News: Microelectronics
29 May 2025
Infineon launches new rad-hard GaN transistors, including DLA JANS-certified device
Infineon Technologies AG of Munich, Germany has announced the first of a new family of radiation-hardened gallium nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the new product is the first in-house-manufactured GaN transistor to earn the highest quality certification of reliability assigned by the US Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The new rad-hard GaN high-electron-mobility transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. Combining the robust performance of GaN HEMTs with Infineon 50+ years of experience in high-reliability applications, the new power transistors are said to deliver best-in-class efficiency, thermal management and power density for smaller, lighter and more reliable space designs. The devices complement Infineon’s proven legacy radiation-hardened silicon MOSFET portfolio, providing access to a full catalog of power solutions for space applications.
“The Infineon team continues to push the limits of power design with our new GaN transistor line,” says Chris Opoczynski, senior VP & general manager HiRel, at Infineon. “This milestone brings the next generation of high-reliability power solutions for mission-critical defense and space applications that utilize the superior material properties of wide-bandgap semiconductors to customers serving the growing aerospace market.”
The first three product variations in the new rad-hard GaN transistor line are 100V, 52A devices featuring what is claimed to be an industry-leading (RDS(on) (drain–source on resistance) of 4mΩ (typical) and total gate charge (Qg) of 8.8nC (typical). Encased in robust hermetically sealed ceramic surface-mount packages, the transistors are single-event effect (SEE) hardened up to LET (GaN) = 70MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a total ionizing dose (TID) of 100krad and 500krad. The third device, screened to 500krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon claims to be the first company to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality and reliability required for space flight applications. Infineon is also running multiple lots prior to full JANS production release to ensure long-term manufacturing reliability.
Engineering samples and evaluation boards are available immediately, with the final JANS device being released in summer 2025. Additional JANS parts are launching soon, expanding available voltages and currents to enable greater flexibility in creating efficient and reliable designs.
