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5 December 2016
UNSW achieves record efficiency for perovskite solar cells

12.1% efficiency for 16cm2 cell, over 10 times bigger than existing record cell

5 December 2016
EPSRC awards £10m to create UK compound semiconductor manufacturing hub

Hub to focus on applying compound semiconductor expertise to silicon manufacturing techniques

5 December 2016
Obama bars Fujian Grand Chip's takeover of Aixtron's US business

Parties given 30 days to abandon acquisition.

5 December 2016
Oxford PV signs JDA with solar cell and module manufacturing industrial partner

JDA to focus on commercialization, scaling up silicon/perovskite tandem PV technology, and developing manufacturing processes

2 December 2016
Infineon opens GaN expansion of Epi Services fab in Mesa

Expansion adds 11,500ft2 and creates over 20 jobs

1 December 2016
Continuous-wave room-temperature broad-area quantum cascade lasers

Researchers reduce number of cascades to compensate for vertical-only heat dissipation.

1 December 2016
POET grows revenue in Q3, but operational challenges at DenseLight acquisition delay production

Second-half 2016 revenue guidance lowered from $2m to $1.6-1.8m

28 November 2016
Persistent photoconductivity in nitride semiconductor UV photodetectors

Researchers reduce effect by three orders of magnitude from 39 hours to 24 seconds by localized Joule heating.

30 November 2016
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

29 November 2016
BluGlass and IQE partner

Nitride films for electronic devices to be co-developed on both silicon and IQE's cREO technology using BluGlass' low-temperature RPCVD

29 November 2016
EpiWorks breaks ground on production expansion and wafer characterization and test lab

Capacity to quadruple over next three years

29 November 2016
High-brightness LED production value to grow at 3.7% CAGR to $15.25bn in 2021

Lighting and automotive lighting/displays to drive growth as backlighting declines

29 November 2016
VCSEL market to grow at 22.3% CAGR to $4728.8m by 2024

Europe accounts for 30% of market, but Asia-Pacific to grow at 23.1% CAGR

25 November 2016
Black polycrystalline diamond transistors with high breakdown

Despite material imperfections such as cracks and grain boundaries, devices also achieve high maximum drain currents.

23 November 2016
Crystal orientation and gallium nitride trench MOSFET performance

Non-polar m-plane interface boosts doubles drain current over a-plane devices.

22 November 2016
MACOM to acquire Applied Micro Circuits Corp for $770m

Acquisition to speed MACOM's growth in optical technologies for enterprise and cloud data-center customers.

21 November 2016
Normally-off gallium nitride power transistor on (110) silicon

Researchers see high potential for monolithic wafer-level integration of GaN power and CMOS electronics in first demonstration of technology.

21 November 2016
EC project COSMICC to develop silicon photonics-based transceivers for low-cost, high-speed datacoms

Leti-led Horizon 2020 project combines CMOS electronics and silicon photonics with high-throughput, fiber-attachment techniques for beyond 1Tb/s

21 November 2016
CFIUS advises US President to prohibit Grand Chip's takeover of Aixtron

Grand Chip and Aixtron refuse request to abandon takeover, but aim to resolve US national security concerns

News Archive
RSS feeds News Features
2 December 2016
Multi-functional metamorphic buffer for InAs QW laser diodes on InP

Structure combines lattice-mismatch bridging and bottom cladding for optical confinement.

RSS feeds Other News & Products
News Archive
RSS feeds Features
2 December 2016

Silicon carbide technology preferred over traditional silicon technology
Improvement in power conversion by using silicon carbide will increase demand for the technology in developing countries, says Allied Market Research.

2 December 2016

Integrating gallium nitride LED with silicon drive transistor
Researchers wafer bond silicon-on-insulator layers to GaN-on-sapphire LED substrate and fabricate MOSFETs.

2 December 2016

Low-resistance tunnel junction boosts InGaN nanowire LED performance
Turn-on voltage reduced to 2.9V by inserting aluminium layer between heavily doped regions, reducing tunneling width.

2 December 2016

Photo-electro-chemical lift-off of free-standing gallium nitride
Batch process causes no damage and is compatible with growth substrate, enabling reuse and process cost reduction.

2 December 2016

Seeking source of green gap in InGaN light-emitting diodes
Findings exclude inferior InGaN material quality from the list of potential causes.

2 December 2016

China: the future of world trade and the semiconductor industry
Mike Cooke looks at recent political developments in the light of frustrated Chinese attempts to take over western semiconductor companies.

2 December 2016

Extending interband cascade VCSEL wavelengths to 3.4μm
Electrically pumped device demonstrates pulsed threshold current density as low as 390A/cm2.

2 December 2016

Indium phosphide on silicon template for optoelectronics
Researchers use wafer bonding to create platform for 1.2μm-wavelength laser diode growth and fabrication.

Features Archive
RSS feeds Recruitment
3 August 2016

Project Development Officer
Cardiff School of Engineering

5 August 2016

Senior Cleanroom Process Engineer
Cardiff School of Engineering



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