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22 May 2020

Infineon launches modular evaluation platform to test driving options for discrete CoolSiC MOSFETs

Since double pulse testing is a standard procedure for designers to learn about the switching behavior of power devices, Infineon Technologies AG of Munich, Germany has introduced a modular evaluation platform to facilitate the testing of drive options for its 1200V CoolSiC MOSFET in TO247 3-pin and 4-pin packages.

Picture: Motherboard of the evaluation platform was designed for a maximum voltage of 800V and a maximum pulsed current of 130A. For measuring at higher temperatures of up to 175°C, the heatsink can be used together with a heating element.

The center of the evaluation platform comprises a motherboard with interchangeable drive cards. The drive options include a Miller clamp and a bipolar supply card. Additional variants will be launched in the near future. In shortening time-to market for a variety of applications, the portfolio is targeted at helping to pave the way for silicon carbide (SiC) to become mainstream.

The motherboard of the evaluation platform is split into two sections: the primary supply side and the secondary side. On the primary side, the 12V supply and the pulse-width modulation (PWM) will be connected. On the secondary side is the secondary supply of the driver, the half bridge with connections for the shunt for current measurement and the external inductance.

The positive operating voltage of the drivers can be adjusted between +7.5V and +20V, while the negative voltage can be regulated between +1V and -4.5V. The motherboard was designed for a maximum voltage of 800V and a maximum pulsed current of 130A. For measuring at higher temperatures of up to 175°C, the heatsink can be used together with a heating element.

Serving as a reference design for two drive options, the cards feature driver ICs from the EiceDRIVER family suitable for high-frequency switching of SiC power devices. The first modular card contains the 1EDC Compact 1EDC20I12MH with an integrated active Miller clamp, which is typically activated below 2V. The second drive card includes the 1EDC Compact 1EDC60H12AH allowing a bipolar supply, where VCC2 is +15V and GND2 is negative. With these two driver cards, the portfolio already covers a large part of the options preferred by designers for driving SiC MOSFETs.

All three components of the modular evaluation platform – motherboard, Miller clamp and bipolar drive cards – can be ordered now. An additional drive card for short-circuit detection will be added to the portfolio over the summer. A card for SMD package testing will follow in second-half 2020.

Tags: Infineon SiC MOSFET

Visit: www.infineon.com/coolsic

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