News: Microelectronics
3 December 2025
onsemi and Innoscience sign MoU to collaborate on speeding global rollout of GaN power portfolio
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA and China-based Innoscience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 200mm silicon wafers — have signed a non-binding memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40–200V, and significantly broaden customer adoption.
The partnership includes wafer procurement and extended collaboration, bringing together onsemi’s expertise in integrated systems and packaging with Innoscience’s GaN technology and high-volume manufacturing to enable delivery of smaller and more cost-effective, highly efficient GaN products. onsemi expects to begin sampling in first-half 2026.
GaN devices offer higher switching speeds, smaller form factors and lower energy losses to deliver more power in less space. Until now, limited offerings and manufacturing capacity have slowed GaN adoption in the low- and medium-voltage segment, says onsemi. onsemi and Innoscience aim to overcome these barriers to quickly bring high-volume, worldwide deployment of optimized GaN solutions for mainstream markets, including:
- industrial: motor drives for robotics, solar microinverters, and optimizers;
- automotive: DC–DC converters, synchronous rectification;
- telecom infrastructure: DC–DC and point-of-load converters;
- consumer and mass market: power supplies, adaptors, DC–DC converters, motor drives, audio, light e-mobility, power tools, robotics;
- AI data center: intermediate bus converters, DC–DC converters, battery backup units.
For onsemi customers, the collaboration with Innoscience would enable:
- faster time to market: rapid prototyping, accelerated design-in, and swift entry into mainstream markets with onsemi's system expertise and Innoscience’s proven GaN technology and manufacturing;
- scalable manufacturing: true mass-market scalability to handle large-volume ramps, leveraging onsemi's global integration and packaging experience and Innoscience’s established GaN capacity;
- lower system cost: an optimized package, fewer components and simplified thermal management deliver more compact designs and lower total system cost.
“As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials,” notes Antoine Jalabert, onsemi’s VP of corporate strategy. “Until now, in the low- and medium-voltage segments, cost and supply constraints have limited its widespread adoption. Through a collaboration with Innoscience, we expect to be able to access the industry’s largest GaN production footprint and quickly scale our GaN offerings for customers worldwide to enable broader adoption in mainstream power applications” he adds.
“GaN technology is essential to improving electronics, creating smaller, more efficient power systems, saving electric power, and reducing CO2 emissions,” says Yi Sun, Innoscience’s senior VP, product & engineering. “Innoscience is excited to explore a strategic collaboration opportunity with onsemi, to expand and accelerate the adoption of GaN power worldwide, and to create a system integration platform with onsemi’s broad portfolio.”
Complete intelligent power portfolio
In its report ‘Power GaN 2025’, market analyst firm Yole projects that GaN power devices will rise at compound annual growth rate (CAGR) of 42% from 2024–2030, reaching $2.9bn (11% share of the global power semiconductor market). The collaboration with Innoscience would build on onsemi’s intelligent power portfolio, which now spans silicon, silicon carbide (SiC) and GaN technologies. onsemi sats that, together, these technologies enable it to deliver the optimal power system for application across AI data center, automotive, industrial and consumer. This complete low- and medium-voltage portfolio strengthens onsemi’s position as a provider of fully integrated power systems to help maximize performance and energy efficiency as global electrification and AI-energy demand continues to surge.
onsemi unveils vertical GaN power semiconductors, based on proprietary GaN-on-GaN technology
Innoscience launches new SolidGaN devices, boosting power efficiency by 50%
onsemi to establish wide-bandgap materials research center at Stony Brook University
