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23 January 2017
Skyworks' quarterly revenue grows a more-than-expected 9.4% to $914.3m

Smartphone content grows at Huawei; Samsung business recovering

23 January 2017
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

20 January 2017
Ultra-thin-barrier III-nitride metal-insulator-semiconductor transistors
Normally-off devices achieve low on-resistance of 0.75Ω with 6.5A maximum drain current.
19 January 2017
Oclaro expecting quarterly revenue at high end of $146-154m guidance

Above-guidance gross margin and operating income to set new records

18 January 2017
NeoPhotonics completes sale of Low Speed transceiver business to APAT Optoelectronics

NeoPhotonics focuses on photonic integration for high-speed 100G-and-beyond networks

16 January 2017
Fully vertical and quasi-vertical gallium nitride pn diodes on silicon
Record characteristics point to future competitive low-cost devices for 200-600V power switching.
16 January 2017
Epistar expanding capacity for both AlGaInP LED chips and flip-chip CSP blue LEDs

AlGaInP LED chips to rise from 25-30% of revenue in Q4/2016 to over 30% in 2017

16 January 2017
GaN Systems joins AirFuel Alliance

GaN transistors to enable resonant wireless charging at 25-2500W

13 January 2017
GaAs component market to grow at over 4% to $9.13bn in 2021

APAC accounted for 78% of revenue in 2016, while growth in Americas driven by 4G network expansion

12 January 2017
VisIC raises $11.6m in Series C round of financing

New capital to accelerate commercialization of GaN MISHEMT power conversion devices

12 January 2017
Carbonics introduces carbon-on-silicon wafers for RF components in 5G wireless

RF devices and integrated amplifiers to be launched in 2017, then RFICs and MMICs in 2018.

11 January 2017
Back-reflector for gallium indium nitride arsenide solar cells
Researchers estimate that back-reflectors could lead to 28% increased short-circuit current under concentrator-type illumination.
11 January 2017
Purdue demos potential of beta gallium oxide on insulator transistor for ultra-efficient switches in power electronics

Low-cost method developed using adhesive tape to peel off layers of β-Ga2O3 from single crystal

11 January 2017
Panasonic acquires US-based industrial direct-diode laser start-up TeraDiode

Laser processing business to be augmented by integrating direct-diode laser technology

11 January 2017
Veeco to report Q4/2016 revenue of $91-95m, up from Q3's $85.5m

Full year down from 2015's $477m to $330-334m as China drops from 51% to 26% of total revenue

10 January 2017
University of Illinois-led team develops GaN-on-Si HEMT technology scalable to 200mm substrates

Next step to fabricate fully functional high-frequency GaN HEMTs on silicon for 5G wireless data networks

9 January 2017
Light transmission from co-integrated laser and modulator on silicon

III-V distributed Bragg reflector laser and silicon Mach–Zehnder modulator produce 25Gb/s signals.

6 January 2017
Multi-level metalization for high-density gallium nitride transistors on silicon

Scheme increases wafer utilization efficiency for high-saturation-current devices.

5 January 2017
CATV/broadband market boosted by DOCSIS 3.1 deployments, but RF revenue to remain flat

GaN the only RF technology to see revenue growth

5 January 2017
TriLumina and Analog Devices collaborate on illuminator module for automotive Flash LiDAR

High-output VCSEL array and laser driver in small surface-mount package to enable mass deployment of LiDAR

News Archive
RSS feeds News Features
23 January 2017
Interface engineering for green indium gallium nitride laser diodes
Thermal treatment results in low threshold current density of 1.85kA/cm2 under continuous-wave operation at room temperature.
RSS feeds Other News & Products
News Archive
RSS feeds Features
23 January 2017

Black polycrystalline diamond transistors with high breakdown
Despite material imperfections such as cracks and grain boundaries, devices also achieve high maximum drain currents.

23 January 2017

Single III-V channel structure for complementary MOS transistors
One indium arsenide/gallium antimonide compound semiconductor structure has been developed that can provide both n- and p-channel mobility.

23 January 2017

Advancing high-frequency and high-power electron device technology
Mike Cooke reports on work presented at the IEEE International Electron Devices Meeting (IEDM) in December.

23 January 2017

Crystal orientation and gallium nitride trench MOSFET performance
Non-polar m-plane interface doubles drain current over a-plane devices.

23 January 2017

Normally-off gallium nitride power transistor on (110) silicon
Researchers see high potential for monolithic wafer-level integration of GaN power and CMOS electronics in first demonstration of technology.

23 January 2017

GaN – A truly revolutionary semiconductor technology matures
Chief marketing officer Dr Markus Behet and chief technology officer Dr Joff Derluyn of epiwafer supplier EpiGaN discuss the benefits of GaN-on-silicon technology for RF power and power switching applications.

23 January 2017

Driving deployment of wide-bandgap power devices on 200mm
Hans Auer and scientist Dr Dominik Jaeger of Evatec introduce the advantages of wide-bandgap (WBG) power devices and some of the development challenges ahead.

23 January 2017

Heterogeneous integration of 2.3μm DFB laser diodes on silicon photonics
Device used for tunable diode laser absorption spectroscopy of carbon monoxide gas.

Features Archive
RSS feeds Recruitment
3 August 2016

Project Development Officer
Cardiff School of Engineering

5 August 2016

Senior Cleanroom Process Engineer
Cardiff School of Engineering



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