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24 April 2017

Nitride Solutions closes $2.75m funding round

Production capacity and staffing to be ramped up to meet demand for AlN substrates

21 April 2017

LEDs rising from 60% of overall lighting market in 2016 then 80% in 2020 and 98% by 2025

LED lighting market grew 18.1% to $47,303m in 2016

20 April 2017

AIM Photonics strikes IP licensing deal with new consortium member IBM

IBM joins initiative to enable advanced packaging designs and manufacturing of photonic integrated circuits

19 April 2017
Improving vertical gallium nitride Schottky barrier diodes
Devices combine lowest reported turn-on voltage and low on-resistance with near ideal diode behavior.
19 April 2017

Sivers IMA acquiring CST Global

Wireless component supplier gains opto portfolio

18 April 2017

LED lamp unit shipments to rise from 441.7 million to 783.9 million in 2026

Longer lifespan, increased efficacy and market penetration of LEDs contributing to decline of overall commercial lighting market

18 April 2017

Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

13 April 2017

SemiLEDs reduces cash burn, despite revenue falling by a third

Revenue to rebound slightly next quarter

11 April 2017

Imec and Solliance boost efficiency for 4cm x 4cm perovskite PV module to 12.4%

Eight cells connected in series using low-area-loss interconnection technology

10 April 2017
Fluorinated graphene passivation for aluminium gallium nitride transistors
Technique improves performance under direct current and pulsed operation, reducing current collapse.
7 April 2017
Gallium nitride fin transistor with high linearity and output power
Researchers see significant advantages of tri-gate configuration over planar devices for microwave power applications
7 April 2017

Enablence to raise $6m in additional financing

PLC-based optical component maker still aiming to raise $10m in total, after terminating merger with Esrey Energy

6 April 2017
Direct growth of III-V material on silicon for 1.55μm quantum dot lasers
Researchers demonstrate optically pumped microdisk devices with low threshold power and high characteristic temperature.
6 April 2017

Compound Semiconductor Applications Catapult launches non-executive board

Understanding of UK R&D plus targeted end-user markets to aid commercialization

6 April 2017

ColorChip raises an extra $17m, boosting latest financing round to $37m

Optical transceiver firm to expand manufacturing capabilities and extend PAM4-enabled product range to 200G and 400G

6 April 2017

First Solar considering sale of stake in 8point3 Energy Partners

Resources and capital to be focused on transition to Series 6 CdTe PV module production

5 April 2017
Direct hole injection plugs for indium gallium nitride light-emitting diodes
Technique can increase light output power and wall-plug efficiency at higher current.
4 April 2017

POET’s losses rise after lower-than-expected revenue in second-half 2016

Prototype low-loss micro-mux and demux in Q2/2017 to lead to customer sampling in Q3

3 April 2017

Ushio America and Necsel IP announce integration

Merged firm to offer light sources spanning lamps, LEDs, lasers, drivers, systems and services

3 April 2017

Synopsys releases RSoft Photonic Component Design Suite version 2017.03 for opto device analysis

Updated interface with Sentaurus TCAD products and new high-speed optical absorption calculation now available

31 March 2017
Monolithic amber-green-blue nanopillar light-emitting diodes
Strain engineering could give viable approach for micro-displays based on indium gallium nitride technology with existing manufacturing infrastructure.
News Archive
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24 April 2017
Alcohol-based digital etch on arsenide and antimonide III-V semiconductors
Technique enables first demonstration on antimonides, according to researchers.
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21 April 2017

Vertical gallium nitride moves for power electronics
Mike Cooke reports on transistor and diode performance enabled by vertical device designs.

21 April 2017

Gallium nitride on silicon on insulator metalorganic vapor phase epitaxy
A buried oxide layer has been used to increase the breakdown voltage from vertical through-wafer current by 400V.

21 April 2017

N-polar gallium nitride gives record power density and efficiency at 94GHz
High-power solid-state transmitter applications could benefit through greater integration with fewer stages at both chip and system levels.

21 April 2017

Bulk aluminium nitride platform for gallium nitride high voltage and power
Researchers claim first measurements on quantum well field-effect transistors achieve record high drain current of 2A/mm.

21 April 2017

Silicon and III-nitride high-voltage monolithic cascode diode
Combining pn diode and metal-insulator-semiconductor high-electron-mobility transistor gives two-orders-of-magnitude lower reverse bias leakage.

21 April 2017

Bulk GaN substrate market growing at 10% CAGR to $100m in 2022, from 60,000 wafers in 2016
Three Japanese players hold 85% of market driven by laser diodes and HB-LEDs.

21 April 2017

Gallium nitride quantum dot emission at 232nm deep ultraviolet
Cornell University and University of Notre Dame claim the shortest-wavelength electroluminescence so far in the deep ultraviolet for GaN active material.

21 April 2017

Aluminium indium gallium nitride electron-blocking layers
Quaternary III-nitride improves light output power, droop, forward voltage, and wall-plug efficiency in blue LEDs.

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3 August 2016

Project Development Officer
Cardiff School of Engineering

5 August 2016

Senior Cleanroom Process Engineer
Cardiff School of Engineering



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