News: Microelectronics
10 June 2026
Nexperia expands 650V industrial-grade high-power GaN FET portfolio
Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has expanded its portfolio of 650V industrial-grade high-power gallium nitride (GaN) FETs for demanding power conversion applications. The portfolio includes devices with RDS(on) on-resitances of 35mΩ, 50mΩ and 70mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended portfolio provides power engineers with greater flexibility to balance efficiency, thermal performance and power density across high-power applications, including data-center and telecom power supplies, renewable energy systems, battery energy storage (BESS), and industrial drives and automation.
The rapid growth of AI computing is driving rack power supply requirements from sub‑3kW towards 5–12kW levels, while renewable energy and industrial electrification trends continue to drive higher switching frequency and efficiency requirements. In this context, wide-bandgap technologies such as GaN are becoming increasingly important for enabling higher efficiency, reduced system size and improved thermal management in next-generation power conversion architectures.
“The transition towards wide-bandgap power semiconductors is accelerating across industrial, energy and AI infrastructure applications,” says Andrea Bricconi, VP & head of Nexperia’s GaN Product Group. “As efficiency, power density and thermal requirements continue to increase, we’re focused on making GaN more accessible and scalable for engineers designing high-power applications. Expanding our 650V GaN portfolio is an important step in that direction - and only the beginning of what we’re building in the wide-bandgap space”.
At the system level, these next-generation GaN devices enable engineers to push beyond the performance limits of conventional silicon-based solutions through higher switching frequencies and lower switching and conduction losses. Depending on the application topology and operating conditions, designers can achieve higher power density, improved efficiency, reduced cooling requirements, and lower overall system cost. The increased switching frequency also enables the use of smaller passive components and reduced magnetics size, supporting more compact and scalable power architectures with greater flexibility to optimize performance and footprint.
In high-power LLC stages typical of 10–12kW AI server PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1kW high-voltage motor drive, GaN devices can reduce inverter power losses by 20–25%, enabling an efficiency improvement of ~1–1.5% while also supporting smaller thermal management solutions and higher overall system power density.
Built on Nexperia’s GaN technology platform, the devices combine fast switching characteristics, low switching losses, controlled dynamic behaviour, and robust thermal performance with a range of industry-standard package options. This enables optimization of both electrical and mechanical design parameters while supporting straightforward integration into existing power system architectures.
The 35mΩ and 70mΩ devices are available now in TOLL, TOLT, TO-247-3 and TO-247-4 packages, with further 50mΩ variants scheduled for third-quarter 2026.
