News: Microelectronics
25 September 2025
Infineon and ROHM collaborating on silicon carbide power electronics packages
Infineon Technologies AG of Munich, Germany and ROHM Co Ltd of Kyoto, Japan have signed a memorandum of understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, which should increase design and procurement flexibility for customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration should ensure seamless compatibility and interchangeability to match specific customer needs.
“Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization,” says Dr Peter Wawer, division president Green Industrial Power at Infineon.
“By working together, we can drive innovation, reduce complexity and increase customer satisfaction, ultimately shaping the future of the power electronics industry,” says Dr Kazuhide Ino, board member and managing executive officer in charge of Power Devices Business at ROHM.
Picture: Left: Dr Peter Wawer (division president Green Industrial Power at Infineon); right: Dr Kazuhide Ino (board member & managing executive officer, in charge of Power Devices Business at ROHM).
As part of the agreement, ROHM will adopt Infineon’s top-side-cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side-cooling platform offers several benefits, including a standardized height of 2.3mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.
At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared with standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables the reduction of thermal resistance by about 15% and inductance by 50% compared with the TO-247. The advantages bring 2.3 times higher power density than the TO-247.
Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This is expected to further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.
Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using Infineon’s and ROHM’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.
ROHM launches DOT-247 2-in-1 SiC molded module
Infineon Rohm SiC power modules
