News: Microelectronics
22 May 2026
Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers
Toshiba Electronics Europe GmbH has started test-sample shipments of the TW007D120E 1200V trench-gate SiC MOSFET, which is primarily intended for power supply systems in AI data centers.
Housed in a QDPAK top-side-cooled package, the surface-mount device delivers high current capability, improved heat dissipation, and higher power density in the power stage, which is essential for power conversion in AI data centers. The product is also suitable for renewable energy-related equipment, including photovoltaic inverters, uninterruptible power supplies (UPS), EV charging stations, and energy storage systems.
With the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V HVDC (high voltage direct current) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. The TW007D120E addresses these requirements, combining low conduction loss, low switching loss, and enhanced thermal performance to support more efficient and compact power system designs.
The new MOSFET features Toshiba’s proprietary trench-gate structure, which achieves a low on-resistance per unit area (RDS(on)A). The typical RDS(on) of the device is 7.0mΩ with 33nC gate–drain charge (Qgd) and 172A DC drain current (ID). Compared with Toshiba’s 3rd-generation 1200V SiC MOSFET (TW015Z120C), the TW007D120E reduces RDS(on)A by about 58% and improves the figure of merit (RDS(on) x Qgd, which represents the trade-off between conduction loss and switching loss) by about 52%. The device also supports low gate drive voltage (Vgs-on) operation of 15V to 18V. These features enable highly efficient operation and reduced heat generation in data-center power supply systems, contributing to improved overall system performance.
Toshiba plans to prepare for mass production of the TW007D120E during fiscal year 2026 and will continue to expand its lineup, including development for automotive applications. Through its trench-gate SiC MOSFET technology, the firm aims to contribute to improved power efficiency and reduced CO2 emissions across data centers and industrial equipment.
Toshiba showcases power semiconductor solutions at APEC
Toshiba ships early test samples of bare die 1200V SiC MOSFET
