3 July 2020

Emerging photovoltaics market to grow to $38bn in 2040

CIGS sales exceed $2bn in just ten years

3 July 2020
Improving aluminium nitride nucleation and regrowth on sapphire
Researchers use ultra-high-temperature annealing to boost crystal quality with a view to power switching electronics.
1 July 2020

GaN and SiC power semiconductor markets to surpass $1bn in 2021

Market energized by demand from HEVs, power supplies and PV inverters

30 June 2020

POET and Sanan IC to form $50m JV

100-400G optical engines to be based on Optical Interposer platform

30 June 2020

Mini-LED supply chain to benefit from Q1/21 release of Apple’s 12.9-inch iPad Pro

Taiwanese suppliers chosen to avoid impacts of China-US trade war

30 June 2020

II-VI licenses GE’s SiC power electronics technology

SiC substrate maker extends scope to devices and modules

26 June 2020

CSconnected funded through UK Research and Innovation’s Strength in Places Fund

First wave of £25.44m to support £43.74m project

26 June 2020

Vertical develops chemical dicing for low-cost, high-performance mini-LEDs

Die per wafer increased eight-fold

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News Features
26 June 2020
Carrier-localization engineering for deep-ultraviolet light-emitting diodes
Researchers use self-assembled sidewall quantum well structures to boost light output power and quantum efficiency of III-nitride material on sapphire.
19 June 2020
Boosting mobility in indium aluminium gallium nitride barrier heterostructure
Researchers claim first high-electron-mobility transistor performance, using gallium nitride interlayer to improve material quality.
12 June 2020
Baking and plasma-enhanced low-temperature gallium nitride atomic layer deposition
Sapphire substrate pretreatment enables single-crystal nucleation at 350°C with reduced impact of thermal expansion mismatch.
11 June 2020
Phosphor-free white light-emitting diodes for efficient displays and comms
Semi-polar bulk gallium nitride substrate enables partially polarized radiation and higher modulation bandwidth.
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Feature Downloads
11 June 2020

Smartphone production falls 10% year-on-year in Q1 and to fall a record 16.5% in Q2
TrendForce has cut its forecast for global annual smartphone production to 1.24 billion units, down 11.3%, given the weakening end-product demand.

11 June 2020

Dual-layer silicon nitride for threshold engineering gallium nitride transistors
A positive shift in threshold voltage has been achieved alongside reduced off-state leakage while maintaining on-current.

11 June 2020

GaN RF market growing at 12% CAGR to $2bn in 2025
Coronavirus outbreak to have minor impact on GaN deployment for 5G in 2020, reckons Yole Développement.

11 June 2020

Eta Research demonstrates GaN-on-GaN epitaxy of vertical power device structures
Other potential device structures include LEDs and lasers on n-type GaN wafers and HEMTs on semi-insulating GaN wafers, says Eta Research.

11 June 2020

Seeking lower-cost non- and semi-polar gallium nitride light-emitters
Researchers use cryogenic treatment to separate epitaxial layer overgrowth bars from growth substrate, allowing reuse of hyper-expensive material.

11 June 2020

High-index-contrast gratings for III-nitride vertical-cavity surface-emitting laser diodes
Researchers hope to enable device thickness reduction, polarization-pinning, and easier setting of the resonance wavelength.

11 June 2020

Green VCSEL enabled by curved mirror process
Room-temperature, continuous-wave operation demonstrated, along with incorporation in a white-light combination with blue and red VCSELs.

11 June 2020

Excitonic complexes in 2D semiconductors exploited to achieve optical gain
The prospect of low-power nanolasers using two-dimensional materials targets high-speed communications in supercomputing and data-center applications.