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15 February 2019

Osram’s quarterly revenue falls 15% year-on-year

Sales impacted by weak mobile, lighting and auto markets, especially in China, plus political uncertainties
14 February 2019
Boosting switching frequency in gallium nitride vertical fin transistors
New argon-implant edge termination process allows high 1.2kV breakdown and 5A drain current.
13 February 2019

Veeco’s revenue falls 22% in Q4/2018 due to commoditization of China LED MOCVD market

Focus on transition to Front-End Semiconductor and Compound Semiconductor markets such as MOCVD for 3D sensing VCSELs
12 February 2019

Qorvo’s 5G infrastructure revenue growth offsets weak mobile market in China

Closure of Florida SAW fab and postponement of production at new BAW fab in Farmers Branch, Texas, to cut costs
11 February 2019

Emcore’s quarterly revenue falls 4.9% to $24m

Margins recovering as chip sales rise and production costs of new L-EML transmitters decline
11 February 2019

Lumentum’s revenue suppressed by faltering 3D sensing laser demand, but telecoms demand outstripping capacity expansion

Margins diluted by Oclaro acquisition, but synergies to outweigh revenue loss from paring low-margin products
11 February 2019

Skyworks quarterly revenue down 7.6% year-on-year to $972m

Falling Mobile revenue from China to continue, but Broad Markets to rebound from trough
8 February 2019

Newport compound semiconductor foundry at CSconnected recruits first 32 staff

First ten production tools installed, with capacity in place for next ten; first product samples already shipped
8 February 2019
US DOE’s ARPA-E awards $35m to 12 new projects to support medium-voltage devices for grid, industry and transportation
Projects focus on SiC and GaN devices for kilovolt DC power management
7 February 2019
Graphene-enabled aluminium gallium nitride nanopyramid arrays on silicon
Researchers see potential applications for UV light-emitting diodes, photodetectors, and lasers.
7 February 2019
ST acquiring majority stake in SiC wafer maker Norstel
Control of supply chain to strengthen flexibility to serve automotive and industrial applications
6 February 2019
Disco completes construction of new Zone C in Kuwabata Plant’s A-Building
Zone D construction to begin in September
6 February 2019
AIM Photonics announces best-in-class 300mm silicon photonics MPW performance
MPW runs scheduled throughout 2019
6 February 2019
CEA-Leti prototypes silicon photonics-based mid-IR optical chemical sensor for portable devices
Coin-size, on-chip sensors combine high performance and low power consumption
4 February 2019
Cree’s quarterly revenue grows 12% year-on-year, driven by Wolfspeed’s organic growth of over 50%
Silicon carbide adoption driving acceleration in Wolfspeed capacity expansion
News Archive
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15 February 2019
Selective-area emitter for gallium nitride bipolar transistors
Ohmic base contact enables high current and power density and 90 current gain, believed to be highest among reported devices on sapphire.
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8 February 2019

CVD appoints new CFO

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1 February 2019

Improving ohmic contacts in III-nitride high-electronmobility transistors
Researchers insert gold layer between titanium and aluminium to improve both the static and radio-frequency performance.

1 February 2019

Laser annealing enables gate-first fabrication of III-nitride transistors
A localized technique also results in 27% higher drain current than gate-last global rapid thermal processing.

1 February 2019

Increasing current performance in III–nitride p-channel transistors
Researchers fabricate a recessed-gate device with a channel consisting of a two-dimensional hole gas at the gallium nitride/aluminium nitride interface.

1 February 2019

GaN vertical-channel junction field-effect transistors
RWTH Aachen University claims the first experimental realization of quasi-vertical devices using selective-area regrowth.

1 February 2019

Quantum dot laser diodes on CMOS-compatible on-axis silicon substrates
Devices deliver total light output power of more than 110mW near the mid-/long-haul optical fiber C-band infrared range.

1 February 2019

Mid-IR AlGaN quantum cascade detector on silicon
Device promising for integrated-optoelectronics technology, showing potential for ultra-fast operation at very wide spectral range

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