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17 December 2018

Optical transceiver market grows 8% year-on-year in Q3/2018 despite localized headwinds

II-VI, Accelink, Innolight, Lumentum, Neophotonics and Sumitomo growing strongly, while Acacia and Oclaro still recovering from ZTE shutdown

17 December 2018

Emcore quarterly revenue rebounds by 42.5%, driven by larger-than-expected cable TV orders

Loss halved to $3.3m, despite R&D spending still being increased

14 December 2018

ALLOS’ customers confirm dynamic on-resistance of carbon-doping-free GaN-on-Si

Good dynamic Ron achieved with good crystal quality and extremely low leakage

12 December 2018

First Solar expects full-year revenue to grow to $3.25-3.45bn in 2019

Margins and profit to rise as OpEx is cut, despite Series 6 module ramp-up and plant start-up expenses

11 December 2018

Imec reports first direct growth of 2D materials on 300mm wafers

WS2-channel transfer process co-developed with SUSS MicroTec and Brewer Science

10 December 2018

Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

10 December 2018

Lumentum completes Oclaro acquisition

Oclaro board member Ian Small joins Lumentum’s board

7 December 2018

OSA develops 4W UVC LED water disinfection module

Collaboration with CiS, Fraunhofer IOSB and Xylem as part of ‘Advanced UV for Life’ consortium

6 December 2018

Lumentum’s acquisition of Oclaro receives anti-trust clearance from China

Acquisition expected to close on or around 10 December

6 December 2018

China’s Hongli Zhuihui and European distributor Selectronic collaborating with Epistar

Hongli to buy $75m of Epistar LED chips to produce automotive lighting products

5 December 2018
Gallium oxide trench Schottky barrier diodes with ultra-low leakage
Researchers claim lowest reverse-bias leakage current yet reported for gallium oxide Schottky diodes.
5 December 2018

Finisar’s quarterly revenue recovers further

Targeted model for operating margin achieved earlier than expected

5 December 2018

CEA-Leti extends 300mm wafer line to open new R&D avenues for industrial partners

Memory, photonics, power electronics, 3D and quantum technology targeted

4 December 2018

IGaN and SilTerra demo D-MISHEMT using 200mm GaN-on-Si wafer on foundry CMOS process

IGaN to offer 100-200mm GaN-on-Si epi and 200mm CMOS-compatible GaN fabrication processes

4 December 2018

Mitsubishi Electric and University of Tokyo reveal new mechanism for enhancing reliability of SiC power semiconductors

Property of sulphur to capture electrons applied beneath gate oxide/SiC interface

News Archive
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12 December 2018
Powering up gallium oxide metal-oxide-semiconductor field-effect transistors
Researchers based in China claim 50MV/cm2 figure of merit record in devices using field plates and ion-implanted source and drain regions.
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10 December 2018

Mini-LED adoption driven by high-end LCD displays and narrow-pixel-pitch LED direct-view digital signage
Adoption is characterized by incremental innovations and limited investment but also supply chain disruption, says Yole Développement.

10 December 2018

Towards ultraviolet optoelectronic systems on silicon substrates
Mike Cooke reports on III–nitride semiconductor on silicon technologies enabling photonic on-chip data transfer and improved material quality for higher-efficiency photon emission and detection.

10 December 2018

High-performance light emission from III–nitride stress/dislocation control
Diodes have achieved high 592mW 456nm-wavelength output power at a low forward voltage of 2.77V with 350mA injection current.

10 December 2018

Low threading-dislocationdensity heteroepitaxial AlN film on sapphire
Simple yet effective technique demonstrates potential for mass fabrication of low-cost and high-performance deep ultraviolet devices

10 December 2018

Large-area silicon carbide ultraviolet visible-blind avalanche photodiode
Variable-temperature resist reflow enables low leakage current and avoids premature breakdown under reverse bias.

10 December 2018

Protecting ‘Made in America’ ingenuity
GTAT’s CEO Greg Knight argues for the US government to prevent critical SiC production equipment and process technology from being lost abroad.

10 December 2018

Peking provides evidence of substitutional C atoms occupying N site with –1 charge state in semi-insulating GaN
Work could provide method for identifying carbon dopant lattice sites in other compound semiconductors.

10 December 2018

III-V heterojunction bipolar transistor MOCVD on 200mm (001) silicon
Researchers hope for future application in power amplifiers for mobile phone handsets.

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