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15 March 2018

GlobalFoundries extends silicon photonics roadmap to meet demand for data-center connectivity

First 90nm process on 300mm wafers qualified, and 45nm process scheduled for production in 2019

14 March 2018

TowerJazz announces first open foundry silicon photonics design kits with EDA tool support

Collaboration with Cadence, Synopsys and Lumerical enables platform for design of silicon photonics ICs for optical transceivers

14 March 2018

Finisar’s quarterly revenue growth in 100G QSFP28 transceivers for data centers compensates for lower China telecom sales

Ramp-up of VCSEL fab capacity in second-half 2018 to aid margin recovery

13 March 2018

Finisar launches first 400G QSFP-DD AOC and transceivers for switching and routing

Product portfolio also expanded with next-gen 100G serial QSFP28 transceiver and first 50G SFP56 transceivers

13 March 2018

RJR opens Phoenix manufacturing facility and HQ relocation

New HQ and factory enables capacity expansion for air-cavity plastic packages

12 March 2018

Lumentum to acquire Oclaro for $1.8bn

Oclaro stockholders to own 16% of combined company

12 March 2018

NeoPhotonics reports revenue up 8% in Q4 to $76.9m

Chinese customer inventories back down to normal, driving volumes, but price reduction to delay revenue growth and profit until second-half 2018

9 March 2018

Molex Ventures invests in Elenion to jointly develop, manufacture and promote silicon photonic-based products

Collaboration to develop interconnects scaling to 400Gbps and beyond

8 March 2018

Aixtron returned to annual profit in 2017 after sale of ALD/CVD product line

Continuing business to grow revenue 20-35% in 2018 to €230-260m

8 March 2018

Oclaro expands component and module portfolio into L-band to boost data-center interconnects to 600G

InP technology enables doubling of optical fiber capacity

8 March 2018

VueReal raises $10.5m on initial closing of Series A funding for micro-LED display technologies

Veeco’s technology expertise leveraged to speed micro-LED display adoption

7 March 2018
Vanadium dioxide enables III-nitride phase-transition field-effect transistor
Combination gives very low leakage and sub-thermionic steep-switching.
6 March 2018

Cree acquires Infineon RF Power business for €345m

LDMOS and GaN-on-SiC transistor and MMIC operation involves 260 staff in USA as well as Finland, Sweden, China and South Korea

News Archive
RSS feeds News Features
12 March 2018
Room-temperature electrically pumped indium gallium nitride microdisk laser
Researchers use ‘sandwich’ rather than ‘mushroom’ structure to claim first achievement of room-temperature electrical pumping on silicon substrate.
RSS feeds Other News & Products
News Archive
RSS feeds Features
1 March 2018

RF GaN market to grow at 22.9% CAGR over 2017–2023, boosted by 5G implementation
Threefold increase over next five years to be driven by telecoms and defense.

1 March 2018

‘First’ quasi-vertical gallium nitride trench MOSFET on 6-inch silicon
Researchers report 645V off-state breakdown capability for low-cost power electronics.

1 March 2018

IEMN demonstrates over 1400V breakdown on ALLOS’ new GaN-on-Si epi
With potential to compete with silicon carbide at lower cost, epi firm ALLOS seeks industrial partner on 1200V devices.

1 March 2018

III–N resonant tunneling diodes at room temperature and below
Findings represent a significant step in resonant tunneling, intersubband-based physics, and III-nitride quantum devices, according to team.

1 March 2018

Two-dimensional electronics for neuromorphic and other networking
Mike Cooke reports on work presented at December’s IEEE International Electron Devices Meeting in San Francisco.

1 March 2018

Integrating InGaAs transistor and III–V laser on silicon
Researchers in Singapore and the USA says that they have taken a step towards low-cost, low-power, high-speed optoelectronic integrated circuits.

1 March 2018

Reducing dislocations in GaAs on silicon templates
Researchers optimize GaAs grown by molecular beam epitaxy using on-axis gallium phosphide on silicon substrates.

1 March 2018

Deep ultraviolet photonic crystal of AlGaN nanowires
Researchers hope structure will overcome poor light extraction of present light-emitting diodes with short wavelength less than 280nm.

Features Archive


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