Honeywell
21 August 2025
Foundry fabricated AlN-buffer HEMTs
Significant step towards industrial AlN/GaN/AlN transistors
20 August 2025
D-band GaN power HEMTs on silicon
Researchers report highest-frequency device performance so far.
20 August 2025

AXT’s Tongmei receives China export permits to resume shipping InP substrates to certain customers

Several million dollars of revenue to be added to Q3/2025 forecast

18 August 2025

OKI develops Tiling crystal film bonding

Technology enables heterogeneous integration of optical semiconductors onto 300mm silicon wafers

12 August 2025
1200V fully vertical GaN-on-silicon MOSFETs
Fluorine-ion implant termination enables high breakdown.
8 August 2025

Veeco’s Q2 revenue, operating income and EPS exceed guidance, but constrained by tariffs

China drops from 42% to 17% of revenue, while Asia Pacific rises from 36% to 59%

8 August 2025

Lumentum expanding ultra-high-power laser production in San Jose

UHP lasers for co-packaged optics targeted at AI infrastructure

7 August 2025
N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.
7 August 2025

Skyworks’s June-quarter revenue, gross margin and EPS exceed guidance

Woburn fab to be consolidated into Newbury Park to optimize manufacturing utilization, fixed costs and efficiency

6 August 2025

Navitas’ cuts losses in Q2 despite revenue still being down year-on-year

Focus on AI data centers and energy infrastructure for future growth

6 August 2025

Coherent inaugurates $127m factory in Vietnam

Nhon Trach 1 Factory in Dong Nai province to manufacture silicon carbide and optics products

5 August 2025

AXT’s Q2 revenue constrained by slower-than-expected China export permitting

Order backlog of $10m to yield growth in Q3 as permitting accelerates

Bruker
CS Clean
Vistec
News Features
24 July 2025
Gallium oxide HFET combines polytypes
First ε-/α-Ga2O3 transistor achieves promising breakdown and on-resistance performance.
17 July 2025
ScAlN ferroelectric AlGaN HEMT opportunities
Potential for future reconfigurable multi-function, memory, and high-temperature applications.
10 July 2025
Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift constrained to 6.2nm between 1mA and 100mA injection.
3 July 2025
Improving mobility in InAs quantum wells on GaAs substrate
Surface smoothing to reduce step bunching could enable less expensive, superior alternative for quantum information and other applications.
26 June 2025
AlYN-barrier GaN HEMTs for next generation devices
Researchers demonstrate low subthreshold swing and high on/off current ratio
12 June 2025
Tracking down sources of efficiency droop
Researchers modify ABC model to extract impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
Feature Downloads
28 July 2025

High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.

28 July 2025

AlYN-barrier GaN HEMTs for next generation devices
Researchers demonstrate low subthreshold swing and high on/off current ratio.

28 July 2025

Low-cost, scalable process for integrating GaN transistors onto silicon CMOS chips
An MIT-led team shows how Intel 16 22nm FinFET metallization and passive options enable the incorporation of components such as neutralization capacitors.

28 July 2025

Singapore opens NSTIC (GaN) as first national facility for gallium nitride
A*STAR, DSO and NTU Singapore partner on the National Semiconductor Translation and Innovation Centre for Gallium Nitride.

28 July 2025

Mass production QF-HVPE of GaN-on-GaN system
Researchers claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.

28 July 2025

Monolithic HEMT– micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.

28 July 2025

Tracking down sources of efficiency droop
Researchers at UIUC have modified the ABC model to extract the impacts of Auger–Meitner recombination, charge polarization, and junction temperature.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.