AES Semigas


3 March 2021

Teledyne e2v HiRel and Integra partner on high-voltage GaN devices

Teledyne e2v HiRel Electronics of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) has announced a new high-reliability partnership with Integra Technologies Inc (ITI) of El Segundo, CA, USA (which makes high-power RF and microwave transistors and power amplifier modules for mission-critical applications including radar, electronic warfare and advanced communications systems). Teledyne will leverage Integra’s portfolio of gallium nitride on silicon carbide (GaN-on-SiC) RF power transistor products to deliver optimized power solutions for the space market.

With Integra, Teledyne e2v HiRel will specialize in providing high-power RF devices for emerging space applications in the LEO and GEO payload market. Teledyne will also offer high-reliability options for Integra's GaN-on-SiC power devices and pallets targeted at the defense market.

“Our space customers are requesting RF power devices at higher power density levels and operating at higher frequencies,” says Brad Little, VP & general manager of Teledyne e2v HiRel. “The combination of our expertise in providing space RF components along with Integra’s high-performance RF GaN device technology and product portfolio will provide space payload engineers state-of-the-art power devices for insertion in their applications,” he adds.

“Integra has decades of proven success enabling a variety of defense and commercial radar systems with our world-class RF power products,” says Integra’s CEO Suja Ramnath. “We are excited to partner with Teledyne e2V, a market leader in hi-rel with deep domain expertise, to extend the application of our unique GaN-on-SiC technology and products into the growing space market.”

See related items:

Teledyne e2v HiRel adds high-power GaN HEMTs to 650V family

Tags: E-mode GaN FETs Integra GaN-on-SiC HEMT