News: Suppliers
3 November 2026
Elethron to build UK AlN substrate manufacturing capability
Elethron Ltd of London, UK — an advanced materials and process engineering company developing high-performance semiconductor materials and engineered substrates for ultrawide-bandgap technologies — plans to establish a UK manufacturing capability for aluminium nitride (AlN) substrates, starting with 2-inch wafers for customer evaluation, device fabrication trials and industrial qualification.
AlN combines an ultra-wide bandgap and high thermal conductivity with favourable electron mobilities and deep-UV transparency, making it a compelling platform for high-performance power electronics, advanced RF devices and optoelectronics designed for extreme environments. AlN is also a native substrate for aluminium-rich III–N epitaxial structures used in emerging semiconductor devices.
The UK has a strong base in compound semiconductor research, epitaxy, device fabrication and metrology. Elethron says that its investment will augment these capabilities by developing a domestic source of AlN substrates, diversifying the national upstream semiconductor landscape.
“The UK relies on foreign and challenged supply chains for wide-bandgap materials, exposing domestic industry to geopolitical and supply risks,” notes founder & CEO Hamid Soorghali. “Establishing UK production would provide a long-term sovereign source of this critical material, giving industry reliable access to support its continued innovation and maintain the UK’s leadership in compound semiconductors.”
Elethron has begun work to establish its initial crystal-growth capability for a 2-inch AlN wafer platform. This will support small-batch wafer supply to UK and European epitaxial foundries, semiconductor manufacturers and laboratories for customer evaluation, epitaxial growth and fabrication trials. Elethron will also focus on improving wafer quality and yields, reducing production costs and building a reliable supply base while developing a pathway towards 4-inch wafer production.
In parallel, Elethron is developing its AlN4RF initiative, the first in a series of industry co-development programs to shape the specifications for its application-led substrate portfolio. AlN4RF will connect its AlN wafer engineering with downstream processing, packaging and product qualification for precision microwave and high-power RF applications in radar, satellite communications and advanced radio infrastructure.
“Our immediate priority is to develop AlN substrates that manufacturers can process, test and qualify in their devices,” Soorghali says. “Our planned demonstrators with industry partners are intended to accelerate the transition of AlN from initial evaluation into device fabrication and, ultimately, commercial applications in high-performance electronic systems.”
Elethron says that its AlN substrate capability will provide the building block for its wider portfolio of engineered semiconductor materials, including material systems for high-temperature, high-power and radiation-tolerant electronic and optoelectronic devices.
