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12 January 2021

GaN Systems launches first GaN power stage with programmable source current and over-current protection

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has released two 650V half-bridge daughter cards (30A and 60A), which provide a versatile platform for evaluating GaN drivers and transistors.

The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and 6kW (GS-EVB-HB-66516T-RN), and include the Renesas RAA226110 low-side GaN FET driver. The cards are reckoned to be the first to provide programmable over-current protection with adjustable thresholds and programmable source current for adjustable turn-on slew rate.

“GaN transistors have established themselves as a fundamental building block in power electronics,” says Paul Wiener, VP of strategic marketing at GaN Systems. “The introduction of Renesas’ low-side GaN FET driver with its best-in-class features and performance are a confirmation that GaN transistors have become the preferred tool of choice for power design engineers,” he adds.

“Renesas is committed to the development of innovative power products that support GaN transistors,” states Philip Chesley, VP of the Industrial and Communications business unit at Renesas. “One example is our new RAA226110 low-side GaN FET driver, which provides all of the features customers are looking for in a high-performance driver.”

The power stage designs can be utilized in a wide range of applications, from enterprise 1U power supplies (up to 5kW), high-power density bridgeless totem pole PFCs, PV inverters, energy storage systems, motor drives, and automotive DC/DC converters and onboard chargers.

Design flexibility, simplicity and unique features define the evaluation board, which operates with a GaN Systems’ motherboard for easy setup and plug-and-play operation. The evaluation card also features integrated VGS regulation at 2MHz fSW and one-of-a-kind functions such as programmable over-current protection with adjustable thresholds of 40mV/80mV/120mV and differential current sensing as well as programmable source current for adjustable turn-on slew rate (0.3A, 0.75A or 2A).

Tags: GaN Systems E-mode GaN FETs