News: Microelectronics
2 May 2024
University of Arkansas tops out Multi-User Silicon Carbide Research and Fabrication Facility
The University of Arkansas (U of A) has celebrated a milestone with the topping-out of the Multi-User Silicon Carbide Research and Fabrication Facility.
More than 100 students, faculty, state leaders and citizens were on hand to sign the steel topping-out beam and hear remarks from the College of Engineering’s dean Kim Needy and Alan Mantooth, Distinguished Professor of electrical engineering.
Picture: From left, College of Engineering dean Kim Needy signs a beam while Margaret Sova McCabe (vice chancellor for research and innovation) and Charles Robinson (chancellor) observe.
The new facility will enable the federal government – via national laboratories – businesses of all sizes and other universities to prototype with silicon carbide, a capability that does not presently exist elsewhere in the USA.
Work at the facility aims to bridge the gap between traditional university research and the needs of private industry and is expected to accelerate technological advancement by providing a single location where chips can go from developmental research to prototyping, testing and fabrication.
Located next to the National Center for Reliable Electrical Power Transmission at the Arkansas Research and Technology Park, the 21,760ft2 facility will address obstacles to US competitiveness in the development of silicon carbide electronics used in a wide range of electronic devices, circuits and other consumer applications. The building will feature about 8000ft2 of cleanrooms for fabrication and testing.
Education and training within the facility should also accelerate workforce development, helping to supply the next generation of engineers and technicians in semiconductor manufacturing.
