September 2016
Finisar demos first suite of extended-reach 100Gb/s QSFP28 modules for enterprise and hyperscale data centers

New portfolio includes eSR4, eCWDM4 and eLR4 transceivers

20 September 2016
AppliedMicro, MACOM and BrPhotonics demo first 100Gb/s PAM-4 single-wavelength solution enabling 100Gb/s and 400Gb/s connectivity in QSFP transceivers

Single-wavelength solution increases faceplate and fiber bandwidth density by 4x over 25Gb/s NRZ solutions and 2x over emerging 28 Gigabaud interconnects

20 September 2016
4WDM MSA Group formed to drive development of 10, 20 and 40km low-cost 100G optical specifications

Industry consortium defining and promoting extended-reach 100G specs for inter-datacenter and access applications

16 September 2016
NCSU's SiC-based inverter achieves 12.1kW/L, close to DOE's target of 13.4kW/L by 2020

In-house-developed ultra-high-density SiC power components to get closer to target

14 September 2016
Indium gallium nitride solar cells with positive temperature coefficient

Researchers develop attractive property for concentrator and high-temperature photovoltaic application using patterned sapphire substrate.

14 September 2016
LESA ERC develops high-speed VLC link with integrated microchip receiver

Further development to target imaging, indoor GPS, occupancy tracking, self-alignment, and mobile wireless hand-over

14 September 2016
IQE's revenue grows 18% year-on-year in first-half 2016

45% growth in photonics drives rise in profit and cash generation

13 September 2016
Evince secures £0.75m in new equity investment for diamond-based electronics

Firm to accelerate technology development program while strengthening patent portfolio

News Archive
RSS feeds News Features
28 September 2016
Flip-chip hybrid external-cavity laser array on silicon platform

Researchers claim first demonstration of integrated surface-normal coupled laser array on silicon-on-insulator photonics platform

RSS feeds Other News & Products
News Archive
RSS feeds Features
1 September 2016

Reaching new heights by producing 1200V SiC MOSFETs in CMOS fab
Monolith Semiconductor and Littelfuse describe how 1200V silicon carbide MOSFETs can be mass produced on 150mm wafers in a CMOS silicon fab.

1 September 2016

Bi-directional silicon carbide planar insulated-gate bipolar transistor
Researchers claim the first experimental demonstration of bi-directional 4H-SiC planar-gate IGBTs on free-standing substrates.

1 September 2016

Zirconium dioxide dielectric for gallium nitride high-mobility transistors
US-based researchers claim record positive threshold for normally-off operation.

1 September 2016

Integrating gallium nitride optoelectronics on silicon
Researchers combine light-emitting diodes, photodetectors and waveguides on single chips, reports Mike Cooke.

1 September 2016

Relaxing multiple quantum wells with low-temperature barriers
South China University of Technology has used low growth temperature to relax strain in III-nitride heterostructures, boosting light output power by 23%.

1 September 2016

Boosting hole injection by including indium gallium nitride in two-layer p-contact
Technique increases LED light output power by almost 40% at 75mA injection and wall-plug efficiency (WPE) by 26%.

1 September 2016

Dependence of efficiency droop on carrier density in non-polar samples
Researchers in the UK find behavior is similar to that of conventional polar samples.

1 September 2016

Probing potential to understand efficiency droop in InGaN LEDs
Korea University sees shift of electron depletion from light-emitting region to non-radiative p-type contact region with increasing current.

Features Archive
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3 August 2016

Project Development Officer
Cardiff School of Engineering

5 August 2016

Senior Cleanroom Process Engineer
Cardiff School of Engineering



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