News: Microelectronics
10 July 2025
Vishay launches Gen 3 650V and 1200V SiC Schottky diodes in SlimSMA HV package
Discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA has launched three new Gen 3 650V and 1200V silicon carbide (SiC) Schottky diodes in the compact, low-profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2mm, the 1A VS-3C01EJ12-M3 and the 2A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behavior to increase efficiency in high-speed, hard-switching power designs.
For high-voltage applications, the high creepage distance of the new Vishay Semiconductors devices provides improved electrical isolation, while their SlimSMA HV package features a molding compound with a high CTI (comparative tracking index) of >600 to ensure excellent electrical insulation. For space-constrained designs, the diodes offer a low profile of 0.95mm, compared with 2.3mm for competing SMA and SMB packages with a similar footprint.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3 and VS-3C02EJ12-M3 maintain a low capacitive charge down to 7.2nC irrespective of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high-frequency applications. In addition, the devices have virtually no recovery tail, which further improves efficiency, while their MPS structure delivers a reduced forward voltage drop down to 1.30V.
With a high operating temperature of +175°C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3 and VS-3C02EJ12-M3 include bootstrap, anti-parallel and PFC diodes for DC/DC and AC/DC converters in server power supplies; energy generaton and storage systems; industrial drives and tools; and x-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.
RoHS-compliant and halogen-free, the diodes feature a moisture sensitivity level (MSL) of 1 in accordance with J-STD-020 and meet the JESD 201 class 2 whisker test.
Samples and production quantities of the new SiC diodes are available now, with lead times of 14 weeks.
Vishay introduces 16 new Gen 3 1200V SiC Schottky diodes spanning 5–40A
