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RSS feeds Headline News
2 February 2012
CIGS PV firm MiaSolé hits 17.3% efficiency with champion module; 14% now in production

Advances in R&D and manufacturing efficacy yield achievements ahead of schedule.

1 February 2012
CPV firm Semprius sets record 33.9% solar module efficiency

Siemens partner to ramp pilot production in second-half 2012.

1 February 2012
Inphi and NeoPhotonics collaborate on 100G optical modules

Firms to accelerate transition to integrated, efficient 100GbE for cloud and data-center applications.

31 January 2012
Latest issue of Semiconductor Today now available

Key coverage of compound and advanced Si semiconductor business and technology.

30 January 2012
Increased mobility and reduced residual electron concentration indium nitride

Boundary-controlled temperature epitaxy gives best figures achieved so far.

30 January 2012
Oclaro’s quarterly revenue down 28% year-on-year

...but recovery from Thailand flooding drives revenue above guidance.

27 January 2012
Year-on-year handset shipment growth of 11% in Q4 takes 2011 to 1.55 billion units

Apple reaches 8% market share in Q4; Samsung’s shipments grow 18% year-on-year as Nokia falls 8%.

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RSS feeds News Features
31 January 2012
Doubling breakdown voltage with double heterostructure

AlGaN/GaN/AlGaN HEMT also reduces off-state leakage by factor of 100.

RSS feeds Other News & Products
3 February 2012

Osram Oslon SSL LEDs in Arquiled’s luminaires illuminate Portuguese supermarkets

3 February 2012

Javelin first fully qualified CMOS PA supplier shipping in 3G smartphones

3 February 2012

M/A-COM Tech launches high-linearity 1.2W GaAs PA for point-to-point applications

3 February 2012

Palomar develops wire-bond-free direct attach for LEDs

2 February 2012

RFMD launches 3.3–4.0V 433–470MHz and 470–510MHz transmit/receive front-end modules

2 February 2012

Inphi appoints Ford Tamer as CEO as president & CEO Sohn retires

2 February 2012

Ascent appoints TFG executive director as CEO as it focuses on Asia

2 February 2012

TI extends family of GaN FET driver ICs with low-side gate driver

2 February 2012

SSEC adds semiconductor industry veteran David Lam to board

2 February 2012

EPC publishes first application-focused GaN transistors textbook

2 February 2012

Skyworks ramps GPS/GNSS receive-only front-end for Samsung

1 February 2012

Cree launches packaged 1700V SiC Schottky diodes

1 February 2012

MidAmerican completes acquisition of 550MW Topaz Solar Farm from First Solar

1 February 2012

Soitec completes acquisition of Altatech

31 January 2012

North Carolina Water Reclamation Facility chooses Cree LED Lighting

31 January 2012

Lumileds launches LUXEON K arrays for retrofit and downlight LED lighting

31 January 2012

Skyworks launches GaAs LNAs for 1.6–3.0GHz receiver applications

31 January 2012

Avago launches high-efficiency front-end module for WiFi 5GHz access points

31 January 2012

NTU Singapore orders Aixtron Black Magic system for high-frequency electronics CNT project

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RSS feeds Features
30 November 2011

Metal-nitride semiconductor avalanche for UV detection
Chinese group produces first MSM APDs on free-standing GaN with 400μm x 400μm effective area.
30 November 2011

Nitrogen/oxygen plasma improves p-type MgZnO for zinc oxide UV LEDs
LEDs produced with 35x the intensity of devices produced with nitrogen-only plasma at 20mA.
30 November 2011

Deep ultraviolet goes deeper on silicon
Epitaxial lateral overgrowth used to improve the quality of aluminum nitride templates for deep UV LEDs.
30 November 2011

Record output for single-chip 262nm mid-UV LED
Crystal IS and US ARL approach power needed for specialized use.
30 November 2011

Wet versus dry etching for sapphire wafers
Imtec Acculine’s Derek Mendes discusses how wet etching of patterned sapphire substrates for GaN LED manufacturing can present cost savings over dry etching.
30 November 2011

Patterned sapphire for nitride enhancements
In the past few years, patterned sapphire substrates have been used to improve performance of nitride semiconductor light-emitting devices.

30 November 2011

First Chinese Ka-band nitride semiconductor MMIC
Researchers look to higher frequency of ~30GHz for microwave device construction.
30 November 2011

Passivated AlInN/GaN HEMT pushes past 200GHz cut-offs
Switzerland-based research characterizes 30nm-gate-length high-electron-mobility transistor with cut-off frequency of 205GHz.
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8 November 2011

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CrystAL-N - Substrates for epitaxy