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26 August 2015
Microwave anneal process for gallium nitride transistors

On/off current ratios, lower gate leakage, and maximum drain current improved compared with rapid thermal anneal.

26 August 2015
Qorvo to double GaN capacity after scaling from 4- to 6-inch wafers

GaN-on-SiC using 6-inch wafers enables higher-volume, lower-cost GaN applications

26 August 2015
RayVio expands UV LED manufacturing capacity and global sales force

Expansion to reduce cycle time and produce 2 million LED units annually

25 August 2015
Sweden's Midsummer granted SEK10m loan from regional development agency Almi

Loan to fund continued development of CIGS solar cell production equipment

25 August 2015
TSMC terminating CIGS PV manufacturing

Late market entry and lack of economies of scale led to substantial cost disadvantage

25 August 2015
Kwansei Gakuin University uses Renishaw Raman microscope to study defects in SiC

Raman microscopy complements HR-XRD with higher spatial resolution.

24 August 2015
POET enters into VCSEL manufacturing services agreement with Anadigics

POET to transfer technology to Anadigics from Q4, for demonstration of integrated VCSEL prototypes in second-quarter 2016.

21 August 2015
GE and SUNY Poly developing SiC power electronics packaging facility at QUAD C

GE to be anchor tenant of Computer Chip Commercialization Center in next phase of New York governor's $1.5bn Nano Utica initiative

21 August 2015
Peregrine enhances intelligent integration by adding monolithic phase and amplitude control at microwave frequencies

Capabilities of MPAC products applied in other integrated products

19 August 2015
Reducing damage in gallium nitride inductively coupled plasma etch

Process avoids photoluminescence degradation to within 71nm of multiple quantum well, and enables air-gap cladding alternative in laser diode.

19 August 2015
Transfer of ALLOS' 150 and 200mm GaN-on-Si epi technology to Epistar concluded in under 6 months

Reproducible crystal quality achieved with total dislocation density of 2×108cm2

19 August 2015
2D transistor made from dual-phase transition-metal dichalcogenide crystal

Laser-induced phase patterning yields ohmic homojunction in molybdenum ditelluride

18 August 2015
Optical network equipment spending in Europe up 8% year-on-year in Q2

Global market flat year-on-year, but up 22% on Q1

14 August 2015
Cree's quarterly LED product revenue falls 21% amidst restructuring

Consolidation of chip fabs focuses on high-power LEDs while outsourcing mid-power LEDs

13 August 2015
Improving aluminium nitride barriers with low-temperature pulsed MOCVD

Lower growth temperature results in better two-dimensional electron gas at AlN/GaN barrier/buffer interface, promising higher-performance transistors.

13 August 2015
Peregrine expands into third building at San Diego HQ

High-performance analog and mobile wireless solutions business units expanding following acquisition by Murata

13 August 2015
Stion purchases $5.8m of Avaco's tools

CIGS PV module production capacity to double to 120MW/year

13 August 2015
Skyworks expands filter operations in Japan

Osaka facility to house design, development and manufacturing, complementing front-end solutions and assembly, test & packaging

News Archive
RSS feeds News Features
28 August 2015
High-performance gallium nitride on low-resistance silicon

Researchers claim highest frequency performance to date for transistors on LR Si substrate.

RSS feeds Other News & Products
News Archive
RSS feeds Features
3 August 2015

Current gain in III-nitride hot-electron transistors
UCSB has implemented emitter and collector barriers using AlN/InGaN polarization dipole barriers.

3 August 2015

Vertical gallium nitride transistors with buried p-type current blocking
Device developed by UCSB and Arizona State University combines twodimensional electron gas with vertical design for better electric field distribution.

3 August 2015

Toyoda Gosei achieves specific on-resistance of less than 2mΩ-cm2
Reducing on-resistance in vertical gallium nitride MOSFETs.

3 August 2015

Gallium nitride HEMT-LED without metal interconnection
Hong Kong University of Science and Technology shows how a reduction in parasitics decreases leakage current by three orders of magnitude.

3 August 2015

Improving gallium nitride LED material quality using carbon nanotubes
Output power increased from 194mW to 266mW by using three layers of CNTs on conventional sapphire substrates.

3 August 2015

Enhancing optical confinement for III-nitride semiconductor laser diodes
Mike Cooke reports on research attempting to improve waveguide and cladding layers for blue 450nm wavelength devices.

3 August 2015

Laser diodes for mid-IR spectroscopy
Mike Cooke reports on developments of devices around the 3μm wavelength carbon-hydrogen bond fingerprint region.

3 August 2015

Room-temperature wafer bonding for multi-junction III-V solar cells
AlGaAs and InGaAs cells exhibit lowest electrical and optical losses ever reported.

Features Archive
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22 July 2015

Senior Director of GaN Technology

22 July 2015

General Manager



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