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21 September 2017

GlobalFoundries launches 8SW RF SOI process for next-gen mobile and 5G applications

300mm SOI technology enables cost-effective, high-performance RF front-end modules for 4G LTE mobile and sub-6GHz 5G applications

20 September 2017

HKUST/UCSB team demonstrates record 1.3μm CW submilliamp-threshold quantum dot micro-lasers on silicon

Electrically pumped QD lasers follow team’s prior development of CW optically pumped micro-lasers

19 September 2017

glō orders Aixtron G5+ 8x150mm MOCVD system for micro-LED production

Sweden’s Lund University spin-off targets products from Californian plant in 2018

19 September 2017

QSFP-DD MSA Group releases 3.0 Hardware specification

Quad Small Form Factor Pluggable Double Density pluggable transceiver module spec updated

18 September 2017

CWDM8 MSA Group formed to support deployment of 400G 2km and 10km optical links in data centers

Industry consortium defining and promoting cost-effective, extended-reach 400G optical specs addressing intra- and inter-data-center applications

18 September 2017

4WDM MSA for 100G optical networks extended from 10km with specs for 20km and 40km reach

Market for 20 & 40km reach to rise to $300m by 2020, as 10km surpasses $1bn in 2017

18 September 2017

SFP-DD MSA releases spec for high-speed, high-density interface

The Small Form Factor Pluggable Double Density (SFP-DD) Multi Source Agreement (MSA) Group has completed the initial hardware specification and drawings for the SFP-DD pluggable interface designed to enable high-speed, high-density networking equipment.

18 September 2017

Ascatron launches its first SiC power device products

Swedish spin-off extends from epi supply to semi-fabless device producer

15 September 2017

DOE achieves SunShot’s 2020 utility-scale solar cost target of $0.06/kWh

$82m early-stage funding announced for CSP and power electronics as part of new 2030 focus on reliability, resilience and storage

14 September 2017

SDK expanding high-grade SiC epi production capacity from 3000 to 5000 wafers per month

Expanded facilities to begin operation in April 2018

14 September 2017

IQE extends production of VCSEL epiwafers with Aixtron AIX 2800G4-TM MOCVD systems

8x6” reactors to be installed in newly leased South Wales plant

14 September 2017

NCSU rolls out PRESiCE manufacturing process to open up SiC power device market to more companies

PowerAmerica-supported development qualified at X-Fab foundry

13 September 2017
Thinning p-type III-nitride layers to enhance effects of surface plasmons
Researchers claim record-high modulation bandwidth in c-plane light-emitting diodes.
13 September 2017

Norstel completes 150mm SiC n-type wafer development

Customer samples to be available by first-quarter 2018

13 September 2017

100G Lambda MSA to define specification for next-generation optical links

22 founding members collaborate to accelerate specification of 100Gbps per wavelength optical interfaces

13 September 2017

Evatec expanding Greater China operations to support rapid business growth

Thin-film equipment firm setting up own independent sales & service organizations in both Taiwan and China

12 September 2017

InnovateUK awards £1.1m to SUPER8 project to develop 200G 8-channel CWDM transceiver for hyper-scale cloud data-centers

CSC, Kaiam and CST to deliver commercial-grade solution for high-volume manufacturing within 30 months

12 September 2017

BluGlass’ upgraded BLG-300 chamber demonstrates targeted thickness uniformity for LED wafers up to 6”

LED efficiency demonstrated on par with prior RPCVD results, with significantly improved performance uniformity

12 September 2017

AXT completes purchase of new manufacturing facility in Dingxing, China

Staged relocation of GaAs manufacturing from Beijing begins

12 September 2017

JEDEC forms committee to set standards for wide-bandgap power semiconductors

JC-70 Wide Bandgap Power Electronic Conversion Semiconductors committee seeks participants

11 September 2017

Finisar’s quarterly revenue falls 4.4%, as lower 10G transceiver demand offsets growth in 100G QSFP28 transceivers

High-power VCSEL array production ramp delayed a quarter by change in manufacturing process

News Archive
RSS feeds News Features
15 September 2017
Aluminium gallium nitride transistors on silicon-on-insulator substrate
Devices show improved DC, dynamic and RF performance over those fabricated from material grown on high-resistivity silicon.
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1 September 2017

Gallium nitride implanted current-aperture vertical electron transistor
Researchers claim first demonstration of a device with 450V blocking voltage and respectable on-state characteristics.

1 September 2017

Pushing forward with compound semiconductor technologies
Mike Cooke reports on research presented at the Symposium on VLSI Technology.

1 September 2017

Amber quantum wells on InGaN pseudo-substrate
Layer transfer techniques enable strong long-wavelength photoluminescence.

1 September 2017

Finding the root of nanopipes in aluminium nitride on sapphire
Researchers reduce densities by treating precursor residues on reactor quartz-ware.

1 September 2017

Indium gallium nitride light-emitting diodes on thin industry-spec silicon
Researchers find ways to tackle bowing and threading dislocation trade-offs.

1 September 2017

Monolithic electrically injected microdisk lasers on silicon
Researchers in Russia claim first demonstration for a range of devices.

1 September 2017

Smart stacking III-V on crystal silicon solar cells to boost conversion
Palladium nanoparticle array connection enables thin-film on aluminium backsurface- field silicon tandem devices to reach 25% efficiency.

1 September 2017

Indium tin oxide metal-organic chemical vapor deposition for UV LEDs
Using MOCVD for the deposition of indium tin oxide transparent conductive electrodes increases 368nm-wavelength ultraviolet LED output power by 11.4% under 350mA current injection and 14.8% under 600mA current injection, it is found.

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