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Honeywell
30 January 2026

CFIUS clears Wolfspeed issuance of equity to Renesas as part of court-approved restructuring

Renesas’s vice president of finance Aris Bolisay joins board

30 January 2026

5N+ awarded $18.1m US grant to boost germanium production capacity

Facility in St. George, Utah to increase recovery of Ge from industrial residues and mining by-products over next 48 months to 20 metric tons per year

29 January 2026

Wolfspeed unveils TOLT package portfolio

Higher power density and thermal performance to address surging AI data-center demand

29 January 2026

VIS licenses TSMC’s 650V and 80V GaN technology

Vanguard foundry offering dual substrate GaN across high and low voltage

28 January 2026

Veeco and imec develop 300mm-compatible process to enable integration of barium titanate on silicon photonics

First-of-its-kind MBE solution for BaTiO3 epitaxy on silicon to accelerate datacom and quantum computing applications

28 January 2026

Ascent Solar closes up to $25m private placement

CIGS PV firm raises $10m upfront, with up to $15m of potential proceeds upon full exercise of warrants

28 January 2026

Atomera’s GaN-on-Si concept advances to PowerAmerica proposal stage

Paper details Mears Silicon Technology improvements in GaN material quality

28 January 2026

La Luce Cristallina launches CMOS-compatible oxide pseudo-substrate

Enabling high-quality epitaxial strontium titanate films to be grown on 200mm silicon and SOI wafers

27 January 2026

Vertical gallium nitride could transform high-voltage power electronics and support UK net-zero ambitions, says CSA Catapult

Report focuses on GaN-on-GaN architecture

26 January 2026

Ascent Solar announces up to $25m private placement

CIGS PV firm raises $10m upfront, with up to $15m of potential proceeds upon full exercise of warrants

26 January 2026

European photonic chip industry risks losing advantage without decisive action

Steering Committee of CEOs urges priority among revision of EU Chips Act

26 January 2026
Increasing 2DEG density with aluminium nitride barriers
Researchers claim 1.3x1014cm2 record for AlN/GaN structures.
Bruker
CS Clean
Vistec
Honeywell On-demand Webcast
News Features
16 January 2026
Reducing wafer bow in GaN-on-QST growth
Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.
8 January 2026
Metal-modulated cubic GaN epitaxy
Process enables improved morphology and phase purity in red-light-emitting samples.
18 December 2025
Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.
11 December 2025
Patterning GaN for improved red LEDs
Square 300µm template region enhances LED external quantum efficiency by 57%.
4 December 2025
Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report efficiency and power benefits
27 November 2025
Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial cost-effective, large-scale production.
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Feature Downloads
19 January 2026

IDTechEx assesses the status of 800V for EV power electronics
IDTechEx analyses the adoption of silicon carbide and gallium nitride.

19 January 2026

Power SiC faces overcapacity downturn until 2027–2028, before device market grows to nearly $10bn by 2030
In 2025, utilization rates in the silicon carbide supply chain are down to about 50% for upstream processing and 70% for device processing, reckons Yole.

19 January 2026

Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.

19 January 2026

Far-UVC LEDs on c-plane sapphire
Devices with a 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.

19 January 2026

Patterning gallium nitride for improved red LEDs
A square 300μm-square patterned template region is found to enhance red LED external quantum efficiency by 57%.

19 January 2026

Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report benefits for both efficiency and power.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.

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