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22 September 2014
ZSW raises thin-film PV efficiency record from 21% to 21.7%

CIGS’ lead over multicrystalline solar cells extended to 1.3%

22 September 2014
SDK boosts 6” SiC epi production capacity for power devices from 400 to 1100 wafers per month

Shipment of new-grade SiC epi with fewer defects and higher uniformity to start in October

18 September 2014
Dow Corning expands Prime Grade SiC wafer portfolio from 100mm to 150mm diameter

Prime Grade portfolio on show at ECSCRM 2014 in Grenoble

18 September 2014
Emcore selling space solar business to Veritas Capital

Further cost cutting targets EBITDA break-even of remaining business by September 2015

17 September 2014
Peregrine launches 18GHz UltraCMOS SP4T RF switches

RF SOI switches extended from 13GHz

16 September 2014
Ultrafast charge separation in metal dichalcogenide heterostructure

Hole transfers from molybdenum disulfide to tungsten disulfide monolayer in less than 50 femtoseconds.

16 September 2014
IQE increases underlying profit in first-half 2014 despite 17% year-on-year drop in revenue

Further benefits of restructuring expected from second half onwards

16 September 2014
Norstel and Ascatron ally to provide complete SiC epi offering

Norstel’s SiC crystal growth and volume epiwafer production to complement Ascatron’s custom SiC epi and device design

16 September 2014
Luceda Photonics receives growth finance for development and marketing of PIC design framework

IPKISS software to aid design photonic integrated circuit designers

15 September 2014
Raytheon UK and Newcastle University team to investigate SiC interface defects

Project aims to improve performance for both in-house SiC CMOS devices and foundry services

15 September 2014
IQE agrees MOU with WIN and Nanyang for Singapore centre of excellence

Epi foundry provides facilities, equipment and IP to new JV Compound Semiconductor Development Centre

11 September 2014
LED market to grow at 13.5% CAGR to $42.7bn in 2020

LEDs to command 20% share of lighting market by 2020

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17 September 2014
One-dimensional heterojunctions in metal dichalcogenide monolayers

Junctions between two-dimensional materials should enable new kinds of transistors, LEDs, nanolasers, and solar cells.

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RSS feeds Features
1 September 2014

Enabling silicon photonics through advances in III-V integration on silicon
EV Group’s Dr Martin Eibelhuber discusses a wafer-level die transfer process for bonding InP laser dies to a silicon photonics wafer, allowing volume production.

1 September 2014

Simplifying zinc oxide/ gallium nitride nano-rod LED fabrication
An oblique-angle RF magnetron sputtering technique could result in low-cost, reliable mass production of nano-scale optoelectronics.

1 September 2014

Techniques for highefficiency nitride LEDs on lithium gallate substrate
External quantum efficiency and light output power have been achieved that are comparable to best values in the field.

1 September 2014

Tailored last quantum barrier achieves more efficient, powerful GaN LEDs
External quantum efficiency and light output power have been boosted by 12% at 150mA injection current for a three-step graded device.

1 September 2014

Nano-scale gallium oxide high-voltage transistor demonstration
Easy production of nanomembranes of wide-bandgap material motivates research towards integration into multiple platforms.

1 September 2014

Stress bumps improve nitride semiconductor packaged transistor performance
Flip-chip technology has been used to introduce strain-enhancement for the first time, according to researchers.

1 September 2014

Optimizing ammonia-based MBE for gallium nitride electron mobility
University of California Santa Barbara and National Taiwan University have claimed the highest roomtemperature bulk GaN mobility reported to date.

1 September 2014

Deep UV LED research moving performance beyond 10% efficiency
Mike Cooke reports on progress made by a number of research teams.

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12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara

 
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