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22 May 2015
Packaged LED lighting revenue reached $6.6bn in 2014, with mid- to low-power LEDs comprising 70%

Cree, Lumileds and Osram comprise 65% of high-power sector

22 May 2015
IDT teams with EPC to integrate GaN and silicon

Partners to co-develop technology for wireless power, RF, and communications & computing infrastructure

20 May 2015
Gallium nitride HEMT-LED without metal interconnection

Reduction of parasitics decreases leakage current by three orders of magnitude.

20 May 2015
Northrop Grumman reports highest-power single-chip Ka-band power amplifier

40W 27-30GHz MMIC made using process being matured through Title III GaN Producibility Program

19 May 2015
Monolithic normally-off GaN switching devices with +5V threshold

Researchers combine normally-on transistor with Schottky barrier diode and capacitor clamp circuit.

19 May 2015
X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

GaN start-up aims to increase manufacturability and reduce costs

18 May 2015
Bevel junction termination extension for silicon carbide high voltage

Researchers achieve breakdown rating at 95% of theoretical limit.

18 May 2015
Cree registers for IPO of Power and RF subsidiary

Power and RF IPO to support future growth, while Cree focuses on LED and Lighting businesses

18 May 2015
Guerrilla RF completes $2m Series B funding round

Capital to launch additional products into mass production and generate self-sustaining cash flow

18 May 2015
Emcore's quarterly revenue rises a more-than-expected 3.5% to $19.1m

Break-even targeted at $18-19m per quarter as CATV drives growth

18 May 2015
Telecom transceiver market fell 7% in 2014 as 100G displaced 10G and 40G shipments

Growth suppressed until 2016 when CFP2-ACO hits market

18 May 2015
Data-center transceiver market to grow from $1.4bn in 2014 to $2.1bn by 2019

40G QSFP transceivers driving market, but 100GbE to be huge in 2016

15 May 2015
Qorvo's quarterly revenue up 46% year-on-year

Operating income target approached even in seasonally weak quarter

15 May 2015
IBM unveils fully integrated wavelength-multiplexed silicon photonics chip for 100Gb/s transceivers

Error-free operation demonstrated up to 32Gb/s from CMOS integrated monolithic nano-photonic transmitter'

14 May 2015
TowerJazz and UCSD demo first 256-element 60GHz silicon wafer-scale phased-array transmitter

TowerJazz's 0.18µm SiGe BiCMOS foundry process targeted at 5G base-stations with beam-forming capabilities

13 May 2015
Room-temperature wafer bonding for multi-junction III-V solar cells

Cells exhibit lowest electrical and optical losses ever reported, according to researchers.

13 May 2015
Veeco's Q1 shipments include $25m of deferred revenue for new EPIK MOCVD system

MOCVD systems shipping fastest since Q4/2011; guidance for full-year revenue growth raised from 30% to 35%

News Archive
RSS feeds News Features
21 May 2015
Vertical gallium nitride transistors with buried p-type current blocking

Device combines two-dimensional electron gas with vertical design for better electric field distribution.

RSS feeds Other News & Products
News Archive
RSS feeds Features
11 May 2015

High-mobility channels and moving beyond silicon
A number of significant changes are seemingly converging on 7nm — lithography, III-V NMOS, Ge PMOS? Here we focus on InGaAs NMOS research.

11 May 2015

Direct growth of indium gallium nitride on silicon substrate
Low-temperature plasma-assisted molecular beam epitaxy produces layers with an indium composition spanning the range from GaN to InN.

11 May 2015

Meeting manufacturing challenges for GaN-on-Si power IC devices
Veeco's chief technology officer and its senior director, MOCVD Technology discuss how systems with single-wafer chambers can address the transition of gallium nitride on silicon power devices from R&D to volume production.

11 May 2015

Implications for LEDs of the shift to large-diameter sapphire wafers
Faisal Nabulsi, Rubicon's senior VP, operations, explains technology and market trends for sapphire wafers over the last few years, and how larger diameters and patterned sapphire substrates are impacting LED manufacturing.

11 May 2015

Combining van der Waals technologies to make light-emitting diodes
Heterostructures unite transition metal dichalcogenide wells, hexagonal boron nitride barriers and graphene electrodes.

11 May 2015

Hole modulation for increased light output power from InGaN LEDs
Researchers report 25.6% increase in light output power when last quantum barrier is partially doped with magnesium.

11 May 2015

Ultraviolet random AlGaN nanowire array lasers
Researchers at Canada's McGill University have claimed the shortest wavelengths ever for an electrically injected semiconductor laser.

11 May 2015

Electrical injection of rolled-up heterostructure lasers
Semiconductor tubes could lead the way to coherent light sources for applications in chip-level optical communications integrated on a silicon platform.

Features Archive
RSS feeds Recruitment
14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)

12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara



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