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RSS feeds Headline News
27 January 2012
Year-on-year handset shipment growth of 11% in Q4 takes 2011 to 1.55 billion units

Apple reaches 8% market share in Q4; Samsung’s shipments grow 18% year-on-year as Nokia falls 8%.

25 January 2012
RFMD’s quarterly revenue falls 19% year-on-year to $225.4m

China 2G decline offsets 3G/4G growth outpacing smart-phone market.

25 January 2012
Optical transport system maker Optelian acquires Versawave

Vertical integration supplemented by 100G optical modulator provider.

24 January 2012
AXT to establish second substrate-making facility in China

$12.5m investment in constructing Tianjin plant over next two years.

24 January 2012
AQT readies ‘CIGS 3.0’ CZTS thin-film PV cells for commercialization

Earth-abundant materials promise to reduce cost of thin-film PV cells.

24 January 2012
3S Photonics Group becomes 3SPGroup

3S Photonics, Avensys and Manlight merged into one brand.

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RSS feeds News Features
26 January 2012
SiO2/GaN nano-rods give new base for high light output power

Dislocations reduced, light extraction increased.

RSS feeds Other News & Products
27 January 2012

RFaxis granted four patents for single-chip RF front-end IC technology

26 January 2012

Nanosolar’s EVP of engineering & operations transitions to CEO

26 January 2012

Amonix achieves ISO 9001-2008 and IEC 62108 certifications

26 January 2012

Powerex launches low-profile SiC MOSFET modules with multiple circuit topologies

25 January 2012

CIGS PV maker NuvoSun chooses FactoryLOOK and VistrianMES systems

25 January 2012

Lumileds launches LUXEON M for outdoor and industrial LED lighting

25 January 2012

Intense extends 808nm pump module range to 30W for defense, medical & industrial applications

25 January 2012

GreenVolts partners with Independent Solar Developers to provide CPV to agriculture

25 January 2012

Magnolia presents limits of InGaAs quantum well solar cell performance at Photonic West

24 January 2012

Cree LEDway luminaires replace 3600 street lights in North Carolina’s first large-scale LED street-light deployment

24 January 2012

Intense launches 10W version of 793nm pump module for thulium and holmium pulsed laser systems

24 January 2012

Renesas launches second series of low-loss SiC power devices integrating power conversion circuit in single package

24 January 2012

Naval Research Laboratory’s Brian Bennett made Fellow of American Physical Society

24 January 2012

Xenics launches low-noise SWIR detectors for semiconductor inspection and fault localization

23 January 2012

Opto Diode launches wide-emission, high-power IR LEDs

23 January 2012

Oclaro samples 20G VCSEL; ships more than 500,000 10G VCSELs

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RSS feeds Features
30 November 2011

Metal-nitride semiconductor avalanche for UV detection
Chinese group produces first MSM APDs on free-standing GaN with 400μm x 400μm effective area.
30 November 2011

Nitrogen/oxygen plasma improves p-type MgZnO for zinc oxide UV LEDs
LEDs produced with 35x the intensity of devices produced with nitrogen-only plasma at 20mA.
30 November 2011

Deep ultraviolet goes deeper on silicon
Epitaxial lateral overgrowth used to improve the quality of aluminum nitride templates for deep UV LEDs.
30 November 2011

Record output for single-chip 262nm mid-UV LED
Crystal IS and US ARL approach power needed for specialized use.
30 November 2011

Wet versus dry etching for sapphire wafers
Imtec Acculine’s Derek Mendes discusses how wet etching of patterned sapphire substrates for GaN LED manufacturing can present cost savings over dry etching.
30 November 2011

Patterned sapphire for nitride enhancements
In the past few years, patterned sapphire substrates have been used to improve performance of nitride semiconductor light-emitting devices.

30 November 2011

First Chinese Ka-band nitride semiconductor MMIC
Researchers look to higher frequency of ~30GHz for microwave device construction.
30 November 2011

Passivated AlInN/GaN HEMT pushes past 200GHz cut-offs
Switzerland-based research characterizes 30nm-gate-length high-electron-mobility transistor with cut-off frequency of 205GHz.
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8 November 2011

HVPE Process Engineer/Manager
IQE, Bath
 
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CrystAL-N - Substrates for epitaxy