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20 November 2019

CSA Catapult to deliver energy-efficient intelligent rail system for Network Rail as part of Innovate UK-backed consortium

South Wales-based CSA Catapult collaborating on proof-of-concept to support Network Rail’s predict-and-prevent maintenance strategy

19 November 2019

Cree and ST expand and extend silicon carbide wafer supply agreement

Doubling of value to $500m addresses rapidly growing demand for SiC power devices, particularly in automotive and industrial applications

19 November 2019

Nexperia enters GaN FET market

650V GaN-on-silicon device targeted at high-volume EV, communication infrastructure and industrial sectors

18 November 2019

Cree and ABB partner on silicon carbide for automotive and industrial applications

Cree to broaden customer base as ABB Power Grids business accelerates entry into EV sector

18 November 2019

IQE cuts 2019 revenue guidance from £140-160m to £136-142m due to inventory reductions by US RF chip customers

Return to growth beyond Q1/2020 to be driven by content gains in 3D sensing, GaN demand for 5G, and expanding Asian markets as supply chains localize

15 November 2019

Germany-funded ‘ForMikro-GoNext’ project investigating vertical gallium oxide devices for power electronics

Leibniz-IKZ, FBH, University of Bremen, ABB Power Grids Switzerland and Aixtron partner on four-year, €2m β-Ga2O3 project

14 November 2019
Improving metal-organic growth of aluminium nitride on silicon carbide
Ammonia pretreatment reduces threading dislocations in potential template for more efficient deep-ultraviolet light-emitting diodes.
14 November 2019

Skyworks’ quarterly revenue rebounds by 8%, or 20% excluding export-restricted Huawei

Product ramps, content gains and expansion in customers, end markets and applications to drive further growth

13 November 2019

NeoPhotonics’ 13% revenue growth in Q3 drives return to profit, despite US export restrictions on Huawei

Growth driven by strong end-customer demand in Western metro and data-center interconnect markets, 400G-and-faster products, and strength in China

12 November 2019

University of Illinois reports thermal conductivity dependence on dislocation density of various GaN materials

Work targets thermal management of GaN-based devices grown on foreign substrates with high dislocation densities

11 November 2019

AXT’s Q3 revenue hit by China-related absence of expected data-center and PON market growth

InP and GaAs demand expected to bounce back in 2020

11 November 2019

Veeco’s revenue rebounds in Q3 as 300mm GaN MOCVD cluster system accepted for pilot production

Firm re-enters profitability, while OpEx to be cut by $4m per quarter by Q3/2020

8 November 2019

US Army and Rice University target diamond materials as ultrawide-bandgap successor to GaN in improved RF electronics

Facility to be built at Rice for growing ultrapure diamond films and heterostructures for RF electronic prototypes

7 November 2019
Indium phosphide template for laser and silicon-on-insulator integration
Researchers combine wafer bonding and direct epitaxy on silicon approaches to reduce threading dislocation density by two orders of magnitude.
7 November 2019

Qorvo’s quarterly revenue well above guidance, driven by integration-related content gains in 5G mobiles

Infrastructure & Defense Products to return to growth in December quarter

4 November 2019

Cree’s LED revenue down 22% year-on-year due to soft market and China trade and tariff concerns

Customers cautious as trade concerns linger, 5G rollout is delayed and China EV sales are down

4 November 2019

Cardiff uses LEEM-MBE to observe metastability on GaAs surfaces

Cardiff-ICS team to examine if phenomenon can be used to influence growth of device structures

News Archive
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15 November 2019
Indium gallium nitride surface-emitting superluminescent light diodes
Researchers claim record high light output power of 2.2W in pulsed operations.
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News Archive
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1 November 2019

Monolithic AC InGaN light-emitting chips
Circuit integrates Schottky barrier diode rectifier with 28 LEDs operating at 110V root-mean-square at 60Hz.

1 November 2019

Improving white LED luminous efficiency CRI
Researchers combine phosphors, quantum dots and metal nanoparticles to fill out visible spectrum through a range of physical mechanisms and interactions.

1 November 2019

Micro-LED technologies make significant progress over last 18 months
But challenges remain before ramping up for large-volume consumer applications, says Yole Développement.

1 November 2019

Implementing III–nitride light-emitting devices on silicon substrates
Mike Cooke reports on recent advances in putting indium gallium nitride laser, superluminescent and light-emitting diodes on silicon using epitaxy and wafer-bonding technologies.

1 November 2019

High-frequency InAlN barrier transistors on silicon
Researchers claim record 16GHz-μm cut-off-gate-length product for gallium nitride channel HEMTs.

1 November 2019

Gadolinium oxide gate insulation for gallium nitride channel transistors
Use of single-crystalline material reduces current leakage by up to six orders of magnitude compared with a Schottky junction.

1 November 2019

Indium gallium arsenide one-transistor dynamic random access memory
Researchers hope for devices with lower operating voltages and lower energy consumption.

1 November 2019

Vertical gallium oxide Schottky barrier diodes with improved performance
Small-angle beveled field plate increases power electronics Baliga figure of merit to 0.6GW/cm2, matching gallium nitride and silicon carbide devices.

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