News: Microelectronics
15 July 2026
Infineon introduces rad-hard GaN HEMT driver
Infineon Technologies AG of Munich, Germany has introduced the RIC70115, a radiation-hardened (rad-hard) gallium nitride (GaN) high-electron-mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements.
The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the new space economy continues to scale and satellite constellations grow in complexity and number, demand for rad-hard power components that support the transition from silicon to GaN is increasing.
Picture: Infineon’s new RIC70115 rad-hard GaN HEMT driver.
“GaN power solutions are becoming an integral part of the design ecosystem for new space applications, and the pace of adoption is accelerating,” says Mike Mills, senior VP & general manager HiRel at Infineon. “The RIC70115 reflects Infineon’s commitment to delivering the integration, performance and radiation hardness that space power designers need to move to GaN-based systems with confidence,” he adds. “We are giving designers a proven, qualified path to higher efficiency and greater design flexibility in one of the most demanding environments in the industry.”
The RIC70115 integrates an independent Miller clamp function that prevents parasitic-induced turn-on while maintaining the desired switching speed, reducing switching losses and improving overall efficiency. A truly differential input (TDI) logic stage delivers high noise immunity by rejecting common-mode noise and mitigating the effects of electromagnetic interference and radio frequency interference, which are both particularly relevant in the electrically demanding environment of a satellite power bus. An integrated low dropout regulator (LDO) generates a tightly regulated 4.8V drive voltage from a 5V or 12V source, reducing the need for external regulation components and supporting a power input range of 4.75V to 15V. Together, these integrated functions reduce external component count, simplify circuit design, and improve system reliability in high-cycle space power applications.
The RIC70115 meets the requirements of MIL-PRF-38535 across an extended operating temperature range of –55°C to 125°C. It is radiation hardened to a total ionizing dose (TID) rating of up to 100krad (Si) and has been characterized for single event effects (SEE) up to a linear energy transfer (LET) of 81.9MeVcm²/mg, providing the radiation performance margins required for low-earth orbit (LEO) and beyond.
The RIC70115 GaN HEMT driver is available now, along with the RIC70115EVAL1 evaluation board.
Infineon launches new rad-hard GaN transistors, including DLA JANS-certified device
