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23 July 2018

KAUST demonstrates nanowire GRINSCH diode for efficient UV-LED/laser applications

AlGaN-based graded-index separate-confinement heterostructure improves current injection efficiency and lowers sheet resistance and turn-on voltage of UV-LED

20 July 2018

UCLA develops defect-free boron arsenide as most efficient semiconductor material for thermal management

Better heat conduction from hotspots could boost computer chip performance and energy efficiency

20 July 2018

German team unveils mechanism of strain relaxation in (0001)-oriented III-nitride thin films and heterostructures

3D surface structures and high concentration of shear stress enables nucleation and spread of misfit dislocations in interfacial plane, while critical thickness of films depends on surface morphology and geometry

19 July 2018

Avancis reopens CIGS PV module production facility in South Korea

Ramping of production scheduled for first-half 2019

19 July 2018

Kaiam initiates strategic transceiver reserve for data-center applications

US Cloud data-center firms vulnerable to import restrictions on Chinese-made optical transceivers

19 July 2018

Micro-LED market to grow from $2.7bn in 2019 to $10.7bn in 2022, mainly in advanced displays

…but LCD and OLED technologies to continue to do well in smartphones, tablets and regular TVs

18 July 2018

InteGreat project yields new approaches to LED production

Replacing bond wire by thin flat metal connection moves emitter to surface of package

18 July 2018

NREL develops dual-chamber dynamic HVPE, targeting III-Vs solar cells at $0.20-0.80 per watt

Research continues to reduce both cost of substrate and chemical deposition process

17 July 2018

FLOSFIA demonstrates first gallium oxide normally-off MOSFET

Production of GaO series power devices to start with Schottky barrier diodes in TO220 packages, then MOSFETs

16 July 2018

Akoustis completes technology qualification for pre-production of single-crystal BAW RF filter products

Firm shifts focus to customer acquisition and high-volume manufacturing

16 July 2018

Analog Devices breaks ground on new global HQ

Facility to accommodate 450+ additional staff

12 July 2018
Speeding oscillation of double heterojunction bipolar transistors
Researchers use graded quaternary gallium indium arsenide antimonide to improve electron transport from base to collector.
12 July 2018

Imec demos hybrid FinFET-silicon photonics technology for ultra-low power optical I/O

40Gb/s NRZ optical modulation achieved with dynamic power consumption of 230fJ/bit in 0.025mm2 footprint

News Archive
RSS feeds News Features
18 July 2018
Improving aluminium gallium nitride transistor channel performance
Researchers in China enable higher drain current and lower off-leakage current to give ultrahigh on/off ratio of ~109.
RSS feeds Other News & Products
20 July 2018

Raytheon demos small X-band Low-Power Radar for precision approach guidance to multiple aircraft from extended range

20 July 2018

Nitride files patent infringement lawsuit against Digi-Key and RayVio in Tokyo

19 July 2018

NexGen using Aixtron’s AIX G5 HT MOCVD platform for vertical GaN-on-GaN transistors

19 July 2018

Lattice to discontinue millimetre-wave business to focus on core business

18 July 2018

SLD Laser achieves first UL certification for laser lighting

18 July 2018

Reedholm collaborates with Texas State University on production test of wide-bandgap devices

17 July 2018

Cree boosts output by 25% and efficacy by 9% with new version of XLamp XP-G2 LED

17 July 2018

Changelight orders further Aixtron AIX 2800G4-TM MOCVD systems to expand ROY fine-pitch and mini-LED capacity

17 July 2018

Qorvo completes offering of $500m senior notes

16 July 2018

Inphi samples first 100Gbps Porrima single-lambda PAM4 platform solution for QSFP28 and SFP-DD 100GBASE-DR/FR optical modules

16 July 2018

Custom MMIC hires Tom Rosa as CFO

16 July 2018

Infineon ships 5 billionth bulk-CMOS RF switch

12 July 2018

Riber receives order for MBE production system from China’s Acken Optoelectronics

12 July 2018

NREL/CAISO/First Solar joint grid reliability study wins Smarter E Award for Outstanding Project

12 July 2018

Monocrystal wins Russia’s Industria-2018 award

11 July 2018

Intel wins SEMI’s 2018 Award for the Americas for process and integration of silicon photonics transceiver

11 July 2018

Custom MMIC achieves ISO 9001:2015 certification

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3 July 2018

Improving magnesium doping of aluminium gallium nitride
Researchers seek better hole injection from molecular beam epitaxy material for deep ultraviolet light-emitting diodes.
3 July 2018

Near-UV optoelectronic transmitter/receiver system
III–nitride on silicon technology has been used to create an integrated platform for power monitoring, free-space light communication and wearable applications. Figure 2.
3 July 2018

Electro-absorption modulators for VCSELs
Modulation depth up to 68% achieved in integrated structure.
3 July 2018

Indium arsenide quantum dot laser on silicon from molecular beam epitaxy
Researchers claim first electrically pumped device using on-axis substrate.
3 July 2018

Platform for fully vertical GaN-on-silicon power devices
Record power performance claimed for GaN pn diodes on a foreign substrate.
3 July 2018

Normally-on gallium nitride nanowire transistors with inverted p-channel
Researchers create devices with +2.5V threshold voltage.
3 July 2018

Silicon carbide superjunction Schottky junction diodes
Researchers detail processing and analysis of the first functional devices.
3 July 2018

High-voltage gallium oxide transistors with more than 1kV breakdown
Enhancement-mode, normally-on operation achieved for first time.
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