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31 July 2014
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

30 July 2014
Analog Devices completes acquisition of Hittite

ADI’s new RF and Microwave Group led by Hittite’s former president & CEO

30 July 2014
RFMD's revenue grows 23% quarter-to-quarter to record $316.3m

3G/4G rises from 85% to over 90% of CPG revenue as 2G falls below 10%

30 July 2014
Raytheon to provide power systems for More Electric Aircraft

Raytheon UK’s HiTSiC technology involved in Aerospace Growth Partnership projects

29 July 2014
Aixtron's orders rise for fifth consecutive quarter

Phase Two of 5-Point-Program underway; launch of next-gen MOCVD tool due in second-half 2014

29 July 2014
GigOptix’s revenue grows more-than-expected 9% in Q2 to $8m, as datacoms exceeds telecom for first time

Full-year revenue guidance raised from 10% growth to 12%

28 July 2014
Automotive industry playing increasing role in opto component market

Penetration of LEDs in car headlamps rising from 2% in 2013 to 17% in 2019

24 July 2014
Toshiba red InGaN LED achieves 1.1mW at 20mA injection

Highest power output so far for such devices, according to researchers.

24 July 2014
Riber's first-half revenue down 39% year-on-year to €4.8m

Upturn in orders at the end of Q2, but firm still rolling out savings plan

24 July 2014
Google and IEEE launch $1m Little Box Challenge to create smaller power inverter

Open competition targets 10x shrinkage, focusing on GaN and SiC

23 July 2014
Imec demos 28Gb/s silicon photonics platform for high-density, low-power WDM optical interconnects

Improved ring-based WDM filter, thermally tunable 28Gb/s ring modulator, and high-speed Ge photodetector demonstrated

22 July 2014
Working toward lasers for on-chip global interconnects

Tokyo Institute of Technology claims first RT-CW operation of LCI GaInAsP membrane FP laser on silicon.

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29 July 2014
Aspect ratio trapping to improve InGaAs quality on silicon

ART technique eliminates GaAs anti-phase boundaries at relatively low aspect ratio of 1.3

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RSS feeds Features
1 July 2014

Improving as-grown indium gallium nitride solar cells
InGaN cells have achieved up to 2% efficiency without coatings or surface treatments, showing potential for multi-junction devices.

1 July 2014

Simplifying indium gallium arsenide growth on gallium arsenide substrate
Researchers in China investigate the process potential for replacing germanium in high-conversion-efficiency tandem solar cells.

1 July 2014

Pseudo-direct gaps for efficient light emission and absorption
Mike Cooke reports on recent research seeking to develop optoelectronic devices based on indirect-bandgap semiconductors with a nearby direct gap.

1 July 2014

Bipolar diffusion injection into indium gallium nitride quantum wells
Researchers in Finland develop current injection method with possible use in nanowire, near-surface and large-area light-emitting structures.

1 July 2014

Distributed Bragg reflectors for InGaN LEDs on silicon
Chinese researchers use DBRs to boost wall-plug efficiency by 24%.

1 July 2014

Substrates shaping trends in LED front-end manufacturing
The impact of sapphire substrates will grow unless GaN-on-Si and GaN-on-GaN improves in performance and cost.

1 July 2014

Improving electrically pumped external-cavity mode-locking
ETH Zurich and Philips Technologie claim shortest pulses and highest powers for 981nm passively mode-locked electrically pumped VECSEL.

1 July 2014

Millimetre-wave SiGe IC design – a technology overview
Increasing consumer demand for high-data-rate wireless applications has resulted in accelerated development activity to exploit the millimeter-wave frequency range, where large amounts of spectrum are available.

Features Archive
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12 June 2014

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University of California, Santa Barbara

 
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