News: Microelectronics
10 June 2026
EPC2378 25V, 410µΩ eGaN enters mass production for high-density DC–DC conversion
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that its new EPC2378 25V eGaN power transistor has entered mass production, enabling high-density power system designers to achieve higher efficiency, faster switching and greater power density in demanding DC–DC conversion applications. EPC2378 is optimized for synchronous rectifier applications on the secondary side of a 48V-8 or 5V LLC converter. In addition to what is claimed to be the best-in-class 410µΩ typical RDS(on), the devices have an industry-leading low RDS(on) x QG figure of merit that enables higher-frequency and higher-efficiency operation. These capabilities are of particular value in fast-growth markets such as AI infrastructure, data centers, telecom, industrial systems and advanced computing platforms.
The EPC2378 can handle continuous drain currents of up to 101A, making it suitable for high-current, low-voltage power designs. Packaged in a compact 3.3mm x 3.3mm PQFN footprint with a backside thermal pad, the device is optimized for high-power-density applications demanding superior thermal management and maximum efficiency.
The increasing demand for smaller, higher-efficiency power conversion systems is creating a need for improved power semiconductors that can operate at higher frequencies with lower losses, says CEO & co-founder Alex Lidow. The EPC2378 showcases the power of eGaN technology by delivering very low conduction losses with excellent switching performance, enabling power designers to achieve higher efficiency, higher power density, and more compact system designs in demanding applications such as AI infrastructures.
To accelerate development and simplify evaluation, EPC will also introduce the EPC90185 development board, a dedicated platform designed to demonstrate the full capabilities of the EPC2378. The board integrates two EPC2378 transistors with a half-bridge gate driver, a dead-time generation circuit, input capacitors, sense points and high-current connectors, enabling engineers to rapidly evaluate performance in real-world applications.
The EPC2378 is available for ordering through EPC’s global distribution channels and direct sales, enabling customers to scale designs for data-center power supplies, synchronous rectification stages, motor drives, and other high-density power conversion use cases.
The EPC2378 eGaN FET is priced at 3K units per reel at $2.40 each. The EPC90185 development boards are $226 each.
Both the EPC2378 and EPC90185 demonstration board will be available for delivery from distributors Digi-Key and Mouser by the end of June.
