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4 May 2016
AXT's greater-than-expected growth in Q1 driven by InP

Higher-margin product mix drives firm into profit

3 May 2016
Skyworks' quarterly revenue up slightly year-on-year

OpEx control yields margin and earnings growth in seasonally down quarter

3 May 2016
Fraunhofer ISE partners with India's NETRA on CPVIndia

Research project to determine requirements for using CPV in India

3 May 2016
Avancis sets encapsulated CIGS solar module efficiency record of 17.9%

Efficiency raised from 16.6% record certified in January 2014

3 May 2016
Aixtron's Q1 revenue hit by ongoing weak LED-related demand

…but 42% rebound in orders in Q1 to drive revenue growth in second-half 2016

3 May 2016
UNSW sets 7.6% efficiency record for non-toxic, thin-film solar cells

CZTS aiming to catch up with CdTe and CIGS PV technology

29 April 2016
Aluminium gallium nitride nanowire UV LED fabricated on metal foil

Researchers see development as first step towards scalable roll-to-roll manufacturing of nanomaterial based solid-state optoelectronics.

29 April 2016
Latest issue of Semiconductor Today now available

For key compound semiconductor business and technology developments, see latest issue

28 April 2016
POET to acquire Singapore-based opto device maker DenseLight

POET to gain fab, sales & channel distribution networks, and broader III-V product portfolio for end-to-end datacom market

28 April 2016
Alta Devices sets 31.6% one-sun solar cell efficiency record

Power-to-weight ratio of thin, flexible dual-junction technology targets UAVs

27 April 2016
Fully vertical gallium nitride p-i-n diode grown on silicon substrate

Researchers claim first demonstration with high performance.

27 April 2016
Cree's revenue falls 15.8% to $367m

Recovery to $370-395m expected next quarter, following delays to new products in commercial lighting

27 April 2016
MACOM sues Infineon over Nitronex GaN technology for 4G/LTE and 5G networks

Infineon tried to renegotiate International Rectifier-Nitronex agreements to reduce MACOM's rights, it is alleged

26 April 2016
HC SemiTek collaborates to explore BluGlass' RPCVD for low-temp p-GaN in green LEDs and AlN-on-sapphire for HB-LEDs

BluGlass to deposit RPCVD films on 4-inch wafers from HC SemiTek

25 April 2016
NREL theory overcomes barrier to using 2D semiconductors in electronic and optoelectronic devices

2D metal electrode binds with 2D semiconductor via van der Waals interaction to tune out Schottky barrier

22 April 2016
GigOptix's Q1 revenue up 25% year-on-year to record $11.4m

Firm renamed GigPeak after acquiring Magnum Semiconductor

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4 May 2016
Quantum well/barrier intermixing blue-shift of indium gallium phosphide

Thick silicon dioxide strain layer encourages thermal diffusion of aluminium to give largest shift reported for material system, according to researchers.

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3 May 2016

Noise and aluminium indium arsenide antimonide avalanche photodiodes
Researchers implement staircase structure from 1980s proposal.

3 May 2016

Exciton control in molybdenum disulfide
Researchers hope that work will lead to room-temperature Bose–Einstein condensation and efficient light-emitting structures.

3 May 2016

ORNL-led group grows aligned monolayers of latticemismatched semiconductors
van der Waals epitaxy of 2D GaSe/MoSe2 misfit bilayer heterojunction yields building block for energy-efficient optoelectronics.

3 May 2016

Tantalum barrier reduces gallium phosphide contact resistance
Out-diffusion is blocked in gold-beryllium alloy contacts, reducing Schottky barrier height in LEDs.

 

3 May 2016

Thermal droop in indium gallium nitride light-emitting diodes
Researchers have developed a model of thermal droop in InGaN LEDs through both experiment and simulations.

3 May 2016

GaN RF device market to grow at 14% CAGR, rising by 2.5x by end-2022
Market to double from $300m over next five years, says Yole.

3 May 2016

Vertical, CMOS and dual-gate approaches to gallium nitride power electronics
US research company HRL Laboratories has published a number of papers concerning III-nitride high-frequency power electronics in the past few months.

3 May 2016

III-V field-effect transistor transconductance record
Increased carrier concentration in a re-designed access region yields 3.45mS/μm at 0.5V drain bias.

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