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28 June 2016
Transfer printing of optically pumped III-V device on silicon-on-insulator

Researchers claim first processing of III-V optoelectronic component into silicon photonic integrated circuit using method.

24 June 2016
VSAT shipments to nearly double by 2020

GaN revenue in commercial satcom to grow by almost 300%, at 30% CAGR

23 June 2016
ICT-STREAMS EU project to develop transceiver and routing technologies for multi-terabit on-board chip-to-chip communications

III/V-on-Si in-plane lasers and silicon photonics target 1600% increase in throughput and 10-fold cut in energy consumption

22 June 2016
Probing potential to understand efficiency droop in InGaN LEDs

Researchers see shift of electron depletion from light-emitting region to non-radiative p-type contact region with increasing current.

22 June 2016
Kyma and Quora partner on GaN substrate materials

Low-defect GaN-on-QST template to be scaled to 8", and 4" and 6" free-standing GaN substrates to be created

22 June 2016
Monocrystal gains investment from Russia's Bank for Development VEB

Funding to aid sapphire production capacity expansion

21 June 2016
Finisar's growth in 100G datacom transceivers outweighs drop in legacy 10G telecom products

Delayed capital expenditure prolongs capacity constraints

21 June 2016
PeroBOOST project to research efficient, stable lead-free perovskite solar cells

Germany-based consortium to develop both vacuum and wet-chemical roll-to-roll coating

20 June 2016
Subwavelength micro-disk lasers on exact (001) silicon substrate

Performance comparable to that achieved on gallium arsenide substrate.

20 June 2016
RF power semiconductor market to grow at 15.4% CAGR, almost tripling from $10.57bn in 2015 to $31.26bn in 2022

Consumer sector largest, but aerospace & defense growing fastest

20 June 2016
GaAs device market to grow at 4.14% CAGR until 2020

Smartphone shipments to grow from 1.4 billion units in 2015 to over 2 billion by 2020

17 June 2016
Speed up for indium gallium nitride two-dimensional electron gas

Researchers claim record mobility with potential for high-power and high-frequency applications.

16 June 2016
ZSW regains thin-film solar cell efficiency record with 22.6% CIGS PV cell

Post-deposition treatment of surface with alkaline metal compounds boosts efficiency from 22%

15 June 2016
Thin-barrier quantum wells increase bandwidth of cyan light-emitting diode

Researchers claim 1GHz 3dB bandwidth record for visible-light LEDs.

15 June 2016
II-VI Inc sells certain RF assets of Anadigics for $45m

GaAs wafer fab retained for VCSEL fabrication

14 June 2016
Hybrid III-nitride and silicon carbide high-voltage power transistors

Device simulations suggest proposal could combine high mobility with higher OFF-state voltages.

14 June 2016
UTAC, Sarda and AT&S collaborate on small, fast GaAs-based voltage regulators to improve data-center energy efficiency

Sarda's Heterogeneous Integrated Power Stage to employ UTAC's 3D system-in-package based on AT&S' embedded component packaging technology

News Archive
RSS feeds News Features
29 June 2016
Bi-directional silicon carbide planar insulated-gate bipolar transistor

Researchers claim first experimental demonstration.

RSS feeds Other News & Products
News Archive
RSS feeds Features
13 June 2016

Looking to the future with III-V finFETs
Mike Cooke reports on recent separate TSMC- and IBM-led research.

13 June 2016

Wafer-scale lift-off of III-nitride epitaxial layers with boron nitride
New technique could reduce process times and costs compared with laser and chemical techniques.

13 June 2016

Fully vertical gallium nitride p-i-n diode grown on silicon substrate
Researchers claim the first demonstration of GaN vertical p-i-n diodes on silicon with high performance.

13 June 2016

III-nitride high-electron- mobility transistors on flexible tape
Researchers claim the first demonstration of 10GHz large-signal microwave power performance for flexible AlGaN-barrier HEMTs.


13 June 2016

Coplanar fabricated indium gallium nitride light-emitting diodes
Simpler technique cuts photolithography and metal deposition steps and offers potential path towards LED displays.

13 June 2016

Aluminium gallium nitride nanowire UV LED fabricated on metal foil
Researchers see development as first step towards scalable roll-to-roll manufacturing of nanomaterial based solid-state optoelectronics.

13 June 2016

Quantum well/barrier intermixing blue-shift of indium gallium phosphide
Thick silicon dioxide strain layer encourages thermal diffusion of aluminium to give largest shift reported for material system, according to researchers.

13 June 2016

SiO 2 charge inverter boosts hole injection in InGaN LEDs
External quantum efficiency increased 20% at 20mA current.

Features Archive
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22 July 2015

Senior Director of GaN Technology

22 July 2015

General Manager



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