1 September 2025
Gallium oxide HFET combines polytypes
First ε-/α-Ga2O3 transistor achieves promising breakdown and on-resistance performance.
1 September 2025
Improving mobility in InAs quantum wells on GaAs substrate
Surface smoothing to reduce step bunching could enable less expensive, superior alternative for quantum information and other applications.
1 September 2025
ScAlN ferroelectric AlGaN HEMT opportunities
Potential for future reconfigurable multi-function, memory, and high-temperature applications.
1 September 2025
N-polar deep recess E-mode GaN HEMTs
Researchers achieve record-breaking frequency performance at 75nm gate length.
1 September 2025
Strain-relaxed bulk InGaN enables wavelength-stable red LEDs
Blue-shift in wavelength constrained to 6.2nm between 1mA and 100mA injection current.
28 July 2025
Mass production QF-HVPE of GaN-on-GaN system
Researchers claim record mobilities of 1591cm2/V-s and 18,175cm2/V-s at room temperature (295K) and low temperature (35K), respectively.
28 July 2025
Monolithic HEMT– micro-LED integration
Researchers reduce on-resistance by using a simplified fabrication process.
28 July 2025
Tracking down sources of efficiency droop
Researchers at UIUC have modified the ABC model to extract the impacts of Auger–Meitner recombination, charge polarization, and junction temperature.
