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3 August 2015
AXT's revenue grows 4.5% in Q2

InP revenue grows 50% year-on-year in first-half 2015, offsetting GaAs weakness and low gallium pricing

3 August 2015
Arizona State University demonstrates first monolithic white lasers

Multi-segment nanosheet of ZnCdSSe is dynamically tunable over the full visible color range

3 August 2015
SiC market to treble and GaN to explode - if challenges are overcome

SiC and GaN will compete with silicon from low to high power

3 August 2015
LED prices to stabilize in Q3, before falling again in Q4

LED chip and packaging service prices fell 10-17% in first-half 2015

31 July 2015
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

31 July 2015
IQE named one of 55 key partners in USA's first Integrated Photonics Institute for Manufacturing Innovation

IQE to provide epitaxy services as part of SUNY-led consortium IP-IMI

30 July 2015
AXT acquires InP substrate maker Crystacomm

LEC-based crystal growth supplements AXT's VGF technique

30 July 2015
HexaTech signs Okaya as sole representative in Japan

Okaya makes direct equity investment in HexaTech

30 July 2015
GigOptix achieves first quarter of GAAP profitability

Q3 revenue to be a record $10.3m, up 21% year-on-year

29 July 2015
RFaxis collaborates with Silicon Labs to support Internet of Things and smart home market initiatives

RFAxis's reference designs support Silicon Labs' IP-based Thread wireless mesh networking solution

28 July 2015
High-pressure anneal for indium gallium arsenide transistors

Process reduces interface and border traps in aluminium oxide/hafnium dioxide gate stacks, improving performance and reliability.

28 July 2015
HexaTech wins continued DoE funding

Demonstrated results lead to $1.2m one-year extension of $2.8m two-year ARPA-E contract.

28 July 2015
NASA awards Ozark $245,000 in phase 1 SBIR grants to design SiC-based ICs for Venus Rover

Awards to develop first monolithic SiC UV pixel sensor array, plus SiC-CMOS microcontroller for lander instruments.

28 July 2015
GaN devices market growing at CAGR of 15.1% from $481.8m in 2014 to $1315m in 2021

Market led by North America 31.1% at share then Europe at 28.9%

27 July 2015
Skyworks' quarterly revenue rises a more-than-expected 38% year-on-year to $810m

Integrated mobile systems revenue grows 120% as power amplifiers fall to 24% of revenue

24 July 2015
University of Delaware awarded $1m Keck Foundation grant to develop upconversion of red light to blue

Solar cell, medical imaging and cancer treatment applications targeted

24 July 2015
Riber reports first-half revenue up 18% year-on-year to €5.7m

Orders boosted by strengthening of sales & marketing for research market

23 July 2015
ORNL makes scalable arrays of heterojunctions within nanometer-thick 2D crystalline monolayer

E-beam litho and pulsed laser vaporization selectively converts MoSe2 into MoS2; other materials and structures to be explored

News Archive
RSS feeds News Features
29 July 2015
Lowering threshold currents for m-plane III-nitride VCSELs

Ion implant aperture and planar indium tin oxide design reduces threshold current by factor of five.

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3 August 2015

Current gain in III-nitride hot-electron transistors
UCSB has implemented emitter and collector barriers using AlN/InGaN polarization dipole barriers.

3 August 2015

Vertical gallium nitride transistors with buried p-type current blocking
Device developed by UCSB and Arizona State University combines twodimensional electron gas with vertical design for better electric field distribution.

3 August 2015

Toyoda Gosei achieves specific on-resistance of less than 2mΩ-cm2
Reducing on-resistance in vertical gallium nitride MOSFETs.

3 August 2015

Gallium nitride HEMT-LED without metal interconnection
Hong Kong University of Science and Technology shows how a reduction in parasitics decreases leakage current by three orders of magnitude.

3 August 2015

Improving gallium nitride LED material quality using carbon nanotubes
Output power increased from 194mW to 266mW by using three layers of CNTs on conventional sapphire substrates.

3 August 2015

Enhancing optical confinement for III-nitride semiconductor laser diodes
Mike Cooke reports on research attempting to improve waveguide and cladding layers for blue 450nm wavelength devices.

3 August 2015

Laser diodes for mid-IR spectroscopy
Mike Cooke reports on developments of devices around the 3μm wavelength carbon-hydrogen bond fingerprint region.

3 August 2015

Room-temperature wafer bonding for multi-junction III-V solar cells
AlGaAs and InGaAs cells exhibit lowest electrical and optical losses ever reported.

Features Archive
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12 June 2014

Principal Development Engineer in the Materials Department
University of California, Santa Barbara

 
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