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1 October 2014
Airlight and IBM partner to commercialize HCPVT solar system by 2017

2000-sun high-concentration photovoltaic thermal system to generate 12kW of electrical power and 20kW of heat

30 September 2014
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

29 September 2014
IntelliEPI acquires Soitec's GaAs epi business

IntelliEPI to widen customer base including automotive radar market, as Soitec focuses on key products

25 September 2014
ON Semiconductor and Transphorm to co-develop and co-market GaN-based power systems

Low-voltage MOSFET silicon cascoded switch plus GaN HEMT transistors to be co-packaged at ON Semiconductor

25 September 2014
Pulsed RF power semiconductor device markets to exceed $300m by 2019

GaN driving market growth for devices above 5W operating up to 18GHz

25 September 2014
GaN micro-rods grown on graphene yield flexible LEDs

Catalyst-free MOCVD process promises bendable and stretchable electronic and optoelectronic devices

24 September 2014
Plessey adds in-house GaN-on-Si LED assembly line

Line to provide engineering samples and pilot builds ahead of full production

23 September 2014
TI launches its first 100G TIA

Transimpedance amplifier complements firm’s laser drivers and limiting amplifiers

23 September 2014
Iridium qualifies Spectrolab-powered solar panel system for NEXT satellites

New, larger triple-junction solar cells manufactured from 6-inch wafers

23 September 2014
Oclaro expanding manufacturing capacity for 100G client-side pluggable optics

Second-generation CFP2 transceiver unveiled

22 September 2014
ZSW raises thin-film PV efficiency record from 21% to 21.7%

CIGS’ lead over multicrystalline solar cells extended to 1.3%

22 September 2014
SDK boosts 6” SiC epi production capacity for power devices from 400 to 1100 wafers per month

Shipment of new-grade SiC epi with fewer defects and higher uniformity to start in October

18 September 2014
Dow Corning expands Prime Grade SiC wafer portfolio from 100mm to 150mm diameter

Prime Grade portfolio on show at ECSCRM 2014 in Grenoble

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24 September 2014
Single-crystal gallium arsenide on metal foil

Technique could open way to low-cost high-efficiency solar cells with roll-to-roll production.

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RSS feeds Features
1 October 2014

Working toward lasers for on-chip global interconnects
Tokyo Institute of Technology has claimed the first RT-CW operation of a lateral-current-injection GaInAsP membrane FP laser on silicon.

1 October 2014

Toshiba red InGaN LED reaches 1.1mW at 20mA
Highest power output achieved so far for such devices.

1 October 2014

Increasing light output from InGaN LEDs on silicon wafer
Substrate removal from under device reduces light absorption for six-fold increase in emission slope.

1 October 2014

MOCVD trends helping to drive down LED chip costs
Veeco’s Sudhakar Raman explains how a new generation of processing equipment is cutting the cost of manufacturing high-brightness LEDs by improving the yield and productivity of the MOCVD process.

1 October 2014

Band engineering for improved photo-electro-chemical etch
A band-engineering technique has been developed to improve photo-electro-chemical etch of nitride materials for optoelectronic and micro-electro-mechanical system applications.

1 October 2014

Ultrathin transitionmetal dichalcogenides and 2D optoelectronics
A strong coupling of light and electrons and holes in ultrathin transition-metal dichalcogenides has opened prospects for efficient solar cells.

1 October 2014

Aspect ratio trapping to improve InGaAs quality on silicon substrates
ART technique eliminates GaAs anti-phase boundaries at a relatively low aspect ratio of 1.3.

1 October 2014

Gallium nitride thin-film transistors produced at less than 250°C
Low-temperature process suggests potential for flexible/transparent electronics application.

Features Archive
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12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara


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