News: Microelectronics
24 March 2026
Toshiba showcases power semiconductor solutions at APEC
In booth #1753 at the Applied Power Electronics Conference (APEC 2026) at the Henry B. Gonzalez Convention Center in San Antonio, Texas, USA (22–25 March), Toshiba America Electronic Components Inc – the North American semiconductor and storage business of Tokyo-based semiconductor maker Toshiba Corp – is highlighting its latest power semiconductor technologies enabling more intelligent, efficient and sustainable system designs.
Toshiba is demonstrating how its broad portfolio supports next-generation applications across automotive, data-center, industrial, infrastructure, defense and medical markets.
The portfolio includes silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) FETs; IGBTs; optical and digital isolation devices; motor control solutions; microcontrollers (MCUs); protection ICs such as eFuses; and a range of other general-purpose semiconductor devices.
In high-density data centers, Toshiba solutions help to reduce power loss and simplify thermal management. In electric vehicles, they contribute to improved system efficiency and extended range. In both cases, the focus is on meeting performance requirements while supporting reliability and energy efficiency.
At APEC, Toshiba is featuring several new products and technology updates, including:
- UMOS 11 MOSFETs – Expanded portfolio in industry-standard packages featuring improved switching characteristics and reduced RDS(on) per area compared to the previous UMOS 10 generation.
- Top-side-cooled TOGT package – Engineered for thermally demanding, high-power-density applications, enabling heat dissipation through the top of the package to reduce thermal stress on the PCB.
- SiC power modules – High-power modules for grid-level and industrial systems utilizing Toshiba’s latest silicon carbide process technology.
- 750V and 1200V SiC die and modules – Targeted for automotive drivetrain inverter applications, offering power-dense configurations adaptable to specific system requirements.
- GaN devices – Ongoing development of low-voltage and high-voltage GaN technologies, with additional product updates planned later this year.
- MCU, MCD, and SmartMCD devices – Microcontroller and motor control solutions designed for automotive body electronics, ECUs, and industrial control applications.
- System reference designs – Demonstrations include high-efficiency power supply platforms such as 3kW server PSUs for data-center applications, automotive ECU power architectures, and motor control reference designs for pump and power tool systems.
Toshiba says that its vertically integrated manufacturing model and globally diversified supply chain provide reliable, scalable and cost-effective solutions for demanding applications. By owning its manufacturing processes, the firm adds that it delivers consistent quality and long-term supply stability – critical factors for automotive electrification and data-center infrastructure growth.
Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package
