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Headline News

19 June 2013

Sharp sets CPV cell solar conversion efficiency record of 44.4%

Widening effective cell surface and matching width of interface to electrodes raises record from 43.5%

19 June 2013

TSMC Solar’s commercial-sized CIGS modules raise efficiency record for monolithic thin-film PVs to 15.7%

Record raised from 15.1% in just 4 months

17 June 2013

Air Liquide to acquire electronics materials firm Voltaix

Voltaix to complement ALOHA precursors and bring synergies in molecule discovery and scale up

14 June 2013

Qualcomm’s CMOS PA targeted at increasing competitiveness of firm’s baseband

Baseband chip firm aiming to enable white-box vendors to design mobile phones

13 June 2013

Longer-wavelength-lasing metamorphic InAs quantum wells on InP diodes

Dominant mode of 2.7μm achieved at 77K.

13 June 2013

US government honors Raytheon for completing Title III GaN production improvement program

Manufacturing Readiness Level 8, exceeding requirement for insertion into production military systems

12 June 2013

Sanan’s US affiliate Lightera acquires Luminus Devices

Specialty lighting LED maker to gain access to increased technical and financial resources

12 June 2013

Skyworks and SMC partner on wireless solutions for security, monitoring and automation in the connected home

SMC using Skyworks’ wireless networking and ZigBee front-ends for security sensors, smoke alarms, motion detectors and touch pads

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News Features

18 June 2013

First yellow LEDs from nitride semiconductor MQWs on silicon

Silicon dioxide nanorods used for material quality improvement from lateral overgrowth.

Other News & Products

Features

7 May 2013

Textured ZnO improves III-V on germanium solar cell performance
Aerotaxy process cuts cost and complexity of producing nanowires for photovoltaics, LED bulbs etc

7 May 2013

Sol Voltaics unveils SolInk nanomaterial to boost PV module performance by 25%
Aerotaxy process cuts cost and complexity of producing nanowires for photovoltaics, LED bulbs etc

7 May 2013

New orientation for GaN-on-silicon transistors
Researchers in France show how the use of (110) silicon can form a better base for combining GaN and Si electronics.

7 May 2013

Laser-processed sapphire allows increased thickness of HVPE gallium nitride
Layers up to 200μm have been grown by hydride vapor phase epitaxy with threading dislocation density down to 1x107/cm2.

7 May 2013

GaN FinFET without heterostructure
A junctionless, heterostructure-free device with a gate length of 1μm has achieved near-ideal subthreshold swing for a GaN MISFET.

7 May 2013

Direct growth of indium-rich InGaN on silicon
High-indium-content material has been produced with an ohmic contact between the nitride layer and the silicon substrate.

7 May 2013

Diode embedding in nitride transistor to reduce parasitic inductance
A nitride transistor with an embedded Schottky barrier diode shows promise for monolithic high-efficiency energy converters and inverters.

7 May 2013

Air-bridge to improve field-plate performance for nitride HEMTs
Breakdown voltage increased from 125V to 375V and stability at raised temperature improved compared with conventional design with source field-plate.

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