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21 February 2018

Integrated Compound Semiconductors launches 10-25G InGaAs-InAlAs PIN and APD detectors

Chip-scale sampling of discrete single-channel devices to be followed by custom array variants for multi-channel 100G+ transceivers throughout 2018

19 February 2018

CST Global receiving £151,699 of UK government funding to lead HELCATS atomic clock project

III-V opto foundry working with NPL and University of Glasgow

14 February 2018
Continuous-wave operation of semi-polar blue laser diodes
Operating voltage reduced by using thin p-type layer in combination with indium tin oxide (ITO) transparent conductor electrode as top cladding.
14 February 2018

Veeco’s revenue rises 9% in Q4/2017, driven by rebound in GaN MOCVD sales to China

Revenue diversification to aid margin growth in second-half 2018

12 February 2018

Lumentum’s record quarterly revenue driven by VCSEL array ramp for 3D sensing in consumer mobile applications

VCSEL and edge-emitting laser capacity being expanded to meet expected demand in second-half 2018

9 February 2018
Opening up bandwidth for visible light communication technology
Researchers study effect of crystal orientation on modulation performance of indium gallium nitride LEDs with lower, more efficient current injection.
9 February 2018

Emcore’s quarterly revenue down 17.6% while awaiting qualification of L-EML RFoG micro-nodes

Continuing inventory overhang at largest cable TV customer to impact March quarter

8 February 2018

Veeco, AMEC and SGL settle MOCVD wafer carrier patent litigation

Normal business processes, including sales, service and importation, to resume

8 February 2018

Gallium oxide as replacement for silicon in lower-cost, smaller microelectronic devices

Wide-bandgap FETs suit high-voltage, high-power and power-switching applications

8 February 2018

Oclaro’s quarterly revenue falls 10% driven by CFP and QSFP client-side 100G transceiver modules

Revenue to bottom in March quarter before June-quarter recovery led by CFP2-ACO sales

7 February 2018
Microwave deposition of gallium oxide on III-nitride on silicon substrate
Researchers demonstrate technology capability with visible-blind deep ultraviolet photodetector.
7 February 2018

ROHM opens European test lab for power electronics components

Purpose-designed test benches ensure scalability and flexibility for future modifications

News Archive
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22 February 2018
III-nitride microphotodetector for visible light communication
Researchers claim record 3.2 gigabit per second data-rate at 405nm wavelength.
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1 February 2018

Fujitsu bonds single-crystal diamond and SiC substrate at room temperature, boosting GaN HEMT performance
Cooling efficiency improvement in power amplifier transmitter increases radar range by about 1.5x.

1 February 2018

Improving efficiency ofV-band indium gallium nitride transistors and MMICs
Device with 48% efficiency achieved at 59GHz gives “best combination” known of power and PAE, according to researchers.

1 February 2018

Practical gallium nitride vertical field-effect transistors
Dr Quanzhong Jiang of Gate Source Drain Semiconductor Ltd discusses practical ways of exploiting the advantages of vertical field-effect transistors over existing lateral gallium nitride high-electron-mobility transistors.

1 February 2018

Gallium nitride transistor on silicon with 250GHz cut-off frequency
Lower costs could benefit the next generation of communication systems for 5G telecoms, vehicles and Internet of Things.

1 February 2018

Vertical power & high-speed III–V devices show their promise
Mike Cooke reports on presentations at International Electron Devices Meeting (IEDM 2017) in San Francisco (2–6 December).

1 February 2018

Reducing bow of InGaP on silicon wafers
Researchers use strain engineering without impacting dislocation density.

1 February 2018

Monolithic indium arsenide quantum dots on silicon optoelectronics
Researchers develop photodetectors with low dark current and comparable performance to germanium devices.

1 February 2018

Ex-situ AlN-on-Si templates
Pulsed laser deposition used to create substrates for 0.5mmx0.5mm devices with 70.2mW light output power at 300mA current injection.

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