News: Microelectronics
26 May 2026
Altum RF showcasing products and expertise at IMS 2026
In booth #22020 at the IEEE MTT-S International Microwave Symposium (IMS 2026) in Thomas M. Menino Convention & Exhibition Center, Boston, MA, USA (9–11 June), Altum RF of Eindhoven, The Netherlands is showcasing its featured products and technical expertise, with company leaders answering questions about specific products, future plans and their decades of experience designing and delivering RF, microwave and millimeter-wave semiconductors.
With over 40+ gallium arsenide (GaAs) and gallium nitride (GaN) monolithic microwave integrated circuit (MMICs) from X-band to over 100GHz, Altum RF is featuring several products at IMS, including new components for satcom, telecommunications (with E-band), radar, and test & measurement markets.
Highlights include Altum RF’s E-band family of power amplifiers (PAs) and low-noise amplifiers (LNAs), which support demanding mmWave telecom and SATCOM applications by offering high output power and gain for longer-range links. The E-band power amplifiers include an on-chip integrated power detector.
Product highlights include:
- ARF1221Q2: 6–18GHz LNA, 1dB NF, QFN package;
- ARF1224Q2: DC–18GHz LNA, 1.6dB NF at 10GHz, QFN package;
- ARF1219Q2: 17.7–21.2GHz LNA, 1.4dB NF, QFN package;
- ARF1120Q3: 15–24GHz driver amplifier, 22dBm output P1dB, QFN package;
- ARF1121Q3: 27–31GHz driver amplifier, 22dBm output P1dB, QFN package;
- ARF1018: 71–79GHz E-band power amplifier, 1.8W Psat, bare die;
- ARF1019: 81–86GHz E-band power amplifier, 1.6W Psat, bare die;
- ARF1206: 71–86GHz LNA, 2.5–3.5dB NF, bare die.
Altum RF showcasing products and expertise at EuMW 2025
