9 November 2020
Avoiding mobility collapse in high-voltage gallium nitride power devices
Highest mobility yet achieved —1470cm2/V-s — in very lightly doped n-type material suitable for thick vertical drift layers.
9 November 2020
Halogen-free vapor phase epitaxy for gallium nitride
Process sought for vertical power device high-voltage applications.
9 November 2020
UVC LED market growing at 61% CAGR to $2.5bn in 2025
The COVID-19 pandemic is driving interest in UVC LEDs for disinfection applications, says Yole Développement.
9 November 2020
Gallium nitride VCSEL with electrically conductive bottom mirror and contact
Nanoporous GaN has been used to create a distributed Bragg reflector structure
with a 39nm stop gap.
9 November 2020
VCSEL market to grow at 18.3% CAGR from $1bn in 2020 to $2.7bn in 2025
Telecom & infrastructure applications of vertical-cavity surface-emitting lasers will grow at 13.2% from $277m to $516m, reckons Yole Développement.
9 November 2020
Boron strain therapy for high-indium-content InGaAs layers
Researchers achieve the longest near-infrared PL wavelength so far of 1.4μm
9 November 2020
Large-area liquid-phase indium–V growth on SiO2
Hall measurements give mobility values comparable to epitaxial material.
9 November 2020
First claim of nitrogen-polar III–nitride tunnel-junction light-emitting diodes
Light intensity enhanced by 70% over non-tunnel-junction reference, and efficiency by 1.7x, at 20A/cm2.
