News: Microelectronics
3 March 2026
Soitec and NTU Singapore reporting results of research program into 6G connectivity
At the Mobile World Congress (MWC 2026) in Barcelona, Spain (2–5 March), engineered substrate manufacturer Soitec of Bernin, near Grenoble, France and Nanyang Technological University, Singapore (NTU Singapore) are announcing results of their joint four-year research program into next-generation 6G connectivity. As 5G adoption becomes widespread and consumers are becoming accustomed to the speed and bandwidth it offers, Soitec and its research partners are laying the groundwork for the next revolution in wireless communication.
Soitec and NTU Singapore’s collaboration has produced three technical papers demonstrating the high performance of gallium nitride (GaN) devices on Soitec’s epitaxial wafers. This is claimed to mark a major step for 6G connectivity in the FR3 and millimeter-wave (mmWave) frequency bands.
The shift to 6G technology increases power density, bandwidth and energy-efficiency requirements for devices and components, posing particular challenges for compact form factors, such as smartphones and connected wearables. In this context, the research published by Soitec and NTU Singapore highlights the growing potential for GaN-on-silicon to complement gallium arsenide (GaAs) technologies in next-generation RF front-end modules for smartphones and other mobile devices.
By leveraging Soitec’s specialized GaN-on-silicon epitaxial substrates developed at Soitec Belgium, the joint NTU–Soitec research team demonstrated record power-added efficiency (PAE) at low voltage required for handset battery and frequency performance at FR3 and mmWave frequencies. Notably, NTU researchers achieved PAE levels exceeding 50% at FR3 frequencies, confirming the suitability of these substrates for highly integrated, energy-efficient RF solutions.
The results underline the ability of GaN-on-silicon to combine high RF performance with the cost, scalability and integration advantages of silicon platforms, a combination that is increasingly attractive for the smartphone industry as it prepares for 6G. Compared with traditional GaAs-based solutions, GaN-on-Si can support higher output power, improved thermal management and reduced system complexity, while enabling smaller and more efficient RF front-end designs.
It is reckoned that, together, these breakthroughs pave the way for more compact and energy-efficient 6G base stations, as well as next-generation mobile handsets, while accelerating the maturation of the global GaN ecosystem across both infrastructure and consumer markets.
“This research clearly demonstrates the cornerstone role advanced engineered substrates will play in enabling 6G technologies,” says Christophe Maleville, senior executive VP innovation & chief technology officer at Soitec. “Our collaboration with NTU Singapore confirms that GaN-on-silicon can deliver outstanding RF performance while meeting the cost, scalability and integration requirements of future mobile devices. By pushing the limits of efficiency and frequency operation, we are not only preparing the RF front-end of tomorrow’s smartphones but also accelerating the global GaN ecosystem across both infrastructure and consumer applications.”
Soitec is showcasing these 6G breakthroughs and its full suite of semiconductor materials in Hall 2 Stand 2A21MR at Mobile World Congress 2026.
GaN-on-silicon HEMTs for millimeter-wave 5G
Singapore opens NSTIC (GaN), first national facility for gallium nitride
GaN on silicon Millimeter-wave 5G Soitec
