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28 May 2015
NXP to sell RF Power business to China's JAC Capital for $1.8bn

Deal to yield funds and approval for NXP's acquisition of Freescale

28 May 2015
NeoPhotonics' revenue grows 3% in Q1 to a record $81.4m, boosted by more-than-expected $12m from Emcore products

100G to drive 10% annual growth, while product pruning targets 35% gross margin model

27 May 2015
GaN Systems claims smallest 650V, 15A GaN transistor

Footprint of 5.0mm x 6.5mm 50% smaller than competing devices

27 May 2015
Rubicon's Q1 growth in sapphire revenue for mobile devices balanced by weakness in LED market

PSS ramp up in second-half 2015 plus polished wafer cost cutting targets positive cash flow by end-2015

26 May 2015
Cardiff University recruits UCLA's Huffaker to lead new research lab

Compound semiconductor expert appointed as new Chair in Advanced Engineering and Materials

26 May 2015
Soitec divests solar system business to refocus on core semiconductor activities

Engineered substrate firm retains four-junction Smart Cell technology, plus solar power plants for future disposal

26 May 2015
Smartphone sales grew 8% year-on-year in Q1 to $96bn as 4G market share surpasses 50%

…but unit growth year-on-year slows from 19% in Q4/2014 to 7% due to dip in China and Developed Asia

26 May 2015
Wireless backhaul RF component revenue to fall 2% over 2014-2019, despite unit growth

33% annual growth at 60GHz to drive GaN segment, but fiber-based backhaul to take market share

22 May 2015
Packaged LED lighting revenue reached $6.6bn in 2014, with mid- to low-power LEDs comprising 70%

Cree, Lumileds and Osram comprise 65% of high-power sector

22 May 2015
IDT teams with EPC to integrate GaN and silicon

Partners to co-develop technology for wireless power, RF, and communications & computing infrastructure

21 May 2015
Vertical gallium nitride transistors with buried p-type current blocking

Device combines two-dimensional electron gas with vertical design for better electric field distribution.

20 May 2015
Gallium nitride HEMT-LED without metal interconnection

Reduction of parasitics decreases leakage current by three orders of magnitude.

20 May 2015
Northrop Grumman reports highest-power single-chip Ka-band power amplifier

40W 27-30GHz MMIC made using process being matured through Title III GaN Producibility Program

19 May 2015
Monolithic normally-off GaN switching devices with +5V threshold

Researchers combine normally-on transistor with Schottky barrier diode and capacitor clamp circuit.

19 May 2015
X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

GaN start-up aims to increase manufacturability and reduce costs

18 May 2015
Bevel junction termination extension for silicon carbide high voltage

Researchers achieve breakdown rating at 95% of theoretical limit.

18 May 2015
Cree registers for IPO of Power and RF subsidiary

Power and RF IPO to support future growth, while Cree focuses on LED and Lighting businesses

News Archive
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27 May 2015
Metal-insulator-semiconductor gated hybrid anode GaN-on-Si diode

Reverse breakdown of more than 1.1kV with 10μA/mm leakage.

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11 May 2015

High-mobility channels and moving beyond silicon
A number of significant changes are seemingly converging on 7nm — lithography, III-V NMOS, Ge PMOS? Here we focus on InGaAs NMOS research.

11 May 2015

Direct growth of indium gallium nitride on silicon substrate
Low-temperature plasma-assisted molecular beam epitaxy produces layers with an indium composition spanning the range from GaN to InN.

11 May 2015

Meeting manufacturing challenges for GaN-on-Si power IC devices
Veeco's chief technology officer and its senior director, MOCVD Technology discuss how systems with single-wafer chambers can address the transition of gallium nitride on silicon power devices from R&D to volume production.

11 May 2015

Implications for LEDs of the shift to large-diameter sapphire wafers
Faisal Nabulsi, Rubicon's senior VP, operations, explains technology and market trends for sapphire wafers over the last few years, and how larger diameters and patterned sapphire substrates are impacting LED manufacturing.

11 May 2015

Combining van der Waals technologies to make light-emitting diodes
Heterostructures unite transition metal dichalcogenide wells, hexagonal boron nitride barriers and graphene electrodes.

11 May 2015

Hole modulation for increased light output power from InGaN LEDs
Researchers report 25.6% increase in light output power when last quantum barrier is partially doped with magnesium.

11 May 2015

Ultraviolet random AlGaN nanowire array lasers
Researchers at Canada's McGill University have claimed the shortest wavelengths ever for an electrically injected semiconductor laser.

11 May 2015

Electrical injection of rolled-up heterostructure lasers
Semiconductor tubes could lead the way to coherent light sources for applications in chip-level optical communications integrated on a silicon platform.

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14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)

12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara

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