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31 October 2014
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

29 October 2014
Ascent Solar gains China JV business license, allowing $32.5m cash injection by Suqian

Transfer of manufacturing to cut costs, boosting margins

28 October 2014
RF performance of junctionless trigate GaN FETs

First small-signal model parameter extraction for such devices.

28 October 2014
GigOptix’s revenue rises 6% in Q3, driven by telecoms growth of 49%

Year-on-year growth of 16% driven by ASIC revenue up 46% and datacom revenue up 80%

28 October 2014
Daylight and Thorlabs partner to develop QCLs for defense & security markets

Partnership transferred after Thorlabs’ acquisition of Corning’s QCL business

27 October 2014
Diamond transistor achieves 1530V breakdown voltage

Performance doubles values previously achieved for diamond-based devices.

27 October 2014
Envelope tracking market to exceed 4 billion units by 2018

$3bn market opportunity over five years as ET becomes ubiquitous for 4G smart-phones

24 October 2014
Mid-infrared quantum cascade laser with 24.μm wavelength

Double metal waveguide structure reduces losses to enable longer-wavelength radiation.

24 October 2014
Cree introduces new SC5 Technology Platform with launch of Extreme High Power LEDs

Single-LED light output doubled, cutting system cost by up to 40%

24 October 2014
Riber sees 44% revenue growth in Q3, driven by research MBE systems

Orders rising for Cells & Sources and Services & Accessories

23 October 2014
First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT

Ultrasonic spray pyrolysis deposition creates devices with promising performance characteristics.

23 October 2014
Cree’s quarterly revenue falls 2% to $428m, as lower LED sales outweigh Lighting and Power & RF growth

Lighting margins fall driven by more LED bulb and fewer fixtures, and factory growth pains

23 October 2014
Emcore selling tunable laser and transceiver product lines to NeoPhotonics for $17.5m

Broadband fiber-optics product lines retained, targeting positive cash flow

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29 October 2014
Non-polar aluminium nitride growth for enhancing deep UV optoelectronics

Researchers explore best growth conditions with view to creating ideal platform for light-emitting diodes and laser diodes.

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News Archive
CS Mantech
RSS feeds Features
1 October 2014

Working toward lasers for on-chip global interconnects
Tokyo Institute of Technology has claimed the first RT-CW operation of a lateral-current-injection GaInAsP membrane FP laser on silicon.

1 October 2014

Toshiba red InGaN LED reaches 1.1mW at 20mA
Highest power output achieved so far for such devices.

1 October 2014

Increasing light output from InGaN LEDs on silicon wafer
Substrate removal from under device reduces light absorption for six-fold increase in emission slope.

1 October 2014

MOCVD trends helping to drive down LED chip costs
Veeco’s Sudhakar Raman explains how a new generation of processing equipment is cutting the cost of manufacturing high-brightness LEDs by improving the yield and productivity of the MOCVD process.

1 October 2014

Band engineering for improved photo-electro-chemical etch
A band-engineering technique has been developed to improve photo-electro-chemical etch of nitride materials for optoelectronic and micro-electro-mechanical system applications.

1 October 2014

Ultrathin transitionmetal dichalcogenides and 2D optoelectronics
A strong coupling of light and electrons and holes in ultrathin transition-metal dichalcogenides has opened prospects for efficient solar cells.

1 October 2014

Aspect ratio trapping to improve InGaAs quality on silicon substrates
ART technique eliminates GaAs anti-phase boundaries at a relatively low aspect ratio of 1.3.

1 October 2014

Gallium nitride thin-film transistors produced at less than 250°C
Low-temperature process suggests potential for flexible/transparent electronics application.

Features Archive
RSS feeds Recruitment
14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)

12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara


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