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18 April 2018

Guerrilla RF completes $3.8m Series E funding round

Capital to bolster working capital needs as firm nears profitability

17 April 2018

EU-funded ESPResSo project targets perovskite solar cell efficiency of 24% and module efficiency of 17%

imec leading consortium aiming to take perovskite PVs from lab to fab

16 April 2018
Combining boron nitride and gallium oxide to boost power transistor
Researchers use hexagonal BN as field plate dielectric to reduce electric field near gate edge of β-Ga2O3 MESFET.
13 April 2018

Riber returns to annual profit

Year-on-year revenue growth of at least 15% targeted for 2018

11 April 2018
Near-ultraviolet aluminium gallium nitride laser diode on silicon
Researchers claim first observation of room-temperature electrically injected device.
11 April 2018

LED packaging market revenue grows from $15.975bn in 2016 to $18.035bn in 2017

China’s MLS climbs from seventh to fourth in revenue ranking

10 April 2018

SMART Photonics and Lumerical make available compact model library for InP integrated photonics platform

Time- and frequency-domain CML and SMART’s MPW runs enable prototyping of PIC designs

10 April 2018

CST Global proves multi-gigabit transmission feasibility with detuned 1270nm DFB lasers facilitating 5G 60GHz radio over fiber

Work with sister firm Sivers IMA to optimize combined ROF, optical and mmWave solution

10 April 2018

Emcore lowers quarterly revenue forecast from $21-23m to $18-19m

Excess inventory at major CATV customer having greater-than-expected impact

9 April 2018
Silicon carbide superjunction Schottky junction diodes
Researchers detail processing and analysis of first functional devices.
9 April 2018

POET partner with 8” silicon foundry SilTerra Malaysia to develop and manufacture Optical Interposer Platform

SilTerra to help purchase fabrication and test equipment, and to share costs of installation and facilities enhancement

News Archive
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18 April 2018
Electro-absorption modulators for vertical-cavity surface-emitting lasers
Modulation depth up to 68% achieved in integrated structure.
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News Archive
RSS feeds Features
4 April 2018

Vanadium dioxide enables III-nitride phase-transition field-effect transistor
Combination gives very low leakage and sub-thermionic steep-switching.

4 April 2018

Tri-anode/slant-gate GaN Schottky barrier diode on silicon
Structure reduces leakage current and increases breakdown voltage for high-performance, competitive-cost power converters.

4 April 2018

Continuous-wave operation of semi-polar blue laser diodes
Operating voltage reduced by using thin p-type layer in combination with indium tin oxide (ITO) transparent conductor electrode as top cladding.

4 April 2018

Stacking III-nitride lasers with tunnel junction connections
Researchers seek high peak power for long-range light detection and ranging automotive and industrial applications.

4 April 2018

III–nitride prospects for VLC applications
Mike Cooke reports on some recent research on various laser and non-laser emitters, along with detectors and waveguides.

4 April 2018

Boosting InGaN LEDs on silicon with tensile stress
Tension increases wall-plug efficiency and reduces droop at high current.

Features Archive


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