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19 June 2018

Finisar’s quarterly revenue falls 6.7% due to lower demand from Chinese OEMs

Return to growth in June quarter to drive improvements in margins and EPS

14 June 2018

NTT and Tokyo Institute of Technology develop IC allowing 100Gbps wireless transmission in 300GHz band

Future development using multiple carrier wavelengths aims to open up terahertz frequencies

13 June 2018

Plasma-Therm acquires CORIAL

Acquisition enhances PlasmaTherm’s support infrastructure for European customer base

13 June 2018

WIN releases platform integrating 0.1µm GaAs pHEMTs with monolithic PIN and vertical Schottky diodes

Combination provides power and low-noise applications with on-chip limiters, detectors, mixers, PIN switch and ESD protection

8 June 2018
Expanding the application potential of hydride vapor phase epitaxy
Researchers see growth technique as offering lower silicon doping for power device applications.
8 June 2018

WIN expands GaN power process capabilities to 0.45µm-gate technology for 5G applications

NP45-11 process provides 50V operation with superior power density and efficiency

8 June 2018

Cree announces CFO transition plan

Executive VP & CFO McDevitt to retire upon appointment of successor

7 June 2018
Aluminium indium nitride as interlayer for green-emitting multi-quantum wells
Photoluminescence increased up to seven fold over conventional structures.
7 June 2018

VisIC raises $10m to expand GaN power device portfolio and address more market segments

Firm to increase technical support team to assist growing worldwide customer base

5 June 2018

Transphorm’s new Gen III GaN power conversion platform increases noise immunity and reduces switching noise

First GaN FET with 4V threshold and new power system development methods result from field experience

4 June 2018

ROHM plans new building at Apollo Plant to expand silicon carbide production capacity

Construction to begin in February 2019 and be completed by end-2020

4 June 2018

ROHM and GaN Systems collaborate on gallium nitride power semiconductors

Firms to co-develop form-, fit- and function-compatible products using GaN dies in both GaN Systems’ GaNPX packaging and ROHM’s power semiconductor packaging

1 June 2018

Lasertel’s parent firm Leonardo commits to $5m capital investment

Funding to increase pump module manufacturing capacity for directed-energy programs and boost development of high-power lasers for lidar and material processing

News Archive
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13 June 2018
Gallium nitride tunnel junctions from pure MOCVD process for VCSELs
Researchers seek to improve current-spreading layers.
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30 April 2018

Widening the prospects for gallium oxide power electronics
Mike Cooke reports on research on gallium oxide as a wider-bandgap semiconductor than gallium nitride and silicon carbide.

30 April 2018

InAs-channel transistors for millimeter-wave and high-speed applications
Researchers achieve record 420GHz maximum oscillation and 410GHz/357GHz maximum oscillation/cut-off frequency balance.

30 April 2018

Tunneling to green light emission with improved efficiency performance
Researchers combine MOCVD and MBE to create LEDs with gallium nitride tunnel-junction contacts.

30 April 2018

Silicon hole injector for deep ultraviolet AlGaN diodes
Devices fabricated with 229nm emission wavelength and 160μW output power.

30 April 2018

Near-ultraviolet AlGaN laser diode on silicon
Researchers in China have claimed the first observation of room-temperature electrically injected lasing in an aluminium gallium nitride near-UV laser on silicon.

30 April 2018

Silicon photonics reaches tipping point, with transceivers shipping in volume
Market to boom for 100G then 400G, with 200G a parallel intermediate step.

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