News: Microelectronics
29 January 2026
Vishay launches 1200V SiC MOSFET power modules in SOT-227 packages
Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has introduced five new 1200V MOSFET power modules designed to increase power efficiency for medium- to high-frequency applications in automotive, energy, industrial and telecom systems.
The Vishay Semiconductors VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120 and VS-SF200SA120 feature the firm’s latest-generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package.
Offered in single switch and low-side chopper configurations, each new power module features a SiC MOSFET integrated with a soft body diode offering low reverse recovery. The result is reduced switching losses and increased efficiency for solar inverters; off-board chargers for electric vehicles (EV); SMPS, DC/DC converters, UPS, and HVAC systems; large-scale battery storage systems; and telecom power supplies.
The compact SOT-227 package allows the devices to serve as drop-in replacements for competing solutions in existing designs, enabling the adoption of one of the newest SiC technologies without the expense of changing PCB layouts. The molded package also offers electrical insulation up to 2500V for 1 minute, lowering costs by eliminating the need for additional insulation between the component and heatsink.
The power modules provide continuous drain current from 50A to 200A and low on-resistance down to 12.1mW. The RoHS-compliant devices deliver high-speed switching with low capacitance and offer a high maximum operating junction temperature of +175 °C.
Samples and production quantities are available now, with lead times of 13 weeks.
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