News: Microelectronics
9 June 2026
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices.
Featuring over 12mm pin-to-pin creepage and greater than 6000V integrated isolation, the package is purpose‑built for 1200V to 3300V GeneSiC SiC MOSFETs, delivering module‑like performance in a compact discrete form factor. Compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance.
This expands Navitas’ packaging portfolio, including SiCPAK power modules, QDPAK, TO‑247‑LP, and other high‑performance solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers.
System benefits are cited as:
- Integrated high-voltage isolation: By integrating an aluminium nitride (AlN) substrate, this package offers robust high-voltage isolation exceeding 6000V — eliminating the need for external isolation materials and simplifying system design.
- Direct-cooled, reflow-compatible thermal management: A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heatsinks, eliminating external thermal interface material (TIM). This reduces RTH,J-HS by up to 60%, leading to up to 150% increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost.
- Reduced coupling capacitance & radiated EMI: Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation.
- Superior power and thermal cycling lifetime: Built on a high-performance AlN substrate with active metal brazing (AMB) technology and a robust reflow-compatible heatsink interface, this package eliminates the need for external TIM and isolation materials from the system stack — delivering superior power cycling capability and enhanced thermal cycling lifetime.
- Industry-standard form factor and footprint: Compatible with the established high-voltage TO‑247‑4 form factor and lead geometry, this package allows effortless system integration with no redesign — while delivering superior performance, increased reliability, and lower total system cost.
“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” says Paul Wheeler, VP & general manager of the SiC business unit at Navitas. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module-class performance in a compact discrete form factor,” he adds. “As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.”
Product portfolio:
The UHV-TO-247-4-ISO package is offered in 3300V, 2300V and 1200V SiC MOSFET ratings. This packaging development enables performance improvements in high-voltage grid-tied power conversion systems (PCS), solid-state transformers (SST), battery energy storage systems (BESS), and renewable energy applications.
The new package, together with its direct-cooled heatsink assembly, are available at Navitas’ booth #544 (Hall 9) at PCIM Europe 2026 (Expo & Conference on Power Electronics, Intelligent Motion, Renewable Energy and Energy Management) in Nuremberg, Germany (9–11 June).
Navitas unveils fifth-generation SiC Trench-Assisted Planar MOSFET technology
Navitas sampling 3300V and 2300V UHV silicon carbide product portfolio
