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Honeywell
4 July 2025

National Research Council of Canada signs MoU with Quebec’s C2MI and UK’s CSA Catapult

Strategic partnership strengthens Canadian and UK supply chains for growing AI compute capacity

3 July 2025
Improving mobility in InAs quantum wells on GaAs substrate
Surface smoothing to reduce step bunching could enable less expensive, superior alternative for quantum information and other applications.
3 July 2025

Aixtron leading project to increase energy efficiency in SiC layer deposition

Fraunhofer IISB’s silicon carbide expertise to combine with bimanu’s simulation models

3 July 2025

TSMC to cease GaN foundry production by end-July 2027 due to price pressure from Chinese rivals

Hsinchu Fab 5 being repurposed for advanced packaging, driven by AI applications

2 July 2025

Infineon on track to ship customer samples of GaN on 300mm wafers in Q4/2025

Silvaco’s Power Devices Solution to perform design technology co-optimization

2 July 2025

Navitas plans 200mm GaN production with PSMC

100V family to enter production in first-half 2026; 650V devices to transition from TSMC over next 12–24 months

1 July 2025

Wavetek deploys Silvaco’s Victory TCAD for GaN-based device development

Taiwan-based foundry targets high-performance connectivity applications in 5G, Wi-Fi and IoT markets

1 July 2025

Wolfspeed files for Chapter 11 bankruptcy as part of financial restructuring

$1.3bn in cash reserves to support customers and pay vendors, before emergence from Chapter 11 by Q3/2025

30 June 2025

CSconnected names first recipients for £1m Supply Chain Development Programme

Awards aim to strengthen and scale compound semiconductor supply chain in South Wales

30 June 2025

US-based GlobalFoundries investing extra $3bn for R&D on silicon photonics, advanced packaging and GaN

Total raised to $16bn, following $13bn announced last November to reshore chip manufacturing and accelerate AI growth

30 June 2025

UIUC reveals ‘efficiency cliff’ when LEDs are scaled to submicron dimensions

Peak external quantum efficiency stable from 20µm to 2µm but falls 70% down to 250nm

26 June 2025
AlYN-barrier GaN HEMTs for next generation devices
Researchers demonstrate low subthreshold swing and high on/off current ratio
Bruker
CS Clean
Vistec
News Features
12 June 2025
Tracking down sources of efficiency droop
Researchers modify ABC model to extract impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
5 June 2025
Monolithic HEMT-micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
22 May 2025
High-breakdown normally-off gallium oxide transistors
Researchers claim record for β-Ga2O3 MOSFETs on silicon substrate.
15 May 2025
Mass production QF-HVPE of GaN-on-GaN system
Researcher claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
8 May 2025
Reducing thresholds for L-band quantum dot laser diodes
Researchers claim record low 69A/cm2 threshold per QD layer
2 May 2025
First post-process diamond on GaN HEMT
Top-side heat extraction an alternate path for thermal management.
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Feature Downloads
31 May 2025

RISC processor based on 2D semiconductor FETs
Researchers combine 5900 MoS2 transistors in a 32-bit device.

31 May 2025

Toshiba and Global Power Technology accelerate SiC power device patent filings
Over 840 new patent families filed globally in Q1/2025, says Knowmade.

31 May 2025

ALE surface treatment for AlGaN Schottky barrier diodes
Using an atomic layer etching process significantly increases breakdown voltage and reduces current leaks.

31 May 2025

Enhancing GaN diode performance with p-oxides
Combining p-NiO and p-LiNiO yields low on-resistance and high breakdown voltage.

31 May 2025

First post-process diamond on GaN HEMT
Top-side heat extraction provides an alternate path for thermal management.

31 May 2025

GaN HEMT hits 85.2% PAE record at 2.45GHz
Fujitsu reduces the silicon and carbon contamination on free-standing substrate surface and in channel layer.

31 May 2025

Reducing thresholds for L-band quantum dot lasers
Researchers claim record low 69A/cm2 threshold per QD layer.

29 April 2025

Indium arsenide quantum dot VCSELs on InP(311)B substrate
Sony/NICT researchers claim first demonstration with communication and 3D sensing potential.

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