CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

RSS feeds Headline News
23 January 2015
Siva Power wins $3m SunShot grant from US DOE

CIGS solar panel start-up targets manufacturing cost of $0.40/watt within one first year and $0.28/watt two years later

23 January 2015
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

21 January 2015
Prospect of accurate p-type silicon-doped gallium arsenide antimonide

MOCVD at increased temperature shifts conductivity from n- to p-type.

21 January 2015
First group-IV lasers grown on silicon by FZ Jülich and the Paul Scherrer Institute

Germanium-tin lasers emitting at 3µm target bio and medical applications

20 January 2015
IQE expects second-half 2014 revenue up 11.7% on first-half 2014

Wireless business driven by proliferation in LTE/4G, dual-band WiFi and GPS location devices

16 January 2015
SemiLEDs' quarterly revenue grows 29%

Further growth expected following completion of facility consolidation plus new design wins

16 January 2015
Ichor Systems' European head office opened by Scottish Minister

Relocation expands capacity, following license to sell Lam legacy products

16 January 2015
VLC Photonics introduces multi-project wafer standard design services

SOI, PLC, TriPleX and InP custom PIC manufacturing offered at fixed price per area

16 January 2015
k-Space partners with SUNY Poly to advance III-N research via in-situ thin-film characterization

kSA Integrated Control for Epitaxy tool reduces MOCVD process development time

15 January 2015
Market for discrete GaN power conversion devices to reach $1.1bn in 2024

GaN-on-Si to grow to 90% market share versus GaN-on-SiC and GaN-on-GaN

14 January 2015
Reducing gate leakage and current collapse in GaN HEMTs on silicon

UK research team combines sulfuric acid treatment and silicon nitride deposition to passivate devices.

14 January 2015
Ten lighting and LED trends to watch in 2015

Lighting companies’ restructuring to allow LED makers to raise capital for investment

14 January 2015
Infineon completes acquisition of International Rectifier

Infineon pays $40 per share in $3bn deal for power management product maker

News Archive
Financial Tracker
RFIC Makers:
Substrate Makers:
Optical Communications:
Equipment Makers:
All quotes delayed at least 20 mins.

Powered by FinancialContent

RSS feeds News Features
23 January 2015
Electrical injection of rolled-up heterostructure lasers

Could lead way to coherent light sources for applications in chip-level optical communications integrated on silicon platform.

RSS feeds Other News & Products
News Archive
RSS feeds Features
23 January 2015

GaAs/InP wafer bonding with low electrical resistance
Researchers see good prospects for room-temperature wafer bonding process in multi-junction solar cell applications.

23 January 2015

Double metal waveguide yields mid-IR quantum cascade laser with 24.4μm wavelength
Double metal waveguide yields mid-IR quantum cascade laser with 24.4 μm wavelength

23 January 2015

Reducing threshold current in 3μm laser diodes
Researchers claim a two-fold improvement in threshold current over the previous world record for 3 μm lasers on gallium antimonide.

23 January 2015

Non-polar AlN growth for enhancing deep UV optoelectronics
Researchers explore the best growth conditions, with a view to creating the ideal platform for light-emitting diodes and laser diodes.

23 January 2015

Hot holes for improved injection into nitride LEDs
A new hole accelerator structure aims to boost hole injection over the electron-blocking layer, giving 15% better output power at 100A/cm2.

23 January 2015

LED makers to raise technology entry level and find new applications to boost profitability in 2015
China rose from 27% to 36% of global LED chip production in 2014, says LEDinside .

23 January 2015

Expanding interest in cubic silicon carbide on silicon substrates
SiC on Si substrates could reduce costs for power electronics and III-nitride LEDs, reports Mike Cooke .

23 January 2015

First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT
Ultrasonic spray pyrolysis deposition has been used to create devices with promising performance characteristics.

Features Archive
RSS feeds Recruitment
14 October 2014

Wafer Polishing and Characterization Manager
Galaxy Compound Semiconductors (a member of IQE plc Group)

12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara


Aixtron advert

III/V Reclaim advert

AXT advert

WEP advert

LayTec advert