Semiconductor Today: August 2008 issue

August 2008 issue

News:
Thin film to capture 28% of PV market by 2012 • GaAs market grew 17% in 2007 • Fab upgrades shift GaAs demand from 4” to 6” • Silicon to displace GaAs in automotive radar from 2013 • RFMD launches first GaN CATV amplifier modules • First 5.8GHz ISM-band transceiver with integrated PA • Toshiba’s roadmap for GaN HEMTs • Panasonic’s record gain at 26GHz in GaN ICs • TriQuint and Cree launch first GaN foundry • First GaN HEMTs for 5GHz WiMAX • Umicore to double Ge substrate capacity • PolarCoN project awarded €2m to close ‘green gap’ • IQE grows 26% • BluGlass opens GaN-on-glass blue LED pilot plant • Osram claims record white LED brightness and efficacy • Pirelli takes stake in CyOptics • 3S invests in Korean packaging firm • Opnext to acquire StrataLight • Emcore wins $29m of CPV receiver orders • Wakonda raises $9.5m and relocates • Magnolia and Kopin co-developing InN-based quantum dot solar cells • DayStar to ramp production by Q1/2009 • ArcelorMittal invests $20m in Miasolé

Technology Focus:
Oxide materials for III–V MOSFET gate stacks

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RSS feedsFeatures

7 August 2008

Oxide materials for III–V MOSFET gate stacks

New incentive to find suitable ‘gate oxides’ for III–Vs could lead to early adoption of III–Vs into mainstream logic.

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Step towards low-cost white light emitters with back-reflectors

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RSS feedsRecruitment

22 July 2008

Marie Curie Transfer of Knowledge Position on 3D structured metal films

Tyndall National Institute, Ireland

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PhD position in tuneable VCSELs at telecommunication wavelengths

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PhD position (PiFAS)

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PhD position (PiFAS)

Tyndall National Institute, Ireland

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Silicon carbide epitaxial specialist

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Bookstore Archive