AES Semigas

Honeywell

20 November 2025

GlobalFoundries and Navitas partner on US GaN technology and manufacturing

GlobalFoundries of Malta, NY (GF, the only US-based pure-play foundry with a global manufacturing footprint, including facilities in the USA, Europe and Singapore) and Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — have announced a long-term strategic partnership to strengthen and accelerate US-based GaN technology, design and manufacturing. Together, the firms will collaborate, develop and deliver solutions for critical applications in high-power markets that demand the highest efficiency and power density, including AI data centers, performance computing, energy and grid infrastructure and industrial electrification.

Navitas has achieved GaN deployment in high-volume markets such as mobile fast chargers, consumer, performance computing, electric vehicles, energy storage and industrial devices and is working to accelerate GaN adoption in high-power markets. GF has decades of experience as a global foundry partner, providing production at scale. Through this long-term partnership, GF and Navitas will manufacture GaN technology at GF’s facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-silicon technology and Navitas’ GaN technology and device expertise. Development is set for early 2026, with production expected to begin later in the year.

It is reckoned that, by combining GF’s manufacturing capabilities and Navitas’ GaN innovation, the strategic partnership will provide secure and scalable GaN solutions. Together, the firms will enable a US pathway for GaN, supporting national security and competitiveness while driving decarbonization across next-generation energy and compute platforms.

“GaN is transforming how the world moves power. And this partnership represents a significant step forward for US semiconductor leadership and the deployment of GaN technology to address essential applications,” says GlobalFoundries’ CEO Tim Breen. “By joining forces with Navitas, we are enabling a secure and sustainable supply chain for GaN technologies that power the future of AI, energy and industrial innovation,” he adds.

“GaN adoption is accelerating in high-power semiconductor markets such as AI data centers, performance computing, energy and grid infrastructures and industrial electrification, and our collaboration and partnership with GF ensures that Navitas can deliver the performance, efficiency and scale our customers demand and to manufacture those solutions in critical and national security applications in the United States,” says Navitas president & CEO Chris Allexandre. “Together, we are building a foundation for next-generation applications that are critical to national competitiveness and energy sustainability. Our partnership with GF is another milestone and step forward for Navitas 2.0”.

See related items:

Navitas announces private placement of common stock for proceeds of $100m

GigaDevice and Navitas unveil Digital Power Joint Lab to accelerate high-efficiency power management deployment

Navitas supporting 800VDC power architecture for NVIDIA’s next-gen AI factory computing platforms

US-based GlobalFoundries investing extra $3bn for R&D on silicon photonics, advanced packaging and GaN

Tags: GLOBALFOUNDRIES Power electronics

Visit: www.navitassemi.com

Visit: www.gf.com

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