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2 September 2014
China’s CNBM completes acquisition of Germany’s Avancis

Production being restarted with improved CIGS PV module design

2 September 2014
Efficient tunable spin-charge converter made of GaAs

Mainz University open up new approach to searching and engineering spintronic materials

28 August 2014
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

28 August 2014
WDM market grows 10% year-on-year to record $2.6bn in Q2

DWDM long-haul equipment grows 18% while WDM metro grows just 4%

27 August 2014
Graded electron blocking improves III-nitride VCSEL performance

Varying AlGaN composition flattens barrier to hole injection while raising barrier to electron overflow.

27 August 2014
Cree to invest $83m in 13% stake in Taiwanese LED maker Lextar

Lextar’s sapphire-based mid- and low-power LEDs to allow Cree to focus on high-power LEDs

26 August 2014
Transphorm partners with Tata on GaN-based solar inverters for India

First product to be launched in early 2015

25 August 2014
Scaling III-V integration to 300mm-diameter silicon and beyond

Direct wafer bonding method could open way to integrated high-mobility electronics and optoelectronics.

22 August 2014
Murata to acquire Peregrine for $465m

RF front-end and SOI technology to supplement Murata’s RF modules

21 August 2014
High-electron-mobility light-emitting devices for optoelectronics

Nitride semiconductor transistor heterostructure used as basis for light-emitting Schottky diodes and transistors.

21 August 2014
COB LED market to reach $9180m by 2020

Illumination applications comprise over 45% of market; Asia Pacific over 50% of market by region

21 August 2014
Fukuda Crystal Lab grows 2-inch scandium aluminium magnesium oxide crystal rivalling sapphire

Commercial launch as GaN blue LED substrate targeted for spring 2015

20 August 2014
Infineon to acquire International Rectifier for $3bn

Power semiconductor maker adds IR’s system expertise in power conversion while expanding in GaN-on-Si

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RSS feeds News Features
2 September 2014
New slant on field plates for gallium nitride HEMTs

Increase in breakdown voltage of 66% achieved over conventional field-plate design.

RSS feeds Other News & Products
26 August 2014

Soraa adds UK distributor

News Archive
CS Mantech
RSS feeds Features
1 September 2014

Enabling silicon photonics through advances in III-V integration on silicon
EV Group’s Dr Martin Eibelhuber discusses a wafer-level die transfer process for bonding InP laser dies to a silicon photonics wafer, allowing volume production.

1 September 2014

Simplifying zinc oxide/ gallium nitride nano-rod LED fabrication
An oblique-angle RF magnetron sputtering technique could result in low-cost, reliable mass production of nano-scale optoelectronics.

1 September 2014

Techniques for highefficiency nitride LEDs on lithium gallate substrate
External quantum efficiency and light output power have been achieved that are comparable to best values in the field.

1 September 2014

Tailored last quantum barrier achieves more efficient, powerful GaN LEDs
External quantum efficiency and light output power have been boosted by 12% at 150mA injection current for a three-step graded device.

1 September 2014

Nano-scale gallium oxide high-voltage transistor demonstration
Easy production of nanomembranes of wide-bandgap material motivates research towards integration into multiple platforms.

1 September 2014

Stress bumps improve nitride semiconductor packaged transistor performance
Flip-chip technology has been used to introduce strain-enhancement for the first time, according to researchers.

1 September 2014

Optimizing ammonia-based MBE for gallium nitride electron mobility
University of California Santa Barbara and National Taiwan University have claimed the highest roomtemperature bulk GaN mobility reported to date.

1 September 2014

Deep UV LED research moving performance beyond 10% efficiency
Mike Cooke reports on progress made by a number of research teams.

Features Archive
RSS feeds Recruitment
12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara


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