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28 August 2014
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

28 August 2014
WDM market grows 10% year-on-year to record $2.6bn in Q2

DWDM long-haul equipment grows 18% while WDM metro grows just 4%

27 August 2014
Cree to invest $83m in 13% stake in Taiwanese LED maker Lextar

Lextar’s sapphire-based mid- and low-power LEDs to allow Cree to focus on high-power LEDs

26 August 2014
Transphorm partners with Tata on GaN-based solar inverters for India

First product to be launched in early 2015

25 August 2014
Scaling III-V integration to 300mm-diameter silicon and beyond

Direct wafer bonding method could open way to integrated high-mobility electronics and optoelectronics.

22 August 2014
Murata to acquire Peregrine for $465m

RF front-end and SOI technology to supplement Murata’s RF modules

21 August 2014
High-electron-mobility light-emitting devices for optoelectronics

Nitride semiconductor transistor heterostructure used as basis for light-emitting Schottky diodes and transistors.

21 August 2014
COB LED market to reach $9180m by 2020

Illumination applications comprise over 45% of market; Asia Pacific over 50% of market by region

21 August 2014
Fukuda Crystal Lab grows 2-inch scandium aluminium magnesium oxide crystal rivalling sapphire

Commercial launch as GaN blue LED substrate targeted for spring 2015

20 August 2014
Infineon to acquire International Rectifier for $3bn

Power semiconductor maker adds IR’s system expertise in power conversion while expanding in GaN-on-Si

20 August 2014
Oclaro’s 100G growth compensating for legacy 10G decline

Restructuring cuts losses, while 100G capacity increases target adjusted EBITDA breakeven at $100m quarterly revenue by September 2015 quarter

19 August 2014
GigOptix proposes to acquire memory product firm GSI for $161m

Merger to create high-speed communication semiconductor firm

19 August 2014
GaAs IC market to grow to $8bn in 2017

Power amplifier prices to rise from $2.90 to over $3.50, driven by LTE and AWS

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RSS feeds News Features
27 August 2014
Graded electron blocking improves III-nitride VCSEL performance

Varying AlGaN composition flattens barrier to hole injection while raising barrier to electron overflow.

RSS feeds Other News & Products
26 August 2014

Soraa adds UK distributor

News Archive
CS Mantech
RSS feeds Features
1 September 2014

Enabling silicon photonics through advances in III-V integration on silicon
EV Group’s Dr Martin Eibelhuber discusses a wafer-level die transfer process for bonding InP laser dies to a silicon photonics wafer, allowing volume production.

1 September 2014

Simplifying zinc oxide/ gallium nitride nano-rod LED fabrication
An oblique-angle RF magnetron sputtering technique could result in low-cost, reliable mass production of nano-scale optoelectronics.

1 September 2014

Techniques for highefficiency nitride LEDs on lithium gallate substrate
External quantum efficiency and light output power have been achieved that are comparable to best values in the field.

1 September 2014

Tailored last quantum barrier achieves more efficient, powerful GaN LEDs
External quantum efficiency and light output power have been boosted by 12% at 150mA injection current for a three-step graded device.

1 September 2014

Nano-scale gallium oxide high-voltage transistor demonstration
Easy production of nanomembranes of wide-bandgap material motivates research towards integration into multiple platforms.

1 September 2014

Stress bumps improve nitride semiconductor packaged transistor performance
Flip-chip technology has been used to introduce strain-enhancement for the first time, according to researchers.

1 September 2014

Optimizing ammonia-based MBE for gallium nitride electron mobility
University of California Santa Barbara and National Taiwan University have claimed the highest roomtemperature bulk GaN mobility reported to date.

1 September 2014

Deep UV LED research moving performance beyond 10% efficiency
Mike Cooke reports on progress made by a number of research teams.

Features Archive
RSS feeds Recruitment
12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara


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