News: Microelectronics
17 April 2026
Infineon’s rad-hard devices used aboard NASA’s Artemis II Orion capsule
Infineon Technologies AG of Munich, Germany says that radiation-hardened (rad-hard) devices from its IR HiRel (high-reliability) division supported the electronic backbone — from critical power supply and control systems to data communications — were at the heart of the Orion capsule of NASA’s Artemis II mission, which recently returned from its 10-days around the Moon (reaching the furthest distance from Earth ever achieved by crewed spaceflight).
“Space programs require technologies and partners they can rely on for decades. Infineon is a critical technology partner,” says Mike Mills, senior VP & general manager of IR HiRel at Infineon. “The space industry is evolving rapidly: more missions, more data, more electrification — while facing increasing pressure on size, weight and power consumption. In this equation, semiconductors are becoming a central focus in space,” he adds. “The fact that our components performed flawlessly from the first to the last minute of the Artemis II mission is no coincidence. It is the result of decades of engineering expertise, state-of-the-art qualification processes and a deep understanding of what semiconductors must deliver in space.”
As far back as the 1970s, Infineon’s predecessor companies supplied the first rad-hard components for NASA and ESA space programs. Since then, Infineon IR HiRel has supported hundreds of space missions including navigation satellites, the International Space Station (ISS), and now the Artemis program. Its rad-hard components have traveled further than any other human-made object, over 20 billion kilometers from Earth. Infineon says that it continues to invest in, develop and manufacture rad-hard semiconductors supporting the space design community on a global scale.
The demands placed on semiconductors in space are immense. Beyond Earth’s protective magnetic field, high-energy particles strike electronic components unimpeded and can permanently damage or destroy them, causing mission failure. Infineon says that its rad-hard technology addresses these mechanisms not through passive shielding but through a semiconductor architecture that is radiation-resistant by design. All products are qualified to the most stringent international space standards, including MIL-PRF-38535 Class V, MIL-PRF-19500, ESA’s ESCC standards and NASA EEE-INST-002, ensuring their reliable performance.
Infineon says that its innovation is developed at the system level: semiconductor technology, rad-hard assurance, and packaging perform together. An optimized overall system influences not only electrical performance but also thermal behavior and long-term reliability — while simultaneously reducing weight and volume. As every gram counts in space, Infineon’s rad-hard parts provide a system-level advantage.
Wide-bandgap technology: GaN takes the next step
Infineon is also advancing the use of new semiconductor materials in space applications. Gallium nitride (GaN) enables lower switching losses, higher power density and higher switching frequencies – reducing power losses and magnetic component requirements, which translates directly into further weight savings. Based on internal manufacturing capabilities and the process and quality stability that comes with it, Infineon’s rad-hard 100V GaN transistor — qualified to JANS (Joint Army Navy Space) per MIL-PRF-19500 — brings GaN from concept to proven technology for demanding space missions. Infineon says that its JANS-qualified device is the first and only internally manufactured rad-hard GaN transistor on the market.
The firm offers a broad rad-hard portfolio spanning silicon power MOSFETs and GaN transistors, gate drivers and solid-state relays, in addition to rad-hard memories and radio frequency (RF) devices. Backed by in-house radiation testing capabilities and guaranteed long-term product availability, Infineon positions itself not merely as a component supplier but as a strategic technology partner for the entire space industry.
Infineon launches new rad-hard GaN transistors, including DLA JANS-certified device
