News: Microelectronics
10 November 2026
Nexperia adds ultra-low-resistance GaN FETs for next-gen power density and efficiency
Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has launched new ultra-low-ohmic gallium nitride (GaN) FETs, expanding its low- and medium-voltage GaN portfolio with devices spanning 18V to 200V. Designed to address power design challenges in AI data centres, humanoid robotics, battery-powered tools, renewable energy, high-efficiency SR and DC–DC conversion, the new devices combine high current capability, fast switching performance and compact thermally enhanced packages to support increased efficiency and power density across a broad range of applications.
The new family achieves record-low on-state resistance, with sub-milliohm RDS(on) in a PCB footprint of 10mm2. Combined with low RDS(on) x QG and RDS(on) x QOSS figures of merit, these devices support higher switching frequencies and reduced switching losses in demanding power conversion applications. These characteristics are particularly relevant for next-generation power systems, where increasing demands for efficiency, power density and compact form factors are driving the adoption of advanced DC–DC converter topologies and high-performance three-phase BLDC/PMSM motor drives.
In high-density DC–DC power conversion, the medium-voltage 100V to 200V portfolio addresses both primary-side and secondary-side power stages in isolated topologies, as well as non-isolated step-down converters. These devices are suitable for half-bridge and full-bridge LLC resonant converters, while also enabling highly efficient synchronous rectification in 48V power delivery architectures increasingly used in AI infrastructure.
The low-voltage 18V to 40V devices are optimized for secondary-side synchronous rectification and low-voltage power-distribution stages, enabling efficient conversion from 12V rails down to sub-1V processor core voltages.
In motion control applications, the combination of low RDS(on) and compact package dimensions enables high current capability within a small PCB footprint. Fast switching performance supports efficient inverter operation, optimized dead-time control and, where required, 100% duty-cycle operation. Together, these capabilities enable advanced modulation techniques that improve current control, thermal performance and overall system efficiency.
“The introduction of these new GaN-based solutions marks an important milestone in Nexperia’s journey to becoming a leader in wide-bandgap power semiconductors,” reckons Andrea Bricconi, VP & head of the GaN Product Group. “From AI data centres to humanoid robotics, next-generation systems demand ever higher levels of efficiency, performance and power density. This new portfolio reinforces Nexperia’s role in enabling the power architectures that will support these rapidly evolving applications,” he adds.
“AI data centres are driving unprecedented demand for efficiency and power density, accelerating the adoption of highly efficient power conversion architectures that step down from 800VDC to 48VDC, 12VDC and even 6VDC,” says Roberto Crisafulli, director of GaN marketing and applications. “Our new low- and medium-voltage GaN products are foundational building blocks for advanced multi-level and stacked power conversion architectures, enabling the efficiency, scalability and power density required by next-generation AI power delivery systems.”
The flagship product in the series, the GANE0R8-100QTM, a 100V GaN FET featuring a typical RDS(on) of just 0.75mΩ in a compact 3mm x 5mm PQFN package, is available now alongside five additional portfolio members spanning 25V to 200V and offering RDS(on) values down to 0.37mΩ. Two further devices, including the 18V GANE0R3-015QTL with a typical RDS(on) of 0.32mΩ, are scheduled for release in first-quarter 2027, completing a portfolio of eight products spanning 18V to 200V. The family ranges from a 18V device in a 3.3mm x 3.3mm PQFN package to a 200V device in a 3mm x 5mm PQFN package, with both package options incorporating an exposed pad designed to support top-side cooling and improved thermal performance.
Nexperia expands 650V industrial-grade high-power GaN FET portfolio
