Green and orange LEDs on porous GaN
2 September 2020
Smartphone shipments fall 15.7% year-on-year to 279.7 million in Q2
COVID-19 is impacting the market, but Huawei has overtaken Samsung, according to Informa.
2 September 2020
ALLOS transferring RF & power electronics patents & know-how to new GaN-on-Si entrant Azur
ALLOS is focusing on developing GaN-on-Si technology for micro-LEDs, notes Knowmade.
2 September 2020
GaN complementary logic on silicon using normally-off transistors
Researchers have used regrowth-free fabrication for the first demonstration of logic inverter operation at 300°C, along with record gain measurement at room temperature.
2 September 2020
Boosting mobility in InAlGaNbarrier heterostructure
Researchers have claimed the first high-electron-mobility transistor performance using a gallium nitride interlayer to improve material quality.
2 September 2020
Baking and plasmaenhanced low-temperature GaN atomic layer deposition
Sapphire substrate pretreatment enables single-crystal nucleation at 350°C with reduced impact of thermal expansion mismatch.
2 September 2020
Phosphor-free white LEDs for efficient displays and communications
Semi-polar bulk gallium nitride substrate enables partially polarized radiation and higher modulation bandwidth.
2 September 2020
Effectively releasing tensile stress in AlN thick film for low-defect-density AlN/sapphire template
A medium-temperature AlN interlayer has been used to reduce curvature and cracking in deep-ultraviolet LED growth.
2 September 2020
Carrier-localization engineering for DUV LEDs
Researchers use self-assembled sidewall quantum well structures to boost light output power and quantum efficiency of III–nitride material on sapphire.
