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13 November 2018

IQE reduces 2018 Photonics wafer revenue guidance from 35-50% to 11% after VCSEL-making customer cuts guidance

…but Wireless revenue to grow 8% rather than 0-5%, and Infrared growth to exceed 5-15% guidance

13 November 2018

Qorvo reduces December-quarter revenue, gross margin and earnings guidance

Apple supplier cites demand changes for flagship smartphones

13 November 2018

Lumentum reduces December-quarter revenue, operating margin and earnings guidance

Major customer for 3D sensing laser diodes requests reduction in shipments of orders scheduled for delivery this quarter

12 November 2018

Protecting ‘Made in America’ ingenuity

GTAT’s CEO Greg Knight argues for the US government to prevent critical SiC production equipment and process technology from being lost abroad

12 November 2018

CSC to participate in UK Industrial Strategy Challenge Fund program KAIROS to develop and commercialize quantum technologies

Teledyne e2v-led consortium to develop pre-production prototype of miniature atomic clock

12 November 2018

Infineon acquires wafering technology firm Siltectra

Cold Split technology to boost Infineon’s ramp-up of silicon carbide device production for power semiconductors

12 November 2018

Lumentum’s quarterly revenue rises 45.6% year-on-year to $354.1m, driven by telecom and fiber-laser demand

Telecoms grows 29% as Datacoms revenue shrinks 24% while forgoing low-margin opportunities

9 November 2018

II-VI to acquire Finisar for $3.2bn

$150m of run-rate cost synergies targeted within 36 months of close

9 November 2018

Oclaro quarterly revenue rebounds by 9% to $131.7m, aided by resuming shipments to ZTE

Increased sales of 100G datacom modules weaken product mix and gross margin

8 November 2018

NeoPhotonics’ Q3 revenue up 15% year-on-year to $81.7m

Free cash flow positive as losses slashed

8 November 2018

Veeco and ALLOS technical collaboration completes another phase towards 200mm GaN-on-Si micro-LED production

Reproducibility of ALLOS’ 200mm GaN-on-Si epi technology on Veeco’s Propel MOCVD reactor demoed for consumer electronics customers

7 November 2018

Peking University provides evidence of substitutional C atoms occupying N site with −1 charge state in semi-insulating GaN

Work could provide method for identifying carbon dopant lattice sites in other compound semiconductors

7 November 2018

Aixtron’s revenue grows 15% in Q3, driven by power electronics, laser and ROY LED applications

Highest order backlog since 2011 leads to further increase in full-year 2018 earnings guidance

6 November 2018
III-V heterojunction bipolar transistor MOCVD on 200mm (001) silicon
Researchers hope for future application in power amplifiers for mobile phone handsets.
6 November 2018

GISIT reports low threading-dislocation-density heteroepitaxial AlN film on sapphire

Simple yet effective technique demonstrates potential for mass fabrication of low-cost, high-performance DUV devices

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7 November 2018
Lateral epitaxial overgrowth on silicon to boost ultraviolet output power
Researchers improve performance to milliwatt level for flip-chip aluminium gallium nitride structures on 200mm substrates.
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1 November 2018

III-nitride solar cells on h-BN separation layer
Transferring indium gallium nitride solar cells to glass with an aluminium or frequency-selective dielectric mirror can increase short-circuit current.

1 November 2018

Atomic-layer sidewall passivation of InGaN μLEDs
Square 20μm x 20μm devices achieve peak external quantum efficiency of 33% with passivation, compared with 24% for no passivation.

1 November 2018

Amber light for zinc tin nitride boost from InGaN wells
Simulations suggest a more than 200x increase in efficiency for 600nm- wavelength light emission.

1 November 2018

Structures to enhance light extraction in InGaN LEDs
Micro-hole arrays and sidewall texturing can overcome the narrow photon escape cone from gallium nitride into air.

1 November 2018

Advancing InGaN VCSELs
Mike Cooke reports on progress towards filling the green gap and improving tunnel junctions as alternatives to indium tin oxide current-spreading layers.

1 November 2018

Integrating capacitors into p-GaN gate transistors on silicon
On-chip capacitors could help to manage parasitic inductance problems that lead to gate-drive loop over-voltage stress at high-frequency operation.

1 November 2018

Gallium oxide transistors increase breakdown to 1.8kV
Researchers have used atomic layer deposition to improve the field-plate structure in gallium oxide MOSFETs.

1 November 2018

Technology advances paving way for micro-LED cost reduction in high-volume applications
Technology solutions should start converging by the end of 2019, reckons Yole Développement .

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