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30 September 2014
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

29 September 2014
IntelliEPI acquires Soitec's GaAs epi business

IntelliEPI to widen customer base including automotive radar market, as Soitec focuses on key products

25 September 2014
ON Semiconductor and Transphorm to co-develop and co-market GaN-based power systems

Low-voltage MOSFET silicon cascoded switch plus GaN HEMT transistors to be co-packaged at ON Semiconductor

25 September 2014
Pulsed RF power semiconductor device markets to exceed $300m by 2019

GaN driving market growth for devices above 5W operating up to 18GHz

25 September 2014
GaN micro-rods grown on graphene yield flexible LEDs

Catalyst-free MOCVD process promises bendable and stretchable electronic and optoelectronic devices

24 September 2014
Plessey adds in-house GaN-on-Si LED assembly line

Line to provide engineering samples and pilot builds ahead of full production

23 September 2014
TI launches its first 100G TIA

Transimpedance amplifier complements firm’s laser drivers and limiting amplifiers

23 September 2014
Iridium qualifies Spectrolab-powered solar panel system for NEXT satellites

New, larger triple-junction solar cells manufactured from 6-inch wafers

23 September 2014
Oclaro expanding manufacturing capacity for 100G client-side pluggable optics

Second-generation CFP2 transceiver unveiled

22 September 2014
ZSW raises thin-film PV efficiency record from 21% to 21.7%

CIGS’ lead over multicrystalline solar cells extended to 1.3%

22 September 2014
SDK boosts 6” SiC epi production capacity for power devices from 400 to 1100 wafers per month

Shipment of new-grade SiC epi with fewer defects and higher uniformity to start in October

18 September 2014
Dow Corning expands Prime Grade SiC wafer portfolio from 100mm to 150mm diameter

Prime Grade portfolio on show at ECSCRM 2014 in Grenoble

18 September 2014
Emcore selling space solar business to Veritas Capital

Further cost cutting targets EBITDA break-even of remaining business by September 2015

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24 September 2014
Single-crystal gallium arsenide on metal foil

Technique could open way to low-cost high-efficiency solar cells with roll-to-roll production.

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RSS feeds Features
1 September 2014

Enabling silicon photonics through advances in III-V integration on silicon
EV Group’s Dr Martin Eibelhuber discusses a wafer-level die transfer process for bonding InP laser dies to a silicon photonics wafer, allowing volume production.

1 September 2014

Simplifying zinc oxide/ gallium nitride nano-rod LED fabrication
An oblique-angle RF magnetron sputtering technique could result in low-cost, reliable mass production of nano-scale optoelectronics.

1 September 2014

Techniques for highefficiency nitride LEDs on lithium gallate substrate
External quantum efficiency and light output power have been achieved that are comparable to best values in the field.

1 September 2014

Tailored last quantum barrier achieves more efficient, powerful GaN LEDs
External quantum efficiency and light output power have been boosted by 12% at 150mA injection current for a three-step graded device.

1 September 2014

Nano-scale gallium oxide high-voltage transistor demonstration
Easy production of nanomembranes of wide-bandgap material motivates research towards integration into multiple platforms.

1 September 2014

Stress bumps improve nitride semiconductor packaged transistor performance
Flip-chip technology has been used to introduce strain-enhancement for the first time, according to researchers.

1 September 2014

Optimizing ammonia-based MBE for gallium nitride electron mobility
University of California Santa Barbara and National Taiwan University have claimed the highest roomtemperature bulk GaN mobility reported to date.

1 September 2014

Deep UV LED research moving performance beyond 10% efficiency
Mike Cooke reports on progress made by a number of research teams.

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University of California, Santa Barbara

 
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