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RSS feeds Headline News
26 July 2016
Wide-bandgap power semiconductor device market to grow at 33% annually to $3.7bn in 2025

SiC power market to exceed $3bn as GaN power market surpasses $600m

26 July 2016
Infineon's acquisition of Wolfspeed just the beginning of collaborations in SiC power electronics, reckons Yole

After International Rectifier and Infineon, Fairchild and ON Semiconductor, and Wolfspeed and APEI, who will be next?

25 July 2016
Relaxing multiple quantum wells with low-temperature barriers

Technique increases light output power by 23%.

25 July 2016
Osram acquiring automotive LED module maker Novità

Acquisition a further step in implementing three-pillar strategy

21 July 2016
IQE's first-half growth of 15% year-on-year driven by diversification

Double-digit growth in photonics driven by a range of emerging end-markets

20 July 2016
SiC power market growing at CAGR of 19% to 2021 as it spreads to more applications

SiC diodes hold 85% market share, but SiC transistors to reach 27% share in 2021

20 July 2016
Mobile phone LED market to fall at CAGR of 2.6% from 2015 to 2021

…but phone camera flash LED market to rebound in 2017

20 July 2016
RF high-power semiconductor market for wireless infrastructure flattening out in 2016 despite overall market exceeding $1.5bn in 2015

GaN capturing meaningful market share, especially in wireless infrastructure

19 July 2016
Zirconium dioxide dielectric for gallium nitride high-mobility transistors

Researchers claim record positive threshold for normally-off operation.

19 July 2016
HEA2D consortium to create basis for end-to-end processing chain for 2D nanomaterials

Aixtron-led team to devise processes for high-volume manufacturing of 2D nanomaterial products

18 July 2016
Sodium flux route to free-standing gallium nitride substrates

Researchers develop liquid phase epitaxy method to both grow GaN and dissolve sapphire at high temperature, avoiding cracking.

18 July 2016
Innovate UK offering £4m in funding for projects to speed development of compound semiconductors applications

Power electronics, RF/microwave, photonics and sensors targeted

15 July 2016
Yellow-green indium gallium nitride quantum dot laser

Researchers claim 'green gap' vertical-cavity surface-emitting laser first to operate in continuous-wave mode.

15 July 2016
NRL explains radiation tolerance of AlGaN/GaN HEMTs versus AlGaAs/GaAs HEMTs

Piezoelectric field at AlGaN/GaN interface causes scattered carriers to be reinjected into 2DEG channel, mitigating harmful radiation effects

15 July 2016
Flexible ultra-thin gallium arsenide photovoltaic devices

Researchers see application as electric power sources deployed on pairs of glasses and/or fabric.

14 July 2016
Infineon to acquire Wolfspeed for $850m

Infineon compound semiconductor power solutions range boosted by SiC, GaN-on-Si and GaN-on-SiC

13 July 2016
Dependence of efficiency droop on carrier density in non-polar samples

Researchers find behavior is similar to that of conventional polar samples.

13 July 2016
SemiLEDs' revenue falls 18% quarter-on-quarter, down 47% year-on-year

Cash reserves fall as margins and losses worsen

News Archive
RSS feeds News Features
26 July 2016
Wafer bonding to integrate silicon, gallium arsenide, and gallium nitride

Researchers look to integrate scaled CMOS and diverse functions such as light emission and high-frequency, high-power electronics.

RSS feeds Other News & Products
News Archive
RSS feeds Features
13 June 2016

Looking to the future with III-V finFETs
Mike Cooke reports on recent separate TSMC- and IBM-led research.

13 June 2016

Wafer-scale lift-off of III-nitride epitaxial layers with boron nitride
New technique could reduce process times and costs compared with laser and chemical techniques.

13 June 2016

Fully vertical gallium nitride p-i-n diode grown on silicon substrate
Researchers claim the first demonstration of GaN vertical p-i-n diodes on silicon with high performance.

13 June 2016

III-nitride high-electron- mobility transistors on flexible tape
Researchers claim the first demonstration of 10GHz large-signal microwave power performance for flexible AlGaN-barrier HEMTs.


13 June 2016

Coplanar fabricated indium gallium nitride light-emitting diodes
Simpler technique cuts photolithography and metal deposition steps and offers potential path towards LED displays.

13 June 2016

Aluminium gallium nitride nanowire UV LED fabricated on metal foil
Researchers see development as first step towards scalable roll-to-roll manufacturing of nanomaterial based solid-state optoelectronics.

13 June 2016

Quantum well/barrier intermixing blue-shift of indium gallium phosphide
Thick silicon dioxide strain layer encourages thermal diffusion of aluminium to give largest shift reported for material system, according to researchers.

13 June 2016

SiO 2 charge inverter boosts hole injection in InGaN LEDs
External quantum efficiency increased 20% at 20mA current.

Features Archive
RSS feeds Recruitment
22 July 2015

Senior Director of GaN Technology

22 July 2015

General Manager



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