News: Microelectronics
8 May 2026
ITC affirms initial determination that Innoscience infringed Infineon GaN patent
Infineon Technologies AG of Munich, Germany says that the Full Commission of the US International Trade Commission (ITC) has affirmed the ITC’s initial determination from December 2025 that China-based Innoscience (Suzhou) Technology Holding Co Ltd, which manufactures GaN-on-silicon power chips on 8” silicon wafers, infringed an Infineon patent concerning gallium nitride (GaN) technology and ordered import and sales bans against Innoscience. The Commission’s final decision and the bans are subject to a 60-day review period of the US President.
“This decision once again highlights the robustness of Infineon’s intellectual property. It reinforces our commitment to actively protect Infineon’s patent portfolio and uphold fair competition in the industry,” says Johannes Schoiswohl, senior VP & head of Infineon’s GaN Systems business line. “With our industry-leading 300mm GaN manufacturing, we are uniquely positioned to scale innovation and deliver the performance, quality and cost advantages that our customers need to accelerate decarbonization and digitalization,” he continues.
In a parallel dispute in Germany, Infineon is asserting infringement of three patents and one utility model in the Munich District Court I (Landgericht München I). Already in August 2024, the Munich court found infringement of the first Infineon patent by Innoscience. Trials for another patent and a utility model are scheduled this June.
Beijing Intellectual Property Court upholds validity of Innoscience’s GaN patents
US ITC preliminary determination finds violation of Infineon patent by Innoscience
