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17 April 2014
Tenaska decides against using Soitec CPV modules for CSOLAR IV West project

Other CPUC-approved Soitec PPAs with SDG&E unaffected

16 April 2014
GigOptix delivers $1.5m order for E-band radio chipsets

Adds senior director of IC development for Wireless Product Line

15 April 2014
Growing cubic and hexagonal GaN on standard (100) silicon substrates

Potential for monolithic integration with CMOS and polarization-free light-emitting devices.

15 April 2014
SemiLEDs' quarterly revenue rebounds by 22%, but losses still rising

Margins to improve as acquired LED packaging line to boost higher-ASP component revenue

15 April 2014
Packaged HB-LED market to grow at 12.9% to over $26bn in 2018

General lighting LEDs to grow at CAGR of 27%

11 April 2014
Improving LED efficiency through InN nanostructures

Bridging the green gap by using quantum confinement

11 April 2014
NeoPhotonics reducing losses as it confirms Q3/2013's record revenue

Demand for 100G now ramping after slower-than-expected growth in China

11 April 2014
Michigan-based Thorlabs Ultrafast Optoelectronics business unit formed to enter high-speed opto

Focus on bandwidths up to 100GHz outside traditional telecoms market

10 April 2014
Developing phosphor-free white light from nanopyramid LEDs

Four-fold improvement in light extraction over planar devices estimated

10 April 2014
Next investment cycle already begun in LED front-end equipment

Market to peak at nearly $580m in 2015; MOCVD comprising more than 80%

10 April 2014
Tyndall to lead EU project to design next-generation devices

DEEPEN to develop atom-to-device simulation environment for photonic and electronic nanostructures

9 April 2014
DARPA's Mobile Hotspots phase 1 makes progress toward providing 1Gb/s backbone to remote troops

GaN E-band PA providing 20%-PAE 20-watt output for UAV-borne millimeter-wave communications

9 April 2014
Gallium nitride device and substrate market to rise to $15.6bn by 2022

GaN power semiconductor market to be worth billions as silicon devices replaced

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RSS feeds News Features
18 April 2014
Top-down InGaAs nanowire fabrication enabled by novel etch processing

Plasma etch surface damage mitigated by digital etch repair cycles.

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RSS feeds Features
1 April 2014

Meeting the challenge of integrating III-Vs with deep submicron silicon
High-mobility devices based on indium gallium arsenide (InGaAs) channels could benefit the performance of mainstream silicon integrated circuits. Researchers are working to meet the challenges of bringing the different device traditions together.

1 April 2014

Peregrine challenging GaAs power amplifier market with UltraCMOS Global 1
Performance achieved without envelope tracking or other enhancements.

1 April 2014

Improving nanowire transistor linearity with regrowth
Third intercept point values "significant improvement over those achieved from other approaches".

1 April 2014

Enhancing SiC epitaxy with high-speed rotation
By spinning 150mm wafers at 1000rpm, growth rate has been boosted to 50μm/hour while also improving doping uniformity.

1 April 2014

Embedded Schottky diode for unidirection GaN HFET
Korean researchers have developed a device that demonstrates both forward and reverse breakdown drain voltages greater than 600V.

1 April 2014

Increasing fMAX for InP/GaInAsSb transistors
ETH-Zurich fabricates GaInAsSb DHBTs with record fMAX of 636GHz

1 April 2014

New 'universal' method for transparent conduction on nitride semiconductors
Transparency of 95% has been maintained in some candidate materials to a deep ultraviolet wavelength of 250nm.

1 April 2014

Gallium nitride quantum dots and deep UV light emission
University of Notre Dame produces LEDs with wavelengths as short as 243nm.

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8 January 2014

European Technical Sales Territory Manager
Logitech, Glasgow, Scotland, UK

 
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