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16 September 2014
Norstel and Ascatron ally to provide complete SiC epi offering

Norstel’s SiC crystal growth and volume epiwafer production to complement Ascatron’s custom SiC epi and device design

16 September 2014
Luceda Photonics receives growth finance for development and marketing of PIC design framework

IPKISS software to aid design photonic integrated circuit designers

15 September 2014
Raytheon UK and Newcastle University team to investigate SiC interface defects

Project aims to improve performance for both in-house SiC CMOS devices and foundry services

15 September 2014
IQE agrees MOU with WIN and Nanyang for Singapore centre of excellence

Epi foundry provides facilities, equipment and IP to new JV Compound Semiconductor Development Centre

11 September 2014
LED market to grow at 13.5% CAGR to $42.7bn in 2020

LEDs to command 20% share of lighting market by 2020

10 September 2014
Gallium arsenide on graphene/silicon substrate

Van der Waals epitaxy technique claimed as first illustration of ultra-smooth morphology for GaAs films on two-dimensional layered material.

10 September 2014
Microsemi acquiring Centellax; announces $100m stock repurchase program

MMIC design technologies and communications product portfolio strengthened

10 September 2014
Aixtron partners with Fraunhofer IISB to enhance SiC production technology

New 8x150mm G5WW VPE system to develop 150mm epi processes

9 September 2014
Visible laser light lift-off for UV-A LEDs on free-standing GaN

Removal of substrate improves 380nm light output power by 1.7x at 50mA.

9 September 2014
GSI rejects proposed acquisition by GigOptix

GigOptix continues to seek negotiated agreement

9 September 2014
Sweden’s Epiluvac launches as manufacturer of SiC CVD equipment

Start-up also targeting hot-wall reactors at deposition of GaN, AlN and graphene wide-bandgap materials

9 September 2014
GaN driving microwave RF power semiconductor markets to over $300m by 2019

Availability of GaN devices for 4-18GHz becoming more pervasive

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16 September 2014
Ultrafast charge separation in metal dichalcogenide heterostructure

Hole transfers from molybdenum disulfide to tungsten disulfide monolayer in less than 50 femtoseconds.

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RSS feeds Features
1 September 2014

Enabling silicon photonics through advances in III-V integration on silicon
EV Group’s Dr Martin Eibelhuber discusses a wafer-level die transfer process for bonding InP laser dies to a silicon photonics wafer, allowing volume production.

1 September 2014

Simplifying zinc oxide/ gallium nitride nano-rod LED fabrication
An oblique-angle RF magnetron sputtering technique could result in low-cost, reliable mass production of nano-scale optoelectronics.

1 September 2014

Techniques for highefficiency nitride LEDs on lithium gallate substrate
External quantum efficiency and light output power have been achieved that are comparable to best values in the field.

1 September 2014

Tailored last quantum barrier achieves more efficient, powerful GaN LEDs
External quantum efficiency and light output power have been boosted by 12% at 150mA injection current for a three-step graded device.

1 September 2014

Nano-scale gallium oxide high-voltage transistor demonstration
Easy production of nanomembranes of wide-bandgap material motivates research towards integration into multiple platforms.

1 September 2014

Stress bumps improve nitride semiconductor packaged transistor performance
Flip-chip technology has been used to introduce strain-enhancement for the first time, according to researchers.

1 September 2014

Optimizing ammonia-based MBE for gallium nitride electron mobility
University of California Santa Barbara and National Taiwan University have claimed the highest roomtemperature bulk GaN mobility reported to date.

1 September 2014

Deep UV LED research moving performance beyond 10% efficiency
Mike Cooke reports on progress made by a number of research teams.

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12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara


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