News: Microelectronics
9 September 2026
DB HiTek completes reliability qualification for 8-inch 1200V SiC MOSFET process
Pure-play 8-inch specialty foundry DB HiTek of Seoul, South Korea has completed reliability qualification for its 1200V silicon carbide (SiC) MOSFET process on 8-inch (200mm) wafers. This marks a step in its expansion into the 8-inch SiC foundry market. Building on completion of this qualification, DB HiTek plans to strengthen product development support for customers, secure new customers and accelerate preparations for volume production in 2027.
While 6-inch wafers currently dominate the SiC market, major global semiconductor manufacturers are transitioning to 8-inch wafers to improve production efficiency and cost competitiveness. DB HiTek has responded to this market transition by developing 8-inch SiC process technology and building its foundry service capabilities.
Through optimization of its high-power SiC MOSFET process, DB HiTek says that it has achieved competitive electrical characteristics and a high level of reliability. The firm has established what it claims is the first complete 1200V 8-inch SiC foundry process flow, creating a foundry service platform capable of supporting customers across design, manufacturing, electrical characterization and reliability qualification.
To support the commercial rollout of its 8-inch SiC foundry business, DB HiTek is providing customers with process design kits (PDKs) for its proprietary first- and second-generation 1200V SiC MOSFET processes. A third-generation PDK is scheduled for release this November. By using these PDKs, customers can reduce the resources required during the initial stages of development, accelerate prototype fabrication and shorten product development time by more than a year, it is reckoned.
The second-generation process covered by the PDK achieves a specific on-resistance (Rsp) of 2.5mΩ•cm2 or less and a threshold voltage (Vth) of 3V or higher at an on-state gate voltage (Vgs(on)) of 18V. It has also completed reliability qualification, a demanding stage of process development.
The third-generation process, scheduled for release in November, is being qualified with the goal of achieving a specific on-resistance of 2.3mΩ•cm2 or less at the same on-state gate voltage of 18V, together with a short-circuit withstand time (SCWT) of at least 2.5μs in the short-circuit safe operating area (SCSOA). Once qualification is complete, DB HiTek plans to make the third-generation PDK available to customers.
DB HiTek plans to complete process preparations and provide access to longstanding customers in third-quarter 2026. It plans to make the service available to all customers beginning in second-quarter 2027.
“The completion of reliability qualification for our 1200V SiC MOSFET process is significant because it demonstrates that we have secured the core process technology and manufacturing foundation required to provide the world’s first 8-inch SiC foundry service,” says DB HiTek. “We will continue preparing for 8-inch SiC volume production in 2027, with the aim of establishing a position in the market and strengthening our competitiveness in the next-generation power semiconductor foundry sector.”
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