News: Microelectronics
11 September 2025
DB HiTek begins customer enablement for 650V GaN HEMT process
The 8-inch specialty foundry DB HiTek of Seoul, South Korea says it is in the final stages of development of its 650V E-mode gallium nitride (GaN) high-electron-mobility transistor (HEMT) process for power semiconductor applications. Also, at the end of October, the firm is offering a dedicated GaN multi-project wafer (MPW) program.
Compared with traditional silicon-based power devices, GaN-based semiconductors deliver superior performance under high-voltage, high-frequency and high-temperature operating conditions, offering exceptional power efficiency. In particular, 650V E-mode GaN HEMT stands out for its high-speed switching performance and robust operational stability, making it well suited for electric vehicle EV charging infrastructure, power conversion systems in hyperscale data centers, and advanced 5G network equipment.
In 2022, DB HiTek identified GaN and SiC as key growth drivers and has since invested significantly in process development. “DB HiTek is already recognized worldwide for its leadership in silicon-based power semiconductor technologies, including the development of the industry's first 0.18µm BCDMOS process,” claims the firm. “By adding GaN process capabilities, we are expecting to enhance the company’s competitiveness with a broad technology portfolio.”
Following completion of the 650V GaN HEMT process, DB HiTek plans to roll out a 200V GaN process and a 650V GaN process optimized for IC integration by the end of 2026. Looking ahead, it aims to expand its GaN platform across a wider voltage spectrum, aligned with market needs and customer requirements.
To support these initiatives, DB HiTek is expanding the cleanroom facilities of Fab2 in Chungcheongbuk-do to boost capacity by about 35,000 8-inch wafers per month, supporting production of GaN, BCDMOS, and SiC processes. Upon completion, DB HiTek's total monthly wafer capacity will rise by 23%, from 154,000 to 190,000 wafers.
Meanwhile, DB HiTek is participating in the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) at BEXCO in Busan, South Korea (15–18 September), where it is highlighting progress in SiC process development alongside its GaN and BCDMOS technologies.
