News: Microelectronics
24 July 2026
Navitas and Magnachip partner to accelerate high-voltage and ultra-high-voltage silicon carbide adoption
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA and South Korea-based Magnachip Semiconductor Corp (which designs and manufactures of analog and mixed-signal power semiconductor platform solutions) have announced a strategic partnership to accelerate adoption of SiC technologies in high-voltage (HV) and ultra-high-voltage (UHV) power markets.
Magnachip will license Navitas’ GeneSiC Trench-Assisted Planar (TAP) technology to enter the HV and UHV SiC markets. The license spans 1200V, 2300V, 3300V and higher-voltage GeneSiC Gen 4 and Gen 5 technologies, enabling Magnachip to build on Navitas’ proven SiC device platforms for next-generation power conversion applications.
It will also gain access to Navitas’ SiC supply chain and materials ecosystem, supporting faster market entry. At the same time, the technology is planned to be ported, qualified and internalized at Magnachip’s fab.
The firms expect this approach to help accelerate Magnachip’s entry into SiC while maintaining continuity with Navitas’ established technology and materials base. The licensed technologies are expected to support next-generation applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems.
The agreement also encompasses broader engagement beyond SiC. Additional areas of partnership are expected to be detailed and announced later.
“This strategic partnership with Magnachip reflects our long-term vision to broaden GeneSiC adoption across high-voltage and ultra-high-voltage power markets,” says Navitas’ president & CEO Chris Allexandre. “By licensing our proven GeneSiC technologies and supporting Magnachip through our supply chain and materials ecosystem, we are creating a path to scale advanced SiC solutions more rapidly while enabling a deeper, long-term collaboration between our companies,” he adds.
“This agreement opens an important new market opportunity for Magnachip in high-voltage and ultra-high-voltage SiC,” says Magnachip’s CEO Chae Lee. “The addition of GeneSiC technology complements our existing MOSFET and power semiconductor portfolio and positions Magnachip to serve customers that require higher efficiency, higher voltage capability and more reliable power conversion solutions.”
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Navitas unveils fifth-generation SiC Trench-Assisted Planar MOSFET technology
Navitas sampling 3300V and 2300V UHV silicon carbide product portfolio
