CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

RSS feeds Headline News
20 May 2019

MMIC market growing at 10.6% CAGR from $7.7bn to $12.7bn by 2024

Asia Pacific to remain largest region
16 May 2019

Lumentum’s growth in ROADM and fiber-laser capacity outweighs drop in 3D sensing laser revenue

Margins rising as Oclaro synergies accelerated and transceiver product lines divested
15 May 2019

Leti develops CMOS-driven micro-LEDs with simplified transfer process that eliminates TFT backplane

New concept creates all-in-one RGB micro-LEDs, eliminates transfer steps to receiving substrate
15 May 2019

New technique could pave way to simple color tuning of monolithically integrated GaN LEDs

Changing time sequence of pulsed current injection mixes 620nm and 545nm emission from Eu3+ dopant with 430nm emission from GaN
14 May 2019

Cree chosen as silicon carbide partner for Volkswagen’s FAST program

Volkswagen and Cree to work with tier-one and power module suppliers on SiC-based EV projects
13 May 2019

Emcore’s quarterly revenue grows 16.7% year-on-year to $21.7m

Margins recovering following costs of DFB to L-EML transition
13 May 2019

Soitec expanding engineered substrate portfolio into GaN by acquiring EpiGaN

Acquisition accelerates penetration across high-growth 5G, power and sensor markets
13 May 2019

Qorvo reports greater-then-expected quarterly revenue, driven by content gains

Continued growth in Infrastructure & Defense Products mitigating lower Mobile Product end-product volumes
10 May 2019
Positive threshold in GaN transistors with p-type aluminium titanium oxide
AlTiO gate insulator combined with recessing enables first demonstration of normally-off, enhancement-mode operation.
10 May 2019

NeoPhotonics’ Q1 revenue grows 16% year-on-year to $79.4m

Supply constraints on purchased sub-components to be alleviated by Q3/2019
10 May 2019

Veeco’s Q1 revenue levels out at $99m after drop off of commodity LED MOCVD system sales to China

Gross margin expected to recover from 35.5% to 40% by year-end as product mix improves
9 May 2019
Graphene interlayer for deep ultraviolet LEDs on nano-patterned sapphire
Increased aluminium mobility in quasi-van der Waals epitaxy enables lower-defect-density III-nitride semiconductor growth.
8 May 2019

Skyworks’ quarterly revenue falls 11% year-on-year to $810m

Continued growth in Broad Markets mitigates decline in Mobile business, particularly China
7 May 2019

Cree investing $1bn to expand SiC materials production and power & RF fab capacity by up to 30-fold

Automotive-qualified North Fab to provide nearly 18 times more manufacturing area; Durham fab to be converted into materials mega factory
7 May 2019

Open Eye MSA formed to speed adoption of 50-400Gbps PAM4 data-center interconnects based on CDR architectures

Minimizing signal processing in optical modules to reduce latency, power consumption and cost
News Archive
RSS feeds News Features
16 May 2019
Ultraviolet aluminium gallium nitride shell nanowire light-emitting diodes
Devices achieve ~5x the electroluminescence of nanowires with a gallium nitride shell layer.
RSS feeds Other News & Products
20 May 2019

Mini-LED backlit displays to appear in 2019 and challenge OLEDs

17 May 2019

MACOM appoints board member Daly as president & CEO, succeeding John Croteau

17 May 2019

LIGENTEC’s board gains photonics & sensors executive

17 May 2019

SETi & Seoul Viosys showcasing UV LED technology advances in horticultural lighting

17 May 2019

UnitedSiC adds seven TO220-3L- and D2PAK-3L-packaged SiC FETs to 650V product portfolio

17 May 2019

Altum RF opens office on Eindhoven University of Technology campus

14 May 2019

MACOM showcasing RF and microwave portfolio for 5G at IMS

14 May 2019

Lumileds launches LUXEON Fusion technology for white light tuning and selection with simplified fixture manufacturing process

14 May 2019

Jasper Display and Plessey demo first GaN-on-Si monolithic full-HD micro-LED bonded displays

14 May 2019

IQE appoints non-executive director, chairing Audit Committee

14 May 2019

Cree completes sale of Cree Lighting to Ideal Industries

13 May 2019

University of Illinois’ Micro and Nanotechnology Laboratory renamed after Nick Holonyak Jr

13 May 2019

Aixtron named by Gartner as MOCVD market leader for third consecutive year, at 46% share

10 May 2019

Source Photonics wins 2019 Leading Lights Award in Outstanding Components Vendor category

9 May 2019

Keysight launches dynamic power device analyzer with double-pulse tester for safely characterizing wide-bandgap semiconductors

9 May 2019

X-Celeprint implements BluGlass’ RPCVD p-GaN technology in high-performance micro-LED display prototypes

9 May 2019

ROHM launches first AC/DC converter ICs with built-in 1700V SiC MOSFET

8 May 2019

Altum RF names co-founder Tony Fattorini as VP engineering

7 May 2019

MACOM announces first analog CDR-based PAM-4 portfolio, targeting compliance with Open Eye MSA

7 May 2019

Navitas’ GaNFast power ICs enable 2x shrink and 75% more emergency lighting

7 May 2019

Pre-Switch launches 200kW SiC inverter evaluation system

News Archive
Advert
RSS feeds Features
24 April 2019

Gallium oxide could have low cost in future, reckons NREL technoeconomic analysis
The cost of manufacturing a six-inch Ga2O3 wafer in USA is less than a third of that for a silicon carbide wafer, halving the cost of power electronics.
24 April 2019

Fin structures for aluminium gallium nitride high-power electronics
Mike Cooke reports on recent research on multi-channel and vertical-current-flow devices.
24 April 2019

First demonstration of fully vertical gallium nitride transistors on silicon
Devices achieved 2.8x-better current density and 3x-lower on-resistance, compared with previous quasi-vertical structures on silicon.
24 April 2019

Vertical integration of gallium nitride nanowire transistor and light-emitter
Smaller pixels could lead to compact, efficient virtual-reality and augmented-reality systems.
24 April 2019

IGaN’s 200mm GaN-on-Si epi to optimize cost in power switching
Commercialization in mid-2019 to advance next-generation high-speed, high-power devices.
24 April 2019

High efficiency rates predicted for GaN devices by 2022
Aafreen Shaikh of Market Research Future highlights growth in the GaN device sector, detailing opportunities in the market.
Features Archive

Aixtron

III/V Reclaim advert

AXT advert

LayTec advert

University Wafer

Semigas

AXT advert

Quantum Clean