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Honeywell
19 December 2025

onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si

GF’s 200mm eMode GaN-on-Si process to combine with onsemi’s silicon drivers, controllers and thermally enhanced packaging for smaller, more efficient systems

18 December 2025
Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.
18 December 2025

Power SiC faces overcapacity downturn until 2027–2028, before device market grows to nearly $10bn by 2030

Utilization rates down to about 50% for upstream and 70% for device processing in 2025

17 December 2025

NUBURU secures $25m financing to complete acquisitions

Transaction with YA II PN enables accelerated execution of multi-asset integrated defense & security platform

17 December 2025

RENA joins UK-funded consortium to strengthen national semiconductor metrology capabilities

Wet chemical surface preparation equipment supplier supporting UK ecosystem

17 December 2025

NHanced supporting mixed-material heterogeneous hybrid Besi Datacon 8800 CHAMEO ultra plus system is first operational bonder of its kind to enter production

16 December 2025

IDTechEx assesses status of 800V for EVs

Adoption of silicon carbide and gallium nitride analysed

15 December 2025

CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration

Wafer-level assembly of SiGe HBT, RF SOI and passive technologies allows dense co-integration of best-in class functions

15 December 2025

Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap

Collaboration with TSMC yields Imax up to 690µA/µm; partnership with Intel yields improved fab-compatible modules for source/drain contact formation and gate stack integration, with reduced EOT

15 December 2025

NTT reports first RF operation of AlGaN transistors with Al-content over 0.75

Expanding applications of AlN from power conversion to post-5G wireless communications

15 December 2025

CHIPX to establish 8-inch GaN-on-SiC wafer fab in Malaysia

Front-end manufacturing to span infrastructure, R&D, engineering, talent development, and technology transfer

12 December 2025

Navitas expands global distribution network with Avnet

Building on existing Avnet Silica (Europe) relationship to support high-growth high-power markets

Bruker
CS Clean
Vistec
Honeywell On-demand Webcast
News Features
11 December 2025
Patterning GaN for improved red LEDs
Square 300µm template region enhances LED external quantum efficiency by 57%.
4 December 2025
Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report efficiency and power benefits
27 November 2025
Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial cost-effective, large-scale production.
20 November 2025
Far-UVC LEDs on c-plane sapphire
Devices with 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.
13 November 2025
Inverting Ga-polar LEDs for N-polar benefit
Structure enables around 1000x light output over comparable N-polar LED.
30 October 2025
P-type layer etch for enhanced deep UV LEDs
Researchers achieve 10.9% increased light output power.
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Feature Downloads
9 December 2025

Global IP dynamics highlight surging GaN innovation activity in Q3/2025
Of 599 new patent families, 70% originate from Chinese players, notes KnowMade.

9 December 2025

Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial costeffective, large-scale production.

9 December 2025

Inverting Ga-polar LEDs for N-polar benefit
Structure enables around 1000x light output over comparable N-polar LED.

9 December 2025

Benefits of hexagonal mesa for micro-LEDs
Devices demonstrate enhanced current diffusion and uniformity.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.

3 October 2025

Indium arsenide quantum dot laser full MBE on (100) silicon
V-grooves eliminate anti-phase boundaries and reduce threading dislocations.

3 October 2025

Quantum cascade lasers on a mid-infrared silicon photonic platform
Devices have achieved a T0 characteristic temperature of 180K, comparable to state-of-the-art devices on native III-V substrates.

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