News: Microelectronics
22 May 2025
Altum RF showcasing products and expertise at IMS 2025
Altum RF of Eindhoven, The Netherlands (which designs RF, microwave and millimeter-wave semiconductors) is showcasing its featured products and technical expertise in booth #966 at the IEEE MTT-S International Microwave Symposium (IMS 2025) in Moscone Center, San Francisco, CA, USA (15–20 June).
With over 40+ gallium arsenide (GaAs) and gallium nitride (GaN) MMICs from X-band to over 100GHz, Altum RF is featuring several products, including new components for satcom, telecoms (E-band), radar, and test & measurement markets.
Highlights include the firm’s new E-band family of power amplifiers and low-noise amplifiers supporting demanding mmWave telecom and SATCOM applications by offering high output power and gain for longer-range links. The E-band power amplifiers include an on-chip integrated power detector.
Product highlights are as follows:
- ARF1018: 71–76GHz E-band power amplifier, 1.8W Psat, bare die;
- ARF1019: 81–86GHz E-band power amplifier, 1.6W Psat, bare die;
- ARF1206: 71–86GHz low-noise amplifier, 2.5-3.5dB NF from 71–86GHz, bare die;
- ARF1303: DC–60GHz distributed amplifier, 15dB gain, 24dBm output Psat;
- ARF1200Q2: 22–31.5GHz low-noise amplifier, 1.6dB NF, 2.5x2.5 QFN package;
- ARF1202Q2: 22–31.5GHz low-noise amplifier, 2.5dB NF, 2.5x2.5 QFN package;
- ARF1020Q5: 9–11GHz X-band power amplifier, 42dBm, 5x5 QFN package.
