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24 October 2014
Cree introduces new SC5 Technology Platform with launch of Extreme High Power LEDs

Single-LED light output doubled, cutting system cost by up to 40%

24 October 2014
Riber sees 44% revenue growth in Q3, driven by research MBE systems

Orders rising for Cells & Sources and Services & Accessories

23 October 2014
First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT

Ultrasonic spray pyrolysis deposition creates devices with promising performance characteristics.

23 October 2014
Cree’s quarterly revenue falls 2% to $428m, as lower LED sales outweigh Lighting and Power & RF growth

Lighting margins fall driven by more LED bulb and fewer fixtures, and factory growth pains

23 October 2014
Emcore selling tunable laser and transceiver product lines to NeoPhotonics for $17.5m

Broadband fiber-optics product lines retained, targeting positive cash flow

23 October 2014
Houston wins $1.5m SunShot grant for GaAs thin-film PV on metal foil

DOE grant to fund work to boost efficiency and lower costs

22 October 2014
LED product maker PRP Opto announces long-term strategic investment partnership with Veruth

Funds to aid continued product development and market diversification

21 October 2014
GaN LEDs in automotive to exceed $1bn for first time

Exterior applications driving 11% growth from $943m in 2013 to $1.05bn in 2014, then $1.3bn in 2018

21 October 2014
Chalmers sets 40Gb/s data transmission speed record for 140GHz chip

InP circuits targeted by Ericsson at transmission between base stations and cellular towers

20 October 2014
Versatilis awarded US patent for processing semiconductor fines/ powders

Low-cost process targeted at large, flexible arrays of micro-solar cells and LEDs

17 October 2014
Fujitsu develops lower-cost CMOS-based automotive millimeter-wave radar

Prototype CMOS transceiver chip suppresses oscillator noise on receiver circuit by configuring frequency-conversion circuit for 76-81GHz band; power consumption halved versus SiGe

17 October 2014
Adoption of flip-chip LEDs and chip-scale packaging changing material/equipment market and supply chain

LED packaging equipment market growth to return for next 3 years, then fall sharply

16 October 2014
Alta Devices cooperating with Airware to integrate solar power into small UAVs

Four-fold increased flight endurance critical for precision agriculture, search & rescue, land surveying and commercial applications

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24 October 2014
Mid-infrared quantum cascade laser with 24.μm wavelength

Double metal waveguide structure reduces losses to enable longer-wavelength radiation.

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RSS feeds Features
1 October 2014

Working toward lasers for on-chip global interconnects
Tokyo Institute of Technology has claimed the first RT-CW operation of a lateral-current-injection GaInAsP membrane FP laser on silicon.

1 October 2014

Toshiba red InGaN LED reaches 1.1mW at 20mA
Highest power output achieved so far for such devices.

1 October 2014

Increasing light output from InGaN LEDs on silicon wafer
Substrate removal from under device reduces light absorption for six-fold increase in emission slope.

1 October 2014

MOCVD trends helping to drive down LED chip costs
Veeco’s Sudhakar Raman explains how a new generation of processing equipment is cutting the cost of manufacturing high-brightness LEDs by improving the yield and productivity of the MOCVD process.

1 October 2014

Band engineering for improved photo-electro-chemical etch
A band-engineering technique has been developed to improve photo-electro-chemical etch of nitride materials for optoelectronic and micro-electro-mechanical system applications.

1 October 2014

Ultrathin transitionmetal dichalcogenides and 2D optoelectronics
A strong coupling of light and electrons and holes in ultrathin transition-metal dichalcogenides has opened prospects for efficient solar cells.

1 October 2014

Aspect ratio trapping to improve InGaAs quality on silicon substrates
ART technique eliminates GaAs anti-phase boundaries at a relatively low aspect ratio of 1.3.

1 October 2014

Gallium nitride thin-film transistors produced at less than 250°C
Low-temperature process suggests potential for flexible/transparent electronics application.

Features Archive
RSS feeds Recruitment
14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)

12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara

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