CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

RSS feeds Headline News
24 January 2020

Epitaxy equipment market to grow from $940m to over $6bn by 2025, driven by VCSEL and disruptive LED devices

Disruptive non-silicon-based ‘More than Moore’ devices lead to more competitive epitaxy growth landscape

23 January 2020

Shin-Etsu licenses Qromis’ GaN substrate technology

Silicon substrate maker to further develop portfolio of large-diameter GaN-related products

22 January 2020

TDK Ventures invests in GaN laser light firm SLD Laser

New application areas targeted for Soraa spin-off’s semi-polar GaN-based products

20 January 2020

Fraunhofer IAF reports record 640GHz InGaAs MOSHEMT transistors

Replacing InAlAs barrier with Al2O3 and HfO2 isolating layers reduces gate leakage current more than 1000-fold

17 January 2020

Lancaster University shows how InAs/AlSb resonant-tunnelling non-volatile memory consumes 100 times less switching energy than DRAM

Work targets manufacturability of working memory chips, including arrays, readout logic, scaling and implementation on silicon

16 January 2020
Indium selenide expands potential of 2D optoelectronic structures
Excitons with out-of-plane dipole could enhance photonics applications with improved coupling to waveguides and optical fibers.
16 January 2020

ON Semiconductor signs LiDAR collaboration MOU with SOS LAB

LiDAR to be developed and commercialized for automotive and smart factory markets

15 January 2020

ROHM’s SiCrystal wins $120m multi-year deal to supply 150mm silicon carbide wafers to ST

Agreement aims to support commercial expansion of SiC products in automotive and industrial applications

10 January 2020

Imec demos scalable III-V and III-N devices on silicon, targeting beyond-5G RF front-end modules

First functional GaAs HBTs on 300mm Si and CMOS-compatible GaN devices on 200mm Si for mm-wave applications presented at CCNC 2020

10 January 2020

Ambarella, Lumentum and ON Semiconductor collaborate on 3D sensing platform for access control and smart video security

Lumentum’s VCSELs expanding into video security and AI vision applications

10 January 2020

Entegris acquires CMP slurry manufacturer Sinmat

Specialty chemicals firm targets SiC and GaN power and RF markets

9 December 2020
Thermal droop in indium gallium nitride light-emitting diodes
Researchers see power losses at high temperature as mainly being caused by transport effects.
9 January 2020

MICLEDI raises €4.5m from imec.xpand, PMV and FIDIMEC

imec spin-off aims to develop micro-LED displays for AR glasses

9 January 2020

JinkoSolar partners with Shanghai Institute of Space Power-Sources

High-efficiency solar cells to be developed using silicon wafer as bottom cell and substrate

8 January 2020

Qorvo expands cellular IoT portfolio

Cellular IoT partnership with Nordic enables always-on global connectivity for battery-powered devices

7 January 2020

Emcore agrees sale and leaseback deal for Concord MEMS facility

$13.4m deal to close this quarter

6 January 2020

Sanan IC appoints Plextek RFI as GaAs MMIC design services partner for 5G

Plextek RFI demos 5G mm-wave PA reference design on Sanan IC P15EP1 GaAs technology

30 December 2019

Amtech completing sale of solar business in January

Equipment maker refocusing on power semiconductor and silicon carbide markets

News Archive
RSS feeds News Features
23 January 2020
Enhancing AlGaN hole injection with germanium-doped tunnel junctions
Light output power increased between 3 and 6 times over reference aluminium gallium nitride diode.
RSS feeds Other News & Products
News Archive
Advert
RSS feeds Features
11 December 2019

Indium phosphide template for laser and silicon-on-insulator integration
Researchers combine wafer bonding and direct epitaxy on silicon approaches to reduce threading dislocation density by two orders of magnitude.

11 December 2019

Aluminium gallium nitride enables deep ultraviolet laser diodes
Mike Cooke reports on recent achievements of electrically- and opticallypumped devices, along with some developments in material processing.

11 December 2019

InGaN surface-emitting superluminescent LEDs
Researchers claim record high light output power of 2.2W in pulsed operations.

11 December 2019

Boost to magnesium doping of GaN on freestanding substrates
Researchers find higher free hole concentrations for a given doping level, compared with material grown on sapphire.

11 December 2019

High-carrier-density two-dimensional hole gas in strained gallium nitride
Development of p-channel transistors could enable high-voltage circuits using more power-efficient complementary combination with n-channel devices.

11 December 2019

SiC 600V transistors comparable to silicon
High-frequency figures of merit surpass those of Infineon’s commercially available 600V P7 silicon CoolMOS technology, according to researchers.

Features Archive

Aixtron

Arm Purification

K-Space

LayTec advert