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5 March 2015
NeoPhotonics reports record Q4 revenue of $79m, despite pruning low-margin products, driven by growth in 100G

Cost control and product portfolio optimization yield record income

5 March 2015
Skysilicon releases China's first GaN power transistor on 8-inch substrate

600V/10A MISHEMT fabricated on 8-inch GaN-on-Si

4 March 2015
Chalmers' record 44Gbps D-band wireless transmission achieved using Teledyne InP DHBT process

Record since extended to 48Gbps, with 100Gbps targeted

4 March 2015
VCSEL-based automotive LiDAR firm TriLumina closes $8.5m Series A funding round

Stage 1 Ventures leads investment to drive product development and commercialization

3 March 2015
Raytheon UK delivering SiC components for use in current-limiting diode project

Rolls-Royce-led project aims to protect aircraft electronics against lightning strikes

3 March 2015
Power semiconductor device market grew in 2014 after two years of stagnation

CAGR of 6.9% to $17bn in 2020, driven by IGBT improvement and SiC & GaN adoption

3 March 2015
JDSU to spin off CCOP business as Lumentum by Q3/2015; NE, SE and OSP businesses to become Viavi

CFO Rex Jackson to leave on 30 September after spin-off

2 March 2015
Tyndall to lead EU Horizon 2020-funded €5.2m project developing thermally intelligent smart photonics systems

Intelligent circuit that can thermally control its own operations to boost photonic device data rate

2 March 2015
Peregrine and Murata launch 2015 UltraCMOS Global 1 Initiative

Murata filters and packaging integrated into RF front-ends

2 March 2015
NXP to acquire Freescale for $11.8bn

Annual cost synergies of $500m expected

2 March 2015
5N Plus grows 10.7% in 2014, despite Q4 slump in commodity pricing

5N Plus grows 10.7% in 2014, despite Q4 slump in commodity pricing

27 February 2015
Imec, Murata and Huawei report 0.18μm RF SOI CMOS electrical balance duplexer

Duplexer paves the way to integrated solution for TX-to-RX isolation in reconfigurable, multi-band front-end modules

27 February 2015
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

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RSS feeds News Features
4 March 2015
Silver nanowires and gallium nitride increase efficiency of Schottky UV-LEDs

Researchers believe structure could lead to low-cost device and nano-optic applications.

RSS feeds Other News & Products
5 March 2015

Advanced Photonix and Luna expect to close merger in May

5 March 2015

Excelitas unveils UV LED curing system for inkjet printing, edge bonding and small component assembly

4 March 2015

Panasonic and Sansha Electric develop compact SiC power module with low operating loss

4 March 2015

ROHM's SiC MOSFETs used in ultra-high-voltage pulse generators

4 March 2015

Skyworks ramps SkyOne Mini for LTE smartphones

3 March 2015

SemiLEDs launches series phosphor-converted amber, red and green LED chips using ReadyWhite technology

3 March 2015

Anadigics' WiFi front-end IC selected for Huawei's Honor 4X smartphone

3 March 2015

Taiwan's Episil manufactures SiC-based high-power management devices using Aixtron CVD system

3 March 2015

Skyworks unveils next-generation diversity receive modules

3 March 2015

Keysight launches Infiniium V-Series InP-based oscilloscopes for analysis, debug of high-speed IC designs

2 March 2015

Inphi receives NeoPhotonics' 2014 Supplier of the Year award

2 March 2015

Oclaro ramps production of 100G LR4 CFP4 transceivers

2 March 2015

GigOptix inaugurates Japan HQ and appoints director of Asia Pacific Sales

2 March 2015

QD Laser and NanoQuine unveil prototype of retina imaging laser eyewear for low-vision care

2 March 2015

Skyworks begins volume production of SkyOne Ultra front-end modules

2 March 2015

LED lighting market to grow at CAGR of 25.89% to 2019

2 March 2015

General lighting LED lamps installations in Europe to reach 2.9 billion units in 2019

2 March 2015

Lumileds named Illumineer of the Year for LUXEON CoB LED with CrispWhite Technology

2 March 2015

Infinera 500G super-channels deployed across RETN's pan-European network

27 February 2015

Custom MMIC launches x2 frequency multiplier with high output power and low spur levels

26 February 2015

Fairview launches family of 0.5-40GHz broadband RF amplifiers

26 February 2015

First Solar completes Atlas 25+ testing program

25 February 2015

Qorvo showcasing expanding RF portfolio at Mobile World Congress

25 February 2015

Solar Frontier's residential and commercial systems chosen for UEI's self-consumption storage device

25 February 2015

First Solar commits to 5GW investment in India

25 February 2015

First Solar and SunPower to partner to form joint venture

24 February 2015

Desert Sunlight Solar Farm 550MW plant starts commercial operation

24 February 2015

KLA-Tencor extends 5D patterning control solution with overlay and film process control systems

News Archive
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RSS feeds Features
27 February 2015

Power & speed highlights for compound semiconductors
Mike Cooke reports on presentations given at the recent IEEE International Electron Devices Meeting.
27 February 2015

Millimeter-wave performance of gallium nitride transistors on silicon substrates
The first large-signal measurements at 94GHz have been reported for AlInN/GaN HEMTs on high-resistance silicon.
27 February 2015

Boron nitride releases GaN transistors from self-heating degradation
Transfer to copper plate improves thermal dissipation and increases drain current at high bias.
27 February 2015

Double heterostructure with InGaN channel demonstrates high mobility
InGaN channels have been developed with better high-temperature performance than double heterostructures with GaN channels.
27 February 2015

Resistance memory with all-nitride structure
Research could lead to monolithic transistor–resistor memory devices using III-nitride high-electron-mobility transistors.
27 February 2015

Staircase quantum barriers to improve LED efficiency at high current
Efficiency droop of only 3.3% at 200A/cm2 current density has been achieved in a 450nm-wavelength InGaN LED.

27 February 2015

Thicker InGaN wells enabled by semi-polar (3031) substrate
UCSB produces device with less efficiency droop at high currents and temperatures.
27 February 2015

First 250nm-wavelength nanowire LEDs claimed
Polarization effects used to improve hole density and injection.
Features Archive
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14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)
12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara
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