News: Suppliers
23 September 2025
Aixtron ships its 100th G10-SiC system
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has shipped its 100th G10-SiC system, underscoring the market demand for its G10-SiC epitaxy batch technology over the last three years since its launch.
The delivery was made to a European power device and system maker, supporting the ramp-up of 200mm SiC epitaxy production capacity.
Aixtron says that this highlights the strong global adoption of its SiC Planetary Reactor technology, which enables the production of highly uniform, high-quality silicon carbide (SiC) material.
“It demonstrates the strong market trust in our technology and confirms our leading position in enabling the global ramp-up of SiC power electronics – a key driver of the ongoing electrification of our society,” says Dr Frank Wischmeyer, vice president Silicon Carbide at Aixtron.
The G10-SiC system features a unique multi-wafer 6x200mm batch configuration, combining the highest throughput with superior epitaxial film quality and yield, it is claimed. It is equipped with Multi-Ject technology, delivering highly uniform epitaxial layers across a wide voltage class range of SiC devices.
The system also supports volume manufacturing on 150mm wafers, allowing flexibility during the industry’s transition toward larger 200mm-diameter wafers.
Aixtron’s revenue grows 22% in Q2, driven by AI data-center communications
