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19 January 2026

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month...

19 January 2026

PhotonDelta launches Global Photonics Engineering Contest at PIC Summit USA

Prize of up to €2m investment and €100,000 in services to be announced in August

19 January 2026

ALLOS and Ennostar partner on 200mm GaN-on-Si LED epiwafers for micro-LED volume production

Partnership paves way for 300mm GaN-on-Si LED epiwafers, enabling integration with logic

19 January 2026

Snow Lake extends option agreement for Mound Lake Gallium Project

Extension with Canadian Uranium Corp coincides with US proclamation on adjusting imports of processed critical minerals

16 January 2026
Reducing wafer bow in GaN-on-QST growth
Growth pressure modification allows thicker drift layers needed for 1200V-and-beyond vertical devices on silicon.
15 January 2026

EIB backs Europe’s first gallium production investment with €90m for METLEN

Project strengthens EU supply of critical raw materials

14 January 2026

Mitsubishi Electric shipping samples of four new trench SiC MOSFET bare dies for power semiconductors

Advanced bare dies for diverse embedding needs, enabling lower power consumption in power electronics equipment

14 January 2026

Australia investing $1.2bn to create Critical Minerals Strategic Reserve

Strategic Reserve to focus initially on antimony, gallium and rare-earth elements

13 January 2026

Wolfspeed produces single-crystal 300mm silicon carbide wafer

Scalable platform for powering AI infrastructure, AR/VR and advanced power devices

13 January 2026

Swansea’s CISM to lead new UK Centre for Doctoral Training in semiconductor skills

Centre for Integrative Semiconductor Materials to collaborate with University of Leeds

13 January 2026

Public–private partnership investing $450m in ATALCO’s alumina refinery and USA’s first large-scale primary gallium production

Louisiana site to boost domestic supply

12 January 2026

IQE reports strong second-half 2025 demand, driven by military & defence, AI, data center and handset markets

Strong Q1/2026 order book with improved visibility

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News Features
8 January 2026
Metal-modulated cubic GaN epitaxy
Process enables improved morphology and phase purity in red-light-emitting samples.
18 December 2025
Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.
11 December 2025
Patterning GaN for improved red LEDs
Square 300µm template region enhances LED external quantum efficiency by 57%.
4 December 2025
Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report efficiency and power benefits
27 November 2025
Nitrogen-polar III-N HFETs on 200mm sapphire substrates
Researchers demonstrate MOCVD growth with a view to industrial cost-effective, large-scale production.
20 November 2025
Far-UVC LEDs on c-plane sapphire
Devices with 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.
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Feature Downloads
19 January 2026

IDTechEx assesses the status of 800V for EV power electronics
IDTechEx analyses the adoption of silicon carbide and gallium nitride.

19 January 2026

Power SiC faces overcapacity downturn until 2027–2028, before device market grows to nearly $10bn by 2030
In 2025, utilization rates in the silicon carbide supply chain are down to about 50% for upstream processing and 70% for device processing, reckons Yole.

19 January 2026

Quasi-vertical selective area growth GaN diode on silicon
Device demonstrates non-destructive avalanche breakdown at 720V.

19 January 2026

Far-UVC LEDs on c-plane sapphire
Devices with a 225nm wavelength achieve 0.12 external quantum efficiency and 0.08mW light output power.

19 January 2026

Patterning gallium nitride for improved red LEDs
A square 300μm-square patterned template region is found to enhance red LED external quantum efficiency by 57%.

19 January 2026

Semi-polar epitaxial layer overgrowth improves micro-LED performance
Researchers report benefits for both efficiency and power.

9 December 2025

P-type layer etch for enhanced deep UV LEDs
Researchers have achieved a 10.9% increase in light output power.

9 December 2025

Hidden powerhouse: South Wales, at the heart of the global compound semiconductor industry
Howard Rupprecht, managing director of CSconnected, highlights the global role of the South Wales-based compound semiconductor cluster.

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